公开(公告)号：US20120037957A1

公开(公告)日：2012-02-16

申请号：US13264509

申请日：2010-04-30

申请人： Thomas J. Miller ,  Michael A. Haase ,  Xiaoguang Sun

发明人： Thomas J. Miller ,  Michael A. Haase ,  Xiaoguang Sun

IPC分类号： H01L29/06 ,  H01L29/22

CPC分类号： H01L33/0087 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02469 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02631 ,  H01L33/08 ,  H01L33/28 ,  H01L33/502

摘要： We have observed anomalous behavior of II-VI semiconductor devices grown on certain semiconductor substrates, and have determined that the anomalous behavior is likely the result of indium atoms from the substrate migrating into the II-V layers during growth. The indium can thus become an unintended dopant in one or more of the II-VI layers grown on the substrate, particularly layers that are close to the growth substrate, and can detrimentally impact device performance. We describe a variety of semiconductor constructions and techniques effective to deplete the migrating indium within a short distance in the growth layers, or to substantially prevent indium from migrating out of the substrate, or to otherwise substantially isolate functional II-VI layers from the migrating indium, so as to maintain good device performance.

摘要翻译： 我们已经观察到在某些半导体衬底上生长的II-VI半导体器件的异常行为，并且已经确定异常行为可能是在生长期间从衬底中的铟原子迁移到II-V层的结果。 因此，铟可以成为在衬底上生长的一个或多个II-VI层中的非预期掺杂剂，特别是靠近生长衬底的层，并且可能不利地影响器件性能。 我们描述了在生长层中短时间内有效去除迁移铟的各种半导体结构和技术，或者基本上防止铟从衬底迁移出来，或以其他方式实质上将功能性II-VI层与迁移铟 ，以保持良好的设备性能。

公开(公告)号：US20100155694A1

公开(公告)日：2010-06-24

申请号：US12715957

申请日：2010-03-02

申请人： Thomas J. Miller ,  Michael A. Haase ,  Terry L. Smith ,  Xiaoguang Sun

发明人： Thomas J. Miller ,  Michael A. Haase ,  Terry L. Smith ,  Xiaoguang Sun

IPC分类号： H01L33/04

CPC分类号： H01L33/08 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/14 ,  H01L2224/05541 ,  H01L2224/05005

摘要： An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.

摘要翻译： 提供了一种适配的LED，其包括短波长LED和再发射半导体结构，其中再发射半导体结构包括不位于pn结内的至少一个势阱。 势阱通常是量子阱。 适配的LED可以是白色或近白色的LED灯。 再发射半导体结构可以另外包括围绕或紧密或紧邻势阱的吸收层。 此外，提供了包括根据本发明的适配LED的图形显示装置和照明装置。

公开(公告)号：US20080272387A1

公开(公告)日：2008-11-06

申请号：US12174087

申请日：2008-07-16

申请人： Thomas J. Miller ,  Michael A. Haase ,  Terry L. Smith ,  Xiaoguang Sun

发明人： Thomas J. Miller ,  Michael A. Haase ,  Terry L. Smith ,  Xiaoguang Sun

IPC分类号： H01L33/00

CPC分类号： H01L33/08 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/14 ,  H01L2224/05541 ,  H01L2224/05005

摘要： An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.

摘要翻译： 提供了一种适配的LED，其包括短波长LED和再发射半导体结构，其中再发射半导体结构包括不位于pn结内的至少一个势阱。 势阱通常是量子阱。 适配的LED可以是白色或近白色的LED灯。 再发射半导体结构可以另外包括围绕或紧密或紧邻势阱的吸收层。 此外，提供了包括根据本发明的适配LED的图形显示装置和照明装置。

公开(公告)号：US6058123A

公开(公告)日：2000-05-02

申请号：US929221

申请日：1997-09-09

申请人： Michael A. Haase ,  Paul F. Baude ,  Thomas J. Miller

发明人： Michael A. Haase ,  Paul F. Baude ,  Thomas J. Miller

IPC分类号： H01L21/465 ,  H01S5/20 ,  H01S5/223 ,  H01S5/327 ,  H01S5/347 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01L21/465 ,  H01S5/327 ,  H01S5/209 ,  H01S5/2231 ,  H01S5/347

摘要： A II-VI semiconductor device is fabricated using a selective etchant in the form of aqueous solution of HX where X is Cl or Br. The II-VI semiconductor device is composed of a number of layers. Selective etching can be enabled by introducing Mg into one of the semiconductor layers. The resultant device may include a semiconductor layer containing Mg.

