公开(公告)号：US07504691B2

公开(公告)日：2009-03-17

申请号：US11469456

申请日：2006-08-31

申请人： Chanho Park ,  Qi Wang

发明人： Chanho Park ,  Qi Wang

IPC分类号： H01L31/00

CPC分类号： H01L29/7813 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/49 ,  H01L29/4933 ,  H01L29/66734 ,  H01L29/7782 ,  Y02P70/605

摘要： Devices, methods, and processes that improve immunity to transient voltages and reduce parasitic impedances. Immunity to unclamped inductive switching events is improved. For example, a trench-gated power MOSFET device having a SiGe source is provided, where the SiGe source reduces parasitic npn transistor gain by reducing hole current in the body or well region, thereby decreasing the likelihood of a latch-up condition. A trench-gated power MOSFET device having a SiGe body or well region is also provided. A SiGe body reduces hole current when the body diode is turned on, thereby reducing reverse recovery power losses. Other device characteristics are also improved. For example, parasitic gate impedance can reduced through the use of a poly SiGe gate. Also, channel resistance can be reduced through the use of a SiGe layer near the device's gate and a thick oxide region can be formed under the trench gate to reduce gate-to-drain capacitance.

摘要翻译： 提高对瞬态电压的抗扰度并减少寄生阻抗的器件，方法和过程。 提高对松开感应开关事件的抗扰度。 例如，提供了具有SiGe源的沟槽门控功率MOSFET器件，其中SiGe源通过减少主体或阱区中的空穴电流来降低寄生npn晶体管增益，从而降低闩锁状态的可能性。 还提供了具有SiGe体或阱区的沟槽栅功率MOSFET器件。 当体二极管导通时，SiGe体减小空穴电流，从而降低反向恢复功率损耗。 其他装置特性也得到改善。 例如，通过使用多晶SiGe栅极可以减小寄生栅极阻抗。 此外，可以通过在器件栅极附近使用SiGe层来减小沟道电阻，并且可以在沟槽栅极下形成厚的氧化物区域以减小栅极 - 漏极电容。

公开(公告)号：US20090064378A1

公开(公告)日：2009-03-05

申请号：US12197137

申请日：2008-08-22

申请人： Qi Wang ,  Patrice DuBois

发明人： Qi Wang ,  Patrice DuBois

IPC分类号： A01H5/00 ,  C07H21/00 ,  C11B1/10 ,  C07K14/415 ,  C12N5/04

CPC分类号： C12N15/8234

摘要： The present invention provides novel non-coding gene regulatory element polynucleotide molecules isolated or identified from the beta-conglycinin gene of Glycine max and useful for expressing transgenes in plants. The invention further discloses compositions, polynucleotide constructs, transformed host cells, transgenic plants and seeds comprising the regulatory polynucleotide molecules, and methods for preparing and using the same.

摘要翻译： 本发明提供从大豆的β-伴大豆球蛋白基因中分离或鉴定并用于在植物中表达转基因的新型非编码基因调控元件多核苷酸分子。 本发明还公开了组合物，多核苷酸构建体，转化的宿主细胞，转基因植物和包含调节性多聚核苷酸分子的种子，以及制备和使用其的方法。

公开(公告)号：US20090050958A1

公开(公告)日：2009-02-26

申请号：US12206246

申请日：2008-09-08

申请人： Qi Wang ,  Amber Crellin-Ngo ,  Hossein Paravi

发明人： Qi Wang ,  Amber Crellin-Ngo ,  Hossein Paravi

IPC分类号： H01L29/06 ,  H01L29/78 ,  H01L21/205

CPC分类号： H01L29/0878 ,  H01L29/167 ,  H01L29/36 ,  H01L29/7802 ,  H01L29/7813

摘要： A semiconductor device includes a silicon substrate heavily-doped with phosphorous. A spacer layer is disposed over the substrate and is doped with dopant atoms having a diffusion coefficient in the spacer layer material that is less than the diffusion coefficient of phosphorous in silicon. An epitaxial layer is also disposed over the substrate. A device layer is disposed over the substrate, and over the spacer layer.

