摘要:
Methods are provided for the construction of metal-to-metal connections between non-adjacent layers in a structure, such as a semiconductor device. A first metal conductor layer is provided along a substrate. An anti-reflection cap is provided in overlying relation with said first conductor layer. At least a portion of the dielectric layer and the anti-reflection cap is removed to define a passage which extends from an upper surface of the dielectric layer to the first metal conductor. The passage is substantially filled with a fill metal, and a second metal conductor layer is applied over at least a portion of the dielectric layer and the substantially filled passage to electrically connect the first and second metal conductors. A diffusion liner can optionally be applied to the passage prior to application of the fill metal. The passage fill metal and second conductor layer can be integrally formed, and the fill metal and at least one of the conductor layers are formed from the same matrix metal.
摘要:
In one embodiment a method is provided for maintaining a substrate processing surface. The method generally includes performing a set of measurements on the substrate processing surface, wherein the set of measurements are taken using a displacement sensor coupled to a processing surface conditioning arm, determining a processing surface profile based on the set of measurements, comparing the processing surface profile to a minimum profile threshold, and communicating a result of the profile comparison.
摘要:
In one embodiment a method is provided for maintaining a substrate processing surface. The method generally includes performing a set of measurements on the substrate processing surface, wherein the set of measurements are taken using a displacement sensor coupled to a processing surface conditioning arm, determining a processing surface profile based on the set of measurements, comparing the processing surface profile to a minimum profile threshold, and communicating a result of the profile comparison.
摘要:
Laser scribing can be performed on a workpiece (104) such as substrates with layers formed thereon for use in a solar panel without need to rotate the workpiece (104) during the scribing process. A series of lasers (602, 622) can be used to concurrently remove material from multiple positions on the workpiece (104). Each laser (602, 622) can have at least one scanning device (614, 630, 632) positioned along a beam path thereof in order to adjust a position of the laser output relative to the workpiece (104). By adjusting the beam or pulse positions using the scanning devices (614, 630, 632) while translating the workpiece (104), substantially any pattern can be scribed into at least one layer of the workpiece (104) without the need for any rotation of the workpiece (104).
摘要:
Methods and apparatus for cleaning an edge of a substrate are provided. The invention includes a polishing film having a polishing side and a second side; an inflatable pad disposed adjacent the second side of the polishing film; a frame adapted to support the polishing film and the inflatable pad; and a substrate rotation driver adapted to rotate a substrate against the polishing side of the polishing film, wherein the polishing film is disposed between an edge of the substrate and the inflatable pad so that the inflatable pad and polishing film contour to the edge of the substrate with the polishing film contacting the edge of the substrate. Numerous other aspects are provided.
摘要:
A method of processing a substrate having a conductive material layer disposed thereon is provided which includes positioning the substrate in a process apparatus and supplying a first polishing composition between to the substrate. The polishing composition comprises a first chelating agent, a second chelating agent, a first corrosion inhibitor, a second corrosion inhibitor, a suppressor, a solvent, and an inorganic acid based electrolyte to provide a pH between about 3 and about 10.
摘要:
Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a method is provided for processing a substrate to remove conductive material disposed over narrow feature definitions formed in a substrate at a higher removal rate than conductive material disposed over wide feature definitions formed in a substrate by an electrochemical mechanical polishing technique, and then polishing the substrate by at least a chemical mechanical polishing technique.
摘要:
A method for controlling the removal rate of material from a substrate during a polishing process is described. In one embodiment, the pre-polish profile of the substrate is determined and polishing pad conditioning parameters are adjusted based on that profile. Parameters such as conditioning head sweep range and frequency, and conditioning element downforce and RPM may be adjusted to selectively condition portions of the pad to maintain optimum polishing qualities of the pad.
摘要:
In one aspect, a method for cleaning an edge of a substrate is provided. The method includes the steps of (a) supporting a substrate on a rotatable substrate support; (b) contacting an edge of the substrate with one or more rollers; (c) rotating the substrate support so as to rotate the substrate; and (d) rotating the one or more rollers so as to clean the edge of the substrate Numerous other aspects are provided.
摘要:
Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a composition includes an acid based electrolyte system, a corrosion inhibitor having an azole group, an organic acid salt, a pH adjusting agent to provide a pH between about 2 and about 10, and a solvent, and a solvent. The composition may be used in a conductive material removal process including disposing a substrate having a conductive material layer formed thereon in a process apparatus comprising an electrode, providing the composition between the electrode and substrate, applying a bias between the electrode and the substrate, and removing conductive material from the conductive material layer. The polishing compositions and methods described herein improve the effective removal rate of materials from the substrate surface, such as copper, with a reduction in planarization type defects and yielding a desirable surface finish.