公开(公告)号：US08110865B2

公开(公告)日：2012-02-07

申请号：US12888140

申请日：2010-09-22

申请人： Masayuki Tanaka ,  Daisuke Nishida ,  Ryota Fujitsuka ,  Katsuyuki Sekine ,  Akihito Yamamoto ,  Katsuaki Natori ,  Yoshio Ozawa

发明人： Masayuki Tanaka ,  Daisuke Nishida ,  Ryota Fujitsuka ,  Katsuyuki Sekine ,  Akihito Yamamoto ,  Katsuaki Natori ,  Yoshio Ozawa

IPC分类号： H01L29/788

CPC分类号： H01L29/42324 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/7883

摘要： A semiconductor device includes a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the second insulating film, the second insulating film including a lower silicon nitride film, a lower silicon oxide film formed on the lower silicon nitride film, an intermediate insulating film formed on the lower silicon oxide film and containing a metal element, the intermediate insulating film having a relative dielectric constant of greater than 7, an upper silicon oxide film formed on the intermediate insulating film, and an upper silicon nitride film formed on the upper silicon oxide film.

摘要翻译： 半导体器件包括半导体衬底，形成在半导体衬底上的第一绝缘膜，形成在第一绝缘膜上的电荷存储层，形成在电荷存储层上的第二绝缘膜，以及形成在第二绝缘膜上的控制电极 ，所述第二绝缘膜包括下氮化硅膜，形成在所述下氮化硅膜上的下氧化硅膜，形成在所述下氧化硅膜上并含有金属元素的中间绝缘膜，所述中间绝缘膜具有相对电介质 大于7的常数，形成在中间绝缘膜上的上部氧化硅膜和形成在上部氧化硅膜上的上部氮化硅膜。

公开(公告)号：US20100136780A1

公开(公告)日：2010-06-03

申请号：US12686005

申请日：2010-01-12

申请人： Katsuaki Natori ,  Masayuki Tanaka ,  Akihito Yamamoto ,  Katsuyuki Sekine ,  Ryota Fujitsuka ,  Daisuke Nishida ,  Yoshio Ozawa

发明人： Katsuaki Natori ,  Masayuki Tanaka ,  Akihito Yamamoto ,  Katsuyuki Sekine ,  Ryota Fujitsuka ,  Daisuke Nishida ,  Yoshio Ozawa

IPC分类号： H01L21/28

CPC分类号： H01L27/11568 ,  H01L27/115 ,  H01L27/11521

摘要： A method of manufacturing a semiconductor device comprising a first insulating film formed on a semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the second insulating film, wherein forming the second insulating film comprises forming an insulating film containing silicon using source gas not containing chlorine, and forming an insulating film containing oxygen and a metal element on the insulating film containing silicon.

摘要翻译： 一种制造半导体器件的方法，包括形成在半导体衬底上的第一绝缘膜，形成在第一绝缘膜上的电荷存储层，形成在电荷存储层上的第二绝缘膜，以及形成在第二绝缘膜上的控制电极 其中，形成所述第二绝缘膜包括使用不含氯的源气体形成含硅的绝缘膜，以及在含有硅的绝缘膜上形成含有氧和金属元素的绝缘膜。

公开(公告)号：US07612404B2

公开(公告)日：2009-11-03

申请号：US11783933

申请日：2007-04-13

申请人： Akihito Yamamoto ,  Masayuki Tanaka ,  Katsuyuki Sekine ,  Daisuke Nishida ,  Ryota Fujisuka ,  Katsuaki Natori ,  Hirokazu Ishida ,  Yoshio Ozawa

发明人： Akihito Yamamoto ,  Masayuki Tanaka ,  Katsuyuki Sekine ,  Daisuke Nishida ,  Ryota Fujisuka ,  Katsuaki Natori ,  Hirokazu Ishida ,  Yoshio Ozawa

IPC分类号： H01L29/788

CPC分类号： H01L29/7883 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42336 ,  H01L29/513

摘要： A semiconductor device includes semiconductor substrate, isolation insulating film, nonvolatile memory cells, each of the cells including tunnel insulating film, FG electrode, CG electrode, interelectrode insulating film between the CG and FG electrodes and including a first insulating film and a second insulating film on the first insulating film and having higher permittivity than the first insulating film, the interelectrode insulating film being provided on a side wall of the floating gate electrode in a cross-section view of a channel width direction of the cell, thickness of the interelectrode insulating film increasing from an upper portion of the side wall toward a lower portion of the side wall, thickness of the second insulating film on an upper corner of the FG electrode being thicker than thickness of the second insulating film on the other portions of the side wall in the cross-section view of the channel width direction.

