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    Substrate brush scrubbing and proximity cleaning-drying sequence using compatible chemistries, and method, apparatus, and system for implementing the same
    42.
    发明申请
    Substrate brush scrubbing and proximity cleaning-drying sequence using compatible chemistries, and method, apparatus, and system for implementing the same 有权
    使用兼容化学物质的底物刷洗涤和邻近清洁干燥顺序，以及用于实施相同化学品的方法，装置和系统

    公开(公告)号：US20050155629A1

    公开(公告)日：2005-07-21

    申请号：US10816432

    申请日：2004-03-31

    申请人： Michael Ravkin ,  John de Larios

    发明人： Michael Ravkin ,  John de Larios

    IPC分类号： H01L21/00 ,  B08B7/00

    CPC分类号： H01L21/67051 ,  H01L21/67028 ,  H01L21/67046 ,  Y10S134/902

    摘要： A method for cleaning and drying a front and a back surface of a substrate is provided. The method includes brush scrubbing the back surface of the substrate using a brush scrubbing fluid chemistry. The method further includes applying a front meniscus onto the front surface of the substrate upon completing the brush scrubbing of the back surface. The front meniscus includes a front cleaning chemistry that is chemically compatible with the brush scrubbing fluid chemistry.

    摘要翻译： 提供了用于清洁和干燥基板的前表面和后表面的方法。 该方法包括使用刷洗涤流体化学刷刷洗衬底的背面。 该方法进一步包括在完成后表面的刷子洗涤时将前弯月面施加到基底的前表面上。 前弯液面包括与刷洗涤液化学物质化学相容的前清洗化学物质。

    Apparatuses and methods for cleaning a substrate
    43.
    发明申请
    Apparatuses and methods for cleaning a substrate 失效
    用于清洁基底的装置和方法

    公开(公告)号：US20050133061A1

    公开(公告)日：2005-06-23

    申请号：US10816337

    申请日：2004-03-31

    申请人： John de Larios ,  Aleksander Owczarz ,  Alan Schoepp ,  Fritz Redeker

    发明人： John de Larios ,  Aleksander Owczarz ,  Alan Schoepp ,  Fritz Redeker

    IPC分类号： B08B3/00 ,  H01L21/00 ,  B08B1/02

    CPC分类号： B08B3/003 ,  H01L21/67028 ,  H01L21/67046 ,  Y10S134/902

    摘要： An apparatus for use in processing a substrate includes a brush enclosure extending over a length. The brush enclosure is configured to be disposed over a surface of the substrate and has an open region that is configured to be disposed in proximity to the substrate. The open region extends over the length of the brush enclosure and enables foam from within the brush enclosure to contact the surface of the substrate. A substrate cleaning system and method for cleaning a substrate are also described.

    摘要翻译： 用于处理衬底的装置包括在一定长度上延伸的刷子外壳。 电刷外壳被配置为设置在基板的表面上方，并且具有被配置为设置在基板附近的开放区域。 开放区域在刷子外壳的长度上延伸，并使来自刷子外壳内的泡沫能够接触基板的表面。 还描述了用于清洁衬底的衬底清洁系统和方法。

    Methods for substrate processing in cluster tool configurations having meniscus application systems
    44.
    发明授权
    Methods for substrate processing in cluster tool configurations having meniscus application systems 有权
    具有弯液面应用系统的簇工具配置中的衬底处理方法

    公开(公告)号：US07722724B2

    公开(公告)日：2010-05-25

    申请号：US11809618

    申请日：2007-05-31

    申请人： Carl Woods ,  John de Larios

    发明人： Carl Woods ,  John de Larios

    IPC分类号： B08B3/00

    CPC分类号： H01L21/67051 ,  C25D5/22 ,  C25D17/001 ,  H01L21/02041 ,  H01L21/02052 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67046 ,  Y10S134/902

    摘要： Method for processing a substrate are provided. The processing occurs when the substrate is moved between cluster tools. One method includes providing the substrate to a cluster tool, and the cluster tool is configured to move the substrate into a meniscus processing module having at least one proximity head. The proximity head is configured to perform operations including applying a fluid onto a region of a surface of the substrate, such the fluid is continuously flown so as to substantially fill the region between a surface of the proximity head and the surface of the substrate. An operation of removing the fluid from the region by applying a vacuum force through the proximity head is also provided. The applying and removing is operated substantially simultaneously so that the fluid forms a controlled fluid meniscus that remains between the surface of the substrate and the surface of the proximity head when the proximity head is positioned over the substrate. The method can include moving one of the controlled fluid meniscus or the substrate so that the controlled fluid meniscus is caused to contact regions of the surface of the substrate to cause fluid processing of the surface of the substrate when in the meniscus processing module. The method can also include moving the substrate out of the meniscus processing module and into a next module of the of the cluster tool or out of the cluster tool.

