Electrophotographic sensitive member

    公开(公告)号:US4826748A

    公开(公告)日:1989-05-02

    申请号:US82971

    申请日:1987-08-04

    摘要: The present invention relates to an electrophotographic sensitive member for use in a laser line printer.A laser line printer using a laser beam as a recording member has been known for a small-sized, light, low power consumption, high-density and high-speed recording method. For example, a semi-conductor laser printer and an electrophotographic sensitive member mainly formed of amorphous silicon used therein are being watched with interest.However, since this laser beam is monochromatic, a laser beam incident upon the inside of a photosensitive layer is very much inclined to be not sufficiently absorbed by the photosensitive layer to reach an electrically conductive substrate and be reflected at the surface of the electrically conductive substrate.With a photosensitive member having a photosensitive layer laminated on an electrically conductive substrate, there has been a problem in that a part of an incident ray such as a semiconductor laser ray is reflected by the electrically conductive substrate and if a part of this reflected ray is reflected by the surface of the photosensitive layer again, an interference occurs between this twice reflected ray and the incident ray to produce an interference fringe on a charge latent image whereby an interference fringe-like concentration unevenness on the image after developing.The present invention was achieved in order to eliminate the above described problem and it is an object of the present invention to provide an electrophotographic sensitive member, in which a photosensitive layer having at least a photoconductive layer is laminated on an electrically conductive substrate and a laser beam is incident upon a surface side of said photosensitive layer to generate an optical carrier in said photoconductive layer, characterized by that an interference of an laser beam can be reduced to prevent a stripped pattern from generating on an image by forming said photosensitive layer on said electrically conductive substrate through an intermediate layer and selecting a .times.b.sup.2 .times.c of 0.2 or less, wherein a is a transmission factor of said laser beam through said photosensitive layer, b being a transmission factor of said laser beam through said intermediate layer, and c being a reflection factor of said laser beam by said substrate.

    Electrophotographic sensitive member with amorphous Si barrier layer
    42.
    发明授权
    Electrophotographic sensitive member with amorphous Si barrier layer 失效
    具有非晶Si阻挡层的电子照相敏感元件

    公开(公告)号:US4675264A

    公开(公告)日:1987-06-23

    申请号:US885923

    申请日:1986-07-15

    IPC分类号: G03G5/082 G03G5/14

    CPC分类号: G03G5/08242

    摘要: The invention relates to improvements in an electrophotographic sensitive member having a photoconductive layer formed with amorphous silicon produced by glow discharge decomposition or sputtering. An electrophotographic sensitive member is formed by laminating an amorphous silicon barrier layer and an amorphous photoconductive layer successively on an electrically conductive substrate, the first mentioned layer containing an impurity of Group IIIa of Periodic Table of Elements, or nitrogen and impurity of Group IIIa of same Table, and also containing oxygen within a range of 0.1 to 20.0 atomic % at the point of the layer and in a progressively decreasing pattern throughout the rest thereof. Constructed as such, the photosensitive member has an increased photosensitivity to near-infrared beams, a large charge-holding capability, and low-rate dark attenuation characteristics. In addition, it is less expensive to manufacture.

    摘要翻译: 本发明涉及具有由辉光放电分解或溅射产生的非晶硅形成的光电导层的电子照相敏感元件的改进。 通过在导电性基板上依次层叠非晶硅阻隔层和非晶质光电导层而形成电子照相感光体,所述第一层含有元素周期表IIIa族的杂质,或含有相同的IIIa族的氮和杂质 表中,并且在该层的点处还含有0.1至20.0原子%范围内的氧,并且在其余部分中以逐渐递减的图案含有氧。 因此,感光构件对近红外光束具有增加的光敏性,大的电荷保持能力和低速率暗衰减特性。 此外,制造成本较低。

    Amorphous silicon electrophotographic sensitive member
    43.
    发明授权
    Amorphous silicon electrophotographic sensitive member 失效
    非晶硅电子照相敏感元件

    公开(公告)号:US4666808A

    公开(公告)日:1987-05-19

    申请号:US594201

    申请日:1984-03-28

    IPC分类号: G03G5/082 G03G5/14

    CPC分类号: G03G5/08242

    摘要: The invention relates to improvements in an electrophotographic sensitive member having a photoconductive layer formed with amorphous silicon produced by glow discharge decomposition or sputtering. An electrophotographic sensitive member is formed by laminating an amorphous silicon barrier layer and an amorphous photoconductive layer successively on an electrically conductive substrate, the first mentioned layer containing an impurity of Group IIIa of Periodic Table of Elements, or nitrogen and impurity of Group IIIa of same Table, and also containing oxygen within a range of 0.1 to 20.0 atomic % at the point of the layer and in a progressively decreasing pattern throughout the rest thereof. Constructed as such, the photosensitive member has an increased photosensitivity to near-infrared beams, a large charge-holding capability, and low-rate dark attenuation characteristics. In addition, it is less expensive to manufacture.

