公开(公告)号：US20150084050A1

公开(公告)日：2015-03-26

申请号：US14560259

申请日：2014-12-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari SASAKI ,  Kosei NODA ,  Yuhei SATO ,  Yuta ENDO

IPC: H01L29/786 ,  H01L29/423

CPC classification number: H01L29/7869 ,  H01L29/42364

Abstract: Hydrogen concentration and oxygen vacancies in an oxide semiconductor film are reduced. Reliability of a semiconductor device which includes a transistor using an oxide semiconductor film is improved. One embodiment of the present invention is a semiconductor device which includes a base insulating film; an oxide semiconductor film formed over the base insulating film; a gate insulating film formed over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween. The base insulating film shows a signal at a g value of 2.01 by electron spin resonance. The oxide semiconductor film does not show a signal at a g value of 1.93 by electron spin resonance.

Abstract translation: 氧化物半导体膜中的氢浓度和氧空位减少。 提高了包括使用氧化物半导体膜的晶体管的半导体器件的可靠性。 本发明的一个实施例是一种半导体器件，其包括基底绝缘膜; 形成在所述基底绝缘膜上的氧化物半导体膜; 形成在所述氧化物半导体膜上的栅极绝缘膜; 以及与氧化物半导体膜重叠的栅电极，其间设置有栅极绝缘膜。 基极绝缘膜通过电子自旋共振显示出g值为2.01的信号。 氧化物半导体膜通过电子自旋共振不显示g值为1.93的信号。

公开(公告)号：US20150072470A1

公开(公告)日：2015-03-12

申请号：US14540184

申请日：2014-11-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Miyuki HOSOBA ,  Kosei NODA ,  Hiroki OHARA ,  Toshinari SASAKI ,  Junichiro SAKATA

IPC: H01L29/66 ,  H01L29/786 ,  H01L21/477

CPC classification number: H01L29/66969 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/7869

Abstract: A highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics, and a manufacturing method thereof. In the manufacturing method of the semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region is an oxide semiconductor layer, heat treatment which reduces impurities such as moisture to improve the purity of the oxide semiconductor layer and oxidize the oxide semiconductor layer (heat treatment for dehydration or dehydrogenation) is performed. Not only impurities such as moisture in the oxide semiconductor layer but also those existing in a gate insulating layer are reduced, and impurities such as moisture existing in interfaces between the oxide semiconductor layer and films provided over and under and in contact with the oxide semiconductor layer are reduced.

Abstract translation: 一种高度可靠的半导体器件及其制造方法，其包括具有稳定电特性的薄膜晶体管。 在包括具有沟道形成区域的半导体层是氧化物半导体层的薄膜晶体管的半导体器件的制造方法中，减少诸如水分的杂质的热处理以提高氧化物半导体层的纯度并氧化氧化物 进行半导体层（脱水或脱氢的热处理）。 氧化物半导体层中的水分等杂质，以及存在于栅极绝缘层中的杂质都会降低，氧化物半导体层和氧化物半导体层之间的界面中存在的水分等杂质与氧化物半导体层 减少了

公开(公告)号：US20150060853A1

公开(公告)日：2015-03-05

申请号：US14537232

申请日：2014-11-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari SASAKI ,  Kosei NODA ,  Yuta ENDO

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L29/78696 ,  H01L29/045 ,  H01L29/24 ,  H01L29/247 ,  H01L29/7869 ,  H01L29/78693

Abstract: A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. A p-type oxide semiconductor material is contained in an n-type oxide semiconductor film, whereby carriers which are generated in the oxide semiconductor film without intention can be reduced. This is because electrons generated in the n-type oxide semiconductor film without intention are recombined with holes generated in the p-type oxide semiconductor material to disappear. Accordingly, it is possible to reduce carriers which are generated in the oxide semiconductor film without intention.

