公开(公告)号：US20100207090A1

公开(公告)日：2010-08-19

申请号：US12733295

申请日：2008-06-13

申请人： Junji Tominaga ,  James Paul Fons ,  Alexander Kolobov

发明人： Junji Tominaga ,  James Paul Fons ,  Alexander Kolobov

IPC分类号： H01L45/00

CPC分类号： G11C13/0004 ,  B82Y10/00 ,  G11B7/2433 ,  G11B2007/24314 ,  G11B2007/24316 ,  H01L29/15 ,  H01L29/18 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1625

摘要： In one embodiment of the present invention, recording and erasing of data in PRAM have hitherto been performed based on a change in physical characteristics caused by primary phase-transformation of a crystalline state and an amorphous state of a chalcogen compound including Te which serves as a recording material. Since, however, a recording thin film is formed of a polycrystal but not a single crystal, a variation in resistance values occurs and a change in volume caused upon phase-transition has placed a limit on the number of times of readout of the record. The above problem is solved by preparing a solid memory having a superlattice structure with a thin film containing Sb and a thin film containing Te. The solid memory can realize the number of times of repeated recording and erasing of 1015.

摘要翻译： 在本发明的一个实施例中，迄今为止，已经基于由结晶态的初相相变和包括Te的硫族元素化合物的无定形状态引起的物理特性的变化来执行PRAM中的数据的记录和擦除 录音材料。 然而，由于记录薄膜由多晶而不是单晶形成，所以发生电阻值的变化，并且相变所导致的体积变化对记录的读出次数设定了限制。 通过制备具有含有Sb的薄膜和含有Te的薄膜的超晶格结构的固态存储器来解决上述问题。 固态存储器可以实现1015次重复记录和擦除次数。

公开(公告)号：US07651793B2

公开(公告)日：2010-01-26

申请号：US10529044

申请日：2003-09-24

申请人： Joo-Ho Kim ,  Junji Tominaga

发明人： Joo-Ho Kim ,  Junji Tominaga

IPC分类号： G11B11/105

CPC分类号： B82Y10/00 ,  G11B7/24 ,  G11B7/258 ,  G11B2007/24312 ,  G11B2007/24314 ,  G11B2007/24316

摘要： A high density recording medium with a super-resolution near-field structure including a mask layer comprising high melting point metal oxide or silicon oxide. A high density recording medium with a super-resolution near-field structure includes a sequential stack of a second dielectric layer, a recording layer, a protective layer, a mask layer, a first dielectric layer, and a polycarbonate layer, wherein the mask layer comprises high melting point metal oxide or silicon oxide to generate a near field by optically or thermally inducing physical changes in the crystalline structure and optical properties of the high melting point metal oxide or silicon oxide.

摘要翻译： 一种具有包括高熔点金属氧化物或氧化硅的掩模层的超分辨率近场结构的高密度记录介质。 具有超分辨率近场结构的高密度记录介质包括第二介电层，记录层，保护层，掩模层，第一介电层和聚碳酸酯层的顺序堆叠，其中掩模层 包括高熔点金属氧化物或氧化硅，以通过光学或热诱导高熔点金属氧化物或氧化硅的晶体结构和光学性质的物理变化产生近场。

公开(公告)号：US20090027668A1

公开(公告)日：2009-01-29

申请号：US11883405

申请日：2006-01-26

申请人： Makoto Fujimaki ,  Junji Tominaga ,  Yasuhiko Iwanabe

发明人： Makoto Fujimaki ,  Junji Tominaga ,  Yasuhiko Iwanabe

IPC分类号： G01J3/44

CPC分类号： G01N21/658 ,  G01N21/65 ,  G01N2021/651

摘要： The present invention aims to provide a chip applied to a molecular sensing device which carries out Raman spectroscopic analysis utilizing Raman scattering enhancement due to plasmons, and that achieves higher sensitivity and stability of its sensing sensitivity and miniaturization, and to provide a molecular sensing device including the chip. As the chip for Raman scattering enhancement applied to the molecular sensing device using the Raman spectroscopic analysis, which has an excitation light source for Raman scattering, a chip for Raman scattering enhancement and a photodetector for observing the Raman scattering, the present invention employs a chip having a molecular detecting element in which a transparent protection material thin film 32 composed of a dielectric material thin film or semiconducting material thin film is formed on a thin film 31 containing the noble metal oxide, and utilizes the Raman scattering enhancement by the thin film containing the noble metal oxide.

