公开(公告)号：US07235461B2

公开(公告)日：2007-06-26

申请号：US10832267

申请日：2004-04-27

申请人： Christophe Maleville ,  Corinne Maunand Tussot ,  Olivier Rayssac ,  Sébastien Kerdiles ,  Benjamin Scarfogliere ,  Hubert Moriceau ,  Christophe Morales

发明人： Christophe Maleville ,  Corinne Maunand Tussot ,  Olivier Rayssac ,  Sébastien Kerdiles ,  Benjamin Scarfogliere ,  Hubert Moriceau ,  Christophe Morales

IPC分类号： H01L21/46

CPC分类号： H01L21/76259 ,  H01L21/2007 ,  H01L21/76251 ,  H01L21/76254

摘要： A method for bonding semiconductor structures together is described. The technique includes providing a bonding surface on each of two semiconductor structures, brushing a bonding surface of at least one of the structures to remove contaminants and to activate hydroxyl groups on the bonding surface to enhance hydrophilicity and to facilitate molecular bonding of the structures, and joining the bonding surfaces together by molecular bonding to form a composite structure.

摘要翻译： 描述将半导体结构结合在一起的方法。 该技术包括在两个半导体结构中的每一个上提供接合表面，刷洗至少一个结构的结合表面以去除污染物并激活接合表面上的羟基以增强亲水性并促进结构的分子结合，以及 通过分子键合将接合表面结合在一起以形成复合结构。

公开(公告)号：US07232739B2

公开(公告)日：2007-06-19

申请号：US11447863

申请日：2006-06-07

申请人： Sèbastien Kerdiles ,  Fabrice Letertre ,  Christophe Morales ,  Hubert Moriceau

发明人： Sèbastien Kerdiles ,  Fabrice Letertre ,  Christophe Morales ,  Hubert Moriceau

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/02032 ,  H01L21/76254 ,  H01L21/76259 ,  H01L33/0079 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods are provided for producing a transfer layer of a semiconductor material on a final substrate. In some embodiments, the transfer layer is produced on the final substrate by forming a layer of semiconductor material on an initial support, assembling that layer and a final substrate by metal bonding, and mechanically separating the initial support from the layer at a weak interface that initially attached the layer to the initial support. An intermediate substrate can be obtained which can be used to fabricate a variety of components such as light-emitting diodes or laser diodes. These techniques can produce a transfer layer on a final substrate and a recyclable initial support that can be detached from the transfer layer for recycling by a non-destructive mechanical release.

摘要翻译： 提供了用于在最终基板上制造半导体材料的转移层的方法。 在一些实施方案中，通过在初始载体上形成半导体材料层，通过金属键合组装该层和最终的基底，并在初始载体与薄层的弱界面机械分离，在最终的基底上产生转移层， 最初将层附加到初始支持。 可以获得可用于制造诸如发光二极管或激光二极管的各种部件的中间基板。 这些技术可以在最终的基底上产生转移层，并且可再循环的初始载体可以从转移层分离出来，以便通过非破坏性的机械释放再循环。

公开(公告)号：US07189632B2

公开(公告)日：2007-03-13

申请号：US10744867

申请日：2003-12-22

申请人： Sèbastien Kerdiles ,  Fabrice Letertre ,  Christophe Morales ,  Hubert Moriceau

发明人： Sèbastien Kerdiles ,  Fabrice Letertre ,  Christophe Morales ,  Hubert Moriceau

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/02032 ,  H01L21/76254 ,  H01L21/76259 ,  H01L33/0079 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods are provided for producing a transfer layer of a semiconductor material on a final substrate. In some embodiments, the transfer layer is produced on the final substrate by forming a layer of semiconductor material on an initial support, assembling that layer and a final substrate by metal bonding, and mechanically separating the initial support from the layer at a weak interface that initially attached the layer to the initial support. An intermediate substrate can be obtained which can be used to fabricate a variety of components such as light-emitting diodes or laser diodes. These techniques can produce a transfer layer on a final substrate and a recyclable initial support that can be detached from the transfer layer for recycling by dint of non-destructive mechanical release.

