公开(公告)号：US20150194339A1

公开(公告)日：2015-07-09

申请号：US14283162

申请日：2014-05-20

Applicant: QUALCOMM Incorporated

Inventor： Stanley Seungchul SONG ,  Kern RIM ,  Zhongze WANG ,  Jeffrey Junhao XU ,  Xiangdong CHEN ,  Choh Fei YEAP

IPC: H01L21/768 ,  H01L23/48

CPC classification number: H01L21/76802 ,  H01L21/76814 ,  H01L21/76877 ,  H01L21/76895 ,  H01L23/48 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of fabricating middle of line (MOL) layers and devices including MOL layers. A method in accordance with an aspect of the present disclosure includes depositing a hard mask across active contacts to terminals of semiconductor devices of a semiconductor substrate. Such a method also includes patterning the hard mask to selectively expose some of the active contacts and selectively insulate some of the active contacts. The method also includes depositing a conductive material on the patterned hard mask and the exposed active contacts to couple the exposed active contacts to each other over an active area of the semiconductor devices.

Abstract translation: 制造中间线（MOL）层和包括MOL层的器件的方法。 根据本公开的一个方面的方法包括将半导体衬底的半导体器件的端子上的活性触点沉积硬掩模。 这种方法还包括图案化硬掩模以选择性地暴露一些有源触点并选择性地绝缘一些有源触点。 该方法还包括在图案化的硬掩模和暴露的有源触点上沉积导电材料，以将暴露的有源触点彼此连接在半导体器件的有效区域上。