Abstract translation: 通过对使用氧化物半导体膜的晶体管赋予稳定的电特性来制造高可靠性的半导体器件。 p型氧化物半导体材料包含在n型氧化物半导体膜中，由此可以减少在氧化物半导体膜中产生的载流子。 这是因为在n型氧化物半导体膜中产生的电子没有意图与在p型氧化物半导体材料中产生的空穴重新组合而消失。 因此，可以无意地减少在氧化物半导体膜中产生的载流子。

公开(公告)号：US20140342498A1

公开(公告)日：2014-11-20

申请号：US14448015

申请日：2014-07-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta ENDO ,  Toshinari SASAKI ,  Kosei NODA

IPC: H01L29/66 ,  H01L29/51 ,  H01L29/423 ,  H01L21/477 ,  H01L21/425

CPC classification number: H01L29/66969 ,  H01L21/02 ,  H01L21/02112 ,  H01L21/02403 ,  H01L21/28 ,  H01L21/425 ,  H01L21/477 ,  H01L29/42384 ,  H01L29/518 ,  H01L29/78618 ,  H01L29/7869

Abstract: A semiconductor device is manufactured using a transistor in which an oxide semiconductor is included in a channel region and variation in electric characteristics due to a short-channel effect is less likely to be caused. The semiconductor device includes an oxide semiconductor film having a pair of oxynitride semiconductor regions including nitrogen and an oxide semiconductor region sandwiched between the pair of oxynitride semiconductor regions, a gate insulating film, and a gate electrode provided over the oxide semiconductor region with the gate insulating film positioned therebetween. Here, the pair of oxynitride semiconductor regions serves as a source region and a drain region of the transistor, and the oxide semiconductor region serves as the channel region of the transistor.

Abstract translation: 使用其中氧化物半导体包括在沟道区域中的晶体管制造半导体器件，并且不太可能引起由于短沟道效应引起的电特性的变化。 半导体器件包括具有一对氧氮化物半导体区域的氧化物半导体膜，该氧氮化物半导体区域包括氮和夹在一对氧氮化物半导体区域之间的氧化物半导体区域，栅极绝缘膜和设置在氧化物半导体区域上的栅电极，栅极绝缘 胶片位于其间。 这里，一对氧氮化物半导体区域用作晶体管的源极区域和漏极区域，氧化物半导体区域用作晶体管的沟道区域。

公开(公告)号：US20140256086A1

公开(公告)日：2014-09-11

申请号：US14284771

申请日：2014-05-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kosei NODA ,  Toshinari SASAKI

IPC: H01L29/66 ,  H01L21/477

CPC classification number: H01L29/66969 ,  H01L21/02164 ,  H01L21/465 ,  H01L21/477 ,  H01L22/10 ,  H01L29/401 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/7869

Abstract: A transistor with superior electric characteristics is manufactured. An oxide insulating film is formed over a substrate, an oxide semiconductor film is formed over the oxide insulating film, heat treatment is then conducted at a temperature at which hydrogen contained in the oxide semiconductor film is desorbed and part of oxygen contained in the oxide insulating film is desorbed, then the heated oxide semiconductor film is etched into a predetermined shape to form an island-shaped oxide semiconductor film, a pair of electrodes is formed over the island-shaped oxide semiconductor film, a gate insulating film is formed over the pair of electrodes and the island-shaped oxide semiconductor film, and a gate electrode is formed over the gate insulating film.

Abstract translation: 制造出具有优异电特性的晶体管。 在衬底上形成氧化物绝缘膜，在氧化物绝缘膜上形成氧化物半导体膜，然后在氧化物半导体膜中所含的氢被解吸的温度和氧化物绝缘中包含的部分氧进行热处理 膜被解吸，然后将加热的氧化物半导体膜蚀刻成预定形状以形成岛状氧化物半导体膜，在岛状氧化物半导体膜上形成一对电极，在该对上形成栅极绝缘膜 的电极和岛状氧化物半导体膜，并且栅极电极形成在栅极绝缘膜上。

公开(公告)号：US20140239297A1

公开(公告)日：2014-08-28

申请号：US14269819

申请日：2014-05-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari SASAKI ,  Hitomi SATO ,  Kosei NODA ,  Yuta ENDO ,  Mizuho IKARASHI ,  Keitaro IMAI ,  Atsuo ISOBE ,  Yutaka OKAZAKI

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606

Abstract: It is an object to manufacture a semiconductor device in which a transistor including an oxide semiconductor has normally-off characteristics, small fluctuation in electric characteristics, and high reliability. First, first heat treatment is performed on a substrate, a base insulating layer is formed over the substrate, an oxide semiconductor layer is formed over the base insulating layer, and the step of performing the first heat treatment to the step of forming the oxide semiconductor layer are performed without exposure to the air. Next, after the oxide semiconductor layer is formed, second heat treatment is performed. An insulating layer from which oxygen is released by heating is used as the base insulating layer.

