Semiconductor memory device having a hierarchical bit line architecture
    41.
    发明授权
    Semiconductor memory device having a hierarchical bit line architecture 失效
    具有分层位线架构的半导体存储器件

    公开(公告)号:US06449201B1

    公开(公告)日:2002-09-10

    申请号:US09913010

    申请日:2001-10-03

    申请人: Makoto Kojima

    发明人: Makoto Kojima

    IPC分类号: G11C700

    摘要: A semiconductor memory device 100 includes: a differential sense amplifier 9 having an input node 9a and an input node 9b, an information read section 110a, a reference section 110b, and a control section 140. The information read section 110a includes: a main bit line MBL coupled to the input node 9a; a select gate 4a; a sub-bit line SBL which is coupled to the main bit line MBL via the select gate 4a; a memory cell 1 which is coupled to the sub-bit line SBL and which is selectively activated in accordance with a voltage on a word line WL: a precharge section 120a for precharging the input node 9a and the main bit line MBL to a supply voltage Vdd; and a reset section 130b for resetting the sub-bit line SBL to a ground voltage Vss. The control section 140 controls the precharge section 120a, the reset section 130a, and the select gate 4a so that a portion of a charge which is precharged in the input node 9a and the main bit line MBL is redistributed to the sub-bit line SBL after precharging the input node 9a and the main bit line MBL to the supply voltage Vdd and resetting the sub-bit line SBL to the ground voltage Vss.

    摘要翻译: 半导体存储器件100包括:具有输入节点9a和输入节点9b的差分读出放大器9,信息读取部分110a,参考部分110b和控制部分140.信息读取部分110a包括:主位 线MBL耦合到输入节点9a; 选择门4a; 经由选择栅极4a耦合到主位线MBL的子位线SBL; 存储单元1,其耦合到子位线SBL,并且根据字线WL上的电压选择性地激活:用于将输入节点9a和主位线MBL预充电到电源电压的预充电部分120a Vdd; 以及用于将子位线SBL复位为接地电压Vss的复位部分130b。 控制部分140控制预充电部分120a,复位部分130a和选择门4a,使得在输入节点9a和主位线MBL中预充电的电荷的一部分被重新分配到子位线SBL 在将输入节点9a和主位线MBL预充电到电源电压Vdd之后,并将子位线SBL复位为接地电压Vss。

    Nonvolatile semiconductor memory device
    42.
    发明授权
    Nonvolatile semiconductor memory device 有权
    非易失性半导体存储器件

    公开(公告)号:US06188608B1

    公开(公告)日:2001-02-13

    申请号:US09551662

    申请日:2000-04-18

    IPC分类号: G11C1600

    CPC分类号: G11C16/28 G11C16/0416

    摘要: A nonvolatile semiconductor memory device includes: first and second memory cell blocks, each of the first and second memory cell blocks including at least one memory cell connected to a first word line; third and fourth memory cell blocks, each of the third and fourth memory cell blocks including at least one memory cell connected to a second word line; and an amplifier for inputting or outputting data through first and second bit lines. Each said memory cell block includes at least one dummy cell.

    摘要翻译: 非易失性半导体存储器件包括:第一和第二存储器单元块,第一和第二存储单元块中的每一个包括连接到第一字线的至少一个存储器单元; 第三和第四存储单元块,第三和第四存储单元块中的每一个包括连接到第二字线的至少一个存储单元; 以及用于通过第一和第二位线输入或输出数据的放大器。 每个所述存储单元块包括至少一个虚拟单元。

    Internal step-down converter
    43.
    发明授权
    Internal step-down converter 失效
    内部降压转换器

    公开(公告)号:US6064188A

    公开(公告)日:2000-05-16

    申请号:US398427

    申请日:1999-09-17

    CPC分类号: G05F1/465

    摘要: An internal step-down converter includes a potential difference detector and a cross-coupled amplifier. The potential difference detector detects and amplifies a potential difference between a reference voltage VREF and an internally-stepped-down supply voltage VINT. The cross-coupled amplifier receives the amplified output VDRV2 of the potential difference detector and the output VDRV of a current-mirror differential amplifier, which is applied as a control voltage to a driver implemented as a p-channel MOSFET. The cross-coupled amplifier regulates the amplitude of the control voltage VDRV substantially at the potential difference .vertline.VDD-VSS.vertline. between the external supply voltages. As a result, the load-current-handling capability of the driver can be considerably increased. While the load current ILOAD is relatively small, a control signal generator deactivates the potential difference detector and the cross-coupled amplifier to prevent the current from being consumed in vain. Accordingly, an internal step-down converter with enhanced load-current-handling capability is provided without increasing the layout area or the current consumed.

