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    Image processing apparatus, image processing method and electronic equipment
    42.
    发明授权
    Image processing apparatus, image processing method and electronic equipment 有权
    图像处理装置，图像处理方法和电子设备

    公开(公告)号：US08754966B2

    公开(公告)日：2014-06-17

    申请号：US13962022

    申请日：2013-08-08

    Applicant: Sony Corporation

    Inventor： Koji Kikuchi ,  Shigeyuki Baba ,  Toshifumi Wakano

    IPC: H04N17/02 ,  H04N5/335

    CPC classification number: H04N5/76 ,  H04N5/359 ,  H04N5/374 ,  H04N9/045

    Abstract: Disclosed herein is an image processing apparatus including: a storage section configured to store a correction matrix correcting crosstalk generated by a light or electron leak from an adjacent pixel existing among a plurality of pixels for receiving light in an imaging device; and a processing section configured to carry out processing to apply the correction matrix stored in the storage section to an image signal generated by the imaging device for each of the pixels.

    Abstract translation: 本文公开了一种图像处理装置，包括：存储部，被配置为存储校正矩阵，校正由存在于用于在成像装置中接收光的多个像素之间的相邻像素的光或电子泄漏产生的串扰; 以及处理部，被配置为执行将存储在存储部中的校正矩阵应用于由所述成像装置针对每个像素生成的图像信号的处理。

    Solid-state imaging device, method of manufacturing the same, and electronic apparatus
    43.
    发明授权
    Solid-state imaging device, method of manufacturing the same, and electronic apparatus 有权

    公开(公告)号：US11094725B2

    公开(公告)日：2021-08-17

    申请号：US16121418

    申请日：2018-09-04

    Applicant: SONY CORPORATION

    Inventor： Yusuke Tanaka ,  Toshifumi Wakano ,  Keiji Tatani ,  Takashi Nagano ,  Hayato Iwamoto ,  Keiichi Nakazawa ,  Tomoyuki Hirano ,  Shinpei Yamaguchi ,  Shunsuke Maruyama

    IPC: H01L27/148 ,  H01L27/146

    Abstract: Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device includes a silicon substrate, and at least a first photodiode formed in the silicon substrate. The device also includes an epitaxial layer with a first surface adjacent a surface of the silicon substrate, and a transfer transistor with a gate electrode that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided. A floating diffusion is formed in an epitaxial layer, and a plurality of transfer gate electrodes that are each electrically connected to the floating diffusion by one of the transfer gate electrodes is provided.

    Solid-state imaging device and electronic device with transistor groups
    44.
    发明授权
    Solid-state imaging device and electronic device with transistor groups 有权

    公开(公告)号：US10659705B2

    公开(公告)日：2020-05-19

    申请号：US16034104

    申请日：2018-07-12

    Applicant: SONY CORPORATION

    Inventor： Takuya Sano ,  Toshifumi Wakano

    IPC: H04N5/359 ,  H01L27/146 ,  H04N5/374 ,  H04N5/355 ,  H04N5/3745

    Abstract: The present disclosure relates to a solid-state imaging device and an electronic device for suppressing deterioration of pixel characteristics while guaranteeing the operating range of VSLs. A solid-state imaging device according to a first aspect of this disclosure has multiple pixel sharing units each including multiple photoelectric conversion sections each configured to correspond to a pixel, an accumulation section configured to be shared by the plurality of photoelectric conversion sections and to accumulate charges generated thereby, and multiple transistors configured to control reading of the charges accumulated in the accumulation section. The plurality of transistors in each pixel sharing unit are arranged symmetrically. The plurality of transistors include a transistor that functions as a switch to change conversion efficiency. The present disclosure may be applied to back-illuminated CMOS image sensors, for example.

    Solid-state imaging device and electronic device with symmetrical transistor groups
    46.
    发明授权
    Solid-state imaging device and electronic device with symmetrical transistor groups 有权

    公开(公告)号：US10225497B2

    公开(公告)日：2019-03-05

    申请号：US15559914

    申请日：2016-03-24

    Applicant: SONY CORPORATION

    Inventor： Takuya Sano ,  Toshifumi Wakano

    IPC: H04N5/359 ,  H01L27/146 ,  H04N5/355 ,  H04N5/3745

    Abstract: The present disclosure relates to a solid-state imaging device and an electronic device for suppressing deterioration of pixel characteristics while guaranteeing the operating range of VSLs. A solid-state imaging device according to a first aspect of this disclosure has multiple pixel sharing units each including multiple photoelectric conversion sections each configured to correspond to a pixel, an accumulation section configured to be shared by the plurality of photoelectric conversion sections and to accumulate charges generated thereby, and multiple transistors configured to control reading of the charges accumulated in the accumulation section. The plurality of transistors in each pixel sharing unit are arranged symmetrically. The plurality of transistors include a transistor that functions as a switch to change conversion efficiency. The present disclosure may be applied to back-illuminated CMOS image sensors, for example.

    Solid-state image sensor, imaging device, and electronic equipment
    47.
    发明授权
    Solid-state image sensor, imaging device, and electronic equipment 有权

    公开(公告)号：US10128300B2

    公开(公告)日：2018-11-13

    申请号：US15812179

    申请日：2017-11-14

    Applicant: Sony Corporation

    Inventor： Nanako Kato ,  Toshifumi Wakano ,  Yusuke Tanaka ,  Yusuke Otake

    IPC: H01L33/00 ,  H01L27/146 ,  H04N5/3745

    Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.

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