公开(公告)号：US07934377B2

公开(公告)日：2011-05-03

申请号：US11977650

申请日：2007-10-25

申请人： Dong Soo Kim ,  Jae Hoon Lee ,  Chun Seung Lee ,  Jae Hong Kim ,  Joong Seon Joh ,  Eun Tae Jeung

发明人： Dong Soo Kim ,  Jae Hoon Lee ,  Chun Seung Lee ,  Jae Hong Kim ,  Joong Seon Joh ,  Eun Tae Jeung

IPC分类号： F16D31/02

CPC分类号： E02F9/2207 ,  E02F9/2285 ,  E02F9/2292 ,  F15B21/008 ,  F15B21/087 ,  F15B2211/20538 ,  F15B2211/20592 ,  F15B2211/3144 ,  F15B2211/329 ,  F15B2211/36 ,  F15B2211/6054 ,  F15B2211/6313 ,  F15B2211/6316 ,  F15B2211/6346 ,  F15B2211/7053 ,  F15B2211/8616

摘要： An apparatus for easing an impact on a boom of an excavator and a method of controlling the same are disclosed, which can minimize the vibration occurring in the boom due to the impact on a boom cylinder by actively controlling an amount of hydraulic fluid being supplied to the boom cylinder when the operation of the boom cylinder is suddenly stopped due to an operator's sudden manipulation of an operation lever for a working device. The apparatus includes first and second hydraulic pumps; a boom cylinder; a main control valve; an operation lever for supplying pilot signal pressure to a spool of the main control valve when an operator manipulates the operation lever; operation lever detection means for detecting boom up and boom down signal pressures according to an amount of manipulation of the operation lever; boom cylinder pressure detection means for detecting pressures generated in a large chamber and a small chamber of the boom cylinder; a controller for calculating and outputting a control signal of the main control valve if the boom cylinder has been suddenly stopped; and boom vibration preventing means for controlling the pilot signal pressure being supplied from the second hydraulic pump to the main control valve.

摘要翻译： 公开了一种用于减轻对挖掘机的起重臂的冲击的装置及其控制方法，其可以通过主动地控制供给至动臂的液压流体的量来最小化由于对动臂缸的冲击而引起的动臂中产生的振动 当操作者突然操作用于工作装置的操作杆时，动臂缸的操作突然停止时的动臂缸。 该装置包括第一和第二液压泵; 动臂缸; 主控阀; 操作杆，用于当操作者操作操作杆时，将主控信号压力提供给主控制阀的阀芯; 操作杆检测装置，用于根据操作杆的操纵量检测吊杆上升和吊杆下降信号压力; 用于检测在动臂缸的大室和小室中产生的压力的动臂缸压力检测装置; 控制器，用于如果动臂缸突然停止则计算和输出主控制阀的控制信号; 以及用于控制从第二液压泵供给至主控制阀的先导信号压力的起重臂振动防止装置。

公开(公告)号：US07929346B2

公开(公告)日：2011-04-19

申请号：US12216745

申请日：2008-07-10

申请人： Dong Hun Yu ,  Kyoung Lae Cho ,  Dong Hyuk Chae ,  Jun Jin Kong ,  Jae Hong Kim ,  Seung-Hwan Song

发明人： Dong Hun Yu ,  Kyoung Lae Cho ,  Dong Hyuk Chae ,  Jun Jin Kong ,  Jae Hong Kim ,  Seung-Hwan Song

IPC分类号： G11C16/06 ,  G11C16/34 ,  G11C16/26

CPC分类号： G11C7/1006 ,  G11C7/14 ,  G11C11/5642 ,  G11C29/00 ,  G11C29/028 ,  G11C29/42 ,  G11C29/50 ,  G11C2211/5634

摘要： Example embodiments may relate to a method and an apparatus for reading data stored in a memory, for example, providing a method and an apparatus for controlling a reference voltage based on an error of the stored data. Example embodiments may provide a memory data detecting apparatus including a first voltage comparator to compare a threshold voltage of a memory cell with a first reference voltage, a first data determiner to determine a value of at least one data bit stored in the memory cell according to a result of the comparison, an error verifier to verify whether an error occurs in the determined value, a reference voltage determiner to determine a second reference voltage that is lower than the first reference voltage based on a result of the verification, and a second data determiner to re-determine the value of the data based on the determined second reference voltage.