摘要翻译： 使用HX的水溶液形式的选择性蚀刻剂制造II-VI半导体器件，其中X是Cl或Br。 II-VI半导体器件由多层构成。 可以通过将Mg引入到半导体层之一来实现选择性蚀刻。 所得到的器件可以包括含Mg的半导体层。

公开(公告)号：US5879962A

公开(公告)日：1999-03-09

申请号：US571607

申请日：1995-12-13

申请人： James M. DePuydt ,  Michael A. Haase ,  Kwok-Keung Law ,  Thomas J. Miller ,  James M. Gaines ,  Supratik Guha ,  Bor-Jen Wu

发明人： James M. DePuydt ,  Michael A. Haase ,  Kwok-Keung Law ,  Thomas J. Miller ,  James M. Gaines ,  Supratik Guha ,  Bor-Jen Wu

IPC分类号： H01L21/363 ,  H01L21/443 ,  H01L33/00 ,  H01S5/00 ,  H01S5/347 ,  H01L21/00

CPC分类号： H01L33/0087 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02477 ,  H01L21/02502 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631 ,  H01L21/02661 ,  H01L21/443

摘要： A method for repeatably fabricating GaAs/ZnSe and other III-V/II-VI semiconductor interfaces with relatively low stacking fault densities in II-VI semiconductor devices such as laser diodes. The method includes providing a molecular beam epitaxy (MBE) system including at least a group III element source, a group II element source, a group V element source and a group VI element source. A semiconductor substrate having a III-V semiconductor surface on which the interface is to be fabricated is positioned within the MBE system. The substrate is then heated to a temperature suitable for III-V semiconductor growth, and a crystalline III-V semiconductor buffer layer grown on the III-V surface of the substrate. The temperature of the semiconductor substrate is then adjusted to a temperature suitable for II-VI semiconductor growth, and a crystalline II-VI semiconductor buffer layer grown on the III-V buffer layer by alternating beam epitaxy. The group II and group VI sources are operated to expose the III-V buffer layer to a group II element flux before exposing the III-V buffer layer to a group VI element flux.

摘要翻译： 一种用于在II-VI半导体器件（例如激光二极管）中重复制造GaAs / ZnSe和其他具有相对较低堆垛层错密度的III-V / II-VI半导体界面的方法。 该方法包括提供包括至少III族元素源，II族元素源，V族元素源和VI族元素源的分子束外延（MBE）系统。 具有要在其上制造界面的III-V半导体表面的半导体衬底位于MBE系统内。 然后将衬底加热到​​适于III-V半导体生长的温度，以及在衬底的III-V表面上生长的晶体III-V半导体缓冲层。 然后将半导体衬底的温度调节到适合于II-VI半导体生长的温度，以及通过交替射束外延在III-V缓冲层上生长的晶体II-VI半导体缓冲层。 在将III-V缓冲层暴露于VI族元素通量之前，组II和VI族源被操作以将III-V缓冲层暴露于II族元素通量。

公开(公告)号：US20110121319A1

公开(公告)日：2011-05-26

申请号：US12744553

申请日：2008-11-07

申请人： Michael A. Haase ,  Thomas J. Miller ,  Xiaoguang Sun

发明人： Michael A. Haase ,  Thomas J. Miller ,  Xiaoguang Sun

IPC分类号： H01L31/153 ,  H01L31/0336 ,  H01L31/18

CPC分类号： H01L33/08 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/34

摘要： Light emitting devices and methods of fabricating the same are disclosed. The light emitting device includes a light emitting diode (LED) that emits blue or UV light and is attached to a semiconductor construction. The semiconductor construction includes a re-emitting semiconductor construction that includes at least one layer of a II-VI compound and converts at least a portion of the emitted blue or UV light to longer wavelength light. The semiconductor construction further includes an etch-stop construction that includes an AlInAs or a GaInAs compound. The etch-stop is capable of withstanding an etchant that is capable of etching InP.

摘要翻译： 公开了发光器件及其制造方法。 发光器件包括发射蓝色或紫外光并附着到半导体结构的发光二极管（LED）。 半导体结构包括再发射半导体结构，其包括至少一层II-VI化合物，并将发射的蓝色或紫外光的至少一部分转换成更长波长的光。 该半导体结构还包括包括AlInAs或GaInAs化合物的蚀刻停止结构。 蚀刻停止能够承受能够蚀刻InP的蚀刻剂。

公开(公告)号：US07700938B2

公开(公告)日：2010-04-20

申请号：US12172549

申请日：2008-07-14

申请人： Thomas J. Miller ,  Michael A. Haase ,  Terry L. Smith ,  Xiaoguang Sun

发明人： Thomas J. Miller ,  Michael A. Haase ,  Terry L. Smith ,  Xiaoguang Sun

IPC分类号： H01L29/06

CPC分类号： H01L33/08 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/14 ,  H01L2224/05541 ,  H01L2224/05005

摘要： An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.

