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1.发明授权
公开(公告)号：US4227944A
公开(公告)日：1980-10-14
申请号：US47888
申请日：1979-06-11
IPC分类号： H01L21/3205 , H01L21/28 , H01L21/283 , H01L21/321 , H01L21/768 , H01L23/52 , H01L23/532 , H01L29/423 , H01L29/43 , H01L29/49
CPC分类号： H01L21/28105 , H01L21/32105 , H01L21/76889 , H01L23/53257 , H01L2924/0002 , Y10S148/103 , Y10S148/141 , Y10S148/147
摘要： A method of making a composite conductive structure is described. The structure includes an insulating substrate on which is provided a conductor of a refractory metal substantially nonreactive with silicon dioxide covered by a layer of a silicide of the refractory metal and a layer of silicon dioxide. The method includes depositing a layer of polycrystalline silicon over the conductor and the insulating substrate, reacting the layer of polycrystalline silicon with the conductor to form a refractory metal silicide, removing the unreacted portion of the layer of polycrystalline silicon, and then oxidizing the exposed surface of the refractory metal silicide into a layer of silicon dioxide.
摘要翻译： 描述了制备复合导电结构的方法。 该结构包括绝缘基板，在其上设置难熔金属的导体，该难熔金属的导体与由难熔金属的硅化物层和二氧化硅层覆盖的二氧化硅非反应。 该方法包括在导体和绝缘基板上沉积多晶硅层，使多晶硅层与导体反应以形成难熔金属硅化物，去除多晶硅层的未反应部分，然后氧化暴露表面 的难熔金属硅化物变成二氧化硅层。
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公开(公告)号：US06784430B2
公开(公告)日：2004-08-31
申请号：US10277940
申请日：2002-10-23
IPC分类号： H01L2714
CPC分类号： G01J5/0014 , G01J1/0488 , G01J1/42 , G01J5/602 , H04M3/382 , H04M3/42314 , H04M3/4234
摘要： A flame sensor for combustion flame temperature determination comprises elongated extensions that are positioned with parallel interdigitated longitudinal axis with respect to one another. An optical spectrometer comprises the sensor and a system comprises the sensor. A method for combustion flame temperature determination comprises obtaining a first photodiode signal and a second photodiode signal by using photodiode devices comprising photodiodes with elongated extending interdigitated digits. A method of fabricating a flame sensor for combustion flame temperature determination, comprises forming first and second photodiodes with elongated extending interdigitated digits.
摘要翻译： 用于燃烧火焰温度测定的火焰传感器包括细长延伸部，其相对于彼此以平行的叉指纵轴线定位。 光谱仪包括传感器，系统包括传感器。 一种用于燃烧火焰温度测定的方法包括通过使用包括具有细长延伸的叉指位的光电二极管的光电二极管器件来获得第一光电二极管信号和第二光电二极管信号。 一种制造用于燃烧火焰温度测定的火焰传感器的方法，包括：形成第一和第二光电二极管，其具有细长延伸的叉指位数。
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公开(公告)号：US06768326B2
公开(公告)日：2004-07-27
申请号：US09682636
申请日：2001-10-01
IPC分类号： G01R31302
CPC分类号： G01T1/2018
摘要： A radiation detector includes: a scintillator which produces UV photons in response to receiving radiation from a radiation producing source; and, a wide bandgap semiconductor device sensitive to the UV photons produced by the scintillator. The semiconductor device produces an electric signal as a function of the amount of UV photons incident thereon. Preferably, the electric signal is then measure, recorded and/or otherwise analyzed.
