公开(公告)号：US20100142088A1

公开(公告)日：2010-06-10

申请号：US12588176

申请日：2009-10-06

申请人： Hitoshi Iwasaki ,  Soichi Oikawa ,  Katsuhiko Koui ,  Kenichiro Yamada

发明人： Hitoshi Iwasaki ,  Soichi Oikawa ,  Katsuhiko Koui ,  Kenichiro Yamada

IPC分类号： G11B5/127

CPC分类号： G11B5/3146 ,  G11B5/314 ,  G11B2005/0005 ,  G11B2005/0024 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/08 ,  H03B15/006

摘要： A spin torque oscillator includes an amorphous soft magnetic layer, a nonmagnetic layer and a hard magnetic layer. The nonmagnetic layer with a close-packed crystal structure is provided on the amorphous soft magnetic layer. The hard magnetic layer with a close-packed crystal structure and perpendicular magnetic anisotropy is provided on the nonmagnetic layer.

摘要翻译： 自旋转矩振荡器包括非晶软磁层，非磁性层和硬磁层。 在非晶软磁层上提供具有紧密结晶结构的非磁性层。 在非磁性层上提供具有紧密堆积晶体结构和垂直磁各向异性的硬磁性层。

公开(公告)号：US08467148B2

公开(公告)日：2013-06-18

申请号：US12588176

申请日：2009-10-06

申请人： Hitoshi Iwasaki ,  Soichi Oikawa ,  Katsuhiko Koui ,  Kenichiro Yamada

发明人： Hitoshi Iwasaki ,  Soichi Oikawa ,  Katsuhiko Koui ,  Kenichiro Yamada

IPC分类号： G11B5/127

CPC分类号： G11B5/3146 ,  G11B5/314 ,  G11B2005/0005 ,  G11B2005/0024 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/08 ,  H03B15/006

摘要： A spin torque oscillator includes an amorphous soft magnetic layer, a nonmagnetic layer and a hard magnetic layer. The nonmagnetic layer with a close-packed crystal structure is provided on the amorphous soft magnetic layer. The hard magnetic layer with a close-packed crystal structure and perpendicular magnetic anisotropy is provided on the nonmagnetic layer.

摘要翻译： 自旋转矩振荡器包括非晶软磁层，非磁性层和硬磁层。 在非晶软磁层上提供具有紧密结晶结构的非磁性层。 在非磁性层上提供具有紧密堆积晶体结构和垂直磁各向异性的硬磁性层。

公开(公告)号：US08488373B2

公开(公告)日：2013-07-16

申请号：US13200844

申请日：2011-10-03

申请人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou ,  Soichi Oikawa ,  Hitoshi Iwasaki ,  Kenichiro Yamada ,  Katsuhiko Koui

发明人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou ,  Soichi Oikawa ,  Hitoshi Iwasaki ,  Kenichiro Yamada ,  Katsuhiko Koui

IPC分类号： G11C11/00

CPC分类号： H03B15/006 ,  C23C14/025 ,  C23C14/165 ,  G11C5/005 ,  G11C11/161 ,  Y10T428/1114

摘要： A spin transfer (torque) oscillator (STO) with a non-magnetic spacer formed between a spin injection layer (SIL) and a field generation layer (FGL), and with an interfacial layer comprised of Fe(100-V)CoV where v is from 5 to 100 atomic % formed between the SIL and non-magnetic spacer is disclosed. A composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture is used to enhance perpendicular magnetic anisotropy (PMA) in the STO device. The interfacial layer quenches SIL oscillations and thereby stabilizes the SIL against FGL oscillations. The interfacial layer preferably has a thickness from 5 to 50 Angstroms and enhances amplitude (dR/R) in the STO device. The STO device may have a top SIL or bottom SIL configuration. The SIL is typically a laminated structure such as (Co/Ni)X where x is between 5 and 50.

