Manufacturing method of acoustic sensor
    1.
    发明申请
    Manufacturing method of acoustic sensor 失效
    声传感器制造方法

    公开(公告)号:US20050251995A1

    公开(公告)日:2005-11-17

    申请号:US11185775

    申请日:2005-07-21

    摘要: The present invention relates to a semiconductor electret condenser microphone capable of being reduced in size and including an acoustic sensor 100 and a case 200 for accommodating the acoustic sensor 100, the acoustic sensor 100 has a semiconductor chip 110 forming necessary electronic circuits 111A to 111C, and opening a through hole 112 away from the electronic circuits 111A to 111C, an electrode layer 120 formed on the surface of the semiconductor chip 110 away from the through hole 112, an electret member 130 laminated away from part of the electrode layer 120 and through hole 112, and a diaphragm 140 provided with a spacing 160 to the electret member 130, in which the electrode layer 120 exposed from the electret member 130 is connected to the electrode 111a of the electronic circuit 111A through the case 200 (FIG. 6).

    摘要翻译: 本发明涉及能够减小尺寸的半导体驻极体电容麦克风,包括用于容纳声传感器100的声传感器100和壳体200,声传感器100具有形成必要的电子电路111A至111的半导体芯片110 C,并且从电子电路111A至111C离开通孔112,形成在半导体芯片110的远离通孔112的表面上的电极层120,与电极的一部分层叠的驻极体部件130 层120和通孔112以及设置有与驻极体构件130间隔160的隔膜140,其中从驻极体构件130露出的电极层120通过壳体连接到电子电路111A的电极111a 200(图6)。

    Manufacturing method of acoustic sensor
    2.
    发明授权
    Manufacturing method of acoustic sensor 失效
    声传感器制造方法

    公开(公告)号:US07204009B2

    公开(公告)日:2007-04-17

    申请号:US11185775

    申请日:2005-07-21

    IPC分类号: H04R31/00

    摘要: The present invention relates to a semiconductor electret condenser microphone capable of being reduced in size and including an acoustic sensor 100 and a case 200 for accommodating the acoustic sensor 100, the acoustic sensor 100 has a semiconductor chip 110 forming necessary electronic circuits 111A to 111C, and opening a through hole 112 away from the electronic circuits 111A to 111C, an electrode layer 120 formed on the surface of the semiconductor chip 110 away from the through hole 112, an electret member 130 laminated away from part of the electrode layer 120 and through hole 112, and a diaphragm 140 provided with a spacing 160 to the electret member 130, in which the electrode layer 120 exposed from the electret member 130 is connected to the electrode 111a of the electronic circuit 111A through the case 200 (FIG. 6).

    摘要翻译: 本发明涉及能够减小尺寸的半导体驻极体电容麦克风,包括用于容纳声传感器100的声传感器100和壳体200,声传感器100具有形成必要的电子电路111A至111的半导体芯片110 C,并且从电子电路111A至111C离开通孔112,形成在半导体芯片110的远离通孔112的表面上的电极层120,与电极的一部分层叠的驻极体部件130 层120和通孔112以及设置有与驻极体构件130间隔160的隔膜140,其中从驻极体构件130露出的电极层120通过壳体连接到电子电路111A的电极111a 200(图6)。

    Manufacturing method of acoustic sensor
    3.
    发明授权
    Manufacturing method of acoustic sensor 失效
    声传感器制造方法

    公开(公告)号:US07080442B2

    公开(公告)日:2006-07-25

    申请号:US10274198

    申请日:2002-10-21

    IPC分类号: H04R31/00

    摘要: The present invention relates to a semiconductor electret condenser microphone capable of being reduced in size and including an acoustic sensor 100 and a case 200 for accommodating the acoustic sensor 100, the acoustic sensor 100 has a semiconductor chip 110 forming necessary electronic circuits 111A to 111C, and opening a through hole 112 away from the electronic circuits 111A to 111C, an electrode layer 120 formed on the surface of the semiconductor chip 110 away from the through hole 112, an electret member 130 laminated away from part of the electrode layer 120 and through hole 112, and a diaphragm 140 provided with a spacing 160 to the electret member 130, in which the electrode layer 120 exposed from the electret member 130 is connected to the electrode 111a of the electronic circuit 111A through the case 200 (FIG. 6).

    摘要翻译: 本发明涉及能够减小尺寸的半导体驻极体电容麦克风,包括用于容纳声传感器100的声传感器100和壳体200,声传感器100具有形成必要的电子电路111A至111的半导体芯片110 C,并且从电子电路111A至111C离开通孔112,形成在半导体芯片110的远离通孔112的表面上的电极层120,与电极的一部分层叠的驻极体部件130 层120和通孔112以及设置有与驻极体构件130间隔160的隔膜140,其中从驻极体构件130露出的电极层120通过壳体连接到电子电路111A的电极111a 200(图6)。

    Semiconductor device
    5.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US06566728B1

    公开(公告)日:2003-05-20

    申请号:US09678555

    申请日:2000-10-04

    IPC分类号: H01L2900

    CPC分类号: H04R19/005 H04R19/04

    摘要: First, a stationary electrode layer is formed over a semiconductor substrate and an integrated network is composed in a circuit element area around the stationary electrode layer by electrode wiring forming each circuit element. A spacer is arranged on a passivation film in plural places. A dummy island is formed in an area between the circuit element area and the stationary electrode layer area. Supply potential Vcc is applied to the dummy island and ground potential GND is applied to a P+-type separated area.

    摘要翻译: 首先,在半导体衬底上形成固定电极层,并且通过形成每个电路元件的电极布线,在固定电极层周围的电路元件区域中形成集成网络。 在多个位置上在隔离膜上设置间隔物。 在电路元件区域和固定电极层区域之间的区域中形成虚设的岛。 将供电电位Vcc施加到虚拟岛,将接地电位GND施加到P +型分离区域。

    Sound detecting mechanism
    8.
    发明授权
    Sound detecting mechanism 失效
    声音检测机构

    公开(公告)号:US07570773B2

    公开(公告)日:2009-08-04

    申请号:US10565059

    申请日:2004-07-14

    IPC分类号: H04R25/00

    CPC分类号: H04R19/016 H04R19/04

    摘要: A sound detecting mechanism capable of forming a diaphragm and a back electrode on a substrate by a simple process includes acoustic holes corresponding to perforations formed on a front surface of a substrate. A second protective film, a sacrificial layer and a metal film are laminated on the front surface in a portion corresponding to the acoustic holes. The substrate is etched from the back surface thereof to a depth reaching the acoustic holes to form an acoustic opening. Subsequently, by effecting an etching from the back surface of the substrate through the acoustic holes, the sacrificial layer is removed and a void area is formed between the diaphragm made of the metal film, the substrate and the formed perforations. The sacrificial layer that remains after the etching is used as a spacer for maintaining a gap between the back electrode and the diaphragm.

    摘要翻译: 能够通过简单的工艺在基板上形成隔膜和背面电极的声音检测机构包括对应于形成在基板前表面上的穿孔的声孔。 第二保护膜,牺牲层和金属膜层叠在与声孔对应的部分的前表面上。 衬底从其后表面被蚀刻到到达声孔的深度以形成声学开口。 随后,通过通过声孔从衬底的背面进行蚀刻,除去牺牲层,并且在由金属膜,衬底和形成的穿孔构成的隔膜之间形成空隙区域。 蚀刻后残留的牺牲层用作用于保持背电极和隔膜之间的间隙的间隔物。