摘要翻译： 提供了用于在最终基板上制造半导体材料的转移层的方法。 在一些实施方案中，通过在初始载体上形成半导体材料层，通过金属键合组装该层和最终的基底，并在初始载体与薄层的弱界面机械分离，在最终的基底上产生转移层， 最初将层附加到初始支持。 可以获得可用于制造诸如发光二极管或激光二极管的各种部件的中间基板。 这些技术可以在最终的基底上产生转移层，并且可再循环的初始载体可以从转移层分离出来，以便通过非破坏性的机械释放进行再循环。

公开(公告)号：US20060281212A1

公开(公告)日：2006-12-14

申请号：US10565621

申请日：2004-07-15

申请人： Hubert Moriceau ,  Bernard Aspar ,  Jacques Margail

发明人： Hubert Moriceau ,  Bernard Aspar ,  Jacques Margail

IPC分类号： H01L21/00

CPC分类号： B81B3/001 ,  B81C2201/112 ,  H01L21/76251 ,  H01L21/76256

摘要： The invention relates to a method of producing a stacked structure. The inventive method comprises the following steps consisting in: a) using a first plate (1) which is, for example, made from silicon, and a second plate (5) which is also, for example, made from silicon, such that at least one of said first (1) and second (5) plates has, at least in part, a surface (2; 7) that cannot bond to the other plate; b) providing a surface layer (3; 8), which is, for example, made from silicon oxide, on at least one part of the surface (2) of the first plate and/or the surface (7) of the second plate (5); and c) bonding the two plates (1; 5) to one another. The aforementioned bonding incompatibility can, for example, result from the physicochemical nature of the surface or of a coating applied thereto, or from a roughness value (r′2, r′7) which is greater than a predetermined threshold. The invention also relates to a stacked structure produced using the inventive method.

摘要翻译： 本发明涉及一种堆叠结构的制造方法。 本发明的方法包括以下步骤：a）使用例如由硅制成的第一板（1）和例如由硅制成的第二板（5），使得在 至少部分地，所述第一（1）和第二（5）板中的至少一个具有不能结合到另一个板的表面（2; 7） b）在第一板的表面（2）和/或第二板的表面（7）的至少一部分上提供例如由氧化硅制成的表面层（3; 8） （5）; 和c）将两个板（1; 5）彼此粘合。 上述粘合不相容性例如可以由表面或施加于其上的涂层的物理化学性质或由粗糙度值（r'2，r'7 >）大于预定阈值。 本发明还涉及使用本发明方法制造的堆叠结构。

公开(公告)号：US20060228820A1

公开(公告)日：2006-10-12

申请号：US11447863

申请日：2006-06-07

申请人： Sebastien Kerdiles ,  Fabrice Letertre ,  Christophe Morales ,  Hubert Moriceau

发明人： Sebastien Kerdiles ,  Fabrice Letertre ,  Christophe Morales ,  Hubert Moriceau

IPC分类号： H01L21/00 ,  H01L21/30

CPC分类号： H01L21/02032 ,  H01L21/76254 ,  H01L21/76259 ,  H01L33/0079 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods are provided for producing a transfer layer of a semiconductor material on a final substrate. In some embodiments, the transfer layer is produced on the final substrate by forming a layer of semiconductor material on an initial support, assembling that layer and a final substrate by metal bonding, and mechanically separating the initial support from the layer at a weak interface that initially attached the layer to the initial support. An intermediate substrate can be obtained which can be used to fabricate a variety of components such as light-emitting diodes or laser diodes. These techniques can produce a transfer layer on a final substrate and a recyclable initial support that can be detached from the transfer layer for recycling by a non-destructive mechanical release.