摘要翻译： 半导体器件包括半导体衬底，隔离绝缘膜，非易失性存储单元，每个单元包括隧道绝缘膜，FG电极，CG电极，CG和FG电极之间的电极间绝缘膜，并且包括第一绝缘膜和第二绝缘膜 在第一绝缘膜上并且具有比第一绝缘膜高的介电常数，电极间绝缘膜设置在浮栅电极的侧壁上，在电池的沟道宽度方向的横截面图中，绝缘电极的绝缘层的厚度 膜从侧壁的上部向侧壁的下部增加，FG电极的上角上的第二绝缘膜的厚度比侧壁的其他部分上的第二绝缘膜的厚度厚 在通道宽度方向的横截面视图中。

公开(公告)号：US20070241388A1

公开(公告)日：2007-10-18

申请号：US11783933

申请日：2007-04-13

申请人： Akihito Yamamoto ,  Masayuki Tanaka ,  Katsuyuki Sekine ,  Daisuke Nishida ,  Ryota Fujitsuka ,  Katsuaki Natori ,  Hirokazu Ishida ,  Yoshio Ozawa

发明人： Akihito Yamamoto ,  Masayuki Tanaka ,  Katsuyuki Sekine ,  Daisuke Nishida ,  Ryota Fujitsuka ,  Katsuaki Natori ,  Hirokazu Ishida ,  Yoshio Ozawa

IPC分类号： H01L29/76

CPC分类号： H01L29/7883 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42336 ,  H01L29/513

摘要： A semiconductor device includes semiconductor substrate, isolation insulating film, nonvolatile memory cells, each of the cells including tunnel insulating film, FG electrode, CG electrode, interelectrode insulating film between the CG and FG electrodes and including a first insulating film and a second insulating film on the first insulating film and having higher permittivity than the first insulating film, the interelectrode insulating film being provided on a side wall of the floating gate electrode in a cross-section view of a channel width direction of the cell, thickness of the interelectrode insulating film increasing from an upper portion of the side wall toward a lower portion of the side wall, thickness of the second insulating film on an upper corner of the FG electrode being thicker than thickness of the second insulating film on the other portions of the side wall in the cross-section view of the channel width direction.

摘要翻译： 半导体器件包括半导体衬底，隔离绝缘膜，非易失性存储单元，每个单元包括隧道绝缘膜，FG电极，CG电极，CG和FG电极之间的电极间绝缘膜，并且包括第一绝缘膜和第二绝缘膜 在第一绝缘膜上并且具有比第一绝缘膜高的介电常数，电极间绝缘膜设置在浮栅电极的侧壁上，在电池的沟道宽度方向的横截面图中，绝缘电极的绝缘层的厚度 膜从侧壁的上部向侧壁的下部增加，FG电极的上角上的第二绝缘膜的厚度比侧壁的其他部分上的第二绝缘膜的厚度厚 在通道宽度方向的横截面视图中。

公开(公告)号：US20060046441A1

公开(公告)日：2006-03-02

申请号：US11211745

申请日：2005-08-26

申请人： Kiyotaka Miyano ,  Akihito Yamamoto ,  Yoshihiko Saito

发明人： Kiyotaka Miyano ,  Akihito Yamamoto ,  Yoshihiko Saito

IPC分类号： H01L21/20

CPC分类号： H01L29/7834 ,  C30B25/16 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/66628

摘要： According to the present invention, there is provided a selectivity monitoring method in a selective film growth method of selectively growing a film in a predetermined region on a semiconductor substrate, comprising: selectively growing the film on a surface of the semiconductor substrate while measuring temperature of the surface of the semiconductor substrate by at least one pyrometer placed in a non-contact state above the surface of the semiconductor substrate; and determining that selectivity of the growth of the film has decreased, when the temperature changes from a predetermined value or changes from a predetermined angle in a graph showing change of the temperature during film formation.

