公开(公告)号：US5385855A

公开(公告)日：1995-01-31

申请号：US201494

申请日：1994-02-24

申请人： Dale M. Brown ,  Gerald J. Michon ,  Vikram B. Krishnamurthy ,  James W. Kretchmer

发明人： Dale M. Brown ,  Gerald J. Michon ,  Vikram B. Krishnamurthy ,  James W. Kretchmer

IPC分类号： H01L21/76 ,  H01L21/82 ,  H01L21/265

CPC分类号： H01L21/8213 ,  H01L21/7602 ,  Y10S148/148

摘要： A depletion mode MOSFET and resistor are fabricated as a silicon carbide (SiC) integrated circuit (IC). The SiC IC includes a first SiC layer doped to a first conductivity type and a second SiC layer overlaid on the first SiC layer and doped to a second conductivity type. The second SiC layer includes at least four more heavily doped regions of the second conductivity type, with two of such regions comprising MOSFET source and drain electrodes and two other of such regions comprising resistor electrodes. The second SiC layer includes an isolation trench between the MOSFET electrodes and the resistor electrodes. At least two electrically conductive contacts are provided as MOSFET electrode contacts, each being positioned over at least a portion of a respective MOSFET electrode and two other electrically conductive contacts are provided as resistor electrode contacts, each being positioned over at least a portion of a respective resistor electrode. An oxide layer extends over the second SiC layer with at least a portion of the oxide layer positioned between the MOSFET electrode contacts. A MOSFET gate electrode is positioned over the oxide layer, and coupling means are provided for electrically couping one of the source, drain, and gate electrodes to one of the resistor electrodes.

摘要翻译： 耗尽型MOSFET和电阻器被制造为碳化硅（SiC）集成电路（IC）。 SiC IC包括掺杂到第一导电类型的第一SiC层和覆盖在第一SiC层上并掺杂到第二导电类型的第二SiC层。 第二SiC层包括第二导电类型的至少四个更重掺杂区域，其中两个这样的区域包括MOSFET源极和漏极电极以及包括电阻器电极的另外两个这样的区域。 第二SiC层包括在MOSFET电极和电阻器电极之间的隔离沟槽。 提供至少两个导电触点作为MOSFET电极触点，每个至少两个导电触点位于相应MOSFET电极的至少一部分上方，并且另外两个导电触点设置为电阻器电极触点，每个触点都位于相应的至少一部分上 电阻电极。 氧化物层在第二SiC层上延伸，其中氧化物层的至少一部分位于MOSFET电极触点之间。 MOSFET栅电极位于氧化物层上方，并且提供耦合装置用于将源极，漏极和栅电极之一电耦合到电阻器电极之一。

公开(公告)号：US5378642A

公开(公告)日：1995-01-03

申请号：US48448

申请日：1993-04-19

申请人： Dale M. Brown ,  Mario Ghezzo

发明人： Dale M. Brown ,  Mario Ghezzo

IPC分类号： H01L21/04 ,  H01L29/10 ,  H01L29/808 ,  H01L21/266

CPC分类号： H01L29/66068 ,  H01L29/1066 ,  H01L29/808 ,  Y10S438/931

摘要： A silicon carbide (SiC) junction field effect transistor (JFET) device is fabricated upon a substrate layer, such as a p type conductivity SiC substrate, using ion implantation for the source and drain areas. A SiC p type conductivity layer is epitaxially grown on the substrate. A SiC n type conductivity layer is formed by ion implantation or epitaxial deposition upon the p type layer. The contacting surfaces of the p and n type layers form a junction. A p+ type gate area supported by the n type layer is formed either by the process of ion implantation or the process of depositing and patterning a second p type layer. The source and drain areas are heavily doped to n+ type conductivity by implanting donor ions in the n type layer.

摘要翻译： 碳化硅（SiC）结场效应晶体管（JFET）器件使用离子注入制造在诸如p型导电性SiC衬底的衬底层上，用于源极和漏极区域。 在衬底上外延生长SiC p型导电层。 在p型层上通过离子注入或外延沉积形成SiC n型导电层。 p型和n型层的接触表面形成结。 由n型层支撑的p +型栅极区域通过离子注入的过程或第二p型层的沉积和图案化处理而形成。 通过将供体离子注入到n型层中，源区和漏区被重掺杂到n +型导电性。

公开(公告)号：US5303684A

公开(公告)日：1994-04-19

申请号：US47936

申请日：1993-04-19

申请人： Dale M. Brown ,  Bernard Gorowitz

发明人： Dale M. Brown ,  Bernard Gorowitz

IPC分类号： F01D21/00 ,  F23N1/02 ,  F23N5/00 ,  F23N5/08 ,  F02P5/10 ,  F02D41/14 ,  G01L23/22 ,  G01M15/00

CPC分类号： F01D21/003 ,  F23N5/003 ,  F23N5/082 ,  F23N1/02 ,  F23N2041/20 ,  Y02T50/677

摘要： Combustion in a gas turbine is controlled through use of flame spectroscopy in order to achieve low NO.sub.x emissions in the exhaust. By monitoring the combustion flame in the turbine to determine intensity of non-infrared spectral lines, and dynamically adjusting the fuel/air ratio of the fuel mixture such that this intensity remains below a predetermined level associated with a desired low level of NO.sub.x emissions, the engine produces significantly reduced NO.sub.x emissions in its exhaust but at a sufficiently high combustion flame temperature to avoid any undue risk of flame-out, thereby assuring stable, safe and reliable operation.

