公开(公告)号：US20070103960A1

公开(公告)日：2007-05-10

申请号：US10579968

申请日：2004-11-24

申请人： Per Hamberg ,  Christer Karlsson ,  Per-Erik Nordal ,  Nicklas Ojakangas ,  Johan Carlsson ,  Hans Gudesen

发明人： Per Hamberg ,  Christer Karlsson ,  Per-Erik Nordal ,  Nicklas Ojakangas ,  Johan Carlsson ,  Hans Gudesen

IPC分类号： G11C11/22

CPC分类号： G11C11/22 ,  G06F12/0238 ,  G06F2212/1036 ,  G06F2212/7211 ,  G11C8/12 ,  G11C2013/0083

摘要： In a method for reducing detrimental phenomena related to disturb voltages in a data storage apparatus employing passive matrix addressing, particularly a memory device or a sensor device, an application of electric potentials conforming to an addressing operation is generally controlled in a time-coordinated manner according to a voltage pulse protocol. In an addressing operation a data storage cell is set to a first polarization state by means of a first active voltage pulse and then, dependent on the voltage pulse protocol, a second voltage pulse which may be a second active voltage pulse of opposite polarity to that of the first voltage pulse, is applied and used for switching the data storage cell to a second polarization state. The addressed cell is thus set to a predetermined polarization state as specified by the addressing operation. The data storage cells of the apparatus are provided in two or more electrically separated segments such that each segment comprises a separate physical address space for the apparatus. In an addressing operation the data are directed to a segment that is selected based on information on prior and/or scheduled applications of active voltage pulses to the segments.

摘要翻译： 在采用无源矩阵寻址的数据存储装置，特别是存储装置或传感器装置中减少与干扰电压有关的有害现象的方法中，通常按时间协调方式控制符合寻址操作的电位的应用， 到电压脉冲协议。 在寻址操作中，通过第一有效电压脉冲将数据存储单元设置为第一偏振状态，然后根据电压脉冲协议设置第二电压脉冲，该第二电压脉冲可以是具有相反极性的第二有源电压脉冲 的第一电压脉冲被施加并用于将数据存储单元切换到第二极化状态。 因此，所寻址的单元被设置为由寻址操作指定的预定极化状态。 设备的数据存储单元被提供在两个或更多个电分离的段中，使得每个段包括用于该设备的单独的物理地址空间。 在寻址操作中，数据被引导到基于关于有效电压脉冲到段的先前和/或预定应用的信息而被选择的段。

公开(公告)号：US20050151176A1

公开(公告)日：2005-07-14

申请号：US10504860

申请日：2003-02-11

申请人： Hans Gudesen ,  Per-Erik Nordal

发明人： Hans Gudesen ,  Per-Erik Nordal

IPC分类号： H01L27/105 ,  G11C11/22 ,  H01L21/8246 ,  H01L27/115 ,  H01L29/861 ,  H01L31/119

CPC分类号： H01L29/8615 ,  B82Y10/00 ,  G11C11/22 ,  H01L27/11502

摘要： In a ferroelectret or electret memory cell a polymeric memory material is a blend of two or more ploymeric materials, the polymeric material being provided contacting first and second electrodes. Each electrode is a composite multilayer comprising a first highly conducting layer and a conducting polymer layer, the latter forming a contact between the former and the memory material.

摘要翻译： 在铁电或驻极体记忆单元中，聚合物记忆材料是两种或更多种聚合物材料的混合物，所述聚合材料与第一和第二电极接触。 每个电极是包含第一高导电层和导电聚合物层的复合多层，后者形成前者和记忆材料之间的接触。

公开(公告)号：US20050073869A1

公开(公告)日：2005-04-07

申请号：US10659428

申请日：2003-09-11

申请人： Hans Gudesen ,  Per-Erik Nordal ,  Geirr Leistad ,  Per Broms ,  Per Sandstrom ,  Mats Johansson

发明人： Hans Gudesen ,  Per-Erik Nordal ,  Geirr Leistad ,  Per Broms ,  Per Sandstrom ,  Mats Johansson

IPC分类号： G11C11/22

CPC分类号： G11C11/22

摘要： A matrix-addressable ferroelectric or electret memory device and a method of operating are explained. The method includes applying a first plurality of voltage difference across a first and a second set of electrodes in the memory when data are read, and applying a second plurality of voltage differences when data are refreshed or rewritten. The first and second plurality of voltage differences correspond to sets of potential levels comprising time sequences of voltage pulses. At least one parameter indicative of a change in a memory cell response is used for determining at least one correction factor for the voltage pulses, whereby the pulse parameter is adjusted accordingly. The memory device comprises means for determining the at least one parameter, a calibration memory connected with means for determining the correction factor, and control circuits for adjusting pulse parameters as applied to read and write operations in the memory device.

