PIXEL STRUCTURE AND METHOD FOR MANUFACTURING THEREOF
    41.
    发明申请
    PIXEL STRUCTURE AND METHOD FOR MANUFACTURING THEREOF 有权
    像素结构及其制造方法

    公开(公告)号:US20080129664A1

    公开(公告)日:2008-06-05

    申请号:US11740937

    申请日:2007-04-27

    Abstract: A pixel structure including a scan line, a data line, an active device, a shielding electrode, and a pixel electrode is provided on a substrate. The data line includes an upper conductive wire and a bottom conductive wire. The upper conductive wire is disposed over and across the scan line. The bottom conductive wire is electrically connected to the upper conductive wire. The active device is electrically connected to the scan line and the upper conductive wire. The shielding electrode is disposed over the bottom conductive wire. The pixel electrode disposed over the shielding electrode is electrically connected to the active device. In addition, parts of the pixel electrode and parts of the shielding electrode form a storage capacitor.

    Abstract translation: 在基板上设置包括扫描线,数据线,有源器件,屏蔽电极和像素电极的像素结构。 数据线包括上导线和底导线。 上导线设置在扫描线上方并穿过扫描线。 底部导线与上导电线电连接。 有源器件电连接到扫描线和上导电线。 屏蔽电极设置在底部导线上。 设置在屏蔽电极上方的像素电极与有源器件电连接。 此外,像素电极的一部分和屏蔽电极的一部分形成存储电容器。

    Copper gate electrode of liquid crystal display device and method of fabricating the same
    44.
    发明申请
    Copper gate electrode of liquid crystal display device and method of fabricating the same 有权
    液晶显示装置的铜栅电极及其制造方法

    公开(公告)号:US20060138659A1

    公开(公告)日:2006-06-29

    申请号:US11178436

    申请日:2005-07-12

    CPC classification number: H01L29/4908

    Abstract: A copper gate electrode, applied in a thin-film-transistor liquid crystal display (LCD) device, at least comprises a patterned copper layer formed on a glass substrate, and a barrier layer formed on the patterned copper layer. The barrier layer comprises at least one of nitrogen and phosphorus, or comprises an alloy formularized as M1M2R wherein M1 is cobalt (Co) or molybdenum (Mo), M2 is tungsten (W), molybdenum (Mo), rhenium (Re) or vanadium (V), and R is boron (B) or phosphorus (P).

    Abstract translation: 施加在薄膜晶体管液晶显示器(LCD)装置中的铜栅电极至​​少包括形成在玻璃基板上的图案化铜层和形成在图案化铜层上的阻挡层。 阻挡层包括氮和磷中的至少一种,或者包含配位为M 1 M 2 R 2的合金,其中M 1是钴( Co)或钼(Mo),M 2是钨(W),钼(Mo),铼(Re)或钒(V),R是硼(B)或磷(P) 。

    Active device array substrate
    45.
    发明授权
    Active device array substrate 有权
    有源器件阵列衬底

    公开(公告)号:US08445911B2

    公开(公告)日:2013-05-21

    申请号:US12770737

    申请日:2010-04-30

    Abstract: An active device array substrate including a substrate, scan lines, data lines, active devices, a first dielectric layer, a common line, a second dielectric layer, a patterned conductive layer, a third dielectric layer, and pixel electrodes is provided. At least a part of the active devices are electrically connected to the scan lines and the data lines. The first dielectric layer covers the scan lines, the data lines and the active devices. The common line is disposed on the first dielectric layer. The second dielectric layer covers the common line and the first dielectric layer. The patterned conductive layer is disposed on the second dielectric layer. The third dielectric layer covers the patterned conductive layer and the second dielectric layer. The pixel electrodes are disposed on the third dielectric layer and electrically connected to the patterned conductive layer and the active devices.