摘要翻译： 本发明旨在提供一种应用于分子感测装置的芯片，其利用等离子体激元进行拉曼光谱分析，利用拉曼散射增强，并且实现其感测灵敏度和小型化的更高的灵敏度和稳定性，并且提供一种分子感测装置，包括 芯片。 作为使用拉曼散射用激发光源的拉曼光谱分析法使用拉曼散射增强用芯片和用于观察拉曼散射的光检测器的拉曼散射增强用芯片，本发明采用芯片 具有分子检测元件，其中在包含贵金属氧化物的薄膜31上形成由介电材料薄膜或半导体材料薄膜构成的透明保护材料薄膜32，并利用包含 贵金属氧化物。

公开(公告)号：US20050207327A1

公开(公告)日：2005-09-22

申请号：US10509367

申请日：2003-03-28

申请人： Joo-Ho Kim ,  Junji Tominaga

发明人： Joo-Ho Kim ,  Junji Tominaga

IPC分类号： G11B7/0037 ,  G11B7/004 ,  G11B7/0045 ,  G11B7/24 ,  G11B7/243 ,  G11B7/257 ,  G11B7/26 ,  G11B11/105

CPC分类号： G11B7/00454 ,  B82Y10/00 ,  G11B7/24065 ,  G11B7/243 ,  G11B7/257 ,  G11B11/10504 ,  G11B11/10515 ,  G11B11/10528 ,  G11B11/10584 ,  G11B11/10593 ,  G11B11/10597

摘要： A phase change and/or magneto-optical recording method using laser induced reaction and diffraction in a recording layer and a dielectric layer of a recording medium involves changing absorption coefficients of optical constants of a recording layer and a dielectric layer of a recording medium by laser induced reaction and diffusion. The magneto-optical recording method involves changing the magnetization direction in a recording layer while the recording layer and a dielectric layer of a recording medium are irradiated with a laser inducing reaction and diffusion therein.

摘要翻译： 在记录介质的记录层和电介质层中使用激光诱导反应和衍射的相变和/或磁光记录方法包括通过激光改变记录层和介质层的光学常数的吸收系数 诱导反应和扩散。 磁光记录方法包括改变记录层中的磁化方向，同时用记录介质层和记录介质的电介质层照射其中的激光引发反应和扩散。

公开(公告)号：US5569517A

公开(公告)日：1996-10-29

申请号：US462286

申请日：1995-06-05

申请人： Junji Tominaga ,  Susumu Haratani ,  Ryo Inaba ,  Tsuneo Kuwahara

发明人： Junji Tominaga ,  Susumu Haratani ,  Ryo Inaba ,  Tsuneo Kuwahara

IPC分类号： G11B7/0045 ,  G11B7/005 ,  G11B7/006 ,  G11B7/24 ,  G11B7/243 ,  G11B7/257 ,  G11B11/10 ,  G11B11/105 ,  B32B3/00

CPC分类号： G11B7/00454 ,  G11B7/24 ,  G11B7/243 ,  G11B7/257 ,  G11B11/10515 ,  G11B11/10584 ,  G11B11/10593 ,  G11B2007/24304 ,  G11B2007/24308 ,  G11B2007/24312 ,  G11B2007/24314 ,  G11B2007/24316 ,  G11B7/0062 ,  Y10S428/913 ,  Y10S430/146 ,  Y10T428/21

摘要： An optical information medium has on a substrate (2) with information-carrying pits (21), a light transmittance control layer (3) including a lower dielectric layer (31), a mask layer (32) and an upper dielectric layer (33). The mask layer has an original state before irradiation of reading light. Upon irradiation of a reading light beam to define a beam spot, the mask layer undergoes a crystal-to-crystal transition in a region (H) of the beam spot depending on the intensity distribution of the beam spot. Multiple reflection condition changes in the transition portion so that the beam spot contributing to read-out is limited to the transition or transition-free region (H or L). The transition temperature is in the range of 200.degree. to 450.degree. C. The mask layer returns to the original state after passage of the beam spot. The invention is also applicable to an optical recording medium having a recording layer above or below the transmittance control layer.

摘要翻译： 光信息介质在具有信息输送凹坑（21）的基板（2）上，具有下介电层（31），掩模层（32）和上介电层（33）的透光控制层（3） ）。 掩模层在读取光照射之前具有原始状态。 在照射读取光束以限定束斑时，掩模层根据束斑的强度分布在束斑的区域（H）中经历晶体到晶体的转变。 过渡部分中的多重反射条件发生变化，使得有助于读出的光束点被限制在过渡或过渡区域（H或L）。 转变温度在200〜450℃的范围内。通过光斑后，掩模层返回到原始状态。 本发明也可应用于具有在透光控制层之上或之下的记录层的光记录介质。

