METHOD OF MANUFACTURING DISPLAY APPARATUS WITH SAW TOUCH SENSOR
    41.
    发明申请
    METHOD OF MANUFACTURING DISPLAY APPARATUS WITH SAW TOUCH SENSOR 失效
    用SAW触摸传感器制造显示装置的方法

    公开(公告)号:US20090156083A1

    公开(公告)日:2009-06-18

    申请号:US12278697

    申请日:2006-02-08

    IPC分类号: H01J9/24

    CPC分类号: G06F3/0436 G06F3/0412

    摘要: First electrodes partially configuring light-emitting elements are patterned in the form of stripes on a first major surface of a transparent substrate. After the step of forming the first electrodes, piezoelectric elements functioning a SAW touch sensor is formed on a second major surface of the transparent substrate. Furthermore, after the step of forming the piezoelectric elements, the light-emitting elements forming step of forming light-emitting elements on the first electrodes which are patterned in advance is sequentially executed.Since the first electrodes are formed in the form of stripes, the piezoelectric elements can be prevented from being damaged by an etching solution used at this time. After the formation of the piezoelectric elements, since the step of forming the light-emitting elements is executed, the light-emitting elements can be prevented from being damaged by receiving heat in the formation of the piezoelectric elements.

    摘要翻译: 部分地配置发光元件的第一电极在透明衬底的第一主表面上以条纹的形式被图案化。 在形成第一电极的步骤之后,在透明基板的第二主表面上形成用作SAW触摸传感器的压电元件。 此外,在形成压电元件的步骤之后,依次执行在预先图案化的第一电极上形成发光元件的形成步骤的发光元件。 由于第一电极形成为条状,因此可以防止压电元件被此时使用的蚀刻溶液损坏。 在形成压电元件之后,由于执行形成发光元件的步骤,可以通过在压电元件的形成中受热来防止发光元件的损坏。

    Apparatus for manufacturing silicon single crystal, method for manufacturing silicon single crystal, and silicon single crystal
    42.
    发明授权
    Apparatus for manufacturing silicon single crystal, method for manufacturing silicon single crystal, and silicon single crystal 有权
    硅单晶的制造装置,单晶硅的制造方法以及硅单晶

    公开(公告)号:US07470326B2

    公开(公告)日:2008-12-30

    申请号:US11826262

    申请日:2007-07-13

    IPC分类号: C30B35/00

    摘要: The apparatus for manufacturing a silicon single crystal includes: a crucible for storing molten silicon; a pulling-up device for pulling up a silicon single crystal from the molten silicon in the crucible to grow; a detecting device for detecting a position of the crucible in a vertical direction; and a control device for controlling a pulling rate for the silicon single crystal by the pulling-up device, based on the detected position of the crucible.

    摘要翻译: 制造硅单晶的装置包括:用于储存熔融硅的坩埚; 用于从坩埚中的熔融硅提起硅单晶的拉起装置成长; 用于检测坩埚在垂直方向上的位置的检测装置; 以及控制装置,用于根据所检测到的坩埚的位置,通过上拉装置控制硅单晶的拉拔速度。

    Super-resolution device, super-resolution method, super-resolution program, and super-resolution system
    43.
    发明申请
    Super-resolution device, super-resolution method, super-resolution program, and super-resolution system 有权
    超分辨率设备,超分辨率方法,超分辨率程序和超分辨率系统

    公开(公告)号:US20080186390A1

    公开(公告)日:2008-08-07

    申请号:US12080230

    申请日:2008-03-31

    IPC分类号: H04N5/228

    CPC分类号: G06T3/4053

    摘要: An albedo estimating section produces an albedo image of an object from an original image captured by an image-capturing section by using light source information estimated by a light source information estimating section and shape information of the object obtained by a shape information obtaining section. An albedo super-resolution section performs super-resolution of the albedo image according to a conversion rule obtained from an albedo DB. A super-resolution section produces a high-resolution image obtained by performing super-resolution of the original image by using the super-resolution albedo image, the light source information and the shape information.

