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    Solid-state imager, method of manufacturing the same, and camera
    1.
    发明授权
    Solid-state imager, method of manufacturing the same, and camera 有权
    固态成像仪，制造方法和相机

    公开(公告)号：US08384817B2

    公开(公告)日：2013-02-26

    申请号：US12619292

    申请日：2009-11-16

    Applicant: Hideshi Abe

    Inventor： Hideshi Abe

    IPC: H04N5/225 ,  G02B13/16

    CPC classification number: H04N5/335 ,  G01J1/02 ,  G01J1/0209 ,  G01J1/0214 ,  G01J1/04 ,  G01J1/0422 ,  G01J1/06 ,  G01J1/4228 ,  H01L27/14605 ,  H01L27/14609 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14641 ,  H01L27/14685

    Abstract: A solid-state imager includes a photoelectric conversion region for photoelectrically converting a light beam received on a light receiving surface thereof into a signal charge and a waveguide path for guiding the light beam to the light receiving surface. The waveguide path includes a plurality of waveguide members, each waveguide member guiding a light beam incident on a light incident surface thereof to a light output surface thereof. The plurality of waveguide members are laminated on the light receiving surface. A first waveguide member closest to the light receiving surface from among the plurality of waveguide members faces the light receiving surface and is smaller in area than a light incident surface of a second waveguide member farthest from the light receiving surface from among the plurality of waveguide members.

    Abstract translation: 固态成像器包括光电转换区域，用于将其光接收表面上接收的光束光电转换为信号电荷，以及用于将光束引导到光接收表面的波导路径。 波导路径包括多个波导构件，每个波导构件将入射到其光入射表面上的光束引导到其光输出表面。 多个波导构件层压在光接收表面上。 从多个波导构件中最靠近受光面的第一波导构件面对光接收面，并且与多个波导构件中离光接收面最远的第二波导构件的光入射面相比面积小 。

    Solid-state image pickup device and method for producing the same
    3.
    发明授权
    Solid-state image pickup device and method for producing the same 有权
    固体摄像装置及其制造方法

    公开(公告)号：US07943962B2

    公开(公告)日：2011-05-17

    申请号：US12629755

    申请日：2009-12-02

    Applicant: Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

    Inventor： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

    IPC: H01L31/0328

    CPC classification number: H01L27/1463 ,  H01L27/14643

    Abstract: A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

    Abstract translation: 固态图像拾取装置包括电隔离阱区表面上的像素的元件隔离绝缘膜; 电隔离元件隔离绝缘膜下面的像素的第一隔离扩散层; 以及第二隔离扩散层，电隔离第一隔离扩散层下方的像素，其中电荷累积区域设置在由第一和第二隔离扩散层围绕的阱区域中，第一隔离扩散层的内周部分形成 投影区域，具有第一隔离扩散层的导电类型的杂质和具有电荷累积区域的导电类型的杂质在投影区域中混合，并且电荷累积区域和第二隔离区域之间的电荷累积区域的一部分 隔离扩散层与突出区域下方的第二隔离扩散层抵接或靠近。

    CMOS solid-state imaging device and method of manufacturing the same as well as drive method of CMOS solid-state imaging device
    4.
    发明授权
    CMOS solid-state imaging device and method of manufacturing the same as well as drive method of CMOS solid-state imaging device 有权
    CMOS固态成像器件及其制造方法以及CMOS固态成像器件的驱动方法

    公开(公告)号：US07879637B2

    公开(公告)日：2011-02-01

    申请号：US12334015

    申请日：2008-12-12

    Applicant: Hideshi Abe ,  Keiji Tatani ,  Kazuichiro Itonaga

    Inventor： Hideshi Abe ,  Keiji Tatani ,  Kazuichiro Itonaga

    IPC: H01L21/00 ,  H01L21/77

    CPC classification number: H01L27/14643 ,  H01L27/1463 ,  H01L27/14687 ,  H01L27/14689

    Abstract: A CMOS solid-state imaging device configured to restrain the occurrence of white spots and dark current caused by pixel defects, and also to increase the saturation signal amount. Adjacent pixels are separated by an element isolation portion formed of a diffusion layer and an insulating layer thereon, and the insulating layer of the element isolation portion is formed in a position equal to or shallower than the position of a pn junction on the side of an accumulation layer of a photoelectric conversion portion 38 constituting a pixel.

    Abstract translation: CMOS固态成像装置，其被配置为抑制由像素缺陷引起的白斑和暗电流的发生，并且还增加饱和信号量。 相邻的像素由在其上的扩散层和绝缘层形成的元件隔离部分分离，并且元件隔离部分的绝缘层形成在与pn结侧面上的pn结的位置相等或更浅的位置 构成像素的光电转换部分38的累积层。

    Solid-state imaging device
    5.
    发明授权
    Solid-state imaging device 有权
    固态成像装置

    公开(公告)号：US07791118B2

    公开(公告)日：2010-09-07

    申请号：US12277982

    申请日：2008-11-25

    Applicant: Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

    Inventor： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

    IPC: H01L31/113

    CPC classification number: H01L27/14601 ,  H01L27/14689 ,  H01L27/14806 ,  H04N5/335

    Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

    Abstract translation: 具有这样一种结构的固态成像装置，该结构使得用于读取信号电荷的电极设置在构成像素的光接收传感器部分的一侧; 将预定的电压信号V施加到形成为覆盖除了光接收传感器部分之外的图像拾取区域的遮光膜; 第二导电型半导体区域形成在构成光接收传感器部分的光电转换区域的第一导电型半导体区域的表面上的中心; 并且在第一导电型半导体区域的电极侧的端部的表面上形成比第二导电型半导体区域的杂质浓度低的区域， 像素分离区域。