摘要翻译： 辐射检测器包括：闪烁体，其响应于接收来自辐射产生源的辐射而产生UV光子; 以及对由闪烁体产生的UV光子敏感的宽带隙半导体器件。 半导体器件产生作为入射在其上的UV光子的量的函数的电信号。 优选地，然后测量，记录和/或以其他方式分析电信号。
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公开(公告)号：US5467185A
公开(公告)日：1995-11-14
申请号：US276123
申请日：1994-07-15
申请人： William E. Engeler , Dale M. Brown
发明人： William E. Engeler , Dale M. Brown
IPC分类号： G01J5/00 , F02D35/02 , F02D41/14 , F02D45/00 , G01M15/04 , G01M15/10 , G01M15/00 , F02P5/145
CPC分类号： F02D35/022 , F02D35/025 , F02D41/008 , F02D41/1451 , G01M15/048 , G01M15/10
摘要： Respective SiC (silicon carbide) photodiode sensors are used to measure flame temperature at each cylinder of an internal combustion engine, and information generated by the SiC photodiode sensors is used to control the fuel injection in a feedback loop to control individual cylinder flame temperature and combustion.
摘要翻译： 使用各种SiC（碳化硅）光电二极管传感器来测量内燃机的每个气缸的火焰温度，并且使用由SiC光电二极管传感器产生的信息来控制反馈环路中的燃料喷射以控制单个气缸火焰温度和燃烧 。
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公开(公告)号：US5187380A
公开(公告)日：1993-02-16
申请号：US865515
申请日：1992-04-09
IPC分类号： A61B6/03 , G01T1/24 , H01L27/14 , H01L27/144 , H01L31/0232 , H01L31/0352 , H01L31/09 , H01L31/115 , H01L31/118
CPC分类号： H01L31/115 , H01L27/1443 , H01L31/02322 , H01L31/03529 , H01L31/1185 , Y02E10/50
摘要： A low capacitance radiation detector comprises a monocrystalline silicon substrate heavily doped to N type conductivity with a more lightly doped N type conductivity epitaxial layer formed on the substrate. A plurality of heavily doped N type upper surface layer segments are formed in the epitaxial layer. A patterned region of the epitaxial layer, heavily doped to P type conductivity and in the shape of parallel stripes joined at each end by a respective stripe perpendicular to the parallel stripes, is formed in the epitaxial layer and situated between adjacent ones of the upper surface layer segments, with each stripe extending into the epitaxial layer deeper than, and separated from, the upper surface layer segments so as to form a minority charge carrier-collecting PN junction with the epitaxial layer. The parallel stripes are spaced apart from each other by a distance smaller than or comparable to the minority charge carrier recombination diffusion length for the epitaxial layer, and the epitaxial layer thickness is smaller than or comparable to the minority charge carrier recombination diffusion length. In a second embodiment, the epitaxial layer has beveled edges and the heavily doped N type upper surface layer segments formed in the epitaxial layer extend over the beveled edges.
摘要翻译： 低电容辐射检测器包括重掺杂到N型导电性的单晶硅衬底，在衬底上形成更轻掺杂的N型导电外延层。 在外延层中形成多个重掺杂的N型上表面层段。 在外延层中形成外延层的图案化区域，其重掺杂为P型导电性，并且在每一端由垂直于平行条纹的相应条带连接的平行条形状，并且位于相邻的上表面之间 每个条带延伸到外延层中比上表面层段更深且分离，以便与外延层形成少数电荷载流子收集PN结。 平行条纹彼此间隔开距离外延层的少数电荷载流子复合扩散长度的距离或相当于外延层厚度小于或与少数电荷载流子复合扩散长度相当的距离。 在第二实施例中，外延层具有倾斜边缘，并且形成在外延层中的重掺杂N型上表面层段在倾斜边缘上延伸。
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公开(公告)号：US4146904A
公开(公告)日：1979-03-27
申请号：US861673
申请日：1977-12-19
IPC分类号： G01T1/24 , G01T1/20 , H01L31/0232 , H01L31/09 , H01L31/10 , H01L31/103 , H01L27/14 , G01T1/22
CPC分类号： H01L31/02322 , G01T1/2018 , H01L31/103
摘要： In a substrate of semiconductor material of one conductivity type and high resistivity, a thin layer of the same conductivity and low resistivity is provided adjacent a major surface of the substrate. A region of opposite conductivity type is provided in the substrate adjacent the major surface to form a PN junction therewith spaced adjacent to the thin layer. Zero bias is provided on the PN junction. Minority charge carriers generated in the semiconductor substrate underlying the thin layer in response to applied radiation diffuse to the region of opposite conductivity type and are sensed.
