摘要:
As for a semiconductor device which is typified by a display device, it is an object to provide a highly reliable semiconductor device to which a large-sized or high-definition screen is applicable and which has high display quality and operates stably. By using a conductive layer including Cu as a long lead wiring, an increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
摘要:
A light emitting device having a structure in which oxygen and moisture are prevented from reaching light emitting elements, and a method of manufacturing the same, are provided. Further, the light emitting elements are sealed by using a small number of process steps, without enclosing a drying agent. The present invention has a top surface emission structure. A substrate on which the light emitting elements are formed is bonded to a transparent sealing substrate. The structure is one in which a transparent second sealing material covers the entire surface of a pixel region when bonding the two substrates, and a first sealing material (having a higher viscosity than the second sealing material), which contains a gap material (filler, fine particles, or the like) for protecting a gap between the two substrates, surrounds the pixel region. The two substrates are seated by the first sealing material and the second sealing material. Further, reaction between electrodes of the light emitting elements (cathodes or anodes) and the sealing materials can be prevented by covering the electrodes with a transparent protective layer, for example, CaF2, MgF2, or BaF2.
摘要:
By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
摘要:
It is an object of the present invention to provide a method for fabricating a light emitting device, in which brightness gradient due to potential drop of a counter electrode can be prevented from being observed and an auxiliary electrode can be formed without increasing the number of steps, even when the precision of a light emitting device is improved. It is another object of the invention to provide a light emitting device fabricated according to the method. The light emitting device has a light emitting element and an auxiliary electrode in each pixel. The light emitting element includes a first electrode, a second electrode, an electroluminescent layer provided between the first and the second electrodes. Further, the first electrode is overlapped with the electroluminescent layer and the second electrode formed over an insulating film by means of a first opening formed in the insulating film. Still further, the auxiliary electrode is overlapped with the second electrode by means of a second opening formed over the second insulating film.
摘要:
A silicon production reactor including a reaction vessel and heating element, the reaction vessel has a vertically extending wall and a space surrounded by the wall, the heating element being capable of heating at least a part, including lower end portion, of the wall's surface facing the space to a temperature of not lower than the melting point of silicon, the silicon production reactor being adapted to flow raw gas for silicon deposition from an upper part of the space of the reaction vessel toward a lower part thereof, characterized in that the space of the reaction vessel is of slit form in cross-sectional view. This silicon production reactor is capable of attaining improvement with respect to problems encountered at apparatus scale-up, such as decrease of reactivity of raw gas and generation of by-products, thereby accomplishing a striking enhancement of production efficiency.
摘要:
When a light-emitting element having an intermediate conductive layer between a plurality of light-emitting layers is formed, the intermediate conductive layer can have transparency; and thus, materials are largely limited and the manufacturing process of an element becomes complicated by a conventional method. A light-emitting element according to the present invention is formed by sequentially stacking a pixel electrode, a first light-emitting layer, an intermediate conductive layer (including an electron injecting layer and a hole-injecting layer, one of which is island-like), a second light-emitting layer and an opposite electrode. Therefore, the present invention can provide a light-emitting element typified by an organic EL element in which arange of choice of materials that can be used as the intermediate conductive layer is broadened extremely, and which can realize a high light-emitting efficiency, a low power consumption and a high reliability, and further a display device using the light-emitting element.
摘要:
It is an object of the present invention to provide a method for fabricating a light emitting device, in which brightness gradient due to potential drop of a counter electrode can be prevented from being observed and an auxiliary electrode can be formed without increasing the number of steps, even when the precision of a light emitting device is improved. It is another object of the invention to provide a light emitting device fabricated according to the method. The light emitting device has a light emitting element and an auxiliary electrode in each pixel. The light emitting element includes a first electrode, a second electrode, an electroluminescent layer provided between the first and the second electrodes. Further, the first electrode is overlapped with the electroluminescent layer and the second electrode formed over an insulating film by means of a first opening formed in the insulating film. Still further, the auxiliary electrode is overlapped with the second electrode by means of a second opening formed over the second insulating film.
摘要:
In the present invention, an electron injection composition for a light-emitting element, comprising a pyridine derivative represented by general formula 1 and at least one of an alkali metal, an alkali earth metal, and a transition metal, is used to form an electron injection layer in a portion of a layer including luminescent material in a light-emitting element, and it is also an object of the present invention to provide, by using the composition, a light-emitting element that has more superior characteristics and a longer lifetime as compared to conventional ones. (where each of R1 to R8 represents hydrogen, halogen, a cyano group, an alkyl group having 1 to 10 carbon atoms, a haloalkyl group having 1 to 10 carbon atoms, an alkoxyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, or a substituted or unsbstituted heterocyclic group.)
摘要:
A sealing structure is provided without irradiating a pixel portion of a light emitting element by heat or UV light. By the sealing structure, the reliability is enhanced by blocking out oxygen and moisture, and preventing the deterioration of the light emitting element. The sealing structure in which a whole surface of the pixel portion is covered with a sealing material and which has an excellent sealing property is manufactured without being exposed to heat or UV light. In this case, a catalyst for curing a sealing material is formed as a film on a substrate, and a sealing material for covering a pixel portion is applied to the other substrate. Then, the both substrates are bonded together.
摘要:
A measure for improving the light emission efficiency of a light emitting element without degrading characteristics of anode materials used in prior art is provided in manufacture of an upward emission type light emitting element. The present invention is characterized in that nitride or carbide of a metal element belonging to one of Group 4, 5, and 6 in the periodic table (hereinafter referred to as metal compound) is used as the material for forming an anode of a light emitting element. The metal compound has a work function equal to or larger than the work function of conventional anode materials. Therefore, injection of holes from the anode can be improved ever more. Also, with regard to conductivity, the metal compound is smaller in resistivity than ITO. It therefore can fulfil the function as a wire and can lower the drive voltage in the light emitting element compared to prior art.