摘要翻译： 示例性实施例可以涉及用于读取存储在存储器中的数据的方法和装置，例如提供一种基于存储的数据的错误来控制参考电压的方法和装置。 示例性实施例可以提供一种存储器数据检测装置，其包括用于将存储器单元的阈值电压与第一参考电压进行比较的第一电压比较器，第一数据确定器，用于根据存储器单元存储的至少一个数据位的值，根据 比较结果，用于验证所确定的值是否发生错误验证器，基于验证结果确定低于第一参考电压的第二参考电压的参考电压确定器，以及第二数据 确定器，以基于所确定的第二参考电压重新确定数据的值。

公开(公告)号：US07831881B2

公开(公告)日：2010-11-09

申请号：US12230832

申请日：2008-09-05

申请人： Heeseok Eun ,  Jae Hong Kim ,  Jun Jin Kong

发明人： Heeseok Eun ,  Jae Hong Kim ,  Jun Jin Kong

IPC分类号： H04L1/00

CPC分类号： G11C29/52 ,  G11C11/5642 ,  G11C29/00 ,  G11C2029/0411 ,  G11C2211/5634

摘要： The data detecting apparatus may provide a voltage comparison unit that compares a reference voltage, associated with a specific data bit from among a plurality of data bits stored in a memory cell, with a threshold voltage in the memory cell, a detection unit that detects a value of the specific data bit based on a result of the voltage comparison unit, and a decision unit that decides whether the specific data bit is successfully detected based on whether an error occurs in the detected data. The detection unit may re-detect a value of the specific data bit based on detection information with respect to at least one of an upper data bit and a lower data bit in relation to the specific data bit, in response to a result of the decision unit.

摘要翻译： 数据检测装置可以提供电压比较单元，其将存储在存储单元中的多个数据位中的与特定数据位相关联的参考电压与存储单元中的阈值电压进行比较，检测单元检测 基于电压比较单元的结果的特定数据位的值，以及判定单元，其基于检测到的数据中是否发生错误来判定是否成功检测到特定数据位。 响应于决定的结果，检测单元可以基于关于特定数据比特的上位数据位和下位数据位中的至少一个的检测信息重新检测特定数据位的值 单元。

公开(公告)号：US20100269266A1

公开(公告)日：2010-10-28

申请号：US12656985

申请日：2010-02-22

申请人： Sang Up Lee ,  Sung Jin Kim ,  Sang Yeon Pyo ,  Hong Seok Ko ,  Jae Hong Kim ,  Myung Sun Kang

发明人： Sang Up Lee ,  Sung Jin Kim ,  Sang Yeon Pyo ,  Hong Seok Ko ,  Jae Hong Kim ,  Myung Sun Kang

IPC分类号： D06F33/00 ,  D06F31/00

CPC分类号： D06F33/02 ,  D06F29/00

摘要： A washing machine and a control method thereof are disclosed. The washing machine has a plurality of washing tubs to clean laundry in different ways classified according to capacity and types of clothing. Different washing tubs simultaneously stop operations or are stopped at different times spaced apart from each other by a predetermined time, although washing tubs have different washing conditions (e.g., different input times of laundry, different amounts of laundry, different washing courses, etc.) when laundry is cleaned using the washing tubs.

摘要翻译： 公开了洗衣机及其控制方法。 洗衣机具有多个洗涤桶，以根据衣物的容量和类型分类的不同方式清洗衣物。 尽管洗涤桶具有不同的洗涤条件（例如，不同的衣物输入时间，不同的衣物量，不同的洗涤程序等），不同的洗涤桶同时停止操作或者在彼此间隔开的不同时间停止预定的时间。 当使用洗涤桶清洗衣物时。

公开(公告)号：US20100254195A1

公开(公告)日：2010-10-07

申请号：US12801505

申请日：2010-06-11

申请人： Kyoung Lae Cho ,  Seung-Hwan Song ,  Yoon Dong Park ,  Jun Jin Kong ,  Jae Hong Kim

发明人： Kyoung Lae Cho ,  Seung-Hwan Song ,  Yoon Dong Park ,  Jun Jin Kong ,  Jae Hong Kim

IPC分类号： G11C16/04

CPC分类号： G11C11/5628 ,  G11C16/32 ,  G11C16/349 ,  G11C29/00 ,  G11C2211/5634

摘要： Memory devices and/or methods that may estimate characteristics of multi-bit cell are provided. A memory device may include: a multi-bit cell array; a monitoring unit to extract a threshold voltage change over time value for reference threshold voltage states selected from a plurality of threshold voltage states corresponding to data stored in the multi-bit cell array; and an estimation unit to estimate a threshold voltage change over time values for the plurality of threshold voltage states based on the extracted threshold voltage change. Through this, it is possible to monitor a change over time of threshold voltages of a memory cell.

