Organic light emitting diode display and manufacturing method thereof
    41.
    发明授权
    Organic light emitting diode display and manufacturing method thereof 有权
    有机发光二极管显示及其制造方法

    公开(公告)号:US08436357B2

    公开(公告)日:2013-05-07

    申请号:US13067025

    申请日:2011-05-03

    IPC分类号: H01L29/04

    摘要: Making an OLED display, includes forming a first storage plate and a gate insulating layer covering the first storage plate on a substrate; sequentially forming a second storage plate covering the first storage plate and a capacitor intermediate in the gate insulating layer; forming a first doping region by injecting an impurity to a part that is not covered by the capacitor intermediate in the first storage plate; forming an interlayer insulating layer having a capacitor opening exposing the capacitor intermediate, and a plurality of erosion preventing layers on an edge of the capacitor intermediate toward the first doping region in the capacitor opening; removing the capacitor intermediate including the erosion preventing layer and a lower region of the erosion preventing layer, and injecting an impurity in the first storage plate through the second storage plate to form a second doping region contacting the first doping region.

    摘要翻译: 制造OLED显示器包括在基板上形成覆盖第一存储板的第一存储板和栅极绝缘层; 顺序地形成覆盖第一存储板的第二存储板和在栅极绝缘层中间的电容器; 通过向第一存储板中未被电容器中间体覆盖的部分注入杂质而形成第一掺杂区; 形成具有使所述电容器中间露出的电容器开口的层间绝缘层,以及在所述电容器开口中的朝向所述第一掺杂区域的电容器的边缘上的多个防蚀蚀层; 去除包括侵蚀防止层的电容器中间件和侵蚀防止层的下部区域,以及通过第二存储板在第一存储板中注入杂质以形成与第一掺杂区域接触的第二掺杂区域。

    Thin film transitor, fabrication method of the same, and display device having the same
    42.
    发明申请
    Thin film transitor, fabrication method of the same, and display device having the same 有权
    薄膜转换器及其制造方法以及具有该薄膜晶体管的显示装置

    公开(公告)号:US20110248279A1

    公开(公告)日:2011-10-13

    申请号:US12929733

    申请日:2011-02-11

    IPC分类号: H01L29/786 H01L21/336

    摘要: A thin film transistor, a method of manufacturing the same, and a display device including the same, the thin film transistor including a substrate; a polysilicon semiconductor layer on the substrate; and a metal pattern between the semiconductor layer and the substrate, the metal pattern being insulated from the semiconductor layer, wherein the polysilicon of the semiconductor layer includes a grain boundary parallel to a crystallization growing direction, and a surface roughness of the polysilicon semiconductor layer defined by a distance between a lowest peak and a highest peak in a surface thereof is less than about 15 nm.

    摘要翻译: 薄膜晶体管及其制造方法以及包括该薄膜晶体管的显示装置,所述薄膜晶体管包括基板; 基板上的多晶硅半导体层; 以及在所述半导体层和所述基板之间的金属图案,所述金属图案与所述半导体层绝缘,其中所述半导体层的多晶硅包括平行于结晶生长方向的晶界,并且所述多晶硅半导体层的表面粗糙度被限定 在其表面的最低峰和最高峰之间的距离小于约15nm。

    Flat panel display device and method of manufacturing the same
    43.
    发明申请
    Flat panel display device and method of manufacturing the same 有权
    平板显示装置及其制造方法

    公开(公告)号:US20110140107A1

    公开(公告)日:2011-06-16

    申请号:US12923599

    申请日:2010-09-29

    IPC分类号: H01L33/18 H01L21/336

    摘要: A flat panel display device including a substrate including first and second regions; an active layer on the first region of the substrate including a semiconductor material; a lower electrode on the second region of the substrate including the semiconductor material; a first insulating layer on the substrate including the active layer and the lower electrode thereon; a gate electrode on the first insulating layer overlying the active layer and including a first conductive layer pattern and a second conductive layer pattern; an upper electrode on the first insulating layer overlying the lower electrode and including the first conductive layer pattern and the second conductive layer pattern; a second insulating layer on the gate electrode and the upper electrode exposing portions of the active layer and portions of the upper electrode; and a source electrode and a drain electrode connected to the exposed portions of the active layer.