摘要翻译： 根据本发明，提供了选择性膜生长方法中选择性地生长半导体衬底上预定区域中的膜的选择性监测方法，包括：在半导体衬底的表面上选择性地生长膜，同时测量温度 所述半导体衬底的表面通过在所述半导体衬底的表面上方处于非接触状态的至少一个高温计; 并且当温度从预定值变化或者在显示成膜期间温度变化的曲线图中从预定角度改变时，确定膜生长的选择性已经降低。

公开(公告)号：US07954939B2

公开(公告)日：2011-06-07

申请号：US12360696

申请日：2009-01-27

申请人： Akihito Yamamoto ,  Yoshitsugu Tokai

发明人： Akihito Yamamoto ,  Yoshitsugu Tokai

IPC分类号： B41J2/01 ,  G03G15/00

CPC分类号： G03G15/652 ,  B41J11/0005 ,  G03G2215/00662

摘要： A decurling mechanism for performing a decurling process of correcting the curl of paper includes: a first roller; a second roller disposed travelably around the first roller; and a roller position changing mechanism for changing the second roller to a plurality of positions set on a traveling path of the second roller. The plurality of positions include a decurling position in which the decurling process to the paper is enabled and the paper is conveyed while being pinched between the first and second rollers, a conveyance position in which the decurling process to the paper is disabled and the paper is conveyed while being pinched between the first and second rollers and a pinch release position in which the paper is released from the pinch between the first and second rollers.

摘要翻译： 用于进行纸张卷曲的卷曲消除处理的卷曲消除机构包括：第一辊; 围绕第一辊布置的第二辊; 以及用于将第二辊改变为设置在第二辊的行进路径上的多个位置的辊位置改变机构。 多个位置包括一个卷曲消除位置，在该卷曲消除位置中纸张的卷曲消除处理能够进行，并且纸张在被夹在第一和第二辊子之间被输送的情况下，纸张的去卷积处理被禁用的传送位置和纸张是 在被夹持在第一和第二辊之间的同时传送，以及夹紧释放位置，其中纸从第一和第二辊之间的夹持松开。

公开(公告)号：US20090059372A1

公开(公告)日：2009-03-05

申请号：US12198337

申请日：2008-08-26

申请人： Takahiro Kawauchi ,  Akihito Yamamoto ,  Toru Sawada

发明人： Takahiro Kawauchi ,  Akihito Yamamoto ,  Toru Sawada

IPC分类号： G02B27/64

CPC分类号： G02B7/023 ,  G02B27/64

摘要： Disclosed is an optical image stabilizer having a low sliding load, a smooth operation, and a small thickness. When a lens holder and an X slider are moved in the X direction, small balls roll between the side surface of the lens holder and the inner surface of a frame of a Y slider, thereby reducing a sliding load therebetween. When the lens holder and the Y slider are moved in the X direction, small balls roll between the side surface of the lens holder and the inner surface of the frame of the X slider, thereby reducing a sliding load therebetween. Therefore, it is possible to achieve an optical image stabilizer having low power consumption, a smooth operation, and high responsibility. In addition, the thickness of the lens holder is equal to or smaller than the sum of the thicknesses of the X slider and the Y slider overlapped with each other. Therefore, it is possible to achieve an optical image stabilizer having a small thickness.

摘要翻译： 公开了具有低滑动负载，平滑操作和小厚度的光学图像稳定器。 当透镜支架和X滑块在X方向上移动时，小球在透镜保持器的侧表面和Y滑块的框架的内表面之间滚动，从而减小它们之间的滑动负载。 当透镜架和Y滑块沿X方向移动时，小球在透镜架的侧表面和X滑块的框架的内表面之间滚动，从而减小它们之间的滑动负载。 因此，可以实现低功耗，平稳运行和高责任度的光学图像稳定器。 此外，透镜保持器的厚度等于或小于X滑块和Y滑块彼此重叠的厚度之和。 因此，可以实现厚度小的光学图像稳定器。

公开(公告)号：US07065469B2

公开(公告)日：2006-06-20

申请号：US10390698

申请日：2003-03-19

申请人： Shuichi Samata ,  Takeo Furuhata ,  Yukihiro Ushiku ,  Akihito Yamamoto ,  Takashi Nakao

发明人： Shuichi Samata ,  Takeo Furuhata ,  Yukihiro Ushiku ,  Akihito Yamamoto ,  Takashi Nakao

IPC分类号： G01M7/02

CPC分类号： G01M15/12 ,  G05B23/0221 ,  G05B23/0283

摘要： A manufacturing apparatus which includes a rotary machine, includes: a plurality of accelerometers configured to measure diagnosis time series data attached to the rotary machine at locations where variations of the rotary machine are different; a frequency analysis device configured to perform a frequency analysis on the diagnosis time series data measured by the plurality of accelerometers; a time series data recording module configured to generate diagnosis data based on variations in characteristics of vibration corresponding to an analysis target frequency and to record the diagnosis data; and a life prediction unit configured to analyze the diagnosis data to determine a life span of the rotary machine.