摘要翻译： 提供了可以估计多位单元特性的存储器件和/或方法。 存储器设备可以包括：多位单元阵列; 监测单元，用于提取从对应于存储在多位单元阵列中的数据的多个阈值电压状态中选择的参考阈值电压状态的时间值的阈值电压变化; 以及估计单元，用于基于所提取的阈值电压变化来估计所述多个阈值电压状态的时间值的阈值电压变化。 由此，可以监视存储单元的阈值电压随时间的变化。

公开(公告)号：US07738293B2

公开(公告)日：2010-06-15

申请号：US12213944

申请日：2008-06-26

申请人： Kyoung Lae Cho ,  Yoon Dong Park ,  Jun Jin Kong ,  Jong Han Kim ,  Jae Hong Kim ,  Young Hwan Lee ,  Heeseok Eun ,  Seung-Hwan Song

发明人： Kyoung Lae Cho ,  Yoon Dong Park ,  Jun Jin Kong ,  Jong Han Kim ,  Jae Hong Kim ,  Young Hwan Lee ,  Heeseok Eun ,  Seung-Hwan Song

IPC分类号： G11C16/04 ,  G11C29/04

CPC分类号： G11C11/5628 ,  G11C29/00 ,  G11C2216/14

摘要： A memory programming apparatuses and/or methods are provided. The memory programming apparatus may include a data storage unit, a first counting unit, an index storage unit and/or a programming unit. The data storage unit may be configured to store a data page. The first counting unit may be configured to generate index information by counting a number of cells included in at least one reference threshold voltage state based on the data page. The index storage unit may be configured to store the generated index information. The programming unit may be configured to store the data page in the data storage unit and store the generated index information in the index storage unit. The first counting unit may send the generated index information to the programming unit. The memory programming apparatus can monitor distribution states of threshold voltages in memory cells.

摘要翻译： 提供了存储器编程设备和/或方法。 存储器编程装置可以包括数据存储单元，第一计数单元，索引存储单元和/或编程单元。 数据存储单元可以被配置为存储数据页。 第一计数单元可以被配置为通过基于数据页计数包括在至少一个参考阈值电压状态中的单元的数量来生成索引信息。 索引存储单元可以被配置为存储所生成的索引信息。 编程单元可以被配置为将数据页存储在数据存储单元中，并将生成的索引信息存储在索引存储单元中。 第一计数单元可以将生成的索引信息发送到编程单元。 存储器编程装置可以监视存储器单元中阈值电压的分布状态。

公开(公告)号：US20090307566A1

公开(公告)日：2009-12-10

申请号：US12475640

申请日：2009-06-01

申请人： Jong Seon No ,  Beom Kyu Shin ,  Seok Il Youn ,  Jae Dong Yang ,  Jun Jin Kong ,  Jae Hong Kim ,  Yong June Kim ,  Kyoung Lae Cho

发明人： Jong Seon No ,  Beom Kyu Shin ,  Seok Il Youn ,  Jae Dong Yang ,  Jun Jin Kong ,  Jae Hong Kim ,  Yong June Kim ,  Kyoung Lae Cho

IPC分类号： H03M13/15 ,  G06F11/10

CPC分类号： H03M13/1105 ,  H03M13/136 ,  H03M13/15 ,  H03M13/1515 ,  H03M13/152 ,  H03M13/2906 ,  H03M13/3738 ,  H03M13/3753 ,  H04L1/0051 ,  H04L1/0057

摘要： An iterative decoding method is disclosed and includes sequentially executing a number of iterative decoding cycles in relation to a parity check equation until the parity check equation is resolved, or a maximum number N of iterative decoding cycles is reached, during execution of the number of iterative decoding cycles, storing in a data buffer minimum estimated values for a set of variable nodes corresponding to a minimum number of bit errors, and outputting the minimum estimated values stored in the data buffer as a final decoding result when the number of iterative decoding cycles reaches N.

摘要翻译： 公开了一种迭代解码方法，并且包括相对于奇偶校验方程顺序执行多个迭代解码周期，直到奇偶校验方程被解析为止，或者在执行迭代次数期间达到迭代解码周期的最大数量N 解码周期，在数据缓冲器中存储对应于最小数量的位错误的一组可变节点的最小估计值，并且当迭代解码周期数达到时，输出存储在数据缓冲器中的最小估计值作为最终解码结果 N.