    摘要翻译： 提供了处理基板的方法。 当基板在集群工具之间移动时发生处理。 一种方法包括将基板提供给集群工具，并且集群工具被配置为将衬底移动到具有至少一个邻近头部的弯液面处理模块中。 邻近头部被配置为执行包括将流体施加到基底表面的区域上的操作，使得流体连续流动，以便基本上填充邻近头部的表面和基底表面之间的区域。 还提供了通过施加真空力通过邻近头部从该区域去除流体的操作。 施加和移除基本同时操作，使得当邻近头位于衬底上方时，流体形成保持在衬底的表面和邻近头部的表面之间的受控流体弯液面。 该方法可以包括移动受控流体弯月面或基底之一，使得受控流体弯液面在基板的表面接触时，在弯月面处理模块中引起基底表面的流体处理。 该方法还可以包括将基板移出弯液面处理模块并进入集群工具的下一个模块或者从集群工具中移出。

    Apparatus and method for confined area planarization
    45.
    发明授权
    Apparatus and method for confined area planarization 有权
    限制区域平面化的装置和方法

    公开(公告)号：US07396430B2

    公开(公告)日：2008-07-08

    申请号：US11395881

    申请日：2006-03-31

    申请人： John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  Michael Ravkin ,  John de Larios

    发明人： John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  Michael Ravkin ,  John de Larios

    IPC分类号： H01L21/306

    CPC分类号： H01L21/32115 ,  C25F7/00

    摘要： A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.

    摘要翻译： 提供接近头和相关联的使用方法用于执行半导体晶片的限定区域平坦化。 邻近头包括限定为维持电解质溶液的室。 在室内暴露于电解质溶液中设置阴极。 阳离子交换膜设置在室的下部开口的上方。 阳离子交换膜的顶表面直接暴露于电解质溶液中以保持在室内。 流体供应通道被定义为在邻近阳离子交换膜的下表面的位置排出流体。 定义真空通道以在邻近阳离子交换膜的下表面的位置处提供吸力，使得要从流体供应通道排出的流体流过阳离子交换膜的下表面。

    Meniscus proximity system for cleaning semiconductor substrate surfaces
    46.
    发明授权
    Meniscus proximity system for cleaning semiconductor substrate surfaces 有权
    用于清洁半导体衬底表面的半月板接近系统

    公开(公告)号：US07350316B2

    公开(公告)日：2008-04-01

    申请号：US11619599

    申请日：2007-01-03

    申请人： Carl Woods ,  James P. Garcia ,  John de Larios

    发明人： Carl Woods ,  James P. Garcia ,  John de Larios

    IPC分类号： B08B3/00 ,  F26B5/12

    CPC分类号： H01L21/67051 ,  C25D5/22 ,  C25D17/001 ,  H01L21/02041 ,  H01L21/02052 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67046 ,  Y10S134/902

    摘要： A system and apparatus for cleaning a substrate is provided. The system includes a first head configured as a bar shape that extends approximately a diameter of the substrate. The first head is configured for placement on a first side of the substrate. A second head is also provided, and is configured as a bar shape that extends approximately the diameter of the wafer, and the second head is configured for placement on a second side of the substrate, such that the second side is opposite the first side. In this example, each of the first head and the second head have conduits formed therein along the diameter of the substrate for delivering and removing fluids so that a meniscus is capable of being contained between each of the first head and a substrate surface of the first side of the substrate and the second head and a substrate surface of the second side of the substrate.

    摘要翻译： 提供了一种清洁基板的系统和装置。 该系统包括构造为棒状的第一头部，其大致延伸到基底的直径。 第一头被配置为放置在基底的第一侧上。 还提供了第二头，并且被配置为大致延伸晶片的直径的棒状，并且第二头构造成用于放置在衬底的第二侧上，使得第二侧与第一侧相对。 在该示例中，第一头部和第二头部中的每一个具有沿着基底的直径形成在其中的导管，用于输送和移除流体，使得弯液面能够容纳在第一头部和第一头部的基底表面之间 基板和第二头部的一侧以及基板的第二侧的基板表面。

    Post etch wafer surface cleaning with liquid meniscus
    47.
    发明申请
    Post etch wafer surface cleaning with liquid meniscus 失效
    用液体弯液面后蚀刻晶片表面清洁

    公开(公告)号：US20070240737A1

    公开(公告)日：2007-10-18

    申请号：US11477299

    申请日：2006-06-28

    申请人： Ji Zhu ,  Seokmin Yun ,  Mark Wilcoxson ,  John de Larios

    发明人： Ji Zhu ,  Seokmin Yun ,  Mark Wilcoxson ,  John de Larios

    IPC分类号： C23G1/00 ,  C23G1/02 ,  B08B3/00

    CPC分类号： H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  Y10S134/902

    摘要： A method for cleaning the surface of a semiconductor wafer is disclosed. A first cleaning solution is applied to the wafer surface to remove contaminants on the wafer surface. The first cleaning solution is removed with some of the contaminants on the wafer surface. Next, an oxidizer solution is applied to the wafer surface. The oxidizer solution forms an oxidized layer on remaining contaminants. The oxidizer solution is removed and then a second cleaning solution is applied to the wafer surface. The second cleaning solution is removed from the wafer surface. The cleaning solution is configured to substantially remove the oxidized layer along with the remaining contaminants.

    摘要翻译： 公开了一种用于清洁半导体晶片表面的方法。 将第一清洁溶液施加到晶片表面以去除晶片表面上的污染物。 用晶片表面上的一些污染物去除第一个清洁溶液。 接下来，将氧化剂溶液施加到晶片表面。 氧化剂溶液在剩余的污染物上形成氧化层。 除去氧化剂溶液，然后将第二清洗溶液施加到晶片表面。 从晶片表面去除第二清洗溶液。 清洁溶液被配置为与剩余的污染物一起基本上除去氧化层。