公开(公告)号：US20060146589A1

公开(公告)日：2006-07-06

申请号：US11027977

申请日：2005-01-04

申请人： Christer Karlsson ,  Goran Gustafsson ,  Mats Johansson ,  Per Sandstrom ,  Per-Erik Nordal ,  Hans Gudesen ,  Johan Carlsson

发明人： Christer Karlsson ,  Goran Gustafsson ,  Mats Johansson ,  Per Sandstrom ,  Per-Erik Nordal ,  Hans Gudesen ,  Johan Carlsson

IPC分类号： G11C11/22

CPC分类号： G11C29/50 ,  G11C11/22

摘要： In a method for operating a passive matrix-addressable ferroelectric or electret memory device, a voltage pulse protocol based on a 1/3 voltage selection rule is used in order to keep disturb voltages at minimum, the voltage pulse protocol comprising cycles for read and write/erase bases on time sequence of voltage pulses with defined parameters. The method comprises a refresh procedure wherein cells for refresh are selected and refresh requests processed by a memory device controller, the refresh requests are monitored and processed in regard of ongoing or scheduled memory operations, and refresh voltage pulses with defined parameters are applied to the memory cells selected for refresh, while simultaneously ensuring that non-selected memory cells are subjected to zero voltage or voltages which do not affect the polarization state of these cells.

摘要翻译： 在用于操作无源矩阵寻址铁电或驻极体存储器件的方法中，使用基于1/3电压选择规则的电压脉冲协议以便将干扰电压保持在最小值，所述电压脉冲协议包括用于读取和写入的周期 根据具有定义参数的电压脉冲的时间顺序进行擦除。 该方法包括刷新过程，其中选择用于刷新的单元和由存储器件控制器处理的刷新请求，关于正在进行或调度的存储器操作来监视和处理刷新请求，并且将具有所定义参数的刷新电压脉冲施加到存储器 选择用于刷新的单元，同时确保未选择的存储单元经受不影响这些单元的极化状态的零电压或电压。

公开(公告)号：US06856715B1

公开(公告)日：2005-02-15

申请号：US09720084

申请日：2000-04-27

申请人： Thomas Ebbesen ,  Per-Erik Nordal

发明人： Thomas Ebbesen ,  Per-Erik Nordal

IPC分类号： D02G3/44 ,  G02B6/36 ,  G02B6/43 ,  H01L25/065 ,  H01L27/32 ,  H05K1/00 ,  G02B6/12

CPC分类号： D04B1/16 ,  D02G3/441 ,  D03D1/0088 ,  D03D9/00 ,  D03D15/00 ,  D03D15/0011 ,  D03D15/0027 ,  D03D15/0083 ,  D03D15/0088 ,  D03D15/02 ,  D03D27/00 ,  D04B21/16 ,  D10B2101/06 ,  D10B2101/20 ,  D10B2401/16 ,  D10B2401/20 ,  D10B2403/02431 ,  G02B6/3608 ,  G02B6/3628 ,  G02B6/43 ,  H01L25/065 ,  H01L27/32 ,  H01L2924/0002 ,  H01L2924/3011 ,  H05K1/038 ,  H05K1/189 ,  H05K2201/0281 ,  H01L2924/00

摘要： An apparatus/method for producing fabric-like electronic circuit patterns created by methodically joining electronic elements using textile fabrication-like methods in a predetermined arrangement.