摘要翻译： 通过使用火焰光谱法来控制燃气轮机中的燃烧，以便在排气中实现低NOx排放。 通过监测涡轮机中的燃烧火焰以确定非红外光谱线的强度，并且动态地调节燃料混合物的燃料/空气比，使得该强度保持低于与期望的低水平的NOx排放相关联的预定水平， 发动机在其排气中产生显着减少的NOx排放，但是在足够高的燃烧火焰温度下，以避免任何不适当的熄火风险，从而确保稳定，安全和可靠的操作。

公开(公告)号：US5057682A

公开(公告)日：1991-10-15

申请号：US607222

申请日：1990-11-05

申请人： Gerald J. Michon ,  Dale M. Brown

发明人： Gerald J. Michon ,  Dale M. Brown

IPC分类号： A61B6/03 ,  H03F3/08 ,  H04N5/369 ,  H05G1/26

CPC分类号： H05G1/26 ,  A61B6/032 ,  H03F3/082 ,  H04N3/1512 ,  H04N3/1568

摘要： The linearity and dynamic range of a photodetector system is enhanced by providing real time cancellation of condition-dependent quiescent output signals from the photosensitive devices by provision of a condition-dependent output signal monitoring device which drives the input section of a current mirror having output sections connected to the active photosensitive devices to zero out the condition-dependent quiescent output signals of those photosensitive devices during system operation. Multiple output sections may be run from a single input section of the current mirror.

摘要翻译： 光电检测器系统的线性度和动态范围通过提供一种依赖于条件的输出信号监测装置来提供来自感光装置的条件相关静态输出信号的实时消除，该装置驱动具有输出部分的电流镜的输入部分 连接到有源光敏器件，以在系统操作期间将那些光敏器件的状态相关的静态输出信号清零。 多个输出部分可以从当前镜像的单个输入部分运行。

公开(公告)号：US4871617A

公开(公告)日：1989-10-03

申请号：US595800

申请日：1984-04-02

申请人： Manjin J. Kim ,  Dale M. Brown ,  Simon S. Cohen ,  Bernard Gorowitz ,  Richard J. Saia

发明人： Manjin J. Kim ,  Dale M. Brown ,  Simon S. Cohen ,  Bernard Gorowitz ,  Richard J. Saia

IPC分类号： H01L21/285 ,  H01L21/768

CPC分类号： H01L21/28512 ,  H01L21/76879 ,  Y10T428/12528 ,  Y10T428/12597 ,  Y10T428/12826 ,  Y10T428/1284

摘要： A conductive member consisting of a first conductor of an alloy of titanium and tungsten and a second conductor of a refractory metal such as molybdenum is sintered to a conductive member of silicon of low resistivity to form a low resistance contact therewith.

摘要翻译： 由钛和钨的合金的第一导体和诸如钼的难熔金属的第二导体组成的导电构件被烧结到具有低电阻率的硅的导电构件以与其形成低电阻接触。

公开(公告)号：US4227944A

公开(公告)日：1980-10-14

申请号：US47888

申请日：1979-06-11

申请人： Dale M. Brown ,  Tat-Sing P. Chow ,  James F. Gibbons ,  Paul A. McConnelee

发明人： Dale M. Brown ,  Tat-Sing P. Chow ,  James F. Gibbons ,  Paul A. McConnelee

IPC分类号： H01L21/3205 ,  H01L21/28 ,  H01L21/283 ,  H01L21/321 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49

CPC分类号： H01L21/28105 ,  H01L21/32105 ,  H01L21/76889 ,  H01L23/53257 ,  H01L2924/0002 ,  Y10S148/103 ,  Y10S148/141 ,  Y10S148/147

摘要： A method of making a composite conductive structure is described. The structure includes an insulating substrate on which is provided a conductor of a refractory metal substantially nonreactive with silicon dioxide covered by a layer of a silicide of the refractory metal and a layer of silicon dioxide. The method includes depositing a layer of polycrystalline silicon over the conductor and the insulating substrate, reacting the layer of polycrystalline silicon with the conductor to form a refractory metal silicide, removing the unreacted portion of the layer of polycrystalline silicon, and then oxidizing the exposed surface of the refractory metal silicide into a layer of silicon dioxide.

摘要翻译： 描述了制备复合导电结构的方法。 该结构包括绝缘基板，在其上设置难熔金属的导体，该难熔金属的导体与由难熔金属的硅化物层和二氧化硅层覆盖的二氧化硅非反应。 该方法包括在导体和绝缘基板上沉积多晶硅层，使多晶硅层与导体反应以形成难熔金属硅化物，去除多晶硅层的未反应部分，然后氧化暴露表面 的难熔金属硅化物变成二氧化硅层。