公开(公告)号：US07838317B2

公开(公告)日：2010-11-23

申请号：US12544868

申请日：2009-08-20

申请人： Sang Ho Yoon ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

发明人： Sang Ho Yoon ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

IPC分类号： H01L21/56

CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L33/20

摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.

摘要翻译： 垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。 与n电极接触的n型氮化物半导体层的表面是平坦的。

公开(公告)号：US07436001B2

公开(公告)日：2008-10-14

申请号：US11490254

申请日：2006-07-21

申请人： Jae Hoon Lee ,  Bang Won Oh ,  Hee Seok Choi ,  Jeong Tak Oh ,  Seok Beom Choi ,  Su Yeol Lee

发明人： Jae Hoon Lee ,  Bang Won Oh ,  Hee Seok Choi ,  Jeong Tak Oh ,  Seok Beom Choi ,  Su Yeol Lee

IPC分类号： H01L27/15

CPC分类号： H01L33/22 ,  H01L33/14

摘要： A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED includes an n-electrode, a first n-type GaN layer, a first AlGaN layer, a GaN layer, a second AlGaN layer, a second n-type GaN layer, an active layer, a p-type GaN layer, and a structure support layer. The first n-type GaN layer has uneven patterns having a plurality of protuberances. The first AlGaN layer is formed under the first n-type GaN layer, and the GaN layer is formed under the first AlGaN layer. The active layer is formed under the second n-type GaN layer, and the p-type GaN layer is formed under the active layer. A p-electrode is formed under the p-type GaN layer, and the structure support layer is formed under the p-electrode.

摘要翻译： 提供了一种垂直GaN基LED及其制造方法。 垂直GaN基LED包括n电极，第一n型GaN层，第一AlGaN层，GaN层，第二AlGaN层，第二n型GaN层，有源层，p型 GaN层和结构支撑层。 第一n型GaN层具有具有多个突起的不均匀图案。 第一AlGaN层形成在第一n型GaN层下方，并且GaN层形成在第一AlGaN层的下方。 有源层形成在第二n型GaN层下面，p型GaN层形成在有源层下面。 在p型GaN层的下方形成有p电极，在p电极的下方形成有结构支撑层。

公开(公告)号：US20080105889A1

公开(公告)日：2008-05-08

申请号：US11976791

申请日：2007-10-29

申请人： Tae Jun Kim ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

发明人： Tae Jun Kim ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/22 ,  H01L33/32

摘要： There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.

摘要翻译： 提供了一种制造氮化物半导体发光器件的方法和通过该方法制造的氮化物半导体发光器件，该方法包括：通过依次生长第一导电氮化物层，有源层和第二导电性来形成发光结构 在氮化物单晶生长的预备衬底上形成氮化物层; 根据最终发光器件的尺寸分离发光结构; 在所述发光结构上形成导电基板; 抛光初步衬底的底面以减小初步衬底的厚度; 通过机加工初步底材形成不均匀的表面结构; 选择性地去除所述初步衬底以暴露所述第一导电型氮化物层的部分; 以及通过选择性地去除所述预备衬底而在所述第一导电型氮化物层的部分上形成电极。

公开(公告)号：US20080012028A1

公开(公告)日：2008-01-17

申请号：US11822186

申请日：2007-07-03

申请人： Sang Ho Yoon ,  Su Yeol Lee ,  Dae Yeon Kim

发明人： Sang Ho Yoon ,  Su Yeol Lee ,  Dae Yeon Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/10 ,  G02F1/13362 ,  H01L33/08 ,  H01L33/20

摘要： A polarized semiconductor light emitting device includes a semiconductor structure having a first conductivity semiconductor layer, an active layer and a second conductivity semiconductor layer sequentially stacked. Also, the semiconductor structure further includes a plurality of light guide parts defined by a plurality of grooves arranged along a predetermined direction. The grooves extend from the second conductivity semiconductor layer with a depth reaching at least the active layer, and the light guide parts have a length greater than a width thereof to selectively emit a polarized component in a length direction thereof.

摘要翻译： 偏振半导体发光器件包括具有依次堆叠的第一导电半导体层，有源层和第二导电半导体层的半导体结构。 此外，半导体结构还包括由沿着预定方向布置的多个槽限定的多个导光部。 凹槽从第二导电半导体层延伸到至少达到有源层的深度，并且导光部分的长度大于其宽度，以在其长度方向上选择性地发射偏振分量。

公开(公告)号：US20070267640A1

公开(公告)日：2007-11-22

申请号：US11436651

申请日：2006-05-19

申请人： Jae Hoon Lee ,  Hee Seok Choi ,  Seok Beom Choi ,  Jeong Tak Oh ,  Su Yeol Lee

发明人： Jae Hoon Lee ,  Hee Seok Choi ,  Seok Beom Choi ,  Jeong Tak Oh ,  Su Yeol Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L2933/0083

摘要： The present invention relates to a semiconductor light emitting diode. The semiconductor light emitting diode includes a substrate; an n-type nitride semiconductor layer that is formed on the substrate; an active layer that is formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer that is formed on the active layer; a first undoped GaN layer that is formed on the p-type nitride semiconductor layer; an AlGaN layer that is formed on the first undoped GaN layer so as to provide a two-dimensional electron gas layer to the interface with the first undoped GaN layer; a second undoped GaN layer that is formed on the AlGaN layer and has irregularities such that the light generated in the active layer is not internally reflected toward the active layer; a p-type transparent electrode that is formed on the second undoped GaN layer; and an n-type electrode and p-type electrode that are formed to be respectively connected onto the n-type nitride semiconductor layer and the p-type transparent electrode.

摘要翻译： 本发明涉及一种半导体发光二极管。 半导体发光二极管包括基板; 形成在所述基板上的n型氮化物半导体层; 形成在n型氮化物半导体层上的有源层; 形成在有源层上的p型氮化物半导体层; 在p型氮化物半导体层上形成的第一未掺杂GaN层; AlGaN层，形成在第一未掺杂的GaN层上，以便向与第一未掺杂GaN层的界面提供二维电子气层; 第二未掺杂的GaN层，其形成在AlGaN层上并且具有凹凸，使得在有源层中产生的光不向有源层内部反射; 形成在第二未掺杂GaN层上的p型透明电极; 以及形成为分别连接在n型氮化物半导体层和p型透明电极上的n型电极和p型电极。