公开(公告)号：US20080272362A1

公开(公告)日：2008-11-06

申请号：US12172549

申请日：2008-07-14

申请人： Thomas J. Miller ,  Michael A. Haase ,  Terry L. Smith ,  Xiaoguang Sun

发明人： Thomas J. Miller ,  Michael A. Haase ,  Terry L. Smith ,  Xiaoguang Sun

IPC分类号： H01L33/00

CPC分类号： H01L33/08 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/14 ,  H01L2224/05541 ,  H01L2224/05005

摘要： An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.

摘要翻译： 提供了一种适配的LED，其包括短波长LED和再发射半导体结构，其中再发射半导体结构包括不位于pn结内的至少一个势阱。 势阱通常是量子阱。 适配的LED可以是白色或近白色的LED灯。 再发射半导体结构可以另外包括围绕或紧密或紧邻势阱的吸收层。 此外，提供了包括根据本发明的适配LED的图形显示装置和照明装置。

公开(公告)号：US07402831B2

公开(公告)日：2008-07-22

申请号：US11009217

申请日：2004-12-09

申请人： Thomas J. Miller ,  Michael A. Haase ,  Terry L. Smith ,  Xiaoguang Sun

发明人： Thomas J. Miller ,  Michael A. Haase ,  Terry L. Smith ,  Xiaoguang Sun

IPC分类号： H01L29/06

CPC分类号： H01L33/08 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/14 ,  H01L2224/05541 ,  H01L2224/05005

摘要： An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.

摘要翻译： 提供了一种适配的LED，其包括短波长LED和再发射半导体结构，其中再发射半导体结构包括不位于pn结内的至少一个势阱。 势阱通常是量子阱。 适配的LED可以是白色或近白色的LED灯。 再发射半导体结构可以另外包括围绕或紧密或紧邻势阱的吸收层。 此外，提供了包括根据本发明的适配LED的图形显示装置和照明装置。

公开(公告)号：US07126160B2

公开(公告)日：2006-10-24

申请号：US10871424

申请日：2004-06-18

申请人： Xiaoguang Sun ,  Thomas J. Miller ,  Michael A. Haase

发明人： Xiaoguang Sun ,  Thomas J. Miller ,  Michael A. Haase

IPC分类号： H01L33/00

CPC分类号： H01S5/183

摘要： A layered construction is provided comprising an InP substrate and alternating layers of II-VI and III-V materials. The alternating layers of II-VI and III-V materials are typically lattice-matched or pseudomorphic to the InP substrate. Typically the II-VI material is selected from the group consisting of ZnSe, CdSe, BeSe, MgSe, ZnTe, CdTe, BeTe, MgTe, ZnS, CdS, BeS, MgS and alloys thereof, more typically selected from the group consisting of CdZnSe, CdMgZnSe, BeZnTe, and BeMgZnTe alloys, and is most typically CdxZn1-xSe where x is between 0.44 and 0.54. Typically the III-V material is selected from the group consisting of InAs, AlAs, GaAs, InP, AlP, GaP, InSb, AlSb, GaSb, and alloys thereof, more typically selected from the group consisting of InP, InAlAs, GaInAs, AlInGaAs and GaInAsP alloys, and is most typically InP or InyAl1-yAs where y is between 0.44 and 0.52. In one embodiment, the layered construction forms one or more distributed Bragg reflectors (DBR's). In another aspect, the present invention provides a layered construction comprising: an InP substrate and a distributed Bragg reflector (DBR) having a reflectivity of 95% or greater which comprises no more than 15 layer pairs of epitaxial semiconductor materials. In another aspect, the present invention provides a laser comprising a layered construction according to the present invention. In another aspect, the present invention provides a photodetector comprising a layered construction according to the present invention.

摘要翻译： 提供了包括InP衬底和II-VI和III-V材料的交替层的分层结构。 II-VI和III-V材料的交替层通常与InP衬底晶格匹配或伪构。 通常，II-VI材料选自ZnSe，CdSe，BeSe，MgSe，ZnTe，CdTe，BeTe，MgTe，ZnS，CdS，BeS，MgS及其合金，更典型地选自CdZnSe， CdMgZnSe，BeZnTe和BeMgZnTe合金，并且最典型的是Cd x Zn 1-x Se，其中x在0.44和0.54之间。 通常，III-V材料选自InAs，AlAs，GaAs，InP，AlP，GaP，InSb，AlSb，GaSb及其合金，更典型地选自InP，InAlAs，GaInAs，AlInGaAs 和GaInAsP合金，并且最典型地是InP或Al y Al 1-y，其中y在0.44和0.52之间。 在一个实施例中，分层结构形成一个或多个分布式布拉格反射器（DBR）。 另一方面，本发明提供了一种分层结构，其包括：InP衬底和具有95％或更大的反射率的分布式布拉格反射器（DBR），其包括不超过15层的外延半导体材料。 另一方面，本发明提供一种包括根据本发明的分层结构的激光器。 另一方面，本发明提供了一种包括根据本发明的分层结构的光电检测器。