摘要翻译： 在一种导电类型和高电阻率的半导体材料的衬底（11）中，在衬底的主表面（15）附近提供具有相同导电性和低电阻率的薄层（13,14）。 相邻导电类型的区域（21）设置在邻近主表面的衬底中，以形成邻近薄层的PN结（22）。 在PN结上提供零偏置。 响应于施加的辐射而在薄层下面的半导体衬底中产生的少数电荷载流子扩散到相反导电类型的区域并被感测。
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公开(公告)号：US4140909A
公开(公告)日：1979-02-20
申请号：US861674
申请日：1977-12-19
申请人： Dale M. Brown , Marvin Garfinkel
发明人： Dale M. Brown , Marvin Garfinkel
IPC分类号： G01T1/24 , G01T1/20 , H01L31/0232 , H01L31/09 , H01L31/103 , H01L31/113 , G01T1/22
CPC分类号： G01T1/2018 , H01L31/02322 , H01L31/103 , H01L31/113
摘要： A layer of transparent conductive material insulatingly overlies a major surface of a substrate of semiconductor material to provide a CIS (conductor-insulator-semiconductor) capacitor. A region of opposite conductivity type is provided in the substrate adjacent the major surface of the substrate. The capacitor is biased in accumulation and the region of opposite conductivity type is reversely biased with respect to the substrate. Minority charge carriers generated in the semiconductor substrate underlying the conductive layer in response to applied radiation diffuse to the region of opposite conductivity type and are sensed.
摘要翻译： {PG，1 A透明导电材料层绝缘地覆盖在半导体材料的衬底的主表面上，以提供CIS（导体 - 绝缘体 - 半导体）电容器。 在衬底的与衬底的主表面相邻的位置处提供相反导电类型的区域。 电容器被偏置在积聚中，相反导电类型的区域相对于衬底反向偏置。 响应于施加的辐射在导电层下面的半导体衬底中产生的少数电荷载流子扩散到相反导电类型的区域并被感测。
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公开(公告)号：US3988613A
公开(公告)日：1976-10-26
申请号：US573842
申请日：1975-05-02
申请人： Dale M. Brown , Mario Ghezzo , Marvin Garfinkel
发明人： Dale M. Brown , Mario Ghezzo , Marvin Garfinkel
IPC分类号： H01L27/108 , H01L27/148 , H01L27/14
CPC分类号： H01L27/108 , H01L27/14862
摘要： An array of radiation sensing devices, each including a pair of conductor-insulator-semiconductor capacitors, arranged in rows and columns in which the row stripes or lines form row connected capacitors in relation to selected surface regions of a semiconductor substrate and in which the column stripes or lines form column connected capacitors in relation to the selected surface regions. Each of the row stripes overlies first portions of the selected surface regions of a respective row. Each of the column stripes overlies entirely the selected surface regions of a respective column.