公开(公告)号：US20130082787A1

公开(公告)日：2013-04-04

申请号：US13200844

申请日：2011-10-03

申请人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou ,  Soichi Oikawa ,  Hitoshi Iwasaki ,  Kenichiro Yamada ,  Katsuhiko Koui

发明人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou ,  Soichi Oikawa ,  Hitoshi Iwasaki ,  Kenichiro Yamada ,  Katsuhiko Koui

IPC分类号： H03B7/00 ,  C23C14/14 ,  C23C14/35 ,  B05D5/00 ,  B05D3/02

CPC分类号： H03B15/006 ,  C23C14/025 ,  C23C14/165 ,  G11C5/005 ,  G11C11/161 ,  Y10T428/1114

摘要： A spin transfer (torque) oscillator (STO) with a non-magnetic spacer formed between a spin injection layer (SIL) and a field generation layer (FGL), and with an interfacial layer comprised of Fe(100-V)CoV where v is from 5 to 100 atomic % formed between the SIL and non-magnetic spacer is disclosed. A composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture is used to enhance perpendicular magnetic anisotropy (PMA) in the STO device. The interfacial layer quenches SIL oscillations and thereby stabilizes the SIL against FGL oscillations. The interfacial layer preferably has a thickness from 5 to 50 Angstroms and enhances amplitude (dR/R) in the STO device. The STO device may have a top SIL or bottom SIL configuration. The SIL is typically a laminated structure such as (Co/Ni)X where x is between 5 and 50.

摘要翻译： 具有在自旋注入层（SIL）和场产生层（FGL）之间形成的非磁性间隔物的自旋转移（扭矩）振荡器（STO），以及由Fe（100-V）CoV组成的界面层，其中v 公开了在SIL和非磁性间隔物之间​​形成的5至100原子％。 使用由Ta制成的复合晶种层和具有fcc（111）或hcp（001）结构的金属层来增强STO器件中的垂直磁各向异性（PMA）。 界面层淬灭SIL振荡，从而使SIL稳定于FGL振荡。 界面层优选具有5至50埃的厚度，并且增强STO器件中的振幅（dR / R）。 STO设备可能具有顶部SIL或底部SIL配置。 SIL通常是诸如（Co / Ni）X的层压结构，其中x在5和50之间。

公开(公告)号：US20120262821A1

公开(公告)日：2012-10-18

申请号：US13296004

申请日：2011-11-14

申请人： Tomoko Taguchi ,  Masayuki Takagishi ,  Katsuhiko Koui ,  Kenichiro Yamada ,  Hitoshi Iwasaki

发明人： Tomoko Taguchi ,  Masayuki Takagishi ,  Katsuhiko Koui ,  Kenichiro Yamada ,  Hitoshi Iwasaki

IPC分类号： G11B5/23 ,  G11B17/02 ,  G11B5/48

CPC分类号： G11B5/314 ,  G11B5/235 ,  G11B2005/0024

摘要： According to one embodiment, a magnetic recording head includes a main pole configured to apply a recording magnetic field perpendicular to a recording medium, a trailing-shield pole opposed to the main pole with a recording gap therebetween, a high-frequency oscillator between the main pole and the trailing-shield pole in the recording gap, configured to produce a high-frequency magnetic field, a magnetic seed layer between the main pole and the high-frequency oscillator and in contact with the main pole, and a highly oriented magnetic layer of a soft magnetic material superposed on the magnetic seed layer between the main pole and the high-frequency oscillator and in contact with the high-frequency oscillator.

摘要翻译： 根据一个实施例，磁记录头包括被配置为施加垂直于记录介质的记录磁场的主极，与主极相对的后屏蔽极，其间具有记录间隙，在主体之间的高频振荡器 磁极和后屏蔽极在记录间隙中，被配置为产生高频磁场，主极和高频振荡器之间的磁性种子​​层，并与主极接触，并且高取向磁性层 叠置在主极与高频振荡器之间的磁性种子​​层上并与高频振荡器接触的软磁性材料。

公开(公告)号：US20090316303A1

公开(公告)日：2009-12-24

申请号：US12382940

申请日：2009-03-26

申请人： Kenichiro Yamada ,  Hitoshi Iwasaki ,  Masayuki Takagishi ,  Tomomi Funayama

发明人： Kenichiro Yamada ,  Hitoshi Iwasaki ,  Masayuki Takagishi ,  Tomomi Funayama

IPC分类号： G11B5/60

CPC分类号： G11B5/314 ,  G11B5/02 ,  G11B5/3146 ,  G11B2005/0005 ,  G11B2005/0024 ,  H03B15/006

摘要： A magnetic head assembly includes: a magnetic recording head, a head slider, a suspension and an actuator arm. The magnetic recording head includes a spin torque oscillator and a main magnetic pole. The spin torque oscillator includes, a first magnetic layer including at least one selected from the group consisting of a Fe—Co—Al alloy, a Fe—Co—Si alloy, a Fe—Co—Ge alloy, a Fe—Co—Mn alloy a Fe—Co—Cr alloy and a Fe—Co—B alloy, a second magnetic layer, and an intermediate layer provided between the first magnetic layer and the second magnetic layer. The main magnetic pole is placed together with the spin torque oscillator. The magnetic recording head is mounted on the head slider. The head slider is mounted on one end of the suspension. The actuator arm is connected to other end of the suspension.