摘要翻译： 提供了用于在最终基板上制造半导体材料的转移层的方法。 在一些实施方案中，通过在初始载体上形成半导体材料层，通过金属键合组装该层和最终的基底，并在初始载体与薄层的弱界面机械分离，在最终的基底上产生转移层， 最初将层附加到初始支持。 可以获得可用于制造诸如发光二极管或激光二极管的各种部件的中间基板。 这些技术可以在最终的基底上产生转移层，并且可再循环的初始载体可以从转移层分离出来，以便通过非破坏性的机械释放再循环。

公开(公告)号：US06991995B2

公开(公告)日：2006-01-31

申请号：US10784032

申请日：2004-02-20

申请人： Cécile Aulnette ,  Benoît Bataillou ,  Bruno Ghyselen ,  Hubert Moriceau

发明人： Cécile Aulnette ,  Benoît Bataillou ,  Bruno Ghyselen ,  Hubert Moriceau

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76254 ,  H01L21/76259

摘要： A method of producing a semiconductor structure having at least one support substrate and an ultrathin layer. The method includes bonding a support substrate to a source substrate, detaching a useful layer along a zone of weakness to obtain an intermediate structure including at least the transferred useful layer and the support substrate, and treating the transferred useful layer to obtain an ultrathin layer on the support substrate. The source substrate includes a front face and a zone of weakness below the front face that defines the useful layer, and the useful layer is sufficiently thick to withstand heat treatments without forming defects therein so that it can be reduced in thickness to form the ultrathin layer. The resulting ultrathin layer is suitable for use in applications in the fields of electronics, optoelectronics or optics.

摘要翻译： 一种制造具有至少一个支撑基板和超薄层的半导体结构的方法。 该方法包括将支撑衬底接合到源衬底，沿着弱区分离有用层以获得包括至少转移的有用层和支撑衬底的中间结构，以及处理转移的有用层以获得超薄层 支撑基板。 源极基板包括限定有用层的前表面和弱化区，并且有用层足够厚以承受热处理而不在其中形成缺陷，使得其可以减小厚度以形成超薄层 。 所得的超薄层适用于电子，光电子学或光学领域的应用。

公开(公告)号：US20050130393A1

公开(公告)日：2005-06-16

申请号：US10840581

申请日：2004-05-05

申请人： Beryl Blondeau ,  Ian Cayrefourcq ,  Eric Guiot ,  Thibaut Maurice ,  Hubert Moriceau

发明人： Beryl Blondeau ,  Ian Cayrefourcq ,  Eric Guiot ,  Thibaut Maurice ,  Hubert Moriceau

IPC分类号： H01L21/762 ,  C30B1/00 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L21/76251 ,  H01L21/76254

摘要： A method for improving the quality of a heterostructure that includes at least two layers of material that have different thermal expansion coefficients is described. The method includes applying a cap layer to the exposed surface of at least one of the layers. The cap layer is made of a material and has a thickness sufficient to reduce defects in at least one of the two layers during subsequent thermal treatment of the heterostructure. The present technique is a reliable and effective method for improving the quality of a heterostructure.

摘要翻译： 描述了一种改善异质结构质量的方法，其包括具有不同热膨胀系数的至少两层材料。 该方法包括将帽层施加到至少一层的暴露表面。 盖层由材料制成，并且具有足以在随后的异质结构热处理期间减少两层中的至少一层中的缺陷的厚度。 本技术是提高异质结构质量的可靠而有效的方法。

公开(公告)号：US20050112845A1

公开(公告)日：2005-05-26

申请号：US10968695

申请日：2004-10-18

申请人： Bruno Ghyselen ,  Hubert Moriceau

发明人： Bruno Ghyselen ,  Hubert Moriceau

IPC分类号： H01L27/12 ,  H01L21/02 ,  H01L21/322 ,  H01L21/762 ,  H01L29/32 ,  H01L21/30

CPC分类号： H01L21/3225 ,  H01L21/3226 ,  H01L21/76254 ,  H01L29/32

摘要： A method for fabricating a substrate containing a useful semiconductor layer on a support having high resistivity by: preparing a base substrate of a semiconductor material containing a controlled quantity of interstitial oxygen, heat treating the base substrate to achieve at least partial precipitation of the interstitial oxygen therein, removing a superficial layer over a controlled depth from a surface of the base substrate that intended to receive a useful layer, forming the useful layer on the surface of the base substrate, with the base substrate serving as a support for the useful layer. This method is applicable in particular to SOI substrates having high resistivity for use in forming high frequency electronic circuits.

