摘要:
Disclosed is a shielded clock tree that has one or more clock signal buffers and clock signal splitters, with clock signal wiring connecting the clock signal buffers to the clock signal splitters. Shielding is adjacent the clock signal wiring, where ground wiring connects the shielding to ground. The shielding comprises shield wires positioned adjacent and parallel to the clock signal wiring. The invention provides switches in the ground wiring, and these switches are connected to, and controlled by, a test controller.
摘要:
A circuit layout methology is provided for eliminating the extra processing time and file-space requirements associated with the optical proximity correction (OPC) of a VLSI design. The methodology starts with the design rules for a given manufacturing technology and establishes a new set of layer-specific grid values. A layout obeying these new grid requirements leads to a significant reduction in data preparation time, cost, and file size. A layout-migration tool can be used to modify an existing layout in order to enforce the new grid requirements.
摘要:
A structure and associated method of processing data on a semi-conductor device comprising an input island, a processing island, and an output island formed on the semiconductor device. The input island is adapted to accept a specified amount of data and enable a means for providing a first specified voltage for powering the processing island after accepting the specified amount of data. The processing island is adapted to receive and process the specified amount of data from the input island upon powering the processing island by the first specified voltage. The output island is adapted to be powered by a second specified voltage. The processing island is further adapted to transmit the processed data to the output island upon said powering by the second specified voltage. The first specified voltage is adapted to be disabled thereby removing power from processing island upon completion of transmission of the processed data to the output island.
摘要:
A multiple supply gate array structure facilitated by the provision of a shared n-well and an isolated n-well is described. The gate array structure allows implementation of a single voltage circuit or a multiple voltage circuit. In addition, the gate array structure allows metal reprogram to provide standard logic functions, or special logic functions such as a buffer function for a signal crossing a voltage island boundary. Other special logic functions may include, for example, a level-shifter function or a fence-hold function.
摘要:
A method for defect diagnosis of semiconductor chip. The method comprises the steps of (a) identifying M design structures and N physical characteristics of the circuit design, wherein M and N are positive integers, wherein each design structure of the M design structures is testable as to pass or fail, and wherein each physical characteristic of the N physical characteristics is present in at least one design structure of the M design structures; (b) for each design structure of the M design structures of the circuit design, determining a fail rate and determining whether the fail rate is high or low; and (c) if every design structure of the M design structures in which a physical characteristic of the N physical characteristics is present has a high fail rate, then flagging the physical characteristic as being likely to contain at least a defect.
摘要:
An integrated circuit, method and system providing finer granularity dynamic voltage control without performance loss. The invention provides a means for dynamically changing a voltage level of at least one stage on a critical path for a particular cycle. In this way, optimum voltages can be provided to the stages for the given expectation.
摘要:
A method for checking integrated circuit designs comprising the steps of calculating a first performance parameter by analyzing the network's sensitivity to a signal applied to the network; comparing the first performance parameter to one or more rules to determine a first pass condition and writing the value of first performance parameter to a netlist file in response to a pass to the first pass condition; followed by calculating a second performance parameter based on a first network model to determine a second pass condition in response to a fail to said first pass condition and writing the second performance parameter to the netlist file in response to a pass to said second pass condition or writing an error flag to the netlist file in response to a fail to said second pass condition is disclosed. The method, at each step, decides if a quick to calculate parameter provides sufficient design margin or if a more accurate but longer to calculate parameter is required.
摘要:
A method for reducing leakage power of a logic network comprising the steps of: using (observability) don't care information to identify “sleep states” for individual nets; determining based on probabilistic analysis at least one net in which expected power consumption will be reduced by forcing a net to a particular value during at least a portion of a “sleep state”; and forcing the determined net to the determined value determined portion of that “sleep state”.
摘要:
A method and a related program storage product for adding decoupling capacitance in an integrated circuit during the floor planning stage of the integrated circuit design. The invention overlay a power grid on the floor plan and then divides the power grid into regions or macros. For each region or macro, a support decoupling capacitance value required to support a voltage of the power grid and a native capacitance value are determined. Based on those values, a required decoupling capacitance value along with its decoupling capacitance area is determined. The design is then alternated based on the decoupling capacitance area.
摘要:
A structure for a semiconductor chip which includes a first region having first cells for storing and processing data, and a second region outside the first region having OPC structures, wherein the OPC structures comprise decoupling capacitors. The line widths of the active gates of first cells are the same size or similar in size as the OPC structures. The OPC structures reduce proximity effects of active devices in the first cells, and comprise N-type FETs and P-type FETs, that are located in the second region. The OPC structures may have a width greater than the first cells. The second region can be multiple OPC structures, whereby the second region comprises multiple decoupling capacitors. The active devices in the first cells are separated by a first distance and the OPC structures are separated from the active devices by the first distance.