公开(公告)号：US20120295385A1

公开(公告)日：2012-11-22

申请号：US13559467

申请日：2012-07-26

申请人： Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes ,  Vincent Venezia ,  Yin Qian

发明人： Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes ,  Vincent Venezia ,  Yin Qian

IPC分类号： H01L31/0248

CPC分类号： H01L27/14609 ,  H01L27/14612 ,  H01L27/14643 ,  H01L27/14689 ,  H01L29/6659 ,  H01L29/66636

摘要： Embodiments of the present invention are directed to an image sensor having pixel transistors and peripheral transistors disposed in a silicon substrate. For some embodiments, a protective coating is disposed on the peripheral transistors and doped silicon is epitaxially grown on the substrate to form lightly-doped drain (LDD) areas for the pixel transistors. The protective oxide may be used to prevent epitaxial growth of silicon on the peripheral transistors during formation of the LDD areas of the pixel transistors.

摘要翻译： 本发明的实施例涉及一种具有设置在硅衬底中的像素晶体管和外围晶体管的图像传感器。 对于一些实施例，保护涂层设置在外围晶体管上，并且掺杂的硅在衬底上外延生长以形成用于像素晶体管的轻掺杂漏极（LDD）区域。 保护氧化物可以用于在像素晶体管的LDD区域的形成期间防止外围晶体管上的硅的外延生长。

公开(公告)号：US20120235212A1

公开(公告)日：2012-09-20

申请号：US13050285

申请日：2011-03-17

申请人： Gang Chen ,  Sing-Chung Hu ,  Duli Mao ,  Hsin-Chih Tai ,  Yin Qian ,  Vincent Venezia ,  Rongsheng Yang ,  Howard E. Rhodes

发明人： Gang Chen ,  Sing-Chung Hu ,  Duli Mao ,  Hsin-Chih Tai ,  Yin Qian ,  Vincent Venezia ,  Rongsheng Yang ,  Howard E. Rhodes

IPC分类号： H01L27/148 ,  H01L31/112 ,  H01L31/101

CPC分类号： H01L27/14656 ,  H01L27/14603 ,  H01L27/14689

摘要： Embodiments of a pixel including a photosensitive region formed in a surface of a substrate and an overflow drain formed in the surface of the substrate at a distance from the photosensitive area, an electrical bias of the overflow drain being variable and controllable. Embodiments of a pixel including a photosensitive region formed in a surface of a substrate, a source-follower transistor coupled to the photosensitive region, the source-follower transistor including a drain, and a doped bridge coupling the photosensitive region to the drain of the source-follower transistor.

摘要翻译： 包括在基板的表面形成的感光区域和形成在与光敏区域一定距离的基板的表面中的溢流漏极的像素的实施例，溢流漏极的电偏压是可变的和可控的。 包括形成在基板的表面中的感光区域的像素的实施例，耦合到感光区域的源极跟随器晶体管，包括漏极的源极跟随器晶体管以及将光敏区域耦合到源极的漏极的掺杂桥 更低的晶体管。

公开(公告)号：US20120019696A1

公开(公告)日：2012-01-26

申请号：US12842808

申请日：2010-07-23

申请人： Hsin-Chih Tai ,  Yin Qian ,  Duli Mao ,  Vincent Venezia

发明人： Hsin-Chih Tai ,  Yin Qian ,  Duli Mao ,  Vincent Venezia

IPC分类号： H04N5/335

CPC分类号： H04N9/045 ,  H01L27/14621 ,  H01L27/14643

摘要： A color image sensor is disclosed. The color image sensor includes a pixel array including a color filter array (“CFA”) overlaying an array of photo-sensors for acquiring a color image. The CFA includes first color filter elements of a first color overlaying a first group of the photo-sensors and second color filter elements of a second color overlaying a second group of the photo-sensors. The first color filter elements contribute to a first color channel of the color image and the second color filter elements contribute to a second color channel of the color image. The color image sensor further includes a color combiner unit coupled to combine the first color channel with the second color channel to generate a third color channel of the color image based on the first and second color channels. An output port is coupled to the pixel array to output the color image having three color channels including the first, second, and third color channels.

