公开(公告)号：US20200092025A1

公开(公告)日：2020-03-19

申请号：US16694318

申请日：2019-11-25

Applicant: Luxtera, Inc.

Inventor： Subal Sahni ,  John Andrew Guckenberger

IPC: H04J14/02 ,  H04B10/40 ,  G02B6/293 ,  G02B6/42 ,  G02B6/27

Abstract: Methods and systems for eliminating polarization dependence for 45 degree incidence MUX/DEMUX designs may include an optical transceiver, where the optical transceiver comprises an input optical fiber, a beam splitter, and a plurality of thin film filters arranged above corresponding grating couplers in a photonics die. The transceiver may receive an input optical signal comprising different wavelength signals via the input optical fiber, split the input optical signal into signals of first and polarizations using the beam splitter by separating the signals of the second polarization laterally from the signals of the first polarization, communicate the signals of the first polarization and the second polarization to the plurality of thin film filters, and reflect signals of each of the plurality of different wavelength signals to corresponding grating couplers in the photonics die using the thin film filters.

公开(公告)号：US10578892B2

公开(公告)日：2020-03-03

申请号：US16267545

申请日：2019-02-05

Applicant: Luxtera, Inc.

Inventor： Ali Ayazi ,  Gianlorenzo Masini ,  Subal Sahni ,  Attila Mekis ,  Thierry Pinguet

IPC: G02F1/025 ,  G02F1/225 ,  G02F1/21

Abstract: Methods and systems for a low-parasitic silicon high-speed phase modulator are disclosed and may include in an optical phase modulator that comprises a PN junction waveguide formed in a silicon layer, wherein the silicon layer may be on an oxide layer and the oxide layer may be on a silicon substrate. The PN junction waveguide may have fingers of p-doped and n-doped regions on opposite sides along a length of the PN junction waveguide. Contacts may be formed on the fingers of p-doped and n-doped regions. The fingers of p-doped and n-doped regions may be arranged symmetrically about the PN junction waveguide or staggered along the length of the PN junction waveguide. Etch transition features may be removed along the p-doped and n-doped regions.

公开(公告)号：US10469195B2

公开(公告)日：2019-11-05

申请号：US16158001

申请日：2018-10-11

Applicant: Luxtera, Inc.

Inventor： Subal Sahni ,  John Andrew Guckenberger

IPC: H04J14/06 ,  G02B6/27 ,  G02B6/293 ,  G02B6/30 ,  G02B6/34 ,  H04B10/25 ,  H04B10/40 ,  H04J14/02

Abstract: Methods and systems for eliminating polarization dependence for 45 degree incidence MUX/DEMUX designs may include an optical transceiver, where the optical transceiver comprises an input optical fiber, a beam splitter, and a plurality of thin film filters coupled to a photonics die. The thin film filters are arranged above corresponding grating couplers in the photonics die. The transceiver may receive an input optical signal comprising different wavelength signals via the input optical fiber, split the input optical signal into signals of first and polarizations using the beam splitter by separating the signals of the second polarization laterally from the signals of the first polarization, communicate the signals of the first polarization and the second polarization to the plurality of thin film filters, and reflect signals of each of the plurality of different wavelength signals to corresponding grating couplers in the photonics die using the thin film filters.

公开(公告)号：US10444593B2

公开(公告)日：2019-10-15

申请号：US15694236

申请日：2017-09-01

Applicant: Luxtera, Inc.

Inventor： Attila Mekis ,  Subal Sahni ,  Yannick De Koninck ,  Gianlorenzo Masini ,  Faezeh Gholami

IPC: G02B1/00 ,  G02F1/225 ,  G02F1/025 ,  G02F1/25 ,  G02F1/21

Abstract: Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor device having a semiconductor waveguide including a slab section, a rib section extending above the slab section, and raised ridges extending above the slab section on both sides of the rib section. The semiconductor device has a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or p-doped in each cross-section along the semiconductor waveguide. Electrical connection to the p-doped and n-doped material may be enabled by forming contacts on the raised ridges, and electrical connection may be provided to the rib section from one of the contacts via periodically arranged sections of the semiconductor waveguide, where a cross-section of both the rib section and the slab section in the periodically arranged sections may be fully n-doped or fully p-doped.

公开(公告)号：US10361790B2

公开(公告)日：2019-07-23

申请号：US16036447

申请日：2018-07-16

Applicant: Luxtera, Inc.

Inventor： Subal Sahni ,  Kam-Yan Hon ,  Attila Mekis ,  Gianlorenzo Masini ,  Lieven Verslegers

IPC: H04B10/548 ,  G02F1/025

Abstract: Methods and systems for a silicon-based optical phase modulator with high modal overlap are disclosed and may include, in an optical modulator having a rib waveguide in which a cross-shaped depletion region separates four alternately doped sections: receiving an optical signal at one end of the optical modulator, modulating the received optical signal by applying a modulating voltage, and communicating a modulated optical signal out of an opposite end of the modulator. The modulator may be in a silicon photonically-enabled integrated circuit which may be in a complementary-metal oxide semiconductor (CMOS) die. An optical mode may be centered on the cross-shaped depletion region. The four alternately doped sections may include: a shallow depth p-region, a shallow depth n-region, a deep p-region, and a deep n-region. The shallow depth p-region may be electrically coupled to the deep p-region periodically along the length of the modulator.

公开(公告)号：US20190181959A1

公开(公告)日：2019-06-13

申请号：US16268774

申请日：2019-02-06

Applicant: Luxtera, Inc.

