公开(公告)号：US20190214262A1

公开(公告)日：2019-07-11

申请号：US16357800

申请日：2019-03-19

Applicant: Mattson Technology, Inc.

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/30 ,  H01L21/3213 ,  H01L21/311 ,  B01D67/00 ,  C23C16/452 ,  C23F1/12 ,  H01L21/302

Abstract: Surface treatment processes for treating a workpiece with organic radicals are provided. In one example implementation, a method for processing a workpiece having a semiconductor material and a carbon containing layer (e.g., photoresist) can include a surface treatment process on the workpiece. The surface treatment process can include generating one or more species in a first chamber (e.g., a plasma chamber). The surface treatment process can include mixing one or more hydrocarbon radicals with the species to create a mixture. The surface treatment process can include exposing the carbon containing layer to the mixture in a second chamber (e.g., a processing chamber).

公开(公告)号：US10269574B1

公开(公告)日：2019-04-23

申请号：US15958601

申请日：2018-04-20

Applicant: Mattson Technology, Inc.

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/30 ,  B01D67/00 ,  C23F1/12 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/302 ,  C23C16/452

Abstract: Surface treatment processes for treating a workpiece with organic radicals are provided. In one example implementation, a method for processing a workpiece having a semiconductor material and a carbon containing layer (e.g., photoresist) can include a surface treatment process on the workpiece. The surface treatment process can include generating one or more species in a first chamber (e.g., a plasma chamber). The surface treatment process can include mixing one or more hydrocarbon radicals with the species to create a mixture. The surface treatment process can include exposing the carbon containing layer to the mixture in a second chamber (e.g., a processing chamber).

公开(公告)号：US20190103280A1

公开(公告)日：2019-04-04

申请号：US15958601

申请日：2018-04-20

Applicant: Mattson Technology, Inc.

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/30 ,  C23C16/452 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/302

Abstract: Surface treatment processes for treating a workpiece with organic radicals are provided. In one example implementation, a method for processing a workpiece having a semiconductor material and a carbon containing layer (e.g., photoresist) can include a surface treatment process on the workpiece. The surface treatment process can include generating one or more species in a first chamber (e.g., a plasma chamber). The surface treatment process can include mixing one or more hydrocarbon radicals with the species to create a mixture. The surface treatment process can include exposing the carbon containing layer to the mixture in a second chamber (e.g., a processing chamber).

公开(公告)号：US20190103279A1

公开(公告)日：2019-04-04

申请号：US15958560

申请日：2018-04-20

Applicant: Mattson Technology, Inc.

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/30 ,  H01L21/02 ,  H01L21/311 ,  H01L21/302 ,  C23C16/452

CPC classification number: H01L21/3003 ,  B01D67/009 ,  C23C16/452 ,  C23F1/12 ,  H01J37/321 ,  H01J37/32743 ,  H01J37/32899 ,  H01J2237/006 ,  H01J2237/332 ,  H01L21/02118 ,  H01L21/02252 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/0271 ,  H01L21/302 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/76826

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include performing an organic radical based surface treatment process on a workpiece. The organic radical based surface treatment process can include generating one or more species in a first chamber. The surface treatment process can include mixing one or more hydrocarbon molecules with the species to create a mixture. The mixture can include one or more organic radicals. The surface treatment process can include exposing a semiconductor material on the workpiece to the mixture in a second chamber.