    摘要翻译: 内部降压转换器包括电位差检测器和交叉耦合放大器。 电位差检测器检测并放大参考电压VREF和内部降压电源电压VINT之间的电位差。 交叉耦合放大器接收电位差检测器的放大输出VDRV2和电流镜差分放大器的输出VDRV,电流镜差分放大器作为控制电压施加到实现为p沟道MOSFET的驱动器。 交叉耦合放大器基本上以电位差| VDD-VSS |调节控制电压VDRV的幅度 外部电源电压之间。 结果,驱动器的负载电流处理能力可以大大增加。 当负载电流ILOAD相对较小时,控制信号发生器将电位差检测器和交叉耦合放大器去激活,以防止电流消耗。 因此,提供了具有增强的负载电流处理能力的内部降压转换器,而不增加布局面积或消耗的电流。

    Chiral smectic liquid crystal device having fluorine-containing
polymeric alignment film with predetermined refractive index anisotropy
after rubbing
    47.
    发明授权
    Chiral smectic liquid crystal device having fluorine-containing polymeric alignment film with predetermined refractive index anisotropy after rubbing 失效
    具有摩擦后具有预定折射率各向异性的含氟聚合物取向膜的手性近晶液晶装置

    公开(公告)号:US5576864A

    公开(公告)日:1996-11-19

    申请号:US429017

    申请日:1995-04-26

    IPC分类号: G02F1/1337 G02F1/141

    摘要: A liquid crystal device is constituted by a pair of substrates, and a liquid crystal disposed between the substrates. At least one of the substrates has thereon an alignment film. The alignment film is characterized in that (1) it has a surface energy of at most 35 dyne/cm before rubbing and has been rubbed to have a refractive index anisotropy of at least 0.02, or (2) it has been rubbed to have a surface energy difference .DELTA.E of at least 9 dyne/cm and a difference .DELTA..delta. in dispersion term of the surface energy of at least 6 dyne/cm between before and after the rubbing. The alignment film is effective in providing a high contrast and decreasing a delay in optical response causing after-image.

    摘要翻译: 液晶装置由一对基板和设置在基板之间的液晶构成。 至少一个基板上具有取向膜。 取向膜的特征在于,(1)在摩擦前具有至多35达因/厘米的表面能,并且已经被摩擦以具有至少0.02的折射率各向异性,或(2)已被摩擦以具有 至少9达因/厘米的表面能差ΔTA和摩擦前后至少6达因/厘米的表面能的色散项的差ΔTA。 取向膜有效地提供高对比度并减少导致后图像的光学响应的​​延迟。

    Initial value setting circuit
    48.
    发明授权
    Initial value setting circuit 失效
    初始值设定电路

    公开(公告)号:US5523710A

    公开(公告)日:1996-06-04

    申请号:US441923

    申请日:1995-05-16

    IPC分类号: H03K3/356 H03K17/22 H03K3/02

    CPC分类号: H03K17/223 H03K3/356008

    摘要: A voltage level of an output node is reversed by an inverter. An output of the inverter is used as an initial setting signal. A feedback switching transistor is also provided in an initial value setting circuit. Furthermore, there is provided a limiting device for eliminating an abnormal operation of the feedback switching transistor until the inverter starts a normal operation, in the event of momentary power failure or when the electric power source is quickly turned on after a very short break. Accordingly, normal operation of the inverter is assured even in such an abnormal condition accompanying momentary interruption of power supply, thereby surely outputting an initial setting signal.