摘要翻译： 磁头组件包括：磁记录头，磁头滑块，悬架和致动器臂。 磁记录头包括自旋扭矩振荡器和主磁极。 自旋转矩振荡器包括：第一磁性层，其包括选自由Fe-Co-Al合金，Fe-Co-Si合金，Fe-Co-Ge合金，Fe-Co-Mn 合金Fe-Co-Cr合金和Fe-Co-B合金，第二磁性层和设置在第一磁性层和第二磁性层之间的中间层。 主磁极与自旋扭矩振荡器一起放置。 磁记录头安装在磁头滑块上。 磁头滑块安装在悬架的一端。 执行器臂连接到悬架的另一端。

公开(公告)号：US08687321B2

公开(公告)日：2014-04-01

申请号：US12382940

申请日：2009-03-26

申请人： Kenichiro Yamada ,  Hitoshi Iwasaki ,  Masayuki Takagishi ,  Tomomi Funayama

发明人： Kenichiro Yamada ,  Hitoshi Iwasaki ,  Masayuki Takagishi ,  Tomomi Funayama

IPC分类号： G11B5/60

CPC分类号： G11B5/314 ,  G11B5/02 ,  G11B5/3146 ,  G11B2005/0005 ,  G11B2005/0024 ,  H03B15/006

摘要： A magnetic head assembly includes: a magnetic recording head, a head slider, a suspension and an actuator arm. The magnetic recording head includes a spin torque oscillator and a main magnetic pole. The spin torque oscillator includes, a first magnetic layer including at least one selected from the group consisting of a Fe—Co—Al alloy, a Fe—Co—Si alloy, a Fe—Co—Ge alloy, a Fe—Co—Mn alloy a Fe—Co—Cr alloy and a Fe—Co—B alloy, a second magnetic layer, and an intermediate layer provided between the first magnetic layer and the second magnetic layer. The main magnetic pole is placed together with the spin torque oscillator. The magnetic recording head is mounted on the head slider. The head slider is mounted on one end of the suspension. The actuator arm is connected to other end of the suspension.

摘要翻译： 磁头组件包括：磁记录头，磁头滑块，悬架和致动器臂。 磁记录头包括自旋扭矩振荡器和主磁极。 自旋转矩振荡器包括：第一磁性层，其包括选自由Fe-Co-Al合金，Fe-Co-Si合金，Fe-Co-Ge合金，Fe-Co-Mn 合金Fe-Co-Cr合金和Fe-Co-B合金，第二磁性层和设置在第一磁性层和第二磁性层之间的中间层。 主磁极与自旋扭矩振荡器一起放置。 磁记录头安装在磁头滑块上。 磁头滑块安装在悬架的一端。 执行器臂连接到悬架的另一端。

公开(公告)号：US08705204B2

公开(公告)日：2014-04-22

申请号：US13591012

申请日：2012-08-21

申请人： Tomoko Taguchi ,  Kenichiro Yamada ,  Katsuhiko Koui ,  Tomomi Funayama ,  Norihito Fujita

发明人： Tomoko Taguchi ,  Kenichiro Yamada ,  Katsuhiko Koui ,  Tomomi Funayama ,  Norihito Fujita

IPC分类号： G11B5/31

CPC分类号： G11B5/3116 ,  G11B2005/0002

摘要： According to one embodiment, a main pole of a recording head includes a first magnetic pole layer and a second magnetic pole layer laminated on the trailing side of the first magnetic pole layer. The first magnetic pole layer includes a tapered portion and a first tip portion. The second magnetic pole layer includes a tapered portion and a second tip portion. A width in a track direction of the second tip portion is smaller than that of the first tip portion. The high-frequency oscillator is between the second tip portion and the trailing shield and includes a width in the track direction substantially equal to the width in the track direction of the second tip portion, and a height of the first tip portion is taller than that of the second tip portion.