    Solid-state imaging device and method for manufacturing the same
    6.
    发明授权
    Solid-state imaging device and method for manufacturing the same 有权
    固态成像装置及其制造方法

    公开(公告)号：US07646047B2

    公开(公告)日：2010-01-12

    申请号：US10978754

    申请日：2004-11-01

    Applicant: Yasushi Maruyama ,  Hideshi Abe ,  Hiroyuki Mori

    Inventor： Yasushi Maruyama ,  Hideshi Abe ,  Hiroyuki Mori

    IPC: H01L31/062

    CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14689

    Abstract: The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer. Light enters from the rear-surface side opposite to the front-surface side of the silicon layer and the thickness of the silicon layer 4 is 10 μm or less. The photo sensor portion includes sensors configured to convert the light into signals representing an image. Each of the sensors includes a relatively highly doped first conductivity type region adjacent the front surface side of the silicon layer and serving as a charge storage region, a first relatively lightly doped second conductivity type region extending from the charge storage region toward the rear surface side of the silicon layer and serving as a photo sensitive region, a second relatively highly doped second conductivity type region extending from the front surface side of the silicon layer toward the rear surface side of the silicon layer and serving as a floating diffusion region, and a relatively lightly doped region of the first conductivity type between the floating diffusion region and the charge storage region and under one of the at least one read out gate electrode and serving as a charge read out region.

    Abstract translation: 固态成像装置至少包括形成有光传感器部分的硅层和形成在硅层前表面侧的布线层。 光从与硅层的前表面侧相反的背面侧入射，硅层4的厚度为10μm以下。 光传感器部分包括被配置为将光转换成表示图像的信号的传感器。 每个传感器包括与硅层的前表面侧相邻并且用作电荷存储区域的相对高掺杂的第一导电类型区域，从电荷存储区域朝向后表面侧延伸的第一相对轻掺杂的第二导电类型区域 的硅层，作为光敏区域，从硅层的表面侧朝向硅层的背面侧延伸并作为浮动扩散区域的第二相对高掺杂的第二导电类型区域，以及 在浮动扩散区域和电荷存储区域之间以及至少一个读出栅极电极之一处并且用作电荷读出区域的第一导电类型的相对轻掺杂区域。

    Solid-state image pickup device and manufacturing method for the same
    7.
    发明授权
    Solid-state image pickup device and manufacturing method for the same 有权
    固态摄像装置及其制造方法

    公开(公告)号：US07595214B2

    公开(公告)日：2009-09-29

    申请号：US11903873

    申请日：2007-09-25

    Applicant: Yoshiaki Kitano ,  Nobuhiro Karasawa ,  Jun Kuroiwa ,  Hideshi Abe ,  Mitsuru Sato ,  Hiroaki Ohki

    Inventor： Yoshiaki Kitano ,  Nobuhiro Karasawa ,  Jun Kuroiwa ,  Hideshi Abe ,  Mitsuru Sato ,  Hiroaki Ohki

    IPC: H01L21/00

    CPC classification number: H01L27/14843 ,  H01L27/14623 ,  H01L27/14689 ,  H01L27/14837

    Abstract: A solid-state image pickup device includes, in a substrate, a plurality of photoelectric conversion regions for subjecting incoming light to photoelectric conversion, a reading gate for reading a signal charge from the photoelectric conversion regions, and a transfer register (vertical register) for transferring the signal charge read by the reading gate. Therein, a groove is formed on the surface side of the substrate, and the transfer register and the reading gate are formed at the bottom part of the groove. With such a structure, in the solid-state image pickup device, reduction can be achieved for the smear characteristics, a reading voltage, noise, and others.

    Abstract translation: 一种固体摄像装置，在基板中包括多个用于使入射光进行光电转换的光电转换区域，用于从光电转换区域读取信号电荷的读取门和用于 传输读取门读取的信号电荷。 其中，在基板的表面侧形成有凹槽，并且在凹槽的底部形成有传送寄存器和读取门。 利用这种结构，在固态图像拾取装置中，可以实现对于拖尾特性，读取电压，噪声等的减小。

    CMOS SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME AS WELL AS DRIVE METHOD OF CMOS SOLID-STATE IMAGING DEVICE
    8.
    发明申请
    CMOS SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME AS WELL AS DRIVE METHOD OF CMOS SOLID-STATE IMAGING DEVICE 有权
    CMOS固态成像装置及其制造方法以及CMOS固态成像装置的驱动方法

    公开(公告)号：US20090098679A1

    公开(公告)日：2009-04-16

    申请号：US12334015

    申请日：2008-12-12

    Applicant: Hideshi Abe ,  Keiji Tatani ,  Kazuichiro Itonaga

    Inventor： Hideshi Abe ,  Keiji Tatani ,  Kazuichiro Itonaga

    IPC: H01L21/77

    CPC classification number: H01L27/14643 ,  H01L27/1463 ,  H01L27/14687 ,  H01L27/14689

    Abstract: A CMOS solid-state imaging device configured to restrain the occurrence of white spots and dark current caused by pixel defects, and also to increase the saturation signal amount.Adjacent pixels are separated by an element isolation portion formed of a diffusion layer and an insulating layer thereon, and the insulating layer of the element isolation portion is formed in a position equal to or shallower than the position of a pn junction on the side of an accumulation layer of a photoelectric conversion portion 38 constituting a pixel.

    Abstract translation: CMOS固态成像装置，其被配置为抑制由像素缺陷引起的白斑和暗电流的发生，并且还增加饱和信号量。 相邻的像素由在其上的扩散层和绝缘层形成的元件隔离部分分离，并且元件隔离部分的绝缘层形成在与pn结侧面上的pn结的位置相等或更浅的位置 构成像素的光电转换部分38的累积层。

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