    摘要翻译: 输出节点的电压电平由逆变器反相。 逆变器的输出用作初始设定信号。 反馈开关晶体管也设置在初始值设定电路中。 此外,提供一种用于消除反馈开关晶体管的异常操作的限制装置,直到变频器开始正常操作,在瞬间停电的情况下或者当电源在非常短暂的中断之后快速接通时。 因此,即使在伴随电源瞬时中断的异常状态下,也能确保逆变器的正常动作,从而可靠地输出初始设定信号。

    Liquid crystal device
    49.
    发明授权
    Liquid crystal device 失效
    液晶装置

    公开(公告)号:US5510159A

    公开(公告)日:1996-04-23

    申请号:US214428

    申请日:1994-03-18

    IPC分类号: C08G73/10 G02F1/1337

    摘要: A liquid crystal device is constituted by a pair of substrates each provided with a transparent electrode, and a liquid crystal disposed between the substrates; at least one of said pair of substrates having thereon an alignment film comprising (i) a polyimide including principally a recurring unit of the following structural formula (I): ##STR1## wherein R.sub.11 denotes a tetravalent organic group, and R.sub.12 and R.sub.13 denote the same or different alkyl or perfluoroalkyl groups having 1-10 carbon atoms, and also at most 20 mol. % of a recurring monoamine unit of the following structural formula (II): ##STR2## wherein R.sub.21 and R.sub.22 denote the same or different alkyl or perfluoroalkyl groups having 1-10 carbon atoms, and X denotes an aromatic group, a heterocyclic group or a derivative group thereof; or (ii) a polyimide obtained through a reaction of at least two species of tetracarboxylic anhydrides of the following formula (III): ##STR3## wherein R.sub.31 denotes a tetravalent organic group, and a diamine of the following formula (IV): ##STR4## wherein R.sub.41 and R.sub.42 denote the same or different alkyl or perfluoroalkyl groups having 1-10 carbon atoms.

    摘要翻译: 液晶装置由分别设置有透明电极的一对基板和设置在基板之间的液晶构成, 所述一对衬底中的至少一个具有取向膜,所述取向膜包含(i)主要包含以下结构式(I)的重复单元的聚酰亚胺:其中R 11表示四价有机基团,R 12和 R13表示相同或不同的具有1-10个碳原子,最多20mol的烷基或全氟烷基。 %结构式(II)的重复单胺单元:其中R 21和R 22表示具有1-10个碳原子的相同或不同的烷基或全氟烷基,X表示芳族基团,杂环基 基团或其衍生基团; 或(ii)通过至少两种下列通式(III)的四羧酸酐的有机基团反应获得的聚酰亚胺和下式(Ⅳ)的二胺:其中R41和 R42表示具有1-10个碳原子的相同或不同的烷基或全氟烷基。

    Electro-optical modulating apparatus and driving method thereof
    50.
    发明授权
    Electro-optical modulating apparatus and driving method thereof 失效
    电光调制装置及其驱动方法

    公开(公告)号:US5408246A

    公开(公告)日:1995-04-18

    申请号:US276598

    申请日:1994-07-18

    摘要: An electro-optical modulating system comprised of a liquid crystal device with a plurality of pixels each comprising a pair of opposite electrodes, and an optical modulating substance assuming a first molecular orientation state and a second molecular orientation state between the electrodes. The system further comprises voltage application circuit for applying to a pixel among said plurality of pixels a first voltage for resetting the pixel to be occupied with the first molecular orientation state, a second voltage for resetting the pixel into a mixture state, including a minor proportion of the first molecular orientation state and a major proportion of the second molecular orientation state, and then a third voltage for causing a prescribed ratio of the first to second molecular orientation state at the pixel not smaller than the ratio in the mixture state.

    摘要翻译: 一种电光调制系统,包括具有多个像素的液晶装置,每个像素包括一对相对的电极,以及在电极之间呈现第一分子取向状态和第二分子取向状态的光学调制物质。 该系统还包括电压施加电路,用于将所述多个像素中的像素施加第一电压,用于将第一分子取向状态下的待占用像素复位,用于将像素复位为混合状态的第二电压,包括次要比例 的第一分子取向状态和第二分子取向状态的主要比例,然后是第三电压,用于在不小于混合状态的比率的像素处引起第一至第二分子取向状态的规定比例。