公开(公告)号：US20070164384A1

公开(公告)日：2007-07-19

申请号：US11466523

申请日：2006-08-23

Applicant: Yasushi Maruyama ,  Hideshi Abe ,  Hiroyuki Mori

Inventor： Yasushi Maruyama ,  Hideshi Abe ,  Hiroyuki Mori

IPC: H01L27/14

CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14689

Abstract: A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can be manufactured with a high yield ratio are provided. The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer, and in which light L is made to enter from the rear-surface side opposite to the front-surface side of the silicon layer and the thickness of the silicon layer 4 is 10 μm or less. Also, the method for manufacturing the solid-state imaging device at least includes the steps of: forming a semiconductor region of a photo sensor portion in a silicon layer of a layered substrate in which a silicon substrate, an intermediate layer and a silicon layer are laminated; bonding a first supporting substrate onto the silicon layer; removing the silicon substrate and the intermediate layer; forming thereafter a wiring portion above the silicon layer; bonding a second supporting substrate onto the wiring portion, and removing the first supporting substrate to make the silicon layer exposed.

Abstract translation: 具有高灵敏度的固态成像装置和获得小型化像素的结构，以及其中界面稳定的固态成像装置的制造方法，光谱特性优异并且可以用 提供高产率。 固态成像装置至少包括形成有光传感器部分的硅层和形成在硅层的表面侧的布线层，并且使光L从相对的背面侧进入 到硅层的表面侧，硅层4的厚度为10μm以下。 此外，制造固态成像装置的方法至少包括以下步骤：在硅衬底，中间层和硅层的层叠衬底的硅层中形成光电传感器部分的半导体区域 层压; 将第一支撑衬底接合到所述硅层上; 去除硅衬底和中间层; 然后形成硅层上方的布线部分; 将第二支撑基板接合到布线部分上，并且移除第一支撑基板以使硅层暴露。

公开(公告)号：US07217961B2

公开(公告)日：2007-05-15

申请号：US11340180

申请日：2006-01-26

Applicant: Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

Inventor： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

IPC: H01L31/0328

CPC classification number: H01L27/1463 ,  H01L27/14643

Abstract: A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

Abstract translation: 固态图像拾取装置包括电隔离阱区表面上的像素的元件隔离绝缘膜; 电隔离元件隔离绝缘膜下面的像素的第一隔离扩散层; 以及第二隔离扩散层，电隔离第一隔离扩散层下方的像素，其中电荷累积区域设置在由第一和第二隔离扩散层围绕的阱区域中，第一隔离扩散层的内周部分形成 投影区域，具有第一隔离扩散层的导电类型的杂质和具有电荷累积区域的导电类型的杂质在投影区域中混合，并且电荷累积区域和第二隔离区域之间的电荷累积区域的一部分 隔离扩散层与突出区域下方的第二隔离扩散层抵接或靠近。

公开(公告)号：US20070069238A1

公开(公告)日：2007-03-29

申请号：US11604490

申请日：2006-11-27

Applicant: Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

Inventor： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

IPC: H01L31/00

CPC classification number: H01L27/1463 ,  H01L27/14643

Abstract: A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

公开(公告)号：US20060281215A1

公开(公告)日：2006-12-14

申请号：US11466527

申请日：2006-08-23

Applicant: Yasushi Maruyama ,  Hideshi Abe ,  Hiroyuki Mori

Inventor： Yasushi Maruyama ,  Hideshi Abe ,  Hiroyuki Mori

IPC: H01L21/00

CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14689

Abstract: A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can be manufactured with a high yield ratio are provided. The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer, and in which light L is made to enter from the rear-surface side opposite to the front-surface side of the silicon layer and the thickness of the silicon layer 4 is 10 μm or less. Also, the method for manufacturing the solid-state imaging device at least includes the steps of: forming a semiconductor region of a photo sensor portion in a silicon layer of a layered substrate in which a silicon substrate, an intermediate layer and a silicon layer are laminated; bonding a first supporting substrate onto the silicon layer; removing the silicon substrate and the intermediate layer; forming thereafter a wiring portion above the silicon layer; bonding a second supporting substrate onto the wiring portion, and removing the first supporting substrate to make the silicon layer exposed.

公开(公告)号：US20060261369A1

公开(公告)日：2006-11-23

申请号：US11491901

申请日：2006-07-25

Applicant: Yasushi Maruyama ,  Hideshi Abe

Inventor： Yasushi Maruyama ,  Hideshi Abe

IPC: H01L31/00

CPC classification number: H01L27/14623 ,  H01L27/14603 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14683 ,  H01L27/14806 ,  H01L31/02164 ,  H01L31/022408 ,  Y10S257/929

