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218 条记录 (耗时 0.025 秒)

    MAGNETIC FIELD ASSISTED STRAM CELLS
    41.
    发明申请
    MAGNETIC FIELD ASSISTED STRAM CELLS 失效
    磁场辅助细胞

    公开(公告)号：US20120250405A1

    公开(公告)日：2012-10-04

    申请号：US13491891

    申请日：2012-06-08

    申请人： Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

    发明人： Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

    IPC分类号： G11C11/16 ,  G11C11/14

    CPC分类号： G11C11/1675 ,  G11C11/1659

    摘要： Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.

    摘要翻译： 具有磁隧道结电池的存储单元，其利用自旋转矩和电流感应磁场来辅助磁性隧道结电池自由层的磁化取向的切换。 存储单元包括用于使电流通过磁性隧道结单元的自旋转矩电流源，该自旋转矩电流源具有与磁化方位垂直的方向，并且还包括磁安培励磁电流源在正交或 与磁化方向成一定角度。

    MAGNETIC FIELD ASSISTED STRAM CELLS
    42.
    发明申请
    MAGNETIC FIELD ASSISTED STRAM CELLS 有权
    磁场辅助STRAM细胞

    公开(公告)号：US20100034008A1

    公开(公告)日：2010-02-11

    申请号：US12199126

    申请日：2008-08-27

    申请人： Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

    发明人： Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

    IPC分类号： G11C11/22

    CPC分类号： G11C11/1675 ,  G11C11/1659

    摘要： Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.

    摘要翻译： 具有磁隧道结电池的存储单元，其利用自旋转矩和电流感应磁场来辅助磁性隧道结电池自由层的磁化取向的切换。 存储单元包括用于使电流通过磁性隧道结单元的自旋转矩电流源，该自旋转矩电流源具有与磁化方位垂直的方向，并且还包括磁安培励磁电流源在正交或 与磁化方向成一定角度。

    Magnetic memory element with multi-domain storage layer
    43.
    发明授权
    Magnetic memory element with multi-domain storage layer 有权
    具有多域存储层的磁记忆元件

    公开(公告)号：US08482967B2

    公开(公告)日：2013-07-09

    申请号：US12938424

    申请日：2010-11-03

    申请人： Haiwen Xi ,  Yuankai Zheng ,  Xiaobin Wang ,  Dimitar V. Dimitrov ,  Pat J. Ryan

    发明人： Haiwen Xi ,  Yuankai Zheng ,  Xiaobin Wang ,  Dimitar V. Dimitrov ,  Pat J. Ryan

    IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/15

    CPC分类号： H01L43/02 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/228

    摘要： An apparatus and method for enhancing data writing and retention to a magnetic memory element, such as in a non-volatile data storage array. In accordance with various embodiments, a programmable memory element has a reference layer and a storage layer. The reference layer is provided with a fixed magnetic orientation. The storage layer is programmed to have a first region with a magnetic orientation antiparallel to said fixed magnetic orientation, and a second region with a magnetic orientation parallel to said fixed magnetic orientation. A thermal assist layer may be incorporated into the memory element to enhance localized heating of the storage layer to aid in the transition of the first region from parallel to antiparallel magnetic orientation during a write operation.

    摘要翻译： 一种用于增强对诸如非易失性数据存储阵列中的磁存储元件的数据写入和保持的装置和方法。 根据各种实施例，可编程存储元件具有参考层和存储层。 参考层具有固定的磁性取向。 存储层被编程为具有与所述固定磁性取向反平行的磁性取向的第一区域和具有与所述固定磁性取向平行的磁性取向的第二区域。 可以将热辅助层结合到存储元件中以增强存储层的局部加热，以帮助在写入操作期间第一区域从平行转变为反平行磁取向。

    Magnetic Memory Element With Multi-Domain Storage Layer
    46.
    发明申请
    Magnetic Memory Element With Multi-Domain Storage Layer 有权
    具有多域存储层的磁记忆元件

    公开(公告)号：US20120106239A1

    公开(公告)日：2012-05-03

    申请号：US12938424

    申请日：2010-11-03

    申请人： Haiwen Xi ,  Yuankai Zheng ,  Xiaobin Wang ,  Dimitar V. Dimitrov ,  Pat J. Ryan

    发明人： Haiwen Xi ,  Yuankai Zheng ,  Xiaobin Wang ,  Dimitar V. Dimitrov ,  Pat J. Ryan

    IPC分类号： G11C11/15 ,  H01L29/82

    CPC分类号： H01L43/02 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/228

    摘要： An apparatus and method for enhancing data writing and retention to a magnetic memory element, such as in a non-volatile data storage array. In accordance with various embodiments, a programmable memory element has a reference layer and a storage layer. The reference layer is provided with a fixed magnetic orientation. The storage layer is programmed to have a first region with a magnetic orientation antiparallel to said fixed magnetic orientation, and a second region with a magnetic orientation parallel to said fixed magnetic orientation. A thermal assist layer may be incorporated into the memory element to enhance localized heating of the storage layer to aid in the transition of the first region from parallel to antiparallel magnetic orientation during a write operation.