    摘要翻译: 一种平板显示装置,包括:包括第一和第二区域的基板; 在包括半导体材料的衬底的第一区域上的有源层; 在包括半导体材料的基板的第二区域上的下电极; 在其上的包括有源层和下电极的基板上的第一绝缘层; 覆盖有源层的第一绝缘层上的栅电极,包括第一导电层图案和第二导电层图案; 所述第一绝缘层上的上电极覆盖所述下电极并且包括所述第一导电层图案和所述第二导电层图案; 栅电极上的第二绝缘层和暴露有源层的部分和上电极的部分的上电极; 以及连接到有源层的暴露部分的源电极和漏电极。

    FLAT PANEL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    44.
    发明申请
    FLAT PANEL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    平板显示装置及其制造方法

    公开(公告)号:US20110128490A1

    公开(公告)日:2011-06-02

    申请号:US12957246

    申请日:2010-11-30

    摘要: A flat panel display device and a method of manufacturing the flat panel display device are disclosed. In one embodiment, the flat panel display device includes: i) a first substrate, ii) an active layer formed over the first substrate, wherein the active layer comprises a source region, a drain region, and a channel region, iii) a gate insulating layer formed on the active layer, iv) a gate electrode formed on the gate insulating layer and over the channel region of the active layer and v) a first interlayer insulating film formed on the gate insulating layer and the gate electrode. The device may further includes 1) a source electrode and a drain electrode electrically connected to the source region and the drain region of the active layer, respectively, through a contact hole, wherein the contact hole is formed in the first interlayer insulating film and the gate insulating layer, 2) a second interlayer insulating film interposed substantially only between i) the first interlayer insulating film and ii) the source electrode and the drain electrode, 3) a passivation layer formed on the first interlayer insulating film and the source electrode and the drain electrode and 4) a pixel electrode electrically connected to the source electrode or the drain electrode through a via-hole formed in the passivation layer.

    摘要翻译: 公开了一种平板显示装置及其制造方法。 在一个实施例中,平板显示装置包括:i)第一衬底,ii)形成在第一衬底上的有源层,其中有源层包括源极区,漏极区和沟道区,iii)栅极 形成在有源层上的绝缘层,iv)形成在栅极绝缘层上并在有源层的沟道区上方的栅极,以及v)形成在栅极绝缘层和栅电极上的第一层间绝缘膜。 该器件还可以包括:1)源电极和漏极,分别通过接触孔与有源层的源极区域和漏极区域电连接,其中接触孔形成在第一层间绝缘膜和 栅绝缘层,2)基本上仅介于i)第一层间绝缘膜和ii)源电极和漏电极之间的第二层间绝缘膜,3)形成在第一层间绝缘膜和源电极上的钝化层,以及 漏极电极和4)通过形成在钝化层中的通孔电连接到源电极或漏电极的像素电极。

    Organic Light Emitting Display Apparatus and Method of Manufacturing the Same
    45.
    发明申请
    Organic Light Emitting Display Apparatus and Method of Manufacturing the Same 有权
    有机发光显示装置及其制造方法

    公开(公告)号:US20110114956A1

    公开(公告)日:2011-05-19

    申请号:US12943886

    申请日:2010-11-10

    IPC分类号: H01L51/52 H01L51/56

    CPC分类号: H01L51/5215 H01L27/3248

    摘要: An organic light emitting display apparatus and a method of manufacturing the organic light emitting display apparatus, whereby the manufacturing process is simplified and the electric characteristics of the organic light emitting display apparatus are improved. The organic light emitting display apparatus includes: a gate electrode that includes a first conductive layer including ITO, a second conductive layer on the first conductive layer, a third conductive layer on the second conductive layer and including ITO, and a fourth conductive layer on the third conductive layer and including IZO or AZO; and a pixel electrode formed in the same layer level as the gate electrode and including a first electrode layer that includes ITO, a second electrode layer on the first electrode layer, a third electrode layer on the second electrode layer and including ITO, and a fourth electrode layer on the third electrode layer and including IZO or AZO.