Abstract: There is a demand of a solid-state imaging device capable of being driven at a high speed and in which the shading of sensitivity and illuminance defect can be prevented from being caused. A solid-state imaging device (20) comprises a light-receiving sensor section disposed on the surface layer portion of a substrate (21) for performing a photoelectric conversion, a charge transfer section for transferring a signal charge read out from the light-receiving sensor section, a transfer electrode (27) (28) made of polysilicon formed on a substrate (21) at its position approximately above the charge transfer section through an insulating film (26), and an interconnection made of polysilicon and interconnected to the transfer electrode (27) (28). At least one of the polysilicon transfer electrode (27)(28) and the interconnection is formed on a polysilicon layer (27a) (28a) by selectively depositing a high-melting point metal having a resistance value lower than that of polysilicon. Also, there is provided a solid-state imaging device in which a fluctuation of a work function of the transfer electrode can be avoided and a manufacturing method thereof. The solid-state imaging device (10) comprises a buffer layer (1) containing a metal silicide layer (16) is formed between he transfer electrodes (3), (4) and a shunt interconnection layer (7) formed of a metal layer.

Abstract translation: 需要能够高速驱动并且可以防止引起灵敏度和照度缺陷的阴影的固态成像装置。 固态成像装置（20）包括设置在用于进行光电转换的基板（21）的表层部分上的光接收传感器部分，用于传送从光接收读出的信号电荷的电荷转移部分 传感器部分，通过绝缘膜（26）在其位于大致高于电荷转移部分的位置处形成在基板（21）上的由多晶硅制成的转移电极（27）（28），以及由多晶硅制成并且互连到转移 电极（27）（28）。 通过选择性地沉积具有比多晶硅低的电阻值的高熔点金属，在多晶硅层（27a）（28a）上形成多晶硅转移电极（27）（28）和互连中的至少一个。 另外，提供了可以避免转移电极的功函数波动的固态成像装置及其制造方法。 固态成像装置（10）包括在传输电极（3），（4）和由金属层形成的分流互连层（7）之间形成有包含金属硅化物层（16）的缓冲层（1） 。

公开(公告)号：US07087939B2

公开(公告)日：2006-08-08

申请号：US11074041

申请日：2005-03-08

Applicant: Yasushi Maruyama ,  Hideshi Abe

Inventor： Yasushi Maruyama ,  Hideshi Abe

IPC: H01L31/0328

CPC classification number: H01L27/14623 ,  H01L27/14603 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14683 ,  H01L27/14806 ,  H01L31/02164 ,  H01L31/022408 ,  Y10S257/929

Abstract: There is a demand of a solid-state imaging device capable of being driven at a high speed and in which the shading of sensitivity and illuminance defect can be prevented from being caused. A solid-state imaging device (20) includes a light-receiving sensor section disposed on the surface layer portion of a substrate (21) that performs a photoelectric conversion, a charge transfer section that transfers a signal charge read out from the light-receiving sensor section, a transfer electrode (27) (28) made of polysilicon formed on a substrate (21) at a position approximately above the charge transfer section through an insulating film (26), and an interconnection made of polysilicon and interconnected to the transfer electrode (27) (28). At least one of the polysilicon transfer electrode (27)(28) and the interconnection is formed on a polysilicon layer (27a) (28a) by selectively depositing a high-melting point metal having a resistance value lower than that of polysilicon. Also, there is provided a solid-state imaging device in which a fluctuation of a work function of the transfer electrode can be avoided and a manufacturing method thereof. The solid-state imaging device (10) comprises a buffer layer (1) containing a metal silicide layer (16) is formed between the transfer electrodes (3), (4) and a shunt interconnection layer (7) formed of a metal layer.

Abstract translation: 需要能够高速驱动并且可以防止引起灵敏度和照度缺陷的阴影的固态成像装置。 固态成像装置（20）包括设置在执行光电转换的基板（21）的表层部分上的光接收传感器部分，电荷转移部分，其将从光接收读出的信号电荷 传感器部分，通过绝缘膜（26）在大致高于电荷转移部分的位置处形成在基板（21）上的由多晶硅制成的转移电极（27）（28），以及由多晶硅制成的互连到互连 电极（27）（28）。 通过选择性地沉积具有比多晶硅低的电阻值的高熔点金属，在多晶硅层（27a）（28a）上形成多晶硅转移电极（27）（28）和互连中的至少一个。 另外，提供了可以避免转移电极的功函数波动的固态成像装置及其制造方法。 固态成像装置（10）包括在转移电极（3），（4）和由金属层形成的分流互连层（7）之间形成有包含金属硅化物层（16）的缓冲层（1） 。

公开(公告)号：US20050139828A1

公开(公告)日：2005-06-30

申请号：US10978754

申请日：2004-11-01

Applicant: Yasushi Maruyama ,  Hideshi Abe ,  Hiroyuki Mori

Inventor： Yasushi Maruyama ,  Hideshi Abe ,  Hiroyuki Mori

IPC: H01L27/14 ,  H01L21/00 ,  H01L23/00 ,  H01L27/146 ,  H01L29/74 ,  H01L31/00

CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14689

Abstract: A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can be manufactured with a high yield ratio are provided. The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer, and in which light L is made to enter from the rear-surface side opposite to the front-surface side of the silicon layer and the thickness of the silicon layer 4 is 10 μm or less. Also, the method for manufacturing the solid-state imaging device at least includes the steps of: forming a semiconductor region of a photo sensor portion in a silicon layer of a layered substrate in which a silicon substrate, an intermediate layer and a silicon layer are laminated; bonding a first supporting substrate onto the silicon layer; removing the silicon substrate and the intermediate layer; forming thereafter a wiring portion above the silicon layer; bonding a second supporting substrate onto the wiring portion, and removing the first supporting substrate to make the silicon layer exposed.