    摘要翻译: 反照率估计部分通过使用由光源信息估计部分估计的光源信息和由形状信息获取部分获得的对象的形状信息,从由图像拍摄部分拍摄的原始图像产生对象的反照率图像。 反照率超分辨率部分根据从反照率DB获得的转换规则执行反照率图像的超分辨率。 超分辨率部分通过使用超分辨率反照率图像,光源信息和形状信息来产生通过执行原始图像的超分辨率而获得的高分辨率图像。

    Apparatus for manufacturing silicon single crystal, method for manufacturing silicon single crystal, and silicon single crystal
    45.
    发明申请
    Apparatus for manufacturing silicon single crystal, method for manufacturing silicon single crystal, and silicon single crystal 有权
    硅单晶的制造装置,单晶硅的制造方法以及硅单晶

    公开(公告)号:US20070261632A1

    公开(公告)日:2007-11-15

    申请号:US11826262

    申请日:2007-07-13

    IPC分类号: C30B15/20

    摘要: The apparatus for manufacturing a silicon single crystal includes: a crucible for storing molten silicon; a pulling-up device for pulling up a silicon single crystal from the molten silicon in the crucible to grow; a detecting device for detecting a position of the crucible in a vertical direction; and a control device for controlling a pulling rate for the silicon single crystal by the pulling-up device, based on the detected position of the crucible.

    摘要翻译: 制造硅单晶的装置包括:用于储存熔融硅的坩埚; 用于从坩埚中的熔融硅提起硅单晶的拉起装置成长; 用于检测坩埚在垂直方向上的位置的检测装置; 以及控制装置,用于根据所检测到的坩埚的位置,通过上拉装置控制硅单晶的拉拔速度。

    Crystalline inorganic porous material and production process therefor
    47.
    发明授权
    Crystalline inorganic porous material and production process therefor 失效
    结晶无机多孔材料及其制备方法

    公开(公告)号:US07267812B2

    公开(公告)日:2007-09-11

    申请号:US10650981

    申请日:2003-08-29

    IPC分类号: C01B39/38

    摘要: A crystalline inorganic porous material having two different types of pores which are macropores having a diameter in the micrometer range and micropores having a diameter in the angstrom range, at least part of the skeleton thereof having a zeolite structure. The crystalline inorganic porous material of the present invention has macropores and micropores and enables the effective transport of a substance by the macropores, thereby improving the effectiveness of the micropores of zeolite. Since a molded product can be obtained without using a binder, the selectivity of a reaction of interest can be improved in an acidic catalytic reaction or precision separation in adsorption/separation becomes possible.

    摘要翻译: 一种结晶无机多孔材料,其具有两种不同类型的孔,它们是直径在微米范围内的微孔,其微孔的直径在埃范围内,其骨架的至少一部分具有沸石结构。 本发明的结晶无机多孔体具有大孔和微孔,能够通过大孔有效地输送物质,从而提高沸石微孔的有效性。 由于可以在不使用粘合剂的情况下获得模制产品,因此在酸性催化反应中可以提高感兴趣的反应的选择性,或者可以在吸附/分离中进行精密分离。

    Memory testing method
    50.
    发明授权
    Memory testing method 失效
    内存测试方法

    公开(公告)号:US06721915B2

    公开(公告)日:2004-04-13

    申请号:US09750098

    申请日:2000-12-29

    IPC分类号: G06F1100

    CPC分类号: G11C29/10 G11C29/56

    摘要: In the case where the internal configuration is different in each memory (in the case where the correspondence information between the program address designated by the testing program and the physical address in the memory is different), the correspondence information of each memory is input from externally to the memory testing program, so that it becomes possible to use versatilely the memory testing program. Furthermore, even in the case where the internal configuration is unclear, it becomes possible to presume the internal configuration, so that it becomes possible to use versatilely the memory testing program for various memories.

    摘要翻译: 在每个存储器内部配置不同的情况下(在由测试程序指定的程序地址与存储器中的物理地址之间的对应信息不同的情况下),每个存储器的对应信息从外部输入 到内存测试程序,使得可以通用的内存测试程序。 此外,即使在内部结构不清楚的情况下,也可以设定内部结构,从而可以通用地使用各种存储器的存储器测试程序。