摘要:
A method and an apparatus for controlling voltage level and clock signal frequency supplied to a system. The method comprises: providing at least one reference circuit representative of a behavior of at least one estimated circuit, whereas the at least one estimated circuit includes transistors of multiple types; supplying at least one input signal to at least one reference circuits and monitoring a behavior of the at least one reference circuit one or more reference circuit; determining a characteristic of at least one output signal provided to the at least one estimated circuit; and providing at least one output signal to one or more estimated circuitsThe apparatus includes at least one reference circuit representative of a behavior of at least one estimated circuit, whereas the at least one estimated circuit includes transistors of multiple types; and monitoring circuitry adapted to monitor a behavior of at least one reference circuit and to determine a characteristic of at least one output signal provided to the at least one estimated circuit.
摘要:
A device and a method for biasing a transistor connected to a voltage converter, the method includes: (i) providing at least one bias voltage to at least one well of at least one transistor of a test circuitry; (ii) measuring at least one parameter of a test circuitry representative of at least one characteristic of the transistor and of at least one characteristic of the voltage converter; (iii) altering at least one bias voltage and repeating the stages of providing and measuring until a predefined control criteria is fulfilled; and (iv) providing a voltage bias to a well of the transistor in response to the measurements. The device includes: (i) at least one transistor; (ii) at least one voltage converter, connected to the at least one well of at least one transistor, for providing at least one bias voltage; (iii) a test circuitry, connected to the at least one voltage converter, adapted to: (a) measure at least one parameter of the test circuitry representative of at least one characteristic of the transistor and of at least one characteristic of the voltage converter; (b) alter at least one bias voltage provided to the test circuitry and measure at least one parameter, until a control criterion is fulfilled; and (c) determine, in response to the at least one measured parameter, at least bias voltage to be provided to at least one well of the at least one transistor.
摘要:
An electronic device comprises a secured module arranged to store secured data. A component outside the secured module has a normal operating mode with a normal mode operating voltage. An interface is arranged to provide access to the secured module. A voltage monitoring unit is connected to the component and arranged to monitor an operating voltage Vsup of the component. An interface control unit is connected to the voltage monitoring unit and the interface. The interface control unit is arranged to inhibit access to the secured module through the interface when the operating voltage is below a predetermined secure access voltage level, the secure access voltage being higher than the normal mode operating voltage.
摘要:
A method and a electronic circuit, the method includes: sending to a switching circuit, to a state retention power gating (SRPG) circuit and to a first power source a control signal indicating that the SRPG circuit should operate in a functional mode; coupling, by the switching circuit, a third power grid to a first power grid; supplying power from the first power source to the SRPG circuit via the first power grid, the switching circuit and the third power grid; supplying power from a second power source to a second circuit via a second power grid; sending to the switching circuit, to the SRPG circuit and to the first power source a control signal indicating that the SRPG circuit should operate in a state retention mode; coupling, by the switching circuit, the third power grid to the second power grid; supplying power from the second power source to the SRPG circuit via the second power grid, the switching circuit and the third power grid; supplying power from the second power source to the second circuit via the second power grid; and storing, by the SRPG state information.
摘要:
A memory unit comprises at least two volatile memory elements, analyzing circuitry and power gate. The memory elements may for example be latches, flip-flops, or registers. Each of the memory elements has at least two different states including a predefined reset state. The analyzing circuitry generates a power-down enable signal in response to each of the memory elements being in its reset state. The power gate powers down the memory elements in response to the power-down enable signal. The memory elements may be arranged to assume their reset states upon powering up the memory unit.
摘要:
A method for compensating a timing signal with which an outputting of data states of at least one data signal is synchronised. The method comprises receiving a current set of data states and a next set of data states, identifying state transitions between the current set of data states and the next set of data states, determining an amount of compensation to apply to the timing signal based at least partly on the state transitions identified between the current set of data states and the next set of data states, and applying the determined amount of compensation to the timing signal such that the compensation applies to the outputting of the next set of data states.
摘要:
A bypass capacitor circuit for an integrated circuit (IC) comprises one or more capacitive devices, each arranged in a segment of a seal ring area of a die, which comprises the IC. A method of providing a bypass capacitance for an IC comprises providing a semiconductor wafer device comprising a plurality of dies, each comprising an IC; arranging one or more capacitive devices in a seal ring area of at least one of the IC; dicing the semiconductor wafer device; in a test mode, for each of the one or more capacitive devices, enabling the capacitive device, determining an operability parameter value indicative of an operability of the capacitive device, and storing the operability parameter in a memory device; and in a normal operation mode, providing a bypass capacitance to the IC depending on a capacitance of one or more of the capacitive devices having an associated operability parameter value indicative of a non-defectiveness of the corresponding capacitive device.
摘要:
A method and an electronic circuit, the electronic circuit includes: a module that comprises multiple flip-flops and a control signal providing circuit; a power management circuit arranged to provide to the module a supply voltage of a functional level when the module is in a functional mode, and to provide to the module a supply voltage of an idle level when the module is in an idle mode; wherein the control signal providing circuit is arranged to provide to the multiple flip-flops, when the module is in the functional mode, a control signal that facilitates a state change of each of the multiple flip-flops; wherein the control signal providing circuit is arranged to provide to the multiple flip-flops, when the module is in the idle mode, a control signal that prevents a state change of each of the multiple flip-flops; wherein the each of the control signal providing circuit and a plurality of flip-flops of the multiple flip-flops comprises at least one hybrid circuit that comprises a low-threshold transistor that is coupled in parallel to at least one high-threshold transistor; wherein each hybrid circuit is arranged to maintain information or a control signal when provided with the supply voltage of the idle level; and wherein high-threshold transistors of each hybrid circuit are arranged to maintain information or a control signal when provided with a supply voltage of a level that is higher than the idle level.
摘要:
A device and method for power management. The method includes receiving an indication about a load of a circuit, determining at least one long-term activation parameter in view of a circuit load pattern during at least one long period; determining at least one short-term activation parameter in response to an expected short period load change of the circuit; and providing least one clock signal and at least one supply voltage in response to the long-term activation parameter and in response to the short-term supply parameter.
摘要:
A device for regulating a voltage supply to a semiconductor device, the device comprising memory for storing a plurality of performance ranges, wherein the respective performance ranges are associated with a respective supply voltage; means for measuring the performance of the semiconductor device; and a regulator for modifying the supply voltage to the semiconductor device if the measured performance of the semiconductor device is not within a predetermined portion of the performance range associated with the voltage supplied to the semiconductor device.