公开(公告)号：US06998695B2

公开(公告)日：2006-02-14

申请号：US10649643

申请日：2003-08-28

申请人： Kozo Makiyama ,  Tsuyoshi Takahashi ,  Masahiro Nishi

发明人： Kozo Makiyama ,  Tsuyoshi Takahashi ,  Masahiro Nishi

IPC分类号： H01L29/00

CPC分类号： H01L29/66462 ,  H01L21/28587 ,  H01L29/42316

摘要： A method of manufacturing a semiconductor device has the steps of: forming a mushroom gate traversing an active region of a semiconductor substrate and having a fine gate and an expanded over gate formed thereon; coating a first organic material film on the semiconductor substrate; patterning the first organic material film and leaving the first organic material film only near the mushroom gate; coating a second organic (insulating) material film covering the left first organic material film; forming an opening through the second organic material film to expose the first organic material film; and dissolving and removing the first organic material film via the opening to form a hollow space in the second organic material film.

摘要翻译： 一种半导体器件的制造方法，其特征在于：形成穿过半导体衬底的有源区并形成有精细栅极和扩展栅极的蘑菇栅极; 在半导体衬底上涂覆第一有机材料膜; 图案化第一有机材料膜并仅在蘑菇门附近留下第一有机材料膜; 涂覆覆盖左第一有机材料膜的第二有机（绝缘）材料膜; 通过所述第二有机材料膜形成开口以暴露所述第一有机材料膜; 并且经由所述开口溶解并除去所述第一有机材料膜，以在所述第二有机材料膜中形成中空空间。

公开(公告)号：US20050159009A1

公开(公告)日：2005-07-21

申请号：US11062588

申请日：2005-02-23

申请人： Kozo Makiyama ,  Koji Nozaki

发明人： Kozo Makiyama ,  Koji Nozaki

IPC分类号： H01L21/027 ,  H01L21/28 ,  H01L29/423 ,  H01L21/302 ,  H01L21/44 ,  H01L21/461

CPC分类号： H01L21/28 ,  H01L21/0277 ,  H01L29/42316 ,  Y10S438/95

摘要： The present invention provides a method of manufacturing a gate electrode in which a fine gate electrode can effectively be manufactured by thickening a resist opening for gate electrodes formed by ordinary electron beam lithography so as to reduce opening dimensions. The method of manufacturing a gate electrode of the present invention includes a step of forming a laminated resist including at least an electron beam resist layer as a lowermost layer on a surface where a gate electrode is to be formed; a step of forming an opening in layer(s) other than the lowermost layer; a step of forming a gate electrode opening on the lowermost layer exposed from the opening; a step of reducing the gate electrode opening selectively; and a step of forming a gate electrode in the gate electrode opening.

摘要翻译： 本发明提供一种制造栅电极的方法，其中可以通过增厚通过普通电子束光刻形成的栅电极的抗蚀剂开口来有效地制造精细栅电极，从而减小开口尺寸。 本发明的制造栅极的方法包括在要形成栅电极的表面上形成至少包含电子束阻挡层作为最下层的层压抗蚀剂的步骤; 在除了最下层之外的层中形成开口的步骤; 在从开口露出的最下层形成栅电极开口的步骤; 选择性地减小栅极电极开口的步骤; 以及在栅电极开口中形成栅电极的步骤。

公开(公告)号：US09035353B2

公开(公告)日：2015-05-19

申请号：US13567246

申请日：2012-08-06

申请人： Toshihiro Ohki ,  Naoya Okamoto ,  Yuichi Minoura ,  Kozo Makiyama ,  Shirou Ozaki

发明人： Toshihiro Ohki ,  Naoya Okamoto ,  Yuichi Minoura ,  Kozo Makiyama ,  Shirou Ozaki

IPC分类号： H01L29/66 ,  H01L21/00 ,  H01L29/778 ,  H01L29/20

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/66462

摘要： A HEMT has a compound semiconductor layer, a protection film which has an opening and covers an upper side of the compound semiconductor layer, and a gate electrode which fills the opening and has a shape riding on the compound semiconductor layer, wherein the protection film has a stacked structure of a lower insulating film not containing oxygen and an upper insulating film containing oxygen, and the opening includes a first opening formed in the lower insulating film and a second opening formed in the upper insulating film and wider than the first opening, the first opening and the second opening communicating with each other.