公开(公告)号：US6031970A

公开(公告)日：2000-02-29

申请号：US29836

申请日：1998-07-01

申请人： Per-Erik Nordal ,  Terje Skotheim

发明人： Per-Erik Nordal ,  Terje Skotheim

IPC分类号： G01J3/10 ,  G01N21/01 ,  H05B3/10 ,  H05B3/14 ,  H05B3/20 ,  H05B3/00

CPC分类号： G01J3/108 ,  H05B3/145 ,  H05B3/20 ,  Y10S977/833 ,  Y10S977/891 ,  Y10S977/90 ,  Y10S977/901 ,  Y10S977/949 ,  Y10S977/954

摘要： An infrared radiation source for sensor and spectroscopic use has a thin, electrically conducting film adapted to emit infrared radiation when heated. The film is formed from a gas or vapor phase and includes a network of diamond-like carbon. Depending on the percentage of metal atoms in the film, the film may have metal atoms which are either distributed in the diamond-like carbon network or else form an additional metallic network. The metal may be tungsten, chromium, or titanium, and the film may include silicon and oxygen.

摘要翻译： PCT No.PCT / NO96 / 00216 Sec。 371日期：1998年7月1日 102（e）1998年7月1日PCT PCT 1996年9月6日PCT公布。 公开号WO97 / 09593 日期1997年3月13日用于传感器和光谱使用的红外辐射源具有薄的导电膜，其适于在加热时发射红外辐射。 该膜由气相或气相形成并且包括类金刚石碳的网络。 根据膜中金属原子的百分比，膜可以具有分布在类金刚石碳网络中的金属原子，或者形成额外的金属网络。 金属可以是钨，铬或钛，并且该膜可以包括硅和氧。

公开(公告)号：US06804139B2

公开(公告)日：2004-10-12

申请号：US10169381

申请日：2002-07-02

申请人： Per-Erik Nordal

发明人： Per-Erik Nordal

IPC分类号： G11C1122

CPC分类号： G11C11/22

摘要： A method for determining a logic state of a memory cell in a data storage device, wherein the cell stores data in the form of an electrical polarization state in a capacitor containing a polarizable material, includes applying a time-dependent small signal voltage over the capacitor, and recording at least one component of a generated small-signal current response over said capacitor. Correlation analysis is performed on the response based on a reference signal derived from the time dependent small signal voltage to determine the logic state of the memory cell. An apparatus performing a phase comparison according to this method includes a phase detector connected with a memory cell for detecting at least one phase in the response signal. The apparatus is configured to determine the logic state of the memory cell by comparing the detected phase and a phase reference signal.

摘要翻译： 一种用于确定数据存储装置中的存储单元的逻辑状态的方法，其中所述单元以包含可极化材料的电容器中的电极化状态的形式存储数据，包括在电容器上施加时间依赖的小信号电压 并且在所述电容器上记录产生的小信号电流响应的至少一个分量。 基于从时间依赖小信号电压导出的参考信号对响应进行相关分析，以确定存储单元的逻辑状态。 根据该方法进行相位比较的装置包括与用于检测响应信号中的至少一个相位的存储单元连接的相位检测器。 该装置被配置为通过比较检测到的相位和相位参考信号来确定存储器单元的逻辑状态。

公开(公告)号：US07646629B2

公开(公告)日：2010-01-12

申请号：US12010067

申请日：2008-01-18

申请人： Per Hamberg ,  Christer Karlsson ,  Per-Erik Nordal ,  Nicklas Ojakangas ,  Johan Carlsson ,  Hans G. Gudesen

发明人： Per Hamberg ,  Christer Karlsson ,  Per-Erik Nordal ,  Nicklas Ojakangas ,  Johan Carlsson ,  Hans G. Gudesen

IPC分类号： G11C11/22

CPC分类号： G11C11/22 ,  G06F12/0238 ,  G06F2212/1036 ,  G06F2212/7211 ,  G11C8/12 ,  G11C2013/0083

摘要： In a method for obviating the effect of disturb voltages in a data storage apparatus employing passive matrix addressing, an application of electric potentials for an addressing operation is according to a voltage pulse protocol. The data storage cells of the apparatus are provided in two or more electrically separated segments each constituting non-overlapping physical address subspaces of the data storage apparatus physical address space. A number of data storage cells in each segment are preset to the same polarization by an active voltage pulse with a specific polarization. In a first addressing operation one or more data storage cells are read by applying an active pulse with the same polarization to each data storage cell and recording the output charge response. On basis thereof the output data in subsequent second addressing operation are copied onto preset data storage cells in another segment of the data storage apparatus, this segment being selected on the basis of its previous addressing history.