摘要翻译： 一种在具有高电阻率的支持体上制造含有有用的半导体层的基板的方法，该方法包括：制备含有受控量的间隙氧的半导体材料的基底，热处理基底以实现间隙氧的至少部分沉淀 在基底基板的表面上，在基底基板的表面上从受控的深度去除表层，形成有用层，基底基板作为有用层的支撑体。 该方法特别适用于用于形成高频电子电路的具有高电阻率的SOI衬底。

公开(公告)号：US08975156B2

公开(公告)日：2015-03-10

申请号：US10584052

申请日：2004-12-21

申请人： Stephane Pocas ,  Hubert Moriceau ,  Jean-Francois Michaud

发明人： Stephane Pocas ,  Hubert Moriceau ,  Jean-Francois Michaud

IPC分类号： H01L21/00 ,  H01L21/46 ,  H01L21/18 ,  H01L21/265 ,  H01L21/266

CPC分类号： H01L21/187 ,  H01L21/26506 ,  H01L21/266

摘要： A method of sealing a first wafer and a second wafer each made of semiconducting materials, including: implanting a metallic species in at least the first wafer, assembling the first wafer and the second wafer by molecular bonding, and after the molecular bonding, forming a metallic ohmic contact including alloys formed between the implanted metallic species and the semiconducting materials of the first wafer and the second wafer, the metallic ohmic contact being formed at an assembly interface between the first wafer and the second wafer, wherein the forming includes causing the implanted metallic species to diffuse towards the interface between the first wafer with the second wafer and beyond the interface.

摘要翻译： 一种密封由半导体材料制成的第一晶片和第二晶片的方法，包括：在至少第一晶片中注入金属物质，通过分子键合装配第一晶片和第二晶片，并在分子键合之后形成 金属欧姆接触，包括在注入的金属物质和第一晶片和第二晶片的半导体材料之间形成的合金，金属欧姆接触形成在第一晶片和第二晶片之间的组装界面处，其中形成包括使植入 金属物质朝向第一晶片与第二晶片之间的界面扩散并超出界面。

公开(公告)号：US08871607B2

公开(公告)日：2014-10-28

申请号：US12663096

申请日：2008-06-06

申请人： Thomas Signamarcheix ,  Franck Fournel ,  Hubert Moriceau

发明人： Thomas Signamarcheix ,  Franck Fournel ,  Hubert Moriceau

IPC分类号： H01L21/30 ,  H01L21/8238 ,  H01L21/762 ,  H01L21/8258 ,  H01L21/84

CPC分类号： H01L21/8258 ,  H01L21/76254 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/84

摘要： A method for producing a hybrid substrate, including a support substrate, a continuous buried insulator layer and, on this continuous layer, a hybrid layer including alternating zones of a first material and at least one second material, wherein these two materials are different by their nature and/or their crystallographic characteristics. The method forms a hybrid layer, including alternating zones of first and second materials, on a homogeneous substrate, assembles this hybrid layer, the continuous insulator layer and the support substrate, and eliminates a part at least of the homogeneous substrate, before or after the assembling.

摘要翻译： 一种制造混合基板的方法，包括支撑基板，连续埋层绝缘体层，并且在该连续层上，包括第一材料和至少一种第二材料的交替区域的混合层，其中这两种材料由它们 性质和/或其晶体学特征。 该方法形成混合层，包括在均匀基底上的第一和第二材料的交替区，组装该混合层，连续绝缘体层和支撑衬底，并且在第一和第二材料之前或之后形成至少均匀的衬底的部分 组装。