    Abstract translation: 提供了包括衬底,扫描线,数据线,有源器件,第一介电层,公共线,第二电介质层,图案化导电层,第三电介质层和像素电极的有源器件阵列衬底。 有源器件的至少一部分电连接到扫描线和数据线。 第一介电层覆盖扫描线,数据线和有源器件。 公共线设置在第一电介质层上。 第二介电层覆盖公共线和第一介电层。 图案化导电层设置在第二介电层上。 第三电介质层覆盖图案化的导电层和第二介电层。 像素电极设置在第三电介质层上并电连接到图案化导电层和有源器件。

    Method for manufacturing pixel structure
    46.
    发明授权
    Method for manufacturing pixel structure 有权
    像素结构制造方法

    公开(公告)号:US08420413B2

    公开(公告)日:2013-04-16

    申请号:US13174795

    申请日:2011-07-01

    Abstract: A pixel structure including a scan line, a data line, an active device, a shielding electrode, and a pixel electrode is provided on a substrate. The data line includes an upper conductive wire and a bottom conductive wire. The upper conductive wire is disposed over and across the scan line. The bottom conductive wire is electrically connected to the upper conductive wire. The active device is electrically connected to the scan line and the upper conductive wire. The shielding electrode is disposed over the bottom conductive wire. The pixel electrode disposed over the shielding electrode is electrically connected to the active device. In addition, parts of the pixel electrode and parts of the shielding electrode form a storage capacitor.

    Abstract translation: 在基板上设置包括扫描线,数据线,有源器件,屏蔽电极和像素电极的像素结构。 数据线包括上导线和底导线。 上导线设置在扫描线上方并穿过扫描线。 底部导线与上导电线电连接。 有源器件电连接到扫描线和上导电线。 屏蔽电极设置在底部导线上。 设置在屏蔽电极上方的像素电极与有源器件电连接。 此外,像素电极的一部分和屏蔽电极的一部分形成存储电容器。

    Method of manufacturing a liquid crystal display unit structure including a patterned etch stop layer above a first data line segment
    47.
    发明授权
    Method of manufacturing a liquid crystal display unit structure including a patterned etch stop layer above a first data line segment 有权
    制造液晶显示单元结构的方法,其包括在第一数据线段之上的图案化蚀刻停止层

    公开(公告)号:US08199303B2

    公开(公告)日:2012-06-12

    申请号:US12274775

    申请日:2008-11-20

    Abstract: A liquid crystal display unit structure and the manufacturing method thereof are provided. The method comprises the following steps: forming a patterned first metal layer with a first data line segment and a lower gate pad on a substrate; forming a patterned dielectric layer covering the first data line and the lower gate pad having a plurality of first openings and a second opening therein, forming a patterned second metal layer including a common line, a second data line segment and a upper gate pad, wherein the upper gate pad is electrically connected to the lower gate pad through the first openings, and the second data line segment is electrically connected to the first data line segment through the first openings; finally forming a patterned passivation layer and a patterned transparent conductive layer.

    Abstract translation: 提供了一种液晶显示单元结构及其制造方法。 该方法包括以下步骤:在衬底上形成具有第一数据线段和下栅极焊盘的图案化第一金属层; 形成覆盖所述第一数据线的图案化电介质层和所述下栅极焊盘,其中具有多个第一开口和第二开口,形成包括公共线,第二数据线段和上栅极焊盘的图案化第二金属层,其中 所述上栅极焊盘通过所述第一开口电连接到所述下栅极焊盘,并且所述第二数据线段通过所述第一开口电连接到所述第一数据线段; 最后形成图案化的钝化层和图案化的透明导电层。

    Pixel Structure and Method for Fabricating the Same
    48.
    发明申请
    Pixel Structure and Method for Fabricating the Same 有权
    像素结构及其制造方法

    公开(公告)号:US20110165725A1

    公开(公告)日:2011-07-07

    申请号:US13047610

    申请日:2011-03-14

    CPC classification number: G02F1/136213 G02F2001/136218

    Abstract: A pixel structure is disclosed. The pixel structure includes a substrate, a first data line having at least one end formed on the substrate, a first insulation layer overlying the first data line and exposing a part of the end of the first data line, a shielding electrode disposed on the first insulation layer and overlapped with the first data line, a second data line formed on the first insulation layer and electrically connected to the exposed end of the first data line, a second insulation layer overlying the shielding electrode and the second data line, and a pixel electrode formed on the second insulation layer and overlapped with the shielding electrode. The invention also provides a method for fabricating the pixel structure.