摘要翻译： 在采用无源矩阵寻址的数据存储装置中避免干扰电压的影响的方法中，用于寻址操作的电位的应用是根据电压脉冲协议。 设备的数据存储单元被提供在两个或更多个电隔离的段中，每个段构成数据存储设备物理地址空间的非重叠物理地址子空间。 每个段中的多个数据存储单元通过具有特定极化的有源电压脉冲预设为相同的极化。 在第一寻址操作中，通过向每个数据存储单元施加具有相同极化的有源脉冲并记录输出电荷响应来读取一个或多个数据存储单元。 基于此，随后的第二寻址操作中的输出数据被复制到数据存储装置的另一段中的预定数据存储单元上，该段根据其先前的寻址历史进行选择。

公开(公告)号：US20060160251A1

公开(公告)日：2006-07-20

申请号：US11319383

申请日：2005-12-29

申请人： Peter Dyreklev ,  Anders Hagerstrom ,  Hans Gudesen ,  Per-Erik Nordal ,  Olle Hagel

发明人： Peter Dyreklev ,  Anders Hagerstrom ,  Hans Gudesen ,  Per-Erik Nordal ,  Olle Hagel

IPC分类号： H01L21/00 ,  H01L21/8242

CPC分类号： G11C11/22 ,  H01L24/48 ,  H01L27/11502 ,  H01L2224/05599 ,  H01L2224/48463 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： In a method for fabricating a memory device based on an electrically polarizable memory material in the form of an electret or ferroelectric material, the memory device comprises one or more layers with circuit structures provided exclusively or partially in a printing process. At least one protective interlayer is provided between at least two layers in the memory device, said protective interlayer exhibiting low solubility as well as low permeability for any solvents employed in the deposition of the other layers in the device. Use in fabricating a memory device, particularly a passive matrix-addressable memory device with an electret or ferroelectric memory material.

摘要翻译： 在基于驻极体或铁电材料形式的电可极化存储材料制造存储器件的方法中，存储器件包括一个或多个层，其具有专门或部分地在印刷过程中提供的电路结构。 在存储装置中的至少两层之间提供至少一个保护性中间层，所述保护性中间层对于在装置中沉积其它层的任何溶剂都表现出低溶解度以及低渗透性。 用于制造存储器件，特别是具有驻极体或铁电存储材料的无源矩阵寻址存储器件。

公开(公告)号：US20050249975A1

公开(公告)日：2005-11-10

申请号：US11088194

申请日：2005-03-24

申请人： Mats Sandberg ,  Per-Erik Nordal ,  Grzegorz Greczynski ,  Mats Johansson ,  Per Carlsen ,  Hans Gudesen ,  Goran Gustafsson ,  Linda Andersson

发明人： Mats Sandberg ,  Per-Erik Nordal ,  Grzegorz Greczynski ,  Mats Johansson ,  Per Carlsen ,  Hans Gudesen ,  Goran Gustafsson ,  Linda Andersson

IPC分类号： B32B19/00 ,  G11C11/22 ,  G11C13/02 ,  H01L20060101 ,  H01L33/00 ,  H01L51/10 ,  H01L51/30

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C13/0016 ,  G11C2213/55 ,  H01L51/0025 ,  H01L51/0026 ,  H01L51/0034 ,  H01L51/0043 ,  H01L51/005

摘要： An organic electronic device consists of one or more electro-active organic or polymer materials sandwiched between electrodes. Critical in such devices is the interface between the electrode and the polymer, where degradation or chemical reaction products may develop that are deleterious to the proper functioning of the device. This is solved by introducing a functional interlayer composed of one or more materials consisting of a molecular backbone bearing phosphonate or phosphate functions, either directly attached or through side chains, said functional layer being disposed between at least one of the respective electrodes and said one or more electro-active materials in the device.

摘要翻译： 有机电子器件由夹在电极之间的一种或多种电活性有机或聚合物材料组成。 在这种装置中的关键是电极和聚合物之间的界面，其中可能产生对装置的正常功能有害的降解或化学反应产物。 这通过引入由一种或多种由含有膦酸酯或磷酸酯官能团的分子骨架组成的材料构成的功能性夹层来解决，直接连接或通过侧链，所述功能层设置在至少一个相应的电极之间， 更多的电活性材料在设备中。