摘要翻译： HEMT具有化合物半导体层，具有开口并覆盖化合物半导体层的上侧的保护膜和填充开口并具有骑在化合物半导体层上的形状的栅电极，其中保护膜具有 不含氧的下绝缘膜和含有氧的上绝缘膜的堆叠结构，并且所述开口包括形成在所述下绝缘膜中的第一开口和形成在所述上绝缘膜中并且比所述第一开口更宽的第二开口， 第一开口和第二开口相互通信。

公开(公告)号：US08709886B2

公开(公告)日：2014-04-29

申请号：US13555420

申请日：2012-07-23

申请人： Kozo Makiyama ,  Naoya Okamoto ,  Toshihiro Ohki ,  Yuichi Minoura ,  Shirou Ozaki ,  Toyoo Miyajima

发明人： Kozo Makiyama ,  Naoya Okamoto ,  Toshihiro Ohki ,  Yuichi Minoura ,  Shirou Ozaki ,  Toyoo Miyajima

IPC分类号： H01L21/338

CPC分类号： H01L29/408 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7786 ,  H01L29/7787 ,  H02M7/537

摘要： An HEMT includes, on an SiC substrate, a compound semiconductor layer, a silicon nitride (SiN) protective film having an opening and covering the compound semiconductor layer, and a gate electrode formed on the compound semiconductor layer so as to plug the opening. In the protective film, a projecting portion projecting from a side surface of the opening is formed at a lower layer portion 6a.

摘要翻译： HEMT在SiC衬底上包括化合物半导体层，具有开口并覆盖化合物半导体层的氮化硅（SiN）保护膜和形成在化合物半导体层上的栅电极以堵塞开口。 在保护膜中，从开口侧面突出的突出部形成在下层部6a。

公开(公告)号：US08587092B2

公开(公告)日：2013-11-19

申请号：US12071093

申请日：2008-02-15

申请人： Kozo Makiyama

发明人： Kozo Makiyama

IPC分类号： H01L23/58 ,  H01L21/318

CPC分类号： H01L21/0217 ,  C23C16/345 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/3185 ,  H01L29/2003 ,  H01L29/7787

摘要： A protective insulation film covering a surface of a compound semiconductor region is formed to have a two-layer structure of a first insulation film and a second insulation film which have different properties. The first insulation film is a non-stoichiometric silicon nitride film while the second insulation film is a silicon nitride film in an almost stoichiometric state.

公开(公告)号：US20130082400A1

公开(公告)日：2013-04-04

申请号：US13567246

申请日：2012-08-06

申请人： Toshihiro Ohki ,  Naoya Okamoto ,  Yuichi Minoura ,  Kozo Makiyama ,  Shirou Ozaki

发明人： Toshihiro Ohki ,  Naoya Okamoto ,  Yuichi Minoura ,  Kozo Makiyama ,  Shirou Ozaki

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/66462

摘要： A HEMT has a compound semiconductor layer, a protection film which has an opening and covers an upper side of the compound semiconductor layer, and a gate electrode which fills the opening and has a shape riding on the compound semiconductor layer, wherein the protection film has a stacked structure of a lower insulating film not containing oxygen and an upper insulating film containing oxygen, and the opening includes a first opening formed in the lower insulating film and a second opening formed in the upper insulating film and wider than the first opening, the first opening and the second opening communicating with each other.

摘要翻译： HEMT具有化合物半导体层，具有开口并覆盖化合物半导体层的上侧的保护膜和填充开口并具有骑在化合物半导体层上的形状的栅电极，其中保护膜具有 不含氧的下绝缘膜和含有氧的上绝缘膜的堆叠结构，并且所述开口包括形成在所述下绝缘膜中的第一开口和形成在所述上绝缘膜中并且比所述第一开口更宽的第二开口， 第一开口和第二开口相互通信。

公开(公告)号：US08227838B2

公开(公告)日：2012-07-24

申请号：US13099522

申请日：2011-05-03

申请人： Kozo Makiyama

发明人： Kozo Makiyama

IPC分类号： H01L29/80 ,  H01L31/112

CPC分类号： H01L21/3185 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787

摘要： A semiconductor device includes a substrate, a compound semiconductor layer formed over the substrate, and a protective insulating film composed of silicon nitride, which is formed over a surface of the compound semiconductor layer and whose film density in an intermediate portion is lower than that in a lower portion.