    摘要翻译: 一种有机发光显示装置和制造有机发光显示装置的方法,由此简化了制造工艺,并提高了有机发光显示装置的电特性。 有机发光显示装置包括:栅电极,其包括第一导电层,包括ITO,第一导电层上的第二导电层,第二导电层上的第三导电层,包括ITO;以及第四导电层, 第三导电层并且包括IZO或AZO; 和形成为与栅极电极相同的层级的像素电极,并且包括包括ITO的第一电极层,在第一电极层上的第二电极层,在第二电极层上的包括ITO的第三电极层,以及第四电极层 电极层,并且包括IZO或AZO。

    Organic Light Emitting Display Device and Manufacturing Method Thereof
    46.
    发明申请
    Organic Light Emitting Display Device and Manufacturing Method Thereof 有权
    有机发光显示装置及其制造方法

    公开(公告)号:US20110108848A1

    公开(公告)日:2011-05-12

    申请号:US12904672

    申请日:2010-10-14

    IPC分类号: H01L51/52 H01L51/56

    CPC分类号: H01L27/3262 H01L27/3258

    摘要: An organic light emitting display having an active layer of a thin film transistor formed on a substrate, a first conductive layer formed at an edge of the active layer, a first insulation layer formed on the substrate and the first conductive layer, a second conductive layer corresponding to a central area of the active layer formed on the first insulation layer, a fanout lower electrode separated a predetermined distance from the second conductive layer, a pixel electrode, a third conductive layer formed on the second conductive layer, a fanout upper electrode formed on the fanout lower electrode, a second insulation layer formed on the third conductive layer, the fanout upper electrode, and the pixel electrode, and source and drain electrodes contacting the pixel electrode and formed on the second insulation layer.

    摘要翻译: 一种有机发光显示器,其具有形成在基板上的薄膜晶体管的有源层,形成在所述有源层的边缘的第一导电层,形成在所述基板上的第一绝缘层和所述第一导电层,第二导电层 对应于形成在第一绝缘层上的有源层的中心区域,与第二导电层分隔预定距离的扇出下电极,像素电极,形成在第二导电层上的第三导电层,形成的扇出上电极 在扇出的下电极上,形成在第三导电层,扇出上电极和像素电极上的第二绝缘层,以及与第二绝缘层形成的源电极和漏极接触的源极和漏极。

    ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    47.
    发明申请
    ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    有机发光二极管显示装置及其制造方法

    公开(公告)号:US20120074414A1

    公开(公告)日:2012-03-29

    申请号:US13174606

    申请日:2011-06-30

    IPC分类号: H01L33/16 H01L33/08

    摘要: An organic light emitting diode display device and a method of manufacturing the same are disclosed. The organic light emitting diode display device comprises: a substrate; an active layer disposed on the substrate; a first insulating layer disposed on the active layer; a gate electrode disposed on the first insulating layer; a pixel electrode disposed on the first insulating layer; source and drain electrodes electrically insulated from the gate electrode and electrically connected to the active layer; an intermediate layer disposed on the pixel electrode, wherein the intermediate layer comprises an organic emission layer; and an opposite electrode disposed on the intermediate layer, wherein the pixel electrode is connected to the source electrode or the drain electrode, wherein the gate electrode comprises a first conductive layer, a second conductive layer, a third conductive layer, and a fourth conductive layer that are sequentially stacked, and wherein the second and third conductive layers comprises a first oxidation-reduction potential difference therebetween, and the first and third conductive layers comprises a second oxidation-reduction potential difference therebetween, and the first oxidation-reduction potential difference is less than the second oxidation-reduction potential difference.