摘要翻译： 公开了彩色图像传感器。 彩色图像传感器包括像素阵列，其包括覆盖用于获取彩色图像的光电传感器阵列的滤色器阵列（“CFA”）。 CFA包括覆盖第一组光传感器的第一颜色的第一滤色器元件和覆盖第二组光传感器的第二颜色的第二滤色器元件。 第一滤色器元件有助于彩色图像的第一颜色通道，并且第二滤色器元件有助于彩色图像的第二颜色通道。 彩色图像传感器还包括颜色组合器单元，其被耦合以组合第一颜色通道和第二颜色通道，以基于第一和第二颜色通道生成彩色图像的第三颜色通道。 输出端口耦合到像素阵列以输出具有包括第一，第二和第三颜色通道的三个颜色通道的彩色图像。

公开(公告)号：US08063465B2

公开(公告)日：2011-11-22

申请号：US12260019

申请日：2008-10-28

申请人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

发明人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

IPC分类号： H01L31/00 ,  H01L31/0232

CPC分类号： H01L27/14647 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

摘要： A backside illuminated imaging sensor includes a vertical stacked sensor that reduces cross talk by using different silicon layers to form photodiodes at separate levels within a stack (or separate stacks) to detect different colors. Blue light-, green light-, and red light-detection silicon layers are formed, with the blue light detection layer positioned closest to the backside of the sensor and the red light detection layer positioned farthest from the backside of the sensor. An anti-reflective coating (ARC) layer can be inserted in between the red and green light detection layers to reduce the optical cross talk captured by the red light detection layer. Amorphous polysilicon can be used to form the red light detection layer to boost the efficiency of detecting red light.

摘要翻译： 背面照明成像传感器包括垂直堆叠传感器，其通过使用不同的硅层在堆叠（或单独的堆叠）内的不同级别形成光电二极管来减少串扰，以检测不同的颜色。 形成蓝光，绿光和红光检测硅层，蓝光检测层位于最靠近传感器背面的位置，红光检测层位于离传感器背面最远的位置。 可以在红色和绿色光检测层之间插入抗反射涂层（ARC）层，以减少由红光检测层捕获的光学交叉对话。 可以使用非晶多晶硅来形成红光检测层，以提高检测红光的效率。

公开(公告)号：US20110177650A1

公开(公告)日：2011-07-21

申请号：US12688768

申请日：2010-01-15

申请人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

发明人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

IPC分类号： H01L31/18 ,  H01L21/265

CPC分类号： H01L27/14689 ,  H01L21/26586 ,  H01L27/1461

摘要： An example method of forming a pinned photodiode includes applying a photoresist mask to a semiconductor layer at a location where a transfer gate will subsequently be formed. First dopant ions are then implanted at a first angle to form a first dopant region under an edge of the photoresist mask. Next, a photoresist mask is etched such that a thickness of the photoresist mask is reduced to form a trimmed photoresist mask. Second dopant ions are then implanted at a second angle to form a second dopant region, wherein the second dopant ions are shadowed by the trimmed photoresist mask to exclude the second dopant ions from a region partially above the first dopant region and adjacent to an edge of the trimmed photoresist mask.

