公开(公告)号：US20070217735A1

公开(公告)日：2007-09-20

申请号：US11376051

申请日：2006-03-15

申请人： Ming Cai ,  Xuehua Wu ,  Giovanni Barbarossa

发明人： Ming Cai ,  Xuehua Wu ,  Giovanni Barbarossa

IPC分类号： G02B6/26

CPC分类号： G02B6/3524 ,  G02B6/3512 ,  G02B6/3528 ,  G02B6/3556

摘要： An optical switch with a compact form factor includes a multiple-fiber collimator and an angle tuning element for deflecting an optical beam from an input fiber into one of at least two output fibers. The angle tuning element may be provided between a pair of coaxially-aligned collimators, one of which is the multiple-fiber collimator. Alternatively, the angle tuning element may be provided between the multiple-fiber collimator and a reflective surface, so that only one collimator is required and the optical switch may be designed to have its input and output ports on the same side.

摘要翻译： 具有紧凑形状因数的光学开关包括多光纤准直器和用于将光束从输入光纤偏转成至少两根输出光纤之一的角度调谐元件。 角度调谐元件可以设置在一对同轴对准的准直器之间，其中一个准直器是多光纤准直器。 或者，角度调谐元件可以设置在多光纤准直器和反射表面之间，使得仅需要一个准直器，并且光学开关可被设计成在其同一侧具有其输入和输出端口。

公开(公告)号：US07057195B2

公开(公告)日：2006-06-06

申请号：US10843762

申请日：2004-05-12

申请人： Ming Cai

发明人： Ming Cai

IPC分类号： G01N21/86 ,  H04N1/00

CPC分类号： H04N1/4076

摘要： A scanner and calibration method use therein. Setting first exposure duration and a second exposure duration for a transparency, wherein the first exposure duration is proportional to the second exposure duration. Scanning the transparency and a calibration area to produce a scan signal and a calibration signal, respectively, wherein the exposure duration for scanning the transparency is referred to as the first exposure duration, and the exposure duration for scanning the calibration area is referred to as the second exposure duration. Calculating a first gain coefficient according to the calibration signal. Calculating a second gain coefficient according to the first gain coefficient and a specific ratio of the first exposure duration to the second exposure duration, and finally, amplifying the scan signal by the second gain coefficient.

公开(公告)号：US09507485B2

公开(公告)日：2016-11-29

申请号：US13824144

申请日：2011-09-27

申请人： Ming Cai ,  Ran Sun ,  Geng Wang

发明人： Ming Cai ,  Ran Sun ,  Geng Wang

IPC分类号： G09G5/14 ,  G06F3/0481 ,  G01C21/36

CPC分类号： G06F3/0481 ,  G01C21/36 ,  G06F3/04815

摘要： An electronic device, a displaying method and a file saving method are described. The electronic device is in a first state and has a display area. The displaying method includes obtaining an image; obtaining an information entry; displaying the image in the display area; and displaying a first type information entry from the information entry in a first region of the display area with a first display effect, and displaying a second type information entry from the information entry in a second region of the display area with a second display effect; wherein the first type information entry is different from the second type information entry.

摘要翻译： 描述电子设备，显示方法和文件保存方法。 电子设备处于第一状态并具有显示区域。 显示方法包括获得图像; 获取信息条目; 在显示区域显示图像; 从所述显示区域的第一区域中的所述信息条目中显示第一类型信息条目，并且具有第二显示效果，在所述显示区域的第二区域中从所述信息条目显示第二类型信息条目; 其中所述第一类型信息条目与所述第二类型信息条目不同。

公开(公告)号：US20130275912A1

公开(公告)日：2013-10-17

申请号：US13976654

申请日：2011-12-30

申请人： Zhiqiang He ,  Haisheng Xu ,  Rong Yang ,  Ming Cai ,  Haixin Chai

发明人： Zhiqiang He ,  Haisheng Xu ,  Rong Yang ,  Ming Cai ,  Haixin Chai

IPC分类号： G06F3/0484

CPC分类号： G06F3/0484 ,  G06F3/048 ,  G06F8/38 ,  H04M1/72522 ,  H04M1/72583

摘要： Semiconductor devices and methods for manufacturing the same are disclosed. In one embodiment, the semiconductor device comprises a semiconductor substrate; an insulating layer located on the semiconductor substrate; a semiconductor body located on the insulating layer; a cavity formed in the semiconductor body and into the insulating layer; source/drain regions abutting opposite first side faces of the semiconductor body; gates located on opposite second side faces of the semiconductor body; a channel layer interposed between the respective second side faces and the cavity; and a super-steep-retrograded-well and a halo super-steep-retrograded-well formed in the channel layer. The super-steep-retrograded-well and the halo super-steep-retrograded-well have opposite dopant polarities.