公开(公告)号：US5523140A

公开(公告)日：1996-06-04

申请号：US400765

申请日：1995-03-08

申请人： Junji Tominaga ,  Tokuhiko Handa ,  Susumu Haratani ,  Ryo Inaba

发明人： Junji Tominaga ,  Tokuhiko Handa ,  Susumu Haratani ,  Ryo Inaba

IPC分类号： B41M5/26 ,  G11B7/00 ,  G11B7/0045 ,  G11B7/243 ,  B32B3/00

CPC分类号： G11B7/243 ,  G11B7/00454 ,  G11B2007/24308 ,  G11B2007/24314 ,  G11B2007/24316 ,  Y10S428/913 ,  Y10S430/146 ,  Y10T428/21

摘要： A phase change type optical recording medium has a recording layer of a recording material containing elements A, B, and C wherein A is Ag and/or Au, B is Sb and/or Bi, and C is Te and/or Se. Information is recorded by directing a light beam to the recording layer to form recorded marks therein such that the recorded marks are amorphous or microcrystalline while an unrecorded portion of the recording layer remains crystalline, and the A concentration of the unrecorded portion is at least 0.5 atom % higher than the A concentration of the recorded marks. C/N and modulation factor are improved and such improvements are kept even after hot humid storage.

摘要翻译： 相变型光学记录介质具有记录材料的记录层，其中A，B和C元素A，B和C中的A是Ag和/或Au，B是Sb和/或Bi，C是Te和/或Se。 通过将光束引导到记录层以在其中形成记录标记来记录信息，使得记录的标记是非晶或微晶的，而记录层的未记录部分保持结晶，并且未记录部分的A浓度为至少0.5原子 高于记录标记的A浓度％。 C / N和调制因子得到改善，即使在潮湿潮湿储存之后也能保持这样的改善。

公开(公告)号：US5418030A

公开(公告)日：1995-05-23

申请号：US74447

申请日：1993-06-10

申请人： Junji Tominaga ,  Susumu Haratani ,  Tokuhiko Handa

发明人： Junji Tominaga ,  Susumu Haratani ,  Tokuhiko Handa

IPC分类号： B41M5/26 ,  G11B7/24 ,  G11B7/243 ,  G11B7/257 ,  G11B7/258 ,  G11B7/26 ,  B32B3/00

CPC分类号： G11B7/243 ,  G11B2007/24306 ,  G11B2007/24308 ,  G11B2007/2431 ,  G11B2007/24314 ,  G11B2007/24316 ,  G11B7/2542 ,  G11B7/257 ,  G11B7/258 ,  Y10S428/913 ,  Y10S430/146 ,  Y10T428/31678

摘要： In an optical recording medium comprising a recording layer on a substrate, the recording layer contains a recording material which consists essentially of A, B, C, MI, and MII wherein A is Ag and/or Au, B is In, C is Te and/or Se, MI is Sb and/or Bi, and MII is at least one element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Mn, W and Mo, the atomic ratio of the respective elements being represented by the formula:[(A.sub.a B.sub.b C.sub.1-a-b).sub.x MI.sub.1-x ].sub.1-y MII.sub.ywherein 0.01.ltoreq.a

摘要翻译： 在包括基板上的记录层的光记录介质中，记录层包含基本由A，B，C，MI和MII组成的记录材料，其中A为Ag和/或Au，B为In，C为Te 和/或Se，MI为Sb和/或Bi，MII为选自Ti，Zr，Hf，V，Nb，Ta，Mn，W和Mo中的至少一种元素，各自的原子比 元素由下式表示：[（AaBbC1-ab）xMI1-x] 1-yMIIy其中0.01

公开(公告)号：US09129673B2

公开(公告)日：2015-09-08

申请号：US13138545

申请日：2010-02-24

申请人： Junji Tominaga ,  Paul Fons ,  Alexander Kolobov

发明人： Junji Tominaga ,  Paul Fons ,  Alexander Kolobov

IPC分类号： H01L45/00 ,  G11C13/00

CPC分类号： G11C13/0004 ,  H01L45/065 ,  H01L45/1233 ,  H01L45/148 ,  H01L45/1625

摘要： A solid-state memory that requires a lower current during recording and erasing data and can repeatedly rewrite data an increased number of times. In at least one example embodiment, the solid-state memory includes a recording layer that includes a laminated structure in which electric properties are changed in response to a phase separation. The laminated structure includes a film containing an Sb atom(s) and a film containing a Ge atom(s), which films constitute a superlattice structure. In the laminated structure, phase separation of the film containing the Sb atom and the film containing the Ge atom allows data to be recorded and erased efficiently.

