公开(公告)号：US09727214B2

公开(公告)日：2017-08-08

申请号：US13976654

申请日：2011-12-30

申请人： Zhiqiang He ,  Haisheng Xu ,  Rong Yang ,  Ming Cai ,  Haixin Chai

发明人： Zhiqiang He ,  Haisheng Xu ,  Rong Yang ,  Ming Cai ,  Haixin Chai

IPC分类号： G06F3/0484 ,  G06F3/048 ,  G06F9/44 ,  H04M1/725

CPC分类号： G06F3/0484 ,  G06F3/048 ,  G06F8/38 ,  H04M1/72522 ,  H04M1/72583

摘要： An electronic apparatus and an object processing method are provided. An interface management module of the apparatus generates a user operation interface on the display screen. The interface has a first operating area and a second operating area, which have their respective sizes associated with each other in the interface. A first functional module displays a first object in the first operating area. A second functional module displays a second object in the second operating area. A first application program unit performs a corresponding process operation on the first object. An acquisition unit acquires a first operation by a user on the first operating area. A control unit controls the first application program unit to be in a ready state, when the first operation satisfies a predetermined condition.

公开(公告)号：US20130275912A1

公开(公告)日：2013-10-17

申请号：US13976654

申请日：2011-12-30

申请人： Zhiqiang He ,  Haisheng Xu ,  Rong Yang ,  Ming Cai ,  Haixin Chai

发明人： Zhiqiang He ,  Haisheng Xu ,  Rong Yang ,  Ming Cai ,  Haixin Chai

IPC分类号： G06F3/0484

CPC分类号： G06F3/0484 ,  G06F3/048 ,  G06F8/38 ,  H04M1/72522 ,  H04M1/72583

摘要： Semiconductor devices and methods for manufacturing the same are disclosed. In one embodiment, the semiconductor device comprises a semiconductor substrate; an insulating layer located on the semiconductor substrate; a semiconductor body located on the insulating layer; a cavity formed in the semiconductor body and into the insulating layer; source/drain regions abutting opposite first side faces of the semiconductor body; gates located on opposite second side faces of the semiconductor body; a channel layer interposed between the respective second side faces and the cavity; and a super-steep-retrograded-well and a halo super-steep-retrograded-well formed in the channel layer. The super-steep-retrograded-well and the halo super-steep-retrograded-well have opposite dopant polarities.

摘要翻译： 公开了半导体装置及其制造方法。 在一个实施例中，半导体器件包括半导体衬底; 位于所述半导体衬底上的绝缘层; 位于所述绝缘层上的半导体本体; 在半导体本体中形成并进入绝缘层的空腔; 源极/漏极区域邻接半导体本体的相对的第一侧面; 位于半导体本体的相对的第二侧面上的门; 插入在相应的第二侧面和空腔之间的沟道层; 并且在通道层中形成了一个超级陡峭的后退井和一个光晕超陡峭的回归井。 超级陡峭后退井和光晕超陡倾斜井具有相反的掺杂极性。

公开(公告)号：US20130094379A1

公开(公告)日：2013-04-18

申请号：US13634287

申请日：2011-04-14

申请人： Haisheng Xu

发明人： Haisheng Xu

IPC分类号： H04W52/02

CPC分类号： H04W52/0209 ,  H04W28/18 ,  H04W52/0216 ,  H04W52/0261 ,  H04W76/28 ,  Y02D70/1262 ,  Y02D70/24

摘要： The present invention provides a device and a method for dynamically configuring Discontinuous Reception parameters, and the method includes: when DRX parameters of a terminal need to be adjusted, the DRX parameters are adjusted until the terminal satisfies the requirement of the Guaranteed Bit Rate after the adjustment of DRX, and then the DRX parameters are no longer adjusted. Adopting the technical scheme of the present invention can make a base station adapt to the power-saving and performance requirement of the terminal in real time by a dynamic estimation of the DRX adjusted parameters of the terminal, in addition, it can also satisfy the requirement for the signaling load in different circumstances by configuring an adjusted cycle.

摘要翻译： 本发明提供一种用于动态配置不连续接收参数的装置和方法，该方法包括：当终端的DRX参数需要调整时，调整DRX参数，直到终端满足保证比特率的要求为止 调整DRX，然后不再调整DRX参数。 采用本发明的技术方案，可以通过动态估计终端的DRX调整参数，使基站实时适应终端的节电和性能要求，另外还可以满足要求 通过配置调整的周期在不同情况下的信令负载。

公开(公告)号：US08902781B2

公开(公告)日：2014-12-02

申请号：US13634287

申请日：2011-04-14

申请人： Haisheng Xu

发明人： Haisheng Xu

IPC分类号： H04W52/24 ,  H04W52/02 ,  H04W28/18 ,  H04W76/04

CPC分类号： H04W52/0209 ,  H04W28/18 ,  H04W52/0216 ,  H04W52/0261 ,  H04W76/28 ,  Y02D70/1262 ,  Y02D70/24

摘要： The present invention provides a device and a method for dynamically configuring Discontinuous Reception parameters, and the method includes: when DRX parameters of a terminal need to be adjusted, the DRX parameters are adjusted until the terminal satisfies the requirement of the Guaranteed Bit Rate after the adjustment of DRX, and then the DRX parameters are no longer adjusted. Adopting the technical scheme of the present invention can make a base station adapt to the power-saving and performance requirement of the terminal in real time by a dynamic estimation of the DRX adjusted parameters of the terminal, in addition, it can also satisfy the requirement for the signaling load in different circumstances by configuring an adjusted cycle.