摘要翻译： 公开了半导体装置及其制造方法。 在一个实施例中，半导体器件包括半导体衬底; 位于所述半导体衬底上的绝缘层; 位于所述绝缘层上的半导体本体; 在半导体本体中形成并进入绝缘层的空腔; 源极/漏极区域邻接半导体本体的相对的第一侧面; 位于半导体本体的相对的第二侧面上的门; 插入在相应的第二侧面和空腔之间的沟道层; 并且在通道层中形成了一个超级陡峭的后退井和一个光晕超陡峭的回归井。 超级陡峭后退井和光晕超陡倾斜井具有相反的掺杂极性。

公开(公告)号：US08503058B2

公开(公告)日：2013-08-06

申请号：US12777169

申请日：2010-05-10

申请人： Ruibo Wang ,  Ming Wu ,  Ming Cai

发明人： Ruibo Wang ,  Ming Wu ,  Ming Cai

IPC分类号： G02F1/03 ,  G01B9/02

CPC分类号： G02F1/21 ,  G02B6/29358 ,  G02B6/29398 ,  G02F2001/213 ,  G02F2203/21

摘要： An etalon has an effective cavity length that can be tuned to compensate for temperature-dependent frequency shift and/or for random variations in the manufacturing process. The effective cavity length of an etalon is adjusted by changing the orientation of a tuning plate positioned in the etalon cavity. A screw adjustment and bending beam spring are used to change tuning plate orientation and precisely tune the etalon resonance frequency after the manufacturing process has been completed. Orientation of the tuning plate is adjusted during operation of the etalon using a passive thermal compensation mechanism, such as a bimetal support arm, which is fixed to the tuning plate and configured to reposition the tuning plate with changing temperature.

摘要翻译： 标准具具有有效的腔体长度，可以被调整以补偿温度依赖的频移和/或制造过程中的随机变化。 通过改变定位在标准具腔中的调谐板的取向来调节标准具的有效腔长度。 在制造过程完成后，使用螺丝调节和弯曲梁弹簧来改变调谐板定向并精确调谐标准具共振频率。 使用诸如双金属支撑臂的被动热补偿机构在标准具的操作期间调整调谐板的方向，所述双金属支撑臂固定到调谐板并且被配置为在调节温度改变时重新定位调谐板。

公开(公告)号：US08349716B2

公开(公告)日：2013-01-08

申请号：US12911186

申请日：2010-10-25

申请人： Ming Cai ,  Christian Lavoie ,  Ahmet S. Ozcan ,  Bin Yang ,  Zhen Zhang

发明人： Ming Cai ,  Christian Lavoie ,  Ahmet S. Ozcan ,  Bin Yang ,  Zhen Zhang

IPC分类号： H01L21/336 ,  H01L21/04

CPC分类号： H01L21/2257 ,  H01L21/28512 ,  H01L21/28518 ,  H01L29/665 ,  H01L29/66643

摘要： Disclosed is a semiconductor device having a p-n junction with reduced junction leakage in the presence of metal silicide defects that extend to the junction and a method of forming the device. Specifically, a semiconductor layer having a p-n junction is formed. A metal silicide layer is formed on the semiconductor layer and a dopant is implanted into the metal silicide layer. An anneal process is performed causing the dopant to migrate toward the metal silicide-semiconductor layer interface such that the peak concentration of the dopant will be within a portion of the metal silicide layer bordering the metal silicide-semiconductor layer interface and encompassing the defects. As a result, the silicide to silicon contact is effectively engineered to increase the Schottky barrier height at the defect, which in turn drastically reduces any leakage that would otherwise occur, when the p-n junction is in reverse polarity.

摘要翻译： 公开了一种具有p-n结的半导体器件，其在存在延伸到结的金属硅化物缺陷的情况下具有减少的结漏电以及形成器件的方法。 具体地说，形成具有p-n结的半导体层。 在半导体层上形成金属硅化物层，并且将掺杂剂注入到金属硅化物层中。 执行退火处理，使掺杂剂朝向金属硅化物半导体层界面迁移，使得掺杂剂的峰值浓度将在金属硅化物层的与金属硅化物半导体层界面接壤并包围缺陷的部分内。 结果，硅化物与硅接触被有效地设计以增加缺陷处的肖特基势垒高度，这反过来大大降低了当p-n结处于相反极性时将会发生的任何泄漏。

公开(公告)号：US20120098042A1

公开(公告)日：2012-04-26

申请号：US12911186

申请日：2010-10-25

申请人： Ming Cai ,  Christian Lavoie ,  Ahmet S. Ozcan ,  Bin Yang ,  Zhen Zhang

发明人： Ming Cai ,  Christian Lavoie ,  Ahmet S. Ozcan ,  Bin Yang ,  Zhen Zhang

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/04

CPC分类号： H01L21/2257 ,  H01L21/28512 ,  H01L21/28518 ,  H01L29/665 ,  H01L29/66643

摘要： Disclosed is a semiconductor device having a p-n junction with reduced junction leakage in the presence of metal silicide defects that extend to the junction and a method of forming the device. Specifically, a semiconductor layer having a p-n junction is formed. A metal silicide layer is formed on the semiconductor layer and a dopant is implanted into the metal silicide layer. An anneal process is performed causing the dopant to migrate toward the metal silicide-semiconductor layer interface such that the peak concentration of the dopant will be within a portion of the metal silicide layer bordering the metal silicide-semiconductor layer interface and encompassing the defects. As a result, the silicide to silicon contact is effectively engineered to increase the Schottky barrier height at the defect, which in turn drastically reduces any leakage that would otherwise occur, when the p-n junction is in reverse polarity.