Inventor： Gianlorenzo Masini ,  Subal Sahni

IPC: H04B10/60 ,  H01L31/028 ,  H01L31/0224 ,  G01J1/44 ,  H01L31/11 ,  H01L31/0368 ,  H03F3/08

CPC classification number: H04B10/60 ,  G01J1/44 ,  G01J2001/446 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/03682 ,  H01L31/1105 ,  H03F3/08

Abstract: A method and system for optoelectronic receivers utilizing waveguide heterojunction phototransistors (HPTs) integrated in a wafer are disclosed and may include receiving optical signals via optical fibers operably coupled to a top surface of the chip. Electrical signals may be generated utilizing HPTs that detect the optical signals. The electrical signals may be amplified via voltage amplifiers, or transimpedance amplifiers, the outputs of which may be utilized to bias the HPTs by a feedback network. The optical signals may be coupled into opposite ends of the HPTs. A collector of the HPTs may comprise a silicon layer and a germanium layer, a base may comprise a silicon germanium alloy with germanium composition ranging from 70% to 100%, and an emitter including crystalline or poly Si or SiGe. The optical signals may be demodulated by communicating a mixer signal to a base terminal of the HPTs.

公开(公告)号：US20190115995A1

公开(公告)日：2019-04-18

申请号：US16158001

申请日：2018-10-11

Applicant: Luxtera, Inc.

Inventor： Subal Sahni ,  John Andrew Guckenberger

IPC: H04J14/06 ,  G02B6/30 ,  G02B6/293 ,  G02B6/34 ,  G02B6/27 ,  H04J14/02 ,  H04B10/40 ,  H04B10/25

CPC classification number: H04J14/06 ,  G02B6/2706 ,  G02B6/2773 ,  G02B6/29362 ,  G02B6/2938 ,  G02B6/30 ,  G02B6/34 ,  H04B10/25 ,  H04B10/2572 ,  H04B10/40 ,  H04J14/02 ,  H04J14/0256

Abstract: Methods and systems for eliminating polarization dependence for 45 degree incidence MUX/DEMUX designs may include an optical transceiver, where the optical transceiver comprises an input optical fiber, a beam splitter, and a plurality of thin film filters coupled to a photonics die. The thin film filters are arranged above corresponding grating couplers in the photonics die. The transceiver may receive an input optical signal comprising different wavelength signals via the input optical fiber, split the input optical signal into signals of first and polarizations using the beam splitter by separating the signals of the second polarization laterally from the signals of the first polarization, communicate the signals of the first polarization and the second polarization to the plurality of thin film filters, and reflect signals of each of the plurality of different wavelength signals to corresponding grating couplers in the photonics die using the thin film filters.

公开(公告)号：US20190113823A1

公开(公告)日：2019-04-18

申请号：US16206755

申请日：2018-11-30

Applicant: Luxtera, Inc.

Inventor： Attila Mekis ,  Subal Sahni ,  Yannick De Koninck ,  Gianlorenzo Masini ,  Faezeh Gholami

IPC: G02F1/225 ,  G02F1/025

Abstract: Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor waveguide including a slab section, a rib section extending above the slab section, raised ridges extending above the slab section on both sides of the rib section, and a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or fully p-doped in each cross-section along the semiconductor waveguide. Electrical contact may be made to the doped material via contacts on the raised ridges, and electrical contact may be made to the rib section via periodically arranged sections of the semiconductor waveguide. A cross-section of both the rib section and the slab section in the periodically arranged sections may be mostly n-doped with an undoped portion or mostly p-doped with an undoped portion.

公开(公告)号：US10209540B2

公开(公告)日：2019-02-19

申请号：US16036409

申请日：2018-07-16

Applicant: Luxtera, Inc.

Inventor： Ali Ayazi ,  Gianlorenzo Masini ,  Subal Sahni ,  Attila Mekis ,  Thierry Pinguet

IPC: G02F1/025 ,  G02F1/225 ,  G02F1/21

Abstract: Methods and systems for a low-parasitic silicon high-speed phase modulator are disclosed and may include fabricating an optical phase modulator that comprises a PN junction waveguide formed in a silicon layer, wherein the silicon layer may be on an oxide layer and the oxide layer may be on a silicon substrate. The PN junction waveguide may have p-doped and n-doped regions on opposite sides along a length of the PN junction waveguide, and portions of the p-doped and n-doped regions may be removed. Contacts may be formed on remaining portions of the p-doped and n-doped regions. Portions of the p-doped and n-doped regions may be removed symmetrically about the PN junction waveguide. Portions of the p-doped and n-doped regions may be removed in a staggered fashion along the length of the PN junction waveguide. Etch transition features may be removed along the p-doped and n-doped regions.

公开(公告)号：US10151894B2

公开(公告)日：2018-12-11

申请号：US15688283

申请日：2017-08-28

Applicant: Luxtera, Inc.

Inventor： Michael Mack ,  Subal Sahni ,  Steffen Gloeckner

IPC: G02B6/42 ,  G02B6/32 ,  G02B6/34 ,  H04B10/25 ,  H04B10/079

Abstract: Methods and systems for optical power monitoring of a light source coupled to a silicon integrated circuit (chip) are disclosed and may include, in a system comprising an optical source coupled to the chip: emitting a primary beam from a front facet of a laser in the optical source assembly and a secondary beam from a back facet of the laser, directing the primary beam to an optical coupler in the chip, directing the secondary beam to a surface-illuminated photodiode in the chip, and monitoring an output power of the laser utilizing an output signal from the photodiode. The primary beam may comprise an optical source for a photonics transceiver in the chip. The focused primary beam and the secondary beam may be directed to the chip using reflectors in a lid of the optical source.