摘要翻译： 辐射检测装置阵列，每个包括一对导体 - 绝缘体 - 半导体电容器，其布置成行和列，其中行条或线相对于半导体衬底的选定的表面区域形成行连接的电容器，并且其中列 条纹或线条相对于选定的表面区域形成列连接的电容器。 行条中的每一行都覆盖相应行的所选表面区域的第一部分。 每个列条都完全覆盖相应列的选定表面区域。
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公开(公告)号：US06838741B2
公开(公告)日：2005-01-04
申请号：US10314986
申请日：2002-12-10
IPC分类号： G01J1/02 , H01J20060101 , H01L31/0232 , H01L31/0248 , H01L31/0304 , H01L31/0312 , H01L31/0352 , H01L31/06 , H01L31/062 , H01L31/107 , H01L31/113 , H01L31/115
CPC分类号： H01L31/02322 , H01L31/02161 , H01L31/03044 , H01L31/0312 , H01L31/035281 , H01L31/107 , H01L31/115
摘要： An aspect of the present invention is directed to an avalanche photodiode (APD) device for use in oil well drilling applications in harsh, down-hole environments where shock levels are near 250 gravitational acceleration (G) and/or temperatures approach or exceed 150° C. Another aspect of the present invention is directed to an APD device fabricated using SiC materials. Another aspect of the present invention is directed to an APD device fabricated using GaN materials. According to an embodiment of the present invention, an avalanche photodiode for detecting ultraviolet photons comprises a substrate having a first dopant; a first layer having the first dopant, positioned on top of the substrate; a second layer having a second dopant, positioned on top of the first layer; a third layer having a second dopant, positioned on top of the second layer; a passivation layer for providing electrical passivation on a surface of the avalanche photodiode; a phosphorous silicate glass layer for limiting mobile ion transport, positioned on top of the third layer; and a pair of metal electrodes for providing an ohmic contact wherein a first electrode is positioned below the substrate and a second electrode is positioned above the third layer; wherein the avalanche photodiode comprises a first sidewall and a second sidewall forming a sloped mesa shape; and wherein the avalanche photodiode operates in an environment comprising a temperature approximately equal to 150 degrees Celsius.
摘要翻译： 本发明的一个方面涉及一种雪崩光电二极管（APD）装置，用于在冲击水平接近250重力加速度（G）和/或温度接近或超过150°的恶劣的井下环境中的油井钻井应用 C.本发明的另一方面涉及使用SiC材料制造的APD器件。 本发明的另一方面涉及使用GaN材料制造的APD器件。 根据本发明的实施例，用于检测紫外光子的雪崩光电二极管包括具有第一掺杂剂的衬底; 具有第一掺杂剂的第一层，位于衬底的顶部; 具有位于所述第一层的顶部上的具有第二掺杂剂的第二层; 具有第二掺杂剂的第三层，位于所述第二层的顶部; 用于在雪崩光电二极管的表面上提供电钝化的钝化层; 用于限制移动离子迁移的磷硅酸盐玻璃层，位于第三层的顶部; 以及用于提供欧姆接触的一对金属电极，其中第一电极位于所述衬底下方，并且第二电极位于所述第三层之上; 其中所述雪崩光电二极管包括形成倾斜台面形状的第一侧壁和第二侧壁; 并且其中所述雪崩光电二极管在包括大约等于150摄氏度的温度的环境中操作。
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10.发明授权Combustion control for producing low NO.sub.x emissions through use of flame spectroscopy 失效燃烧控制通过使用火焰光谱法生产低NOx排放
公开(公告)号：US5480298A
公开(公告)日：1996-01-02
申请号：US332190
申请日：1994-10-31
申请人： Dale M. Brown
发明人： Dale M. Brown
CPC分类号： G01J5/0014 , F01D21/003 , F23N5/003 , F23N5/082 , F23N1/02 , F23N2041/20 , Y02T50/677
摘要： Combustion in a boiler burner is controlled through use of flame spectroscopy in order to achieve low NO.sub.x emissions in the exhaust. By monitoring the combustion flame in the boiler burner to determine intensity of ultraviolet spectral lines, and dynamically adjusting the fuel/air ratio of the fuel mixture such that this intensity remains below a predetermined level associated with a desired low level of NO.sub.x emissions, the boiler burner produces significantly reduced NO.sub.x emissions in its exhaust but at a sufficiently high combustion flame temperature to avoid any undue risk of flame-out, thereby assuring stable, safe and reliable operation.
摘要翻译： 通过使用火焰光谱仪来控制锅炉燃烧器中的燃烧，以实现排气中的低NOx排放。 通过监测锅炉燃烧器中的燃烧火焰以确定紫外光谱线的强度，并且动态地调节燃料混合物的燃料/空气比，使得该强度保持低于与期望的低水平的NOx排放相关联的预定水平，锅炉 燃烧器在其排气中产生显着减少的NOx排放，但是在足够高的燃烧火焰温度下，以避免任何不适当的熄火风险，从而确保稳定，安全和可靠的操作。
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