Abstract translation: 本发明的目的是制造其中包括氧化物半导体的晶体管具有常态特性，电特性波动小，可靠性高的半导体器件。 首先，在基板上进行第一热处理，在基板上形成基极绝缘层，在基底绝缘层上形成氧化物半导体层，对形成氧化物半导体的工序进行第一热处理的工序 在不暴露于空气的情况下执行层。 接下来，在形成氧化物半导体层之后，进行第二热处理。 使用通过加热而释放氧的绝缘层作为基底绝缘层。

公开(公告)号：US20130099237A1

公开(公告)日：2013-04-25

申请号：US13651809

申请日：2012-10-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari SASAKI ,  Kosei NODA ,  Yuhei SATO ,  Yuta ENDO

IPC: H01L21/477 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/42364

Abstract: Hydrogen concentration and oxygen vacancies in an oxide semiconductor film are reduced. Reliability of a semiconductor device which includes a transistor using an oxide semiconductor film is improved. One embodiment of the present invention is a semiconductor device which includes a base insulating film; an oxide semiconductor film formed over the base insulating film; a gate insulating film formed over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween. The base insulating film shows a signal at a g value of 2.01 by electron spin resonance. The oxide semiconductor film does not show a signal at a g value of 1.93 by electron spin resonance.

公开(公告)号：US20250169184A1

公开(公告)日：2025-05-22

申请号：US19029162

申请日：2025-01-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Masashi TSUBUKU ,  Kosei NODA

IPC: H10D86/60 ,  G09G3/20 ,  G09G3/3233 ,  G09G3/3291 ,  G09G3/36 ,  G11C19/18 ,  G11C19/28 ,  H03K17/16 ,  H03K19/003 ,  H03K19/096 ,  H10D30/67 ,  H10D86/40

Abstract: To reduce a leakage current of a transistor so that malfunction of a logic circuit can be suppressed. The logic circuit includes a transistor which includes an oxide semiconductor layer having a function of a channel formation layer and in which an off current is 1×10−13 A or less per micrometer in channel width. A first signal, a second signal, and a third signal that is a clock signal are input as input signals. A fourth signal and a fifth signal whose voltage states are set in accordance with the first to third signals which have been input are output as output signals.

公开(公告)号：US20250107154A1

公开(公告)日：2025-03-27

申请号：US18973522

申请日：2024-12-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Masashi TSUBUKU ,  Kosei NODA

IPC: H01L29/786 ,  H01L21/66 ,  H01L27/02 ,  H01L27/12

Abstract: A logic circuit includes a thin film transistor having a channel formation region formed using an oxide semiconductor, and a capacitor having terminals one of which is brought into a floating state by turning off the thin film transistor. The oxide semiconductor has a hydrogen concentration of 5×1019 (atoms/cm3) or less and thus substantially serves as an insulator in a state where an electric field is not generated. Therefore, off-state current of a thin film transistor can be reduced, leading to suppressing the leakage of electric charge stored in a capacitor, through the thin film transistor. Accordingly, a malfunction of the logic circuit can be prevented. Further, the excessive amount of current which flows in the logic circuit can be reduced through the reduction of off-state current of the thin film transistor, resulting in low power consumption of the logic circuit.

公开(公告)号：US20230395726A1

公开(公告)日：2023-12-07

申请号：US18237431

申请日：2023-08-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Masashi TSUBUKU ,  Kosei NODA

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/02

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/78696 ,  H01L27/0207 ,  H01L22/34

Abstract: A logic circuit includes a thin film transistor having a channel formation region formed using an oxide semiconductor, and a capacitor having terminals one of which is brought into a floating state by turning off the thin film transistor. The oxide semiconductor has a hydrogen concentration of 5×1019 (atoms/cm3) or less and thus substantially serves as an insulator in a state where an electric field is not generated. Therefore, off-state current of a thin film transistor can be reduced, leading to suppressing the leakage of electric charge stored in a capacitor, through the thin film transistor. Accordingly, a malfunction of the logic circuit can be prevented. Further, the excessive amount of current which flows in the logic circuit can be reduced through the reduction of off-state current of the thin film transistor, resulting in low power consumption of the logic circuit.