Abstract translation: 具有高灵敏度的固态成像装置和获得小型化像素的结构，以及其中界面稳定的固态成像装置的制造方法，光谱特性优异并且可以用 提供高产率。 固态成像装置至少包括形成有光传感器部分的硅层和形成在硅层的表面侧的布线层，并且使光L从相对的背面侧进入 到硅层的表面侧，硅层4的厚度为10μm以下。 此外，制造固态成像装置的方法至少包括以下步骤：在硅衬底，中间层和硅层的层叠衬底的硅层中形成光电传感器部分的半导体区域 层压; 将第一支撑衬底接合到所述硅层上; 去除硅衬底和中间层; 然后形成硅层上方的布线部分; 将第二支撑基板接合到布线部分上，并且移除第一支撑基板以使硅层暴露。

公开(公告)号：US06774444B2

公开(公告)日：2004-08-10

申请号：US10348820

申请日：2003-01-22

Applicant: Hideshi Abe

Inventor： Hideshi Abe

IPC: H01L2714

CPC classification number: H01L27/14687 ,  H01L27/1463 ,  H01L27/14656

Abstract: A method for making a solid-state imaging device that can form a first P-type well region deep in a substrate without being affected by the heat applied during an epitaxial growth process is disclosed. The method includes a first step of preparing a substrate composite comprising an first substrate and a second substrate on the first substrate, a second step of implanting impurity ions from the surface of the second substrate at an energy exceeding 3 MeV so as to form a barrier layer, and a third step of forming a photosensor in the second substrate.

Abstract translation: 公开了一种制造固态成像装置的方法，该固态成像装置可以在不受外延生长过程中施加的热的影响的情况下在基板深处形成第一P型阱区域。 该方法包括在第一衬底上制备包括第一衬底和第二衬底的衬底复合材料的第一步骤，以超过3MeV的能量从第二衬底的表面注入杂质离子以形成屏障的第二步骤 层，以及在第二基板中形成光传感器的第三步骤。

公开(公告)号：US06436729B1

公开(公告)日：2002-08-20

申请号：US09624148

申请日：2000-07-21

Applicant: Hideshi Abe

Inventor： Hideshi Abe

IPC: H01L2100

CPC classification number: H01L27/14689 ,  H01L27/14656

Abstract: A process for producing a solid image pickup device is demanded that can enhance a photoelectric conversion region by forming an overflow barrier layer at a deep position and can prevents generation of radiation due to the use of resist as a mask. Upon producing a solid image pickup device having a vertical overflow drain structure, ion implantation is conducted on an entire of a silicon substrate without using a resist mask, so as to form an overflow barrier layer. It is also possible that a trench is formed in a peripheral part of the silicon substrate to surround a pixel region and to separate the overflow barrier layer into the pixel region and an outer peripheral part, and an impurity diffusion layer having a conductive type different from that of the overflow barrier layer is formed on an inner surface of the trench.

Abstract translation: 需要制造固体摄像装置的方法，其可以通过在深位置形成溢流阻挡层来增强光电转换区域，并且可以防止由于使用抗蚀剂作为掩模而产生辐射。 在制造具有垂直溢流漏极结构的固体图像拾取装置时，在不使用抗蚀剂掩模的情况下，在整个硅衬底上进行离子注入，以便形成溢出阻挡层。 也可以在硅衬底的周边部分中形成沟槽以包围像素区域并将溢出阻挡层分离成像素区域和外周部分，以及具有导电类型不同的杂质扩散层 溢流阻挡层的形成在沟槽的内表面上。

公开(公告)号：US06252219B1

公开(公告)日：2001-06-26

申请号：US09289546

申请日：1999-04-12

Applicant: Hideshi Abe

Inventor： Hideshi Abe

IPC: H01L2714

CPC classification number: H01L27/14627

Abstract: A solid-state imaging element is able to maximize a sensitivity relative to various kinds of light sources having different incident angles. In a solid-state imaging element (20), a maximum inclination angle (max of a curved surface (SL) of an interlayer lens (11) relative to a surface (SS) parallel to a surface of a substrate (2) is set to an angle near a critical angle (&thgr;c) of a total reflection.

Abstract translation: 固态成像元件能够相对于具有不同入射角的各种光源的灵敏度最大化。 在固体摄像元件（20）中，设置层叠透镜（11）相对于与基板（2）的表面平行的面（SS）的曲面（SL）的最大倾角（max） 到达全反射的临界角（thetac）附近的角度。