公开(公告)号：US20120032188A1

公开(公告)日：2012-02-09

申请号：US13276830

申请日：2011-10-19

申请人： Masahito Kanamura ,  Kozo Makiyama

发明人： Masahito Kanamura ,  Kozo Makiyama

IPC分类号： H01L29/778 ,  H01L21/335

CPC分类号： H01L21/263 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/3228 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7787

摘要： Two layers of protection films are formed such that a sheet resistance at a portion directly below the protection film is higher than that at a portion directly below the protection film. The protection films are formed, for example, of SiN film, as insulating films. The protection film is formed to be higher, for instance, in hydrogen concentration than the protection film so that the protection film is higher in refractive index the protection film. The protection film is formed to cover a gate electrode and extend to the vicinity of the gate electrode on an electron supplying layer. The protection film is formed on the entire surface to cover the protection film. According to this configuration, the gate leakage is significantly reduced by a relatively simple configuration to realize a highly-reliable compound semiconductor device achieving high voltage operation, high withstand voltage, and high output.

摘要翻译： 形成两层保护膜，使得保护膜正下方的薄层电阻高于保护膜正下方的薄层电阻。 作为绝缘膜，保护膜例如由SiN膜形成。 保护膜形成为比保护膜高的氢浓度，使保护膜的折射率高于保护膜。 保护膜形成为覆盖栅电极并延伸到电子供给层上的栅电极附近。 保护膜形成在整个表面上以覆盖保护膜。 根据该结构，通过相对简单的结构，可以显着降低栅极泄漏，以实现实现高电压操作，高耐压和高输出的高可靠性化合物半导体器件。

公开(公告)号：US07960763B2

公开(公告)日：2011-06-14

申请号：US12186872

申请日：2008-08-06

申请人： Kozo Makiyama

发明人： Kozo Makiyama

IPC分类号： H01L29/80 ,  H01L31/112

CPC分类号： H01L21/3185 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787

摘要： A semiconductor device includes a substrate, a compound semiconductor layer formed over the substrate, and a protective insulating film composed of silicon nitride, which is formed over a surface of the compound semiconductor layer and whose film density in an intermediate portion is lower than that in a lower portion.

摘要翻译： 半导体器件包括衬底，形成在衬底上的化合物半导体层和由氮化硅组成的保护绝缘膜，其形成在化合物半导体层的表面上，其中间部分的膜密度低于 下部。

公开(公告)号：US20110127545A1

公开(公告)日：2011-06-02

申请号：US13023146

申请日：2011-02-08

申请人： Kozo Makiyama ,  Tsuyoshi Takahashi

发明人： Kozo Makiyama ,  Tsuyoshi Takahashi

IPC分类号： H01L29/161 ,  H01L29/78

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42316 ,  H01L29/66431

摘要： A compound semiconductor device includes a compound semiconductor substrate; epitaxially grown layers formed over the compound semiconductor substrate and including a channel layer and a resistance lowering cap layer above the channel layer; source and drain electrodes in ohmic contact with the channel layer; recess formed by removing the cap layer between the source and drain electrodes; a first insulating film formed on an upper surface of the cap layer and having side edges at positions retracted from edges, or at same positions as the edges of the cap layer in a direction of departing from the recess; a second insulating film having gate electrode opening and formed covering a semiconductor surface in the recess and the first insulating film; and a gate electrode formed on the recess via the gate electrode opening.

摘要翻译： 化合物半导体器件包括化合物半导体衬底; 在化合物半导体衬底上形成的外延生长层，并且在沟道层上方包括沟道层和电阻降低覆盖层; 源极和漏极与沟道层欧姆接触; 通过去除源极和漏极之间的覆盖层形成的凹陷; 第一绝缘膜，其形成在所述盖层的上表面上，并且在从所述盖层的边缘离开所述凹部的边缘处或与所述盖层的边缘相同的位置处具有侧边缘; 第二绝缘膜，具有栅极电极开口并形成为覆盖所述凹部中的半导体表面和所述第一绝缘膜; 以及通过栅极电极开口形成在凹部上的栅电极。