摘要翻译： 根据一个实施例，记录头的主极包括层叠在第一磁极层的后侧上的第一磁极层和第二磁极层。 第一磁极层包括锥形部分和第一末端部分。 第二磁极层包括锥形部分和第二尖端部分。 第二前端部的轨道方向的宽度小于第一前端部的宽度。 所述高频振荡器位于所述第二前端部与所述后屏蔽之间，并且包括所述轨道方向上的宽度大致等于所述第二前端部的轨道方向的宽度，所述第一前端部的高度高于所述第二前端部的高度。 的第二尖端部分。

公开(公告)号：US08064244B2

公开(公告)日：2011-11-22

申请号：US12456621

申请日：2009-06-19

申请人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou ,  Soichi Oikawa ,  Kenichiro Yamada ,  Katsuhiko Koui

发明人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou ,  Soichi Oikawa ,  Kenichiro Yamada ,  Katsuhiko Koui

IPC分类号： G11C11/00

CPC分类号： G01R33/098 ,  G01R33/1284 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T428/1107 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/1136 ,  Y10T428/1143

摘要： A spin valve structure for a spintronic device is disclosed and includes a composite seed layer made of at least Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (Co/Ni)x multilayer. The (Co/Ni)x multilayer is deposited by a low power and high Ar pressure process to avoid damaging Co/Ni interfaces and thereby preserving PMA. As a result, only a thin seed layer is required. PMA is maintained even after annealing at 220° C. for 10 hours. Examples of GMR and TMR spin valves are described and may be incorporated in spin transfer oscillators and spin transfer MRAMs. The free layer is preferably made of a FeCo alloy including at least one of Al, Ge, Si, Ga, B, C, Se, Sn, or a Heusler alloy, or a half Heusler alloy to provide high spin polarization and a low magnetic damping coefficient.

摘要翻译： 公开了一种用于自旋电子器件的自旋阀结构，并且包括至少由Ta制成的复合种子层和具有fcc（111）或hcp（001）织构的金属层，以增强覆盖层（Co）中的垂直磁各向异性（PMA） / Ni）x多层。 （Co / Ni）x多层通过低功率和高Ar压力工艺沉积，以避免损坏Co / Ni界面，从而保留PMA。 结果，仅需要薄的种子层。 即使在220℃退火10小时后也保持PMA。 描述了GMR和TMR自旋阀的实例，并且可以结合在自旋转移振荡器和自旋转移MRAM中。 自由层优选由包括Al，Ge，Si，Ga，B，C，Se，Sn或Heusler合金或Heusler合金中的至少一种的FeCo合金制成，以提供高自旋极化和低磁性 阻尼系数。

公开(公告)号：US20090257151A1

公开(公告)日：2009-10-15

申请号：US12456621

申请日：2009-06-19

申请人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou ,  Soichi Oikawa ,  Kenichiro Yamada ,  Katsuhiko Koui

发明人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou ,  Soichi Oikawa ,  Kenichiro Yamada ,  Katsuhiko Koui

IPC分类号： G11B5/33 ,  B05D5/00 ,  C23C14/35

CPC分类号： G01R33/098 ,  G01R33/1284 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T428/1107 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/1136 ,  Y10T428/1143

摘要： A spin valve structure for a spintronic device is disclosed and includes a composite seed layer made of at least Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (Co/Ni)x multilayer. The (Co/Ni)x multilayer is deposited by a low power and high Ar pressure process to avoid damaging Co/Ni interfaces and thereby preserving PMA. As a result, only a thin seed layer is required. PMA is maintained even after annealing at 220° C. for 10 hours. Examples of GMR and TMR spin valves are described and may be incorporated in spin transfer oscillators and spin transfer MRAMs. The free layer is preferably made of a FeCo alloy including at least one of Al, Ge, Si, Ga, B, C, Se, Sn, or a Heusler alloy, or a half Heusler alloy to provide high spin polarization and a low magnetic damping coefficient.

摘要翻译： 公开了一种用于自旋电子器件的自旋阀结构，并且包括至少由Ta制成的复合种子层和具有fcc（111）或hcp（001）织构的金属层，以增强覆盖层（Co）中的垂直磁各向异性（PMA） / Ni）x多层。 （Co / Ni）x多层通过低功率和高Ar压力工艺沉积，以避免损坏Co / Ni界面，从而保留PMA。 结果，仅需要薄的种子层。 即使在220℃退火10小时后也保持PMA。 描述了GMR和TMR自旋阀的实例，并且可以结合在自旋转移振荡器和自旋转移MRAM中。 自由层优选由包括Al，Ge，Si，Ga，B，C，Se，Sn或Heusler合金或Heusler合金中的至少一种的FeCo合金制成，以提供高自旋极化和低磁性 阻尼系数。