摘要翻译： 固态存储器在记录和擦除数据期间需要较低的电流，并可以重复地重写数据次数。 在至少一个示例性实施例中，固态存储器包括记录层，其包括电性能响应于相分离而改变的叠层结构。 层叠结构包括含有Sb原子的膜和含有Ge原子的膜，该膜构成超晶格结构。 在层叠结构中，含有Sb原子的膜和含有锗原子的膜的相分离允许有效地记录和擦除数据。

公开(公告)号：US20100142362A1

公开(公告)日：2010-06-10

申请号：US12088216

申请日：2006-09-25

申请人： Kazuma Kurihara ,  Yuzo Yamakawa ,  Takashi Nakano ,  Junji Tominaga

发明人： Kazuma Kurihara ,  Yuzo Yamakawa ,  Takashi Nakano ,  Junji Tominaga

IPC分类号： G11B7/24 ,  G11B20/00

CPC分类号： G11B7/24079 ,  G11B7/0901 ,  G11B7/24085

摘要： When a method for increasing density by providing a tracking guide such as a land/groove and introducing a plurality of strings of super-resolution pits into one track thereof is applied to a reproduction-dedicated optical disk, there are problems in that the production cost is increased, the structure is complicated, and the space which can be used for a recording pits is narrowed because of the land/groove structure.In the invention, a concept of group tracking is applied. One track is formed by a plurality of pit strings having a size not greater than the optical resolution limit in the radial direction and a size not less than or not greater than the optical resolution limit or only not greater than the optical resolution limit in the tangential direction. Reproduction of the super-resolution pit itself is performed by using a non-linear phenomenon generated locally, but, in tracking, a plurality of strings of pits are considered to be one track, and detection of the movement of a laser light for read out is realized by the method used for an existing optical disk by using a reflected light or a transmitted light from the optical disk.

摘要翻译： 当通过提供诸如平台/凹槽的跟踪引导件和将多个超分辨率凹坑串引入其一个轨道中的密度增加的方法被应用于再现专用光盘时，存在生产成本 增加，结构复杂，可以用于记录坑的空间由于槽脊/槽结构而变窄。 在本发明中，应用了组跟踪的概念。 一个轨迹由具有不大于径向的光学分辨率极限的尺寸的多个凹坑串形成，并且尺寸不小于或不大于光学分辨率极限，或者不大于切向中的光学分辨率极限 方向。 通过使用局部产生的非线性现象来实现超分辨率凹坑本身的再现，但是在跟踪中，多个凹坑串被认为是一个轨道，并且检测用于读出的激光的移动 通过使用来自光盘的反射光或透射光通过用于现有光盘的方法来实现。

公开(公告)号：US07078072B1

公开(公告)日：2006-07-18

申请号：US09913315

申请日：2000-03-31

申请人： Takashi Hiraga ,  Tetsuo Moriya ,  Qiying Chen ,  Junji Tominaga ,  Nobufumi Atoda ,  Norio Tanaka ,  Hiromitsu Yanagimoto ,  Ichiro Ueno ,  Koji Tsujita

发明人： Takashi Hiraga ,  Tetsuo Moriya ,  Qiying Chen ,  Junji Tominaga ,  Nobufumi Atoda ,  Norio Tanaka ,  Hiromitsu Yanagimoto ,  Ichiro Ueno ,  Koji Tsujita

IPC分类号： B32B7/38 ,  C23C16/00

CPC分类号： C23C14/12 ,  C23C14/24 ,  C23C14/562 ,  C23C14/566

摘要： An organic compound having an affinity for a resin of a molded resin article and sublimation properties is allowed to penetrate/disperse into the surface of the molded resin article, thereby modifying and/or coloring a resin surface layer. The molded resin article and the organic compound having the affinity for the resin and the sublimation properties are put into a tightly closable container, and the pressure and the temperature in the container are adjusted to place them in a saturated sublimation pressure state of the organic compound, whereby a vapor of the organic compound is uniformly deposited on the surface of the molded resin article and it further penetrates/disperses into the resin surface layer, and in consequence, the resin surface layer can be modified and/or colored. In addition, the modification of the resin surface layer permits imparting a function thereto.

摘要翻译： 对模塑树脂制品的树脂具有亲和性的有机化合物和升华性能被允许渗透/分散到模制树脂制品的表面中，从而改性和/或着色树脂表面层。 将树脂成型品和对树脂具有亲和性的有机化合物和升华性进入紧密封闭的容器中，调节容器内的压力和温度，使其成为有机化合物的饱和升华压力状态 由此，有机化合物的蒸气均匀地沉积在模制树脂制品的表面上，并且进一步渗透/分散到树脂表面层中，因此树脂表面层可以被改性和/或着色。 此外，树脂表面层的改性允许赋予其功能。