公开(公告)号：US20170256702A1

公开(公告)日：2017-09-07

申请号：US15177176

申请日：2016-06-08

Applicant: Samsung Electronics Co., LTD.

Inventor： Xueti Tang ,  Mohamad Towfik Krounbi ,  Gen Feng ,  Vladimir Nikitin

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  G11C11/16

CPC classification number: H01L43/02 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. Providing the pinned and/or free layer(s) includes providing a magnetic layer including a glass-promoting component, providing a sacrificial oxide layer on the magnetic layer, providing a sacrificial layer on the sacrificial oxide layer and performing at least one anneal of the magnetic layer, the sacrificial oxide layer and the sacrificial layer at anneal temperature(s) greater than 300 degrees Celsius and not exceeding 475 degrees Celsius. The magnetic layer is amorphous as-deposited but is at least partially crystallized after the anneal(s). The sacrificial layer includes a sink for the glass-promoting component. The sacrificial layer and the sacrificial oxide layer are removed after the anneal(s).

公开(公告)号：US20140264671A1

公开(公告)日：2014-09-18

申请号：US14048329

申请日：2013-10-08

Applicant: Samsung Electronics Co., LTD.

Inventor： Roman Chepulskyy ,  Xueti Tang ,  Dmytro Apalkov ,  Alexey Vasilyevitch Khvalkovskiy ,  Vladimir Nikitin ,  Mohamad Towfik Krounbi

IPC: H01L43/02 ,  H01L43/10

CPC classification number: H01L43/10 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/18 ,  G11C11/5607 ,  H01L43/08 ,  H01L43/12

Abstract: A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. A portion of the magnetic junction includes at least one magnetic substructure. The magnetic substructure includes at least one Fe layer and at least one nonmagnetic insertion layer. The at least one Fe layer shares at least one interface with the at least one nonmagnetic insertion layer. Each of the at least one nonmagnetic insertion layer consists of at least one of W, I, Hf, Bi, Zn, Mo, Ag, Cd, Os and In.

Abstract translation: 描述了一种用于提供可用于磁性装置中的磁结的方法和系统。 磁结包括参考层，非磁性间隔层和自由层。 非磁性间隔层位于参考层和自由层之间。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。 磁结的一部分包括至少一个磁性子结构。 磁性亚结构包括至少一个Fe层和至少一个非磁性插入层。 所述至少一个Fe层与所述至少一个非磁性插入层共享至少一个界面。 所述至少一个非磁性插入层中的每一个由W，I，Hf，Bi，Zn，Mo，Ag，Cd，Os和In中的至少一种构成。