摘要翻译： 半导体器件包括用磷重掺杂的硅衬底。 间隔层设置在衬底上并且掺杂有在间隔层材料中具有小于硅中磷的扩散系数的扩散系数的掺杂剂原子。 外延层也设置在衬底上。 器件层设置在衬底上并且在间隔层上方。

公开(公告)号：US20080241341A1

公开(公告)日：2008-10-02

申请号：US12024237

申请日：2008-02-01

申请人： Qi Wang ,  Tanya Fagaly ,  Ronald Bassuner ,  Jihong Liang ,  Tim N. Oulmassov ,  John Dabrowski

发明人： Qi Wang ,  Tanya Fagaly ,  Ronald Bassuner ,  Jihong Liang ,  Tim N. Oulmassov ,  John Dabrowski

IPC分类号： A23K1/14 ,  C12N15/11 ,  A01H5/00 ,  C12N5/10 ,  C12N1/15 ,  C12N1/21 ,  A23L1/20 ,  A23D9/00

CPC分类号： C12N15/8254

摘要： The present invention relates to the field of plant genetic engineering. More specifically, the present invention relates to seed specific gene expression. The present invention provides promoters capable of transcribing heterologous nucleic acid sequences in seeds, and methods of modifying, producing, and using the same.

摘要翻译： 本发明涉及植物遗传工程领域。 更具体地，本发明涉及种子特异性基因表达。 本发明提供能够转录种子中的异源核酸序列的启动子，以及修饰，产生和使用它们的方法。

公开(公告)号：US20080126999A1

公开(公告)日：2008-05-29

申请号：US11588927

申请日：2006-10-26

申请人： Qi Wang

发明人： Qi Wang

IPC分类号： G06F17/50

CPC分类号： G06F17/5022 ,  G06F2217/78

摘要： Method and system for conducting low-power design explorations are disclosed. The method includes receiving an RTL netlist of a circuit design, creating one or more power requirement files, wherein each power requirement file comprises power commands corresponding to the RTL netlist, generating one or more low-power RTL netlists using the corresponding one or more power requirement files and the RTL netlist, and conducting low-power design explorations using the one or more low-power RTL netlists.

摘要翻译： 公开了用于进行低功率设计探索的方法和系统。 该方法包括接收电路设计的RTL网表，创建一个或多个功率需求文件，其中每个功率需求文件包括与RTL网表相对应的功率命令，使用相应的一个或多个功率生成一个或多个低功率RTL网表 需求文件和RTL网表，并使用一个或多个低功耗RTL网表进行低功耗设计探索。

公开(公告)号：US20080107642A1

公开(公告)日：2008-05-08

申请号：US11852155

申请日：2007-09-07

申请人： Debbie Law ,  Qi Wang ,  Robert DuBridge ,  Vinay Bhaskar

发明人： Debbie Law ,  Qi Wang ,  Robert DuBridge ,  Vinay Bhaskar

IPC分类号： A61K39/395 ,  C12N5/06 ,  A61P43/00 ,  C07K16/18

CPC分类号： C07K14/705 ,  A61K39/39558 ,  A61K45/06 ,  A61K2039/505 ,  C07K16/28 ,  C07K16/30 ,  C07K16/3069 ,  C07K2317/56 ,  C07K2317/77 ,  C07K2319/30 ,  A61K2300/00

摘要： GPR64 antibody compositions are provided. These antibodies may be used for diagnosis or treatment of cancer, especially ovarian cancer, Ewing's sarcoma, uterine cancer, and other GPR64 expressing tumor types.