    摘要翻译： 一种用于增强对诸如非易失性数据存储阵列中的磁存储元件的数据写入和保持的装置和方法。 根据各种实施例，可编程存储元件具有参考层和存储层。 参考层具有固定的磁性取向。 存储层被编程为具有与所述固定磁性取向反平行的磁性取向的第一区域和具有与所述固定磁性取向平行的磁性取向的第二区域。 可以将热辅助层结合到存储元件中以增强存储层的局部加热，以帮助在写入操作期间第一区域从平行转变为反平行磁取向。

    MAGNETIC SHIFT REGISTER AS COUNTER AND DATA STORAGE DEVICE
    48.
    发明申请
    MAGNETIC SHIFT REGISTER AS COUNTER AND DATA STORAGE DEVICE 有权
    磁性移位寄存器作为计数器和数据存储设备

    公开(公告)号：US20100073984A1

    公开(公告)日：2010-03-25

    申请号：US12233760

    申请日：2008-09-19

    申请人： Haiwen Xi ,  Dimitar V. Dimitrov ,  Andreas Roelofs ,  Xiaobin Wang ,  Paul E. Anderson ,  Hongyue Liu

    发明人： Haiwen Xi ,  Dimitar V. Dimitrov ,  Andreas Roelofs ,  Xiaobin Wang ,  Paul E. Anderson ,  Hongyue Liu

    IPC分类号： G11C19/00

    CPC分类号： G11C19/0841 ,  G11C11/14

    摘要： A register having a track with a first electrode is at the first end to supply a current to the track in a first direction and a second electrode at the second end to supply a current to the track in a second direction, the second direction being opposite to the first direction. A first domain wall anchor and a second domain wall anchor are positioned proximate the track between the first electrode and the second electrode. Each of the domain wall anchors has a ferromagnetic pinned layer and a barrier layer proximate the track, with the barrier layer between the track and the ferromagnetic pinned layer. The ferromagnetic layer has a magnetization orientation pinned perpendicular to the magnetization orientation of the track.

    摘要翻译： 具有带有第一电极的轨道的寄存器处于第一端，以沿第一方向向轨道提供电流，而第二端处的第二电极在第二方向上向轨道提供电流，第二方向相反 到第一个方向。 第一结构域壁锚和第二结构域锚固件位于第一电极和第二电极之间的轨道附近。 每个畴壁锚固件具有铁磁钉扎层和靠近轨道的阻挡层，阻挡层在轨道和铁磁性钉扎层之间。 铁磁层具有垂直于轨道的磁化取向钉扎的磁化取向。

    Magnetic shift register as counter and data storage device
    50.
    发明授权
    Magnetic shift register as counter and data storage device 有权
    磁移寄存器作为计数器和数据存储设备

    公开(公告)号：US07876595B2

    公开(公告)日：2011-01-25

    申请号：US12233760

    申请日：2008-09-19

    申请人： Haiwen Xi ,  Dimitar V. Dimitrov ,  Andreas Roelofs ,  Xiaobin Wang ,  Paul E Anderson ,  Hongyue Liu

    发明人： Haiwen Xi ,  Dimitar V. Dimitrov ,  Andreas Roelofs ,  Xiaobin Wang ,  Paul E Anderson ,  Hongyue Liu

    IPC分类号： G11C19/00

    CPC分类号： G11C19/0841 ,  G11C11/14

    摘要： A register having a track with a first electrode is at the first end to supply a current to the track in a first direction and a second electrode at the second end to supply a current to the track in a second direction, the second direction being opposite to the first direction. A first domain wall anchor and a second domain wall anchor are positioned proximate the track between the first electrode and the second electrode. Each of the domain wall anchors has a ferromagnetic pinned layer and a barrier layer proximate the track, with the barrier layer between the track and the ferromagnetic pinned layer. The ferromagnetic layer has a magnetization orientation pinned perpendicular to the magnetization orientation of the track.

    摘要翻译： 具有带有第一电极的轨道的寄存器处于第一端，以沿第一方向向轨道提供电流，而第二端处的第二电极在第二方向上向轨道提供电流，第二方向相反 到第一个方向。 第一结构域壁锚和第二结构域锚固件位于第一电极和第二电极之间的轨道附近。 每个畴壁锚固件具有铁磁钉扎层和靠近轨道的阻挡层，阻挡层在轨道和铁磁性钉扎层之间。 铁磁层具有垂直于轨道的磁化取向钉扎的磁化取向。