    Abstract translation: 公开了像素结构。 像素结构包括基板,具有至少一个端部形成在基板上的第一数据线,覆盖第一数据线并暴露第一数据线的端部的一部分的第一绝缘层,设置在第一数据线上的屏蔽电极 绝缘层并且与第一数据线重叠,形成在第一绝缘层上并电连接到第一数据线的暴露端的第二数据线,覆盖屏蔽电极和第二数据线的第二绝缘层,以及像素 电极,形成在第二绝缘层上并与屏蔽电极重叠。 本发明还提供了一种用于制造像素结构的方法。

    Pixel structure and method for fabricating the same
    49.
    发明授权
    Pixel structure and method for fabricating the same 有权
    像素结构及其制造方法

    公开(公告)号:US07928450B2

    公开(公告)日:2011-04-19

    申请号:US11692248

    申请日:2007-03-28

    CPC classification number: G02F1/136213 G02F2001/136218

    Abstract: A pixel structure is disclosed. The pixel structure includes a substrate, a first data line having at least one end formed on the substrate, a first insulation layer overlying the first data line and exposing a part of the end of the first data line, a shielding electrode disposed on the first insulation layer and overlapped with the first data line, a second data line formed on the first insulation layer and electrically connected to the exposed end of the first data line, a second insulation layer overlying the shielding electrode and the second data line, and a pixel electrode formed on the second insulation layer and overlapped with the shielding electrode. The invention also provides a method for fabricating the pixel structure.

    Abstract translation: 公开了像素结构。 像素结构包括基板,具有至少一个端部形成在基板上的第一数据线,覆盖第一数据线并暴露第一数据线的端部的一部分的第一绝缘层,设置在第一数据线上的屏蔽电极 绝缘层并与第一数据线重叠,形成在第一绝缘层上并电连接到第一数据线的暴露端的第二数据线,覆盖屏蔽电极和第二数据线的第二绝缘层,以及像素 电极,形成在第二绝缘层上并与屏蔽电极重叠。 本发明还提供了一种用于制造像素结构的方法。

    COPPER GATE ELECTRODE OF LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME
    50.
    发明申请
    COPPER GATE ELECTRODE OF LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME 有权
    液晶显示装置的铜门电极及其制造方法

    公开(公告)号:US20090142923A1

    公开(公告)日:2009-06-04

    申请号:US12366693

    申请日:2009-02-06

    CPC classification number: H01L29/4908

    Abstract: A copper gate electrode, applied in a thin-film-transistor liquid crystal display (LCD) device, at least comprises a patterned copper layer formed on a glass substrate, and a barrier layer formed on the patterned copper layer. The barrier layer comprises at least one of nitrogen and phosphorus, or comprises an alloy formularized as M1M2R wherein M1 is cobalt (Co) or molybdenum (Mo), M2 is tungsten (W), molybdenum (Mo), rhenium (Re) or vanadium (V), and R is boron (B) or phosphorus (P).

    Abstract translation: 施加在薄膜晶体管液晶显示器(LCD)装置中的铜栅电极至​​少包括形成在玻璃基板上的图案化铜层和形成在图案化铜层上的阻挡层。 阻挡层包括氮和磷中的至少一种,或包含形式为M1M2R的合金,其中M1是钴(Co)或钼(Mo),M2是钨(W),钼(Mo),铼(Re)或钒 (V),R为硼(B)或磷(P)。

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