摘要翻译： 提供GPR64抗体组合物。 这些抗体可用于诊断或治疗癌症，特别是卵巢癌，尤因氏肉瘤，子宫癌和其他表达GPR64的肿瘤类型。

公开(公告)号：US20070288744A1

公开(公告)日：2007-12-13

申请号：US11587562

申请日：2005-03-31

申请人： Qi Wang

发明人： Qi Wang

IPC分类号： H04L9/00

CPC分类号： H04L63/0428 ,  G06Q20/027 ,  H04L9/0844 ,  H04L63/06 ,  H04L63/08 ,  H04L2463/062

摘要： The method of secure communication between the endpoints is used for the secret communication between endpoints locating in different gatekeeper management area, and the method includes: in the process of the caller endpoint calling the callee endpoint, the home gatekeeper of the callee endpoint generates the share secret key between the caller endpoint and the callee endpoint; the secure communication process is performed between the caller endpoint and the callee endpoint according to the share secret key. According to the secure communication method between the endpoints, the invention makes that secret communication mechanism between the endpoints locating the different gatekeeper management area has better expansibility and higher efficiency.

摘要翻译： 端点之间的安全通信方法用于定位在不同网守管理区域的端点之间的秘密通信，该方法包括：在主叫端点呼叫被叫端点的过程中，被叫方端点的归属网守产生共享 主叫端点和被叫终端之间的秘密密钥; 根据共享秘密密钥在呼叫者端点和被叫方端点之间执行安全通信处理。 根据端点之间的安全通信方式，本发明使定位不同网守管理区域的端点之间的秘密通信机制具有更好的可扩展性和更高的效率。

公开(公告)号：US20070283035A1

公开(公告)日：2007-12-06

申请号：US11766320

申请日：2007-06-21

申请人： Qi Wang

发明人： Qi Wang

IPC分类号： G06F15/16

CPC分类号： H04L65/604 ,  H04L47/10 ,  H04L47/2416 ,  H04L47/25 ,  H04L47/266 ,  H04L47/30 ,  H04L65/80 ,  H04N7/17318 ,  H04N21/2401 ,  H04N21/4307 ,  H04N21/4392 ,  H04N21/44004

摘要： Embodiments of the present invention disclose a method for buffering streaming media, including: determining whether there is no free buffer chunk to buffering streaming media currently in a playing buffer; if so, stopping downloading streaming media from the network; otherwise, buffering the streaming media downloaded from the network in the playing buffer; determining whether the time for playing the streaming media after being buffered in the playing buffer is later than the time for playing the steaming media according to the playing speed; if so, stopping playing streaming media in the buffer chunk; otherwise, playing streaming media in the buffer chunk. In accordance with the present invention, the problem of covering streaming media not being played in playing buffer and playing streaming media disconnectedly caused by the difference between the speed of downloading and playing streaming media is avoided by respectively controlling the process of downloading and playing streaming media. In view of the above, it is possible to guarantee that no error occurs in the process of buffering and playing streaming media, and ensure the quality for playing streaming media. Embodiments of the present invention further disclose an apparatus for buffering streaming media.

摘要翻译： 本发明的实施例公开了一种用于缓冲流媒体的方法，包括：确定是否没有空闲缓冲区块缓冲当前在播放缓冲器中的流媒体; 如果是，请停止从网络下载流媒体; 否则，缓冲在播放缓冲器中从网络下载的流媒体; 确定在播放缓冲器中缓冲后播放流媒体的时间是否比根据播放速度播放蒸汽媒体的时间晚; 如果是这样，停止在缓冲区块中播放流媒体; 否则，在缓冲区块中播放流媒体。 根据本发明，通过分别控制下载和播放流媒体的处理来避免覆盖播放缓冲器中播放的流媒体和播放流媒体间的不兼容的流媒体问题， 。 鉴于上述情况，可以保证在缓冲和播放流媒体的过程中不会发生错误，并确保播放流媒体的质量。 本发明的实施例还公开了一种用于缓冲流媒体的装置。

