Metal complex compositions and methods for making metal-containing films
    47.
    发明授权
    Metal complex compositions and methods for making metal-containing films 有权
    金属络合物组合物和制备含金属膜的方法

    公开(公告)号:US08362220B2

    公开(公告)日:2013-01-29

    申请号:US12595384

    申请日:2008-04-09

    IPC分类号: C07F5/02 C08F10/00

    摘要: The present invention provides compositions of matter useful as deposition agents for making structures, including thin film structures and hard coatings, on substrates and features of substrates. In an embodiment, for example, the present invention provides metal complexes having one or more diboranamide or diboranaphosphide ligands that are useful as chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) precusors for making thin film structures and coatings. Metal complex CVD precursors are provided that possess volitilities sufficiently high so as to provide dense, smooth and homogenous thin films and coatings.

    摘要翻译: 本发明提供了可用作沉积剂的组合物,其用于在基材和基材的特征上制造包括薄膜结构和硬涂层的结构。 在一个实施方案中,例如,本发明提供具有一个或多个二硼酰胺或二硼化磷配体的金属配合物,其可用作用于制备薄膜结构和涂层的化学气相沉积(CVD)和/或原子层沉积(ALD)预处理剂。 提供具有足够高的挥发性以提供致密,光滑和均匀的薄膜和涂层的金属络合CVD前体。