    摘要翻译: 本发明涉及具有由辉光放电分解或溅射产生的非晶硅形成的光电导层的电子照相敏感元件的改进。 通过在导电性基板上依次层叠非晶硅阻隔层和非晶质光电导层而形成电子照相感光体,所述第一层含有元素周期表IIIa族的杂质,或含有相同的IIIa族的氮和杂质 表中,并且在该层的点处还含有0.1至20.0原子%范围内的氧,并且在其余部分中以逐渐递减的图案含有氧。 因此,感光构件对近红外光束具有增加的光敏性,大的电荷保持能力和低速率暗衰减特性。 此外,制造成本较低。

    Electrophotographic amorphous silicon member
    44.
    发明授权
    Electrophotographic amorphous silicon member 失效
    电子照相非晶硅材料

    公开(公告)号:US4489149A

    公开(公告)日:1984-12-18

    申请号:US562733

    申请日:1983-12-19

    IPC分类号: G03G5/082

    CPC分类号: G03G5/08221

    摘要: The invention disclosed relates to an electrophotographic sensitive member having a photoconductive layer of amorphous silicon. The photoconductive layer is preferably formed by the glow discharge process and includes about 10.sup.-5 to 5.times.10.sup.-2 atomic % of oxygen, about 10 to 40 atomic % of hydrogen and about 10 to 20000 ppm of a Group IIIb impurity of the Periodic Table. A barrier layer of amorphous silicon having a thickness of about 0.2 to 5 microns and containing about 0.05 to 1 atomic % of oxygen may also be formed between a substrate and said photoconductive layer.

    摘要翻译: 所公开的发明涉及具有非晶硅光电导层的电子照相敏感元件。 光电导层优选通过辉光放电处理形成,并且包括约10-5至5×10-2原子%的氧,约10至40原子%的氢和约10至20000ppm的元素周期表的第IIIb族杂质。 也可以在衬底和所述光电导层之间形成厚度为约0.2至5微米并且含有约0.05至1原子%的氧的非晶硅的阻挡层。

    Photosensitive member
    45.
    发明授权
    Photosensitive member 失效
    感光成员

    公开(公告)号:US4451546A

    公开(公告)日:1984-05-29

    申请号:US473004

    申请日:1983-03-07

    CPC分类号: G03G5/08235 G03G5/08

    摘要: The invention disclosed relates to a photosensitive member having excellent photosensitivity characteristics in the visible light region as well as in the near infrared region. The photosensitive member according to the invention comprises an electrically-conductive substrate, an amorphous silicon semiconductor layer, an amorphous silicon-germanium photoconductive layer formed on the semiconductor layer, and an amorphous silicon photoconductive layer formed the amorphous silicon-germanium photoconductive layer.

    摘要翻译: 所公开的本发明涉及在可见光区域和近红外区域中具有优异的光敏特性的感光构件。 根据本发明的感光构件包括导电衬底,非晶硅半导体层,形成在半导体层上的非晶硅 - 锗光电导层和形成非晶硅 - 锗光电导层的非晶硅光电导层。

    Manufacturing method of acoustic sensor
    47.
    发明授权
    Manufacturing method of acoustic sensor 失效
    声传感器制造方法

    公开(公告)号:US07204009B2

    公开(公告)日:2007-04-17

    申请号:US11185775

    申请日:2005-07-21

    IPC分类号: H04R31/00

    摘要: The present invention relates to a semiconductor electret condenser microphone capable of being reduced in size and including an acoustic sensor 100 and a case 200 for accommodating the acoustic sensor 100, the acoustic sensor 100 has a semiconductor chip 110 forming necessary electronic circuits 111A to 111C, and opening a through hole 112 away from the electronic circuits 111A to 111C, an electrode layer 120 formed on the surface of the semiconductor chip 110 away from the through hole 112, an electret member 130 laminated away from part of the electrode layer 120 and through hole 112, and a diaphragm 140 provided with a spacing 160 to the electret member 130, in which the electrode layer 120 exposed from the electret member 130 is connected to the electrode 111a of the electronic circuit 111A through the case 200 (FIG. 6).

    摘要翻译: 本发明涉及能够减小尺寸的半导体驻极体电容麦克风,包括用于容纳声传感器100的声传感器100和壳体200,声传感器100具有形成必要的电子电路111A至111的半导体芯片110 C,并且从电子电路111A至111C离开通孔112,形成在半导体芯片110的远离通孔112的表面上的电极层120,与电极的一部分层叠的驻极体部件130 层120和通孔112以及设置有与驻极体构件130间隔160的隔膜140,其中从驻极体构件130露出的电极层120通过壳体连接到电子电路111A的电极111a 200(图6)。

    Manufacturing method of acoustic sensor
    48.
    发明授权
    Manufacturing method of acoustic sensor 失效
    声传感器制造方法

    公开(公告)号:US07080442B2

    公开(公告)日:2006-07-25

    申请号:US10274198

    申请日:2002-10-21

    IPC分类号: H04R31/00

    摘要: The present invention relates to a semiconductor electret condenser microphone capable of being reduced in size and including an acoustic sensor 100 and a case 200 for accommodating the acoustic sensor 100, the acoustic sensor 100 has a semiconductor chip 110 forming necessary electronic circuits 111A to 111C, and opening a through hole 112 away from the electronic circuits 111A to 111C, an electrode layer 120 formed on the surface of the semiconductor chip 110 away from the through hole 112, an electret member 130 laminated away from part of the electrode layer 120 and through hole 112, and a diaphragm 140 provided with a spacing 160 to the electret member 130, in which the electrode layer 120 exposed from the electret member 130 is connected to the electrode 111a of the electronic circuit 111A through the case 200 (FIG. 6).

    摘要翻译: 本发明涉及能够减小尺寸的半导体驻极体电容麦克风,包括用于容纳声传感器100的声传感器100和壳体200,声传感器100具有形成必要的电子电路111A至111的半导体芯片110 C,并且从电子电路111A至111C离开通孔112,形成在半导体芯片110的远离通孔112的表面上的电极层120,与电极的一部分层叠的驻极体部件130 层120和通孔112以及设置有与驻极体构件130间隔160的隔膜140,其中从驻极体构件130露出的电极层120通过壳体连接到电子电路111A的电极111a 200(图6)。