公开(公告)号：US20090287975A1

公开(公告)日：2009-11-19

申请号：US12453163

申请日：2009-04-30

申请人： Yong June Kim ,  Jae Hong Kim ,  Jun Jin Kong ,  Kyoung Lae Cho

发明人： Yong June Kim ,  Jae Hong Kim ,  Jun Jin Kong ,  Kyoung Lae Cho

IPC分类号： G06F11/10 ,  G11C16/04 ,  G11C16/06 ,  G11C16/02 ,  H03M13/03

CPC分类号： G11C16/10 ,  G06F11/1072 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/3454 ,  G11C29/00 ,  G11C2211/5621 ,  G11C2211/5634

摘要： Memory devices and/or methods of managing memory data errors are provided. A memory device detects and corrects an error bit of data read from a plurality of memory cells, and identifies a memory cell storing the detected error bit. The memory device assigns a verification voltage to each of the plurality of first memory cells, the assigned verification voltage corresponding to the corrected bit for the identified memory cell, the assigned verification voltage corresponding to the read data for the remaining memory cells. The memory device readjusts the data stored in the plurality of memory cells using the assigned verification voltage. Through this, it is possible to increase a retention period of the data of the memory device.

摘要翻译： 提供了存储器件和/或管理存储器数据错误的方法。 存储器件检测并校正从多个存储器单元读取的数据的错误位，并且识别存储检测到的错误位的存储单元。 存储装置向多个第一存储器单元中的每一个分配验证电压，对应于所识别的存储单元的校正位的分配的验证电压，对应于剩余存储单元的读取数据的分配验证电压。 存储装置使用分配的验证电压重新调整存储在多个存储单元中的数据。 由此，可以增加存储装置的数据的保持期。

公开(公告)号：US07592222B2

公开(公告)日：2009-09-22

申请号：US12147178

申请日：2008-06-26

申请人： Eun Shil Park ,  Kwon Hong ,  Jae Hong Kim ,  Jae Hyoung Koo

发明人： Eun Shil Park ,  Kwon Hong ,  Jae Hong Kim ,  Jae Hyoung Koo

IPC分类号： H01L21/336

CPC分类号： H01L21/28273 ,  H01L27/11521

摘要： The present invention relates to a method of fabricating a flash memory device. According to a method of fabricating a flash memory device in accordance with an aspect of the present invention, a semiconductor substrate over which a tunnel insulating layer and a first conductive layer are formed is provided. A first oxide layer is formed on the first conductive layer using a plasma oxidization process in a state where a back bias voltage is applied. A nitride layer is formed on the first oxide layer. A second oxide layer is formed on the nitride layer. A second conductive layer is formed on the second oxide layer.

摘要翻译： 本发明涉及一种制造闪速存储器件的方法。 根据本发明的一个方面的制造闪速存储器件的方法，提供了形成隧道绝缘层和第一导电层的半导体衬底。 在施加反向偏置电压的状态下，使用等离子体氧化工艺在第一导电层上形成第一氧化物层。 在第一氧化物层上形成氮化物层。 在氮化物层上形成第二氧化物层。 在第二氧化物层上形成第二导电层。

公开(公告)号：US20090235129A1

公开(公告)日：2009-09-17

申请号：US12230832

申请日：2008-09-05

申请人： Heeseok Eun ,  Jae Hong Kim ,  Jun Jin Kong

发明人： Heeseok Eun ,  Jae Hong Kim ,  Jun Jin Kong

IPC分类号： G11C29/04 ,  G06F11/22 ,  G06F11/00

CPC分类号： G11C29/52 ,  G11C11/5642 ,  G11C29/00 ,  G11C2029/0411 ,  G11C2211/5634

摘要： The data detecting apparatus may provide a voltage comparison unit that compares a reference voltage, associated with a specific data bit from among a plurality of data bits stored in a memory cell, with a threshold voltage in the memory cell, a detection unit that detects a value of the specific data bit based on a result of the voltage comparison unit, and a decision unit that decides whether the specific data bit is successfully detected based on whether an error occurs in the detected data. The detection unit may re-detect a value of the specific data bit based on detection information with respect to at least one of an upper data bit and a lower data bit in relation to the specific data bit, in response to a result of the decision unit.

摘要翻译： 数据检测装置可以提供电压比较单元，其将存储在存储单元中的多个数据位中的与特定数据位相关联的参考电压与存储单元中的阈值电压进行比较，检测单元检测 基于电压比较单元的结果的特定数据位的值，以及判定单元，其基于检测到的数据中是否发生错误来判定是否成功检测到特定数据位。 响应于决定的结果，检测单元可以基于关于特定数据比特的上位数据位和下位数据位中的至少一个的检测信息重新检测特定数据位的值 单元。