摘要翻译： 形成钉扎光电二极管的示例性方法包括在随后形成传输栅极的位置处将光致抗蚀剂掩模施加到半导体层。 然后以第一角度注入第一掺杂剂离子以在光致抗蚀剂掩模的边缘下方形成第一掺杂剂区域。 接下来，蚀刻光致抗蚀剂掩模，使得光致抗蚀剂掩模的厚度减小以形成修整的光致抗蚀剂掩模。 然后以第二角度注入第二掺杂剂离子以形成第二掺杂剂区域，其中第二掺杂剂离子被修整的光致抗蚀剂掩模遮蔽，以从第一掺杂剂区域的部分上方的区域排除第二掺杂剂离子， 修剪光刻胶掩模。

公开(公告)号：US20110068429A1

公开(公告)日：2011-03-24

申请号：US12848628

申请日：2010-08-02

申请人： Vincent Venezia ,  Duli Mao ,  Hsin-Chih Tai ,  Yin Qian ,  Howard E. Rhodes

发明人： Vincent Venezia ,  Duli Mao ,  Hsin-Chih Tai ,  Yin Qian ,  Howard E. Rhodes

IPC分类号： H01L27/146 ,  H01L31/02

CPC分类号： H01L27/14656 ,  H01L27/1463 ,  H01L27/1464

摘要： An image sensor array includes a substrate layer, a metal layer, an epitaxial layer, a plurality of imaging pixels, and a contact dummy pixel. The metal layer is disposed above the substrate layer. The epitaxial layer is disposed between the substrate layer and the metal layer. The imaging pixels are disposed within the epitaxial layer and each include a photosensitive element for collecting an image signal. The contact dummy pixel is dispose within the epitaxial layer and includes an electrical conducting path through the epitaxial layer. The electrical conducting path couples to the metal layer above the epitaxial layer.

摘要翻译： 图像传感器阵列包括基底层，金属层，外延层，多个成像像素和接触虚拟像素。 金属层设置在基底层的上方。 外延层设置在基板层和金属层之间。 成像像素设置在外延层内，并且每个包括用于收集图像信号的光敏元件。 接触虚拟像素配置在外延层内并且包括穿过外延层的导电路径。 导电路径耦合到外延层上方的金属层。

公开(公告)号：US07902618B2

公开(公告)日：2011-03-08

申请号：US12272677

申请日：2008-11-17

申请人： Duli Mao ,  Vincent Venezia ,  Hsin-Chih Tai ,  Yin Qian ,  Howard E. Rhodes

发明人： Duli Mao ,  Vincent Venezia ,  Hsin-Chih Tai ,  Yin Qian ,  Howard E. Rhodes

IPC分类号： H01L27/14

CPC分类号： H01L27/14603 ,  H01L27/14605 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14683 ,  H01L27/14689

摘要： A backside illuminated imaging pixel with improved angular response includes a semiconductor layer having a front and a back surface. The imaging pixel also includes a photodiode region formed in the semiconductor layer. The photodiode region includes a first and a second n-region. The first n-region has a centerline projecting between the front and back surfaces of the semiconductor layer. The second n-region is disposed between the first n-region and the back surface of the semiconductor layer such that the second n-region is offset from the centerline of the first n-region.

摘要翻译： 具有改进的角度响应的背面照明成像像素包括具有前表面和后表面的半导体层。 成像像素还包括形成在半导体层中的光电二极管区域。 光电二极管区域包括第一和第二n区域。 第一n区具有在半导体层的前表面和后表面之间突出的中心线。 第二n区设置在半导体层的第一n区和背表面之间，使得第二n区偏离第一n区的中心线。

公开(公告)号：US20100123174A1

公开(公告)日：2010-05-20

申请号：US12274275

申请日：2008-11-19

申请人： Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes ,  Vincent Venezia ,  Yin Qian

发明人： Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes ,  Vincent Venezia ,  Yin Qian

IPC分类号： H01L31/062 ,  H01L29/78 ,  H01L21/02 ,  H01L21/336

CPC分类号： H01L27/14609 ,  H01L27/14612 ,  H01L27/14643 ,  H01L27/14689 ,  H01L29/6659 ,  H01L29/66636

摘要： Embodiments of the present invention are directed to an image sensor having pixel transistors and peripheral transistors disposed in a silicon substrate. For some embodiments, a protective coating is disposed on the peripheral transistors and doped silicon is epitaxially grown on the substrate to form lightly-doped drain (LDD) areas for the pixel transistors. The protective oxide may be used to prevent epitaxial growth of silicon on the peripheral transistors during formation of the LDD areas of the pixel transistors.