摘要翻译： 公开了一种具有p-n结的半导体器件，其在存在延伸到结的金属硅化物缺陷的情况下具有减少的结漏电以及形成器件的方法。 具体地说，形成具有p-n结的半导体层。 在半导体层上形成金属硅化物层，并且将掺杂剂注入到金属硅化物层中。 执行退火处理，使掺杂剂朝向金属硅化物半导体层界面迁移，使得掺杂剂的峰值浓度将在金属硅化物层的与金属硅化物半导体层界面接壤并包围缺陷的部分内。 结果，硅化物与硅接触被有效地设计以增加缺陷处的肖特基势垒高度，这反过来大大降低了当p-n结处于相反极性时将会发生的任何泄漏。

公开(公告)号：US20110273758A1

公开(公告)日：2011-11-10

申请号：US12777169

申请日：2010-05-10

申请人： Ruibo Wang ,  Ming Wu ,  Ming Cai

发明人： Ruibo Wang ,  Ming Wu ,  Ming Cai

IPC分类号： G02F1/03

CPC分类号： G02F1/21 ,  G02B6/29358 ,  G02B6/29398 ,  G02F2001/213 ,  G02F2203/21

摘要： An etalon has an effective cavity length that can be tuned to compensate for temperature-dependent frequency shift and/or for random variations in the manufacturing process. The effective cavity length of an etalon is adjusted by changing the orientation of a tuning plate positioned in the etalon cavity. A screw adjustment and bending beam spring are used to change tuning plate orientation and precisely tune the etalon resonance frequency after the manufacturing process has been completed. Orientation of the tuning plate is adjusted during operation of the etalon using a passive thermal compensation mechanism, such as a bimetal support arm, which is fixed to the tuning plate and configured to reposition the tuning plate with changing temperature.

摘要翻译： 标准具具有有效的腔体长度，可以被调整以补偿温度依赖的频移和/或制造过程中的随机变化。 通过改变定位在标准具腔中的调谐板的取向来调节标准具的有效腔长度。 在制造过程完成后，使用螺丝调节和弯曲梁弹簧来改变调谐板定向并精确调谐标准具共振频率。 使用诸如双金属支撑臂的被动热补偿机构在标准具的操作期间调整调谐板的方向，所述双金属支撑臂固定到调谐板并且被配置为在调节温度改变时重新定位调谐板。

公开(公告)号：US07184623B2

公开(公告)日：2007-02-27

申请号：US11051742

申请日：2005-02-03

申请人： Ming Cai ,  Giovanni Barbarossa

发明人： Ming Cai ,  Giovanni Barbarossa

IPC分类号： G02B6/26

CPC分类号： G02B6/262 ,  G02B6/0288 ,  G02B6/14 ,  G02B6/2551 ,  G02B6/2552

摘要： An improved fiber-optic communications system comprises a multi-mode waveguide carrying an optical signal, a single-mode waveguide optically coupled to and receiving the optical signal from the multi-mode waveguide and an adiabatic coupler optically coupled between the multi-mode waveguide and the single-mode waveguide. The multi-mode and single-mode waveguides may be optical fibers. The adiabatic coupler may comprise a tapered core surrounded by a cladding. Alternatively, the adiabatic coupler may comprise a core surrounded by a cladding, wherein the refractive index of at least one of the core and the cladding varies over the length of the adiabatic coupler.

摘要翻译： 改进的光纤通信系统包括承载光信号的多模式波导，与多模波导光耦合并接收光信号的单模波导和光耦合在多模波导与 单模波导。 多模和单模波导可以是光纤。 绝热耦合器可以包括被包层包围的锥形芯。 或者，绝热耦合器可以包括由包层围绕的芯，其中芯和包层中的至少一个的折射率在绝热耦合器的长度上变化。

公开(公告)号：US06859582B2

公开(公告)日：2005-02-22

申请号：US10007630

申请日：2001-11-09

申请人： Ming Cai ,  Kerry J. Vahala

发明人： Ming Cai ,  Kerry J. Vahala

IPC分类号： G02B6/10 ,  G02B6/12 ,  G02B6/122 ,  G02B6/34 ,  G02B6/26

CPC分类号： G02B6/1228 ,  G02B6/10 ,  G02B6/12007 ,  G02B6/29341 ,  G02B2006/1215 ,  G02B2006/12195

摘要： A hybrid and tapered waveguide coupler that has two different single-mode waveguide sections for light at two different wavelengths to couple light at the two different wavelengths into or out of an optical device located in a reach of an evanescent field of the guided optical energy in the waveguide coupler.

摘要翻译： 一种混合和锥形波导耦合器，其具有用于在两个不同波长处的光的两个不同单模波导部分，以将两个不同波长的光耦合到位于导向光能的渐逝场的到达处的光学装置中或外 波导耦合器。