    摘要翻译: 公开了一种有机发光二极管显示装置及其制造方法。 有机发光二极管显示装置包括:基板; 设置在所述基板上的有源层; 设置在所述有源层上的第一绝缘层; 设置在所述第一绝缘层上的栅电极; 设置在所述第一绝缘层上的像素电极; 源极和漏极电极与栅极电绝缘并电连接到有源层; 设置在所述像素电极上的中间层,其中所述中间层包含有机发射层; 以及设置在所述中间层上的相对电极,其中所述像素电极连接到所述源电极或漏电极,其中所述栅电极包括第一导电层,第二导电层,第三导电层和第四导电层 并且其中所述第二和第三导电层包括其间的第一氧化还原电位差,并且所述第一和第三导电层包括其间的第二氧化还原电位差,并且所述第一氧化还原电位差较小 比第二氧化还原电位差。

    Organic light-emitting display device and method of manufacturing the same
    48.
    发明授权
    Organic light-emitting display device and method of manufacturing the same 有权
    有机发光显示装置及其制造方法

    公开(公告)号:US09064755B2

    公开(公告)日:2015-06-23

    申请号:US13473079

    申请日:2012-05-16

    IPC分类号: H01L29/04 H01L27/12 H01L27/32

    摘要: An organic light-emitting display device having a thin film transistor including an active layer, a gate electrode, a lower gate electrode, an upper gate electrode, an insulating layer covering the gate electrode, source and drain electrodes that are formed on the insulating layer and contact the active layer. An organic light-emitting diode is electrically connected to the thin film transistor and includes a pixel electrode formed at the same layer level as the lower gate electrode, an intermediate layer including an emission layer, and a counter electrode. A lower pad electrode is formed at the same layer level as the lower gate electrode and an upper pad electrode is formed at the same layer level as the upper gate electrode.

    摘要翻译: 一种具有薄膜晶体管的有机发光显示装置,该薄膜晶体管包括有源层,栅电极,下栅电极,上栅电极,覆盖栅电极的绝缘层,形成在绝缘层上的源电极和漏电极 并联系活动层。 有机发光二极管电连接到薄膜晶体管,并且包括形成在与下栅电极相同层级的像素电极,包括发射层的中间层和对电极。 下焊盘电极形成在与下栅电极相同的层级上,并且上焊盘电极形成在与上栅电极相同的层级上。

    Organic light emitting diode display device and method of manufacturing the same
    50.
    发明授权
    Organic light emitting diode display device and method of manufacturing the same 有权
    有机发光二极管显示装置及其制造方法

    公开(公告)号:US08378353B2

    公开(公告)日:2013-02-19

    申请号:US13174606

    申请日:2011-06-30

    IPC分类号: H01L33/16 H01L33/08

    摘要: An organic light emitting diode display device and a method of manufacturing the same are disclosed. The organic light emitting diode display device comprises: a substrate; an active layer disposed on the substrate; a first insulating layer disposed on the active layer; a gate electrode disposed on the first insulating layer; a pixel electrode disposed on the first insulating layer; source and drain electrodes electrically insulated from the gate electrode and electrically connected to the active layer; an intermediate layer disposed on the pixel electrode, wherein the intermediate layer comprises an organic emission layer; and an opposite electrode disposed on the intermediate layer, wherein the pixel electrode is connected to the source electrode or the drain electrode, wherein the gate electrode comprises a first conductive layer, a second conductive layer, a third conductive layer, and a fourth conductive layer that are sequentially stacked, and wherein the second and third conductive layers comprises a first oxidation-reduction potential difference therebetween, and the first and third conductive layers comprises a second oxidation-reduction potential difference therebetween, and the first oxidation-reduction potential difference is less than the second oxidation-reduction potential difference.

    摘要翻译: 公开了一种有机发光二极管显示装置及其制造方法。 有机发光二极管显示装置包括:基板; 设置在所述基板上的有源层; 设置在所述有源层上的第一绝缘层; 设置在所述第一绝缘层上的栅电极; 设置在所述第一绝缘层上的像素电极; 源极和漏极电极与栅极电绝缘并电连接到有源层; 设置在所述像素电极上的中间层,其中所述中间层包含有机发射层; 以及设置在所述中间层上的相对电极,其中所述像素电极连接到所述源电极或漏电极,其中所述栅电极包括第一导电层,第二导电层,第三导电层和第四导电层 并且其中所述第二和第三导电层包括其间的第一氧化还原电位差,并且所述第一和第三导电层包括其间的第二氧化还原电位差,并且所述第一氧化还原电位差较小 比第二氧化还原电位差。