公开(公告)号：US10181531B2

公开(公告)日：2019-01-15

申请号：US15193564

申请日：2016-06-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shinya Sasagawa ,  Motomu Kurata ,  Satoru Okamoto ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L21/311 ,  H01L21/3213

Abstract: A minute transistor is provided. A transistor with small parasitic capacitance is provided. A transistor with high frequency characteristics is provided. A semiconductor device including the transistor is provided. A semiconductor device includes an oxide semiconductor, a first conductor and a second insulator embedded in a first insulator, a second conductor and a third conductor. Edges of the second conductor and the third conductor facing each other each has a taper angle of 30 degree or more and 90 degree or less.

公开(公告)号：US09905657B2

公开(公告)日：2018-02-27

申请号：US15408719

申请日：2017-01-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta Endo ,  Hideomi Suzawa ,  Kazuya Hanaoka ,  Shinya Sasagawa ,  Satoru Okamoto

IPC: H01L29/40 ,  H01L29/786 ,  H01L29/66 ,  H01L29/423 ,  H01L29/49 ,  H01L27/12 ,  H01L27/146

CPC classification number: H01L29/78696 ,  H01L27/1225 ,  H01L27/14616 ,  H01L29/401 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78693 ,  H01L2029/42388

Abstract: A semiconductor device in which parasitic capacitance is reduced is provided. A first oxide insulating layer and a first oxide semiconductor layer are sequentially formed over a first insulating layer. A first conductive layer is formed over the first oxide semiconductor layer and etched to form a second conductive layer. The first oxide insulating layer and the first oxide semiconductor layer are etched with the second conductive layer as a mask to form a second oxide insulating layer and a second oxide semiconductor layer. A planarized insulating layer is formed over the first insulating layer and the second conductive layer. A second insulating layer, a source electrode layer, and a drain electrode layer are formed by etching the planarized insulating layer and the second conductive layer. A third oxide insulating layer, a gate insulating layer, and a gate electrode layer are formed over the second oxide semiconductor layer.

公开(公告)号：US20170075382A1

公开(公告)日：2017-03-16

申请号：US15270264

申请日：2016-09-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoru Okamoto ,  Shunpei Yamazaki

IPC: G06F1/16 ,  G09G5/22 ,  H04M1/725 ,  H01L27/32 ,  H04M1/02 ,  G06F3/041 ,  G02F1/1333

CPC classification number: G06F1/1616 ,  G02F1/13338 ,  G02F2203/02 ,  G06F1/1626 ,  G06F1/1637 ,  G06F1/1643 ,  G06F1/1647 ,  G06F1/1684 ,  G06F1/1686 ,  G06F3/0412 ,  G06F3/14 ,  G09G3/20 ,  G09G5/22 ,  G09G2300/0842 ,  G09G2340/0407 ,  H01L27/323 ,  H01L27/3234 ,  H01L27/3244 ,  H04M1/0214 ,  H04M1/0247 ,  H04M1/72519 ,  H04M2250/16 ,  H04M2250/22

Abstract: When image data is displayed on the display portion of a conventional mobile telephone, characters cannot be displayed thereon, and thus the image data and the characters cannot be simultaneously displayed. In a portable electronic device according to the present invention, a cover member having a first display device (101) for displaying an image (digital still image or the like) and a second display device (102) having a touch input operational portion (for displaying characters, symbols, or the like) are attached to each other so as to allow opening and closing.

Abstract translation: 当在常规移动电话的显示部分上显示图像数据时，不能在其上显示字符，因此不能同时显示图像数据和字符。 在根据本发明的便携式电子设备中，具有用于显示图像的第一显示设备（101）（数字静态图像等）和具有触摸输入操作部分的第二显示设备（102）的盖构件（用于 显示字符，符号等）彼此附接以允许打开和关闭。