摘要翻译： 本发明提供一种用于动态配置不连续接收参数的装置和方法，该方法包括：当终端的DRX参数需要调整时，调整DRX参数，直到终端满足保证比特率的要求为止 调整DRX，然后不再调整DRX参数。 采用本发明的技术方案，可以通过动态估计终端的DRX调整参数，使基站实时适应终端的节电和性能要求，另外还可以满足要求 通过配置调整的周期在不同情况下的信令负载。

公开(公告)号：US20090026513A1

公开(公告)日：2009-01-29

申请号：US11919584

申请日：2006-05-02

申请人： Nicklas Johansson ,  Haisheng Xu ,  Geirr I. Leistad

发明人： Nicklas Johansson ,  Haisheng Xu ,  Geirr I. Leistad

IPC分类号： H01L27/115 ,  C23C14/12

CPC分类号： C23C14/12 ,  B05D1/60 ,  B05D2506/10 ,  C08F214/22 ,  H01L21/0212 ,  H01L21/02269 ,  H01L21/02356 ,  H01L21/3127 ,  H01L27/285 ,  H01L29/40111

摘要： In a method for forming ferroelectric thin films of vinylidene fluoride oligomer or vinylidene fluoride co-oligomer, oligomer material is evaporated in vacuum chamber and deposited as a thin film on a substrate which is cooled to a temperature in a range determined by process parameters and physical properties of the deposited VDF oligomer or co-oligomer thin film. In an application of the method of the invention for fabricating ferroelectric memory cells or ferroelectric memory devices, a ferroelectric memory material is provided in the form of a thin film of VDF oligomer or VDF co-oligomer located between electrode structures. A ferroelectric memory cell or ferroelectric memory device fabricated in this manner has the memory material in the form of a thin film of VDF oligomer or VDF co-oligomer provided on at least one of first and second electrode structures, such that the thin film is provided on at least one of the electrode structures or between first and second electrode structures.

摘要翻译： 在形成偏二氟乙烯低聚物或偏二氟乙烯共聚低聚物的铁电薄膜的方法中，将低聚物材料在真空室中蒸发并沉积在基板上，该基板被冷却到由工艺参数和物理 沉积的VDF低聚物或共低聚物薄膜的性质。 在本发明的用于制造铁电存储器单元或铁电存储器件的方法的应用中，铁电存储器材料以位于电极结构之间的VDF低聚物或VDF共低聚物的薄膜形式提供。 以这种方式制造的铁电存储器单元或铁电存储器件具有设置在第一和第二电极结构中的至少一个上的VDF低聚物或VDF共同寡聚体薄膜形式的记忆材料，从而提供薄膜 在至少一个电极结构中或在第一和第二电极结构之间。

公开(公告)号：US06852416B2

公开(公告)日：2005-02-08

申请号：US10121936

申请日：2002-04-12

申请人： Qiming Zhang ,  Zhongyang Cheng ,  Haisheng Xu

发明人： Qiming Zhang ,  Zhongyang Cheng ,  Haisheng Xu

IPC分类号： C08F214/22 ,  C08F214/26 ,  H01L41/193 ,  B32B27/18 ,  C08L27/16 ,  H01L51/30

CPC分类号： H01L41/193 ,  C08F214/22 ,  C08F214/26 ,  Y10T428/3154

摘要： There are disclosed new composite materials having improved electric field induced strain levels, improved electric constants, and having advantageous mechanical properties for use in electrical devices.

摘要翻译： 公开了具有改善的电场诱导应变水平，改进的电常数并且具有用于电气装置的有利的机械性能的新型复合材料。

公开(公告)号：US06787238B2

公开(公告)日：2004-09-07

申请号：US10108231

申请日：2002-03-27

申请人： Qiming Zhang ,  Zhongyang Cheng ,  Haisheng Xu

发明人： Qiming Zhang ,  Zhongyang Cheng ,  Haisheng Xu

IPC分类号： B32B2730

CPC分类号： C08F214/26 ,  C08F214/22 ,  H01L41/193 ,  Y10S428/91 ,  Y10T428/3154 ,  Y10T428/31544

摘要： There are disclosed new polymer materials having improved electric field induced strain levels, dielectric constants, and elastic energy densities for use in electromechanical and dielectric applications. Methods of manufacture of new polymer materials are also disclosed.

摘要翻译： 公开了具有改进的电场诱导应变水平，介电常数和用于机电和电介质应用的弹性能量密度的新型聚合物材料。 还公开了新型聚合物材料的制造方法。