公开(公告)号：US20070020884A1

公开(公告)日：2007-01-25

申请号：US11189163

申请日：2005-07-25

申请人： Qi Wang ,  Minhua Li ,  Jeffrey Rice

发明人： Qi Wang ,  Minhua Li ,  Jeffrey Rice

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76251 ,  H01L21/2007 ,  H01L21/6835 ,  H01L2221/68368

摘要： Processes used to transfer semiconductor structures from an initial substrate to a base substrate include bonding the initial substrate with a silicon dioxide layer to a doped silicon structure weakened sufficiently by hydrogen implantation for cleaving. After cleaving, a doped silicon layer remains, burying the silicon dioxide layer between the doped silicon layer and the initial substrate. Semiconductor structures are formed within/on an epitaxial layer disposed on the doped silicon layer forming an intermediate semiconductor structure. A process handle is temporarily bonded to the semiconductor structures for support. The initial substrate is thinned and removed by a mechanical thinning process followed by chemical etching using the buried silicon dioxide layer as an etch stop. The silicon dioxide layer is chemically removed from the doped silicon layer. A base substrate is formed on the doped silicon layer. The process handle is removed leaving the semiconductor structures disposed on the base substrate.

摘要翻译： 用于将半导体结构从初始衬底转移到基底衬底的工艺包括将初始衬底与二氧化硅层结合到通过氢注入充分削弱的用于裂解的掺杂硅结构。 在分裂之后，保留掺杂的硅层，将二氧化硅层埋在掺杂硅层和初始衬底之间。 半导体结构形成在设置在掺杂硅层上的外延层内/之上，形成中间半导体结构。 工艺手柄临时粘合到用于支撑的半导体结构。 通过机械稀化处理使初始底物变薄并除去，然后使用掩埋二氧化硅层作为蚀刻停止层进行化学蚀刻。 从掺杂硅层化学去除二氧化硅层。 基底衬底形成在掺杂硅层上。 去除处理手柄，留下设置在基底基板上的半导体结构。

公开(公告)号：US20060289916A1

公开(公告)日：2006-12-28

申请号：US11469456

申请日：2006-08-31

申请人： Chanho Park ,  Qi Wang

发明人： Chanho Park ,  Qi Wang

IPC分类号： H01L27/108 ,  H01L31/00

CPC分类号： H01L29/7813 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/49 ,  H01L29/4933 ,  H01L29/66734 ,  H01L29/7782 ,  Y02P70/605

摘要： Devices, methods, and processes that improve immunity to transient voltages and reduce parasitic impedances. Immunity to unclamped inductive switching events is improved. For example, a trench-gated power MOSFET device having a SiGe source is provided, where the SiGe source reduces parasitic npn transistor gain by reducing hole current in the body or well region, thereby decreasing the likelihood of a latch-up condition. A trench-gated power MOSFET device having a SiGe body or well region is also provided. A SiGe body reduces hole current when the body diode is turned on, thereby reducing reverse recovery power losses. Other device characteristics are also improved. For example, parasitic gate impedance can reduced through the use of a poly SiGe gate. Also, channel resistance can be reduced through the use of a SiGe layer near the device's gate and a thick oxide region can be formed under the trench gate to reduce gate-to-drain capacitance.

摘要翻译： 提高对瞬态电压的抗扰度并减少寄生阻抗的器件，方法和过程。 提高对松开感应开关事件的抗扰度。 例如，提供了具有SiGe源的沟槽门控功率MOSFET器件，其中SiGe源通过减少主体或阱区中的空穴电流来降低寄生npn晶体管增益，从而降低闩锁状态的可能性。 还提供了具有SiGe体或阱区的沟槽栅功率MOSFET器件。 当体二极管导通时，SiGe体减小空穴电流，从而降低反向恢复功率损耗。 其他装置特性也得到改善。 例如，通过使用多晶SiGe栅极可以减小寄生栅极阻抗。 此外，可以通过在器件栅极附近使用SiGe层来减小沟道电阻，并且可以在沟槽栅极下形成厚的氧化物区域以减小栅极 - 漏极电容。