摘要翻译： 一种包括旋转机器的制造装置，包括：多个加速度计，被配置为在旋转机器的变化不同的位置处测量附接到旋转机器的诊断时间序列数据; 频率分析装置，被配置为对由所述多个加速度计测量的诊断时间序列数据执行频率分析; 时间序列数据记录模块，被配置为基于与分析目标频率相对应的振动特性的变化产生诊断数据并记录诊断数据; 以及寿命预测单元，其构造成分析所述诊断数据以确定所述旋转机器的寿命。

公开(公告)号：US06989281B2

公开(公告)日：2006-01-24

申请号：US10957609

申请日：2004-10-05

申请人： Akihito Yamamoto ,  Takashi Nakao ,  Yuuichi Mikata ,  Yoshitaka Tsunashima

发明人： Akihito Yamamoto ,  Takashi Nakao ,  Yuuichi Mikata ,  Yoshitaka Tsunashima

IPC分类号： H01L21/00

CPC分类号： H01L21/67253

摘要： A cleaning method for a semiconductor device manufacturing apparatus includes a process of forming a film on a subject piece in a processing chamber, applying light having a predetermined wavelength to a monitoring section to indirectly monitor a thickness of a film formed on the subject piece, introducing cleaning gas capable of removing a substance deposited on the monitoring section into the processing chamber, measuring a reflection light which is the application light reflected near the monitoring section, measuring an amount of a substance corresponding to a thickness of a film deposited on the monitoring section based on a measurement result of the reflection light; and introducing, into the processing chamber, a cleaning gas which can remove the substance on the monitoring section until a measurement value of the amount of the substance on the monitoring section becomes zero.

摘要翻译： 半导体器件制造装置的清洁方法包括在处理室中的被检体上形成膜的处理，将具有预定波长的光施加到监视部分，以间接监视形成在被检体上的膜的厚度，引入 清除气体，其能够将沉积在监测部分上的物质去除到处理室中，测量作为在监测部分附近反射的应用光的反射光，测量与沉积在监测部分上的膜的厚度相对应的物质的量 基于反射光的测量结果; 并且在所述处理室内引入能够去除所述监测部件上的物质直到所述监测部件上的物质的量的测量值变为零的清洁气体。

公开(公告)号：US20060008583A1

公开(公告)日：2006-01-12

申请号：US11204079

申请日：2005-08-16

申请人： Takashi Shimizu ,  Akihito Yamamoto

发明人： Takashi Shimizu ,  Akihito Yamamoto

IPC分类号： C03C23/00 ,  B08B7/04 ,  C23C16/00

CPC分类号： C23C16/455 ,  C23C16/4405 ,  C23C16/52

摘要： A cleaning method for use in an apparatus for manufacturing a semiconductor device includes: measuring components and concentration of each component of gas in a process chamber of an apparatus for manufacturing a semiconductor device, or selected from a group including gas in the chamber, a process gas in a gas inlet pipe, and gas in a gas outlet pipe; performing a prescribed process on a substrate in the chamber, while adjusting the components and the concentration of each component of the process gas, and of an atmosphere in the chamber, on the basis of the values measured, and taking the substrate from the chamber after the process is subjected; and generating and applying a cleaning gas on the basis of the values measured, the cleaning gas having such components and such concentration as to remove residues.

摘要翻译： 一种用于制造半导体器件的设备的清洁方法，包括：测量半导体器件制造装置的处理室中的气体成分和浓度，或者选自包括室中的气体的组中的气体成分和浓度， 进气管中的气体和气体出口管中的气体; 在室内的基板上进行规定的处理，同时基于所测量的值调节处理气体的各成分和室内的气氛的成分和浓度，并从室后取出基板 该过程受到影响 基于所测量的值产生和施加清洁气体，具有这种组分的清洁气体和除去残留物的浓度。