摘要翻译： 本发明的实施例涉及一种具有设置在硅衬底中的像素晶体管和外围晶体管的图像传感器。 对于一些实施例，保护涂层设置在外围晶体管上，并且掺杂的硅在衬底上外延生长以形成用于像素晶体管的轻掺杂漏极（LDD）区域。 保护氧化物可以用于在像素晶体管的LDD区域的形成期间防止外围晶体管上的硅的外延生长。

公开(公告)号：US20100109060A1

公开(公告)日：2010-05-06

申请号：US12266314

申请日：2008-11-06

申请人： Duli Mao ,  Vincent Venezia ,  Hsin-Chih Tai ,  Yin Qian ,  Howard E. Rhodes

发明人： Duli Mao ,  Vincent Venezia ,  Hsin-Chih Tai ,  Yin Qian ,  Howard E. Rhodes

IPC分类号： H01L31/18 ,  H01L27/146

CPC分类号： H01L27/14603 ,  H01L27/1463 ,  H01L27/1464

摘要： An array of pixels is formed using a substrate. Each pixel can be formed on the substrate, which has a backside and a frontside that includes metalization layers. A photodiode is formed in the substrate and frontside P-wells are formed using frontside processing that are adjacent to the photosensitive region. A first N-type region is formed in the substrate below the photodiode. A second N-type region is formed in a region of the substrate below the first N-type region and is formed using backside processing.

摘要翻译： 使用衬底形成像素阵列。 每个像素可以形成在衬底上，衬底具有背面和包括金属化层的前端。 在衬底中形成光电二极管，并且使用与感光区域相邻的前端处理来形成前端P阱。 在光电二极管下面的衬底中形成第一N型区域。 第二N型区域形成在第一N型区域下方的基板的区域中，并且使用背面处理形成。

公开(公告)号：US20100013039A1

公开(公告)日：2010-01-21

申请号：US12177035

申请日：2008-07-21

申请人： Yin Qian ,  Hsin-Chih Tai ,  Vincent Venezia ,  Duli Mao ,  Howard E. Rhodes

发明人： Yin Qian ,  Hsin-Chih Tai ,  Vincent Venezia ,  Duli Mao ,  Howard E. Rhodes

IPC分类号： H01L27/146 ,  H01L21/00

CPC分类号： H01L27/14685 ,  H01L27/1464

摘要： The disclosure describes embodiments of a process comprising forming a pixel on a frontside of a substrate, the substrate having a frontside, a backside, and a thickness substantially equal to a distance between the frontside and the backside. The thickness of the substrate is reduced by removing material from the backside of the substrate to allow for backside illumination of the pixel, and the backside of the substrate is treated with a hydrogen plasma to passivate the backside. The disclosure also describes embodiments of an apparatus comprising a semiconductor wafer having a frontside, a backside, and a thickness substantially equal to a distance between the frontside and the backside, and a pixel formed on the frontside, wherein the thickness of the wafer is selected and adjusted to allow for illumination of the pixel through the backside of the wafer, and wherein the backside is treated with a hydrogen plasma to passivate the backside.

摘要翻译： 本公开描述了一种方法的实施例，包括在衬底的前侧形成像素，衬底具有前侧，后侧以及基本上等于前侧和后侧之间的距离的厚度。 通过从衬底的背面去除材料以允许像素的背面照明来减小衬底的厚度，并且用氢等离子体处理衬底的背面以钝化背面。 本公开还描述了包括半导体晶片的装置的实施例，其具有前侧，后侧以及基本上等于前侧和后侧之间的距离的厚度以及形成在前侧的像素，其中选择晶片的厚度 并且被调整为允许通过晶片的背面照射像素，并且其中背面用氢等离子体处理以钝化背面。