CAPACITIVE ELECTROMECHANICAL TRANSDUCER
    41.
    发明申请
    CAPACITIVE ELECTROMECHANICAL TRANSDUCER 审中-公开
    电容式电磁传感器

    公开(公告)号:US20130313663A1

    公开(公告)日:2013-11-28

    申请号:US13983287

    申请日:2012-01-16

    IPC分类号: H01L29/84

    CPC分类号: H01L29/84 B06B1/0292

    摘要: Provided is a capacitive electromechanical transducer manufactured by fusion bonding, which is capable of enhancing the performance by reducing fluctuations in initial deformation among diaphragms caused at positions having difference boundary conditions such as the bonding area. The capacitive electromechanical transducer includes a device, the device including at least one cellular structure including: a silicon substrate; a diaphragm; and a diaphragm supporting portion configured to support the diaphragm so that a gap is formed between one surface of the silicon substrate and the diaphragm. The device has, in its periphery, a groove formed in a layer shared with the diaphragm supporting portion.

    摘要翻译: 提供一种通过熔接制造的电容式机电换能器,其能够通过减少在诸如接合面积的不同边界条件的位置处引起的膜片之间的初始变形的波动来提高性能。 电容式机电换能器包括一个装置,该装置包括至少一个蜂窝结构,包括:硅衬底; 隔膜 以及隔膜支撑部,其构造成支撑所述隔膜,使得在所述硅基板的一个表面和所述隔膜之间形成间隙。 该装置在其周边具有形成在与隔膜支撑部分共享的层中的凹槽。

    Method of manufacturing an electromechanical transducer
    42.
    发明授权
    Method of manufacturing an electromechanical transducer 有权
    制造机电换能器的方法

    公开(公告)号:US08518733B2

    公开(公告)日:2013-08-27

    申请号:US13610219

    申请日:2012-09-11

    IPC分类号: H01L21/02

    摘要: Provided is a method of manufacturing an electromechanical transducer having a reduced variation in a breakdown strength caused by a variation in flatness of an insulating layer. In the method of manufacturing the electromechanical transducer, a first insulating layer is formed on a first substrate, a barrier wall is formed by removing a part of the first insulating layer, and a second insulating layer is formed on a region of the first substrate after the part of the first insulating layer has been removed. Next, a gap is formed by bonding a second substrate on the barrier wall, and a vibration film that is opposed to the second insulating layer via the gap is formed from the second substrate. In the forming of the barrier wall, a height on a gap side in a direction vertical to the first substrate becomes lower than a height of a center portion.

    摘要翻译: 提供一种制造机电换能器的方法,其具有由绝缘层的平坦度的变化引起的击穿强度的变化减小。 在制造机电换能器的方法中,在第一基板上形成第一绝缘层,通过去除第一绝缘层的一部分形成阻挡壁,在第一基板的区域上形成第二绝缘层, 第一绝缘层的部分已被去除。 接下来,通过在阻挡壁上接合第二基板形成间隙,并且通过间隙形成与第二绝缘层相对的振动膜。 在形成阻挡壁时,与第一基板垂直的方向上的间隙侧的高度比中心部的高度低。

    METHOD OF MANUFACTURING CAPACITIVE ELECTROMECHANICAL TRANSDUCER
    43.
    发明申请
    METHOD OF MANUFACTURING CAPACITIVE ELECTROMECHANICAL TRANSDUCER 审中-公开
    制造电容式电磁传感器的方法

    公开(公告)号:US20130302934A1

    公开(公告)日:2013-11-14

    申请号:US13981504

    申请日:2012-01-24

    IPC分类号: H01L41/33

    摘要: Provided is a method of manufacturing a capacitive electromechanical transducer using fusion bonding, which is capable of reducing fluctuations in initial deformation among diaphragms caused at positions having different boundary conditions such as the bonding area, thereby enhancing the uniformity of the transducer and stabilizing the sensitivity and the like. The method of manufacturing a capacitive electromechanical transducer includes: forming an insulating layer on a first silicon substrate and forming at least one recess; fusion bonding a second silicon substrate onto the insulating layer; and thinning the second silicon substrate and forming a silicon film. The method further includes, before the bonding of the second silicon substrate onto the insulating layer, forming a groove in the insulating layer at the periphery of the at least one recess.

    摘要翻译: 提供一种使用熔接的制造电容式机电换能器的方法,其能够减少在具有不同边界条件(例如接合面积)的位置处引起的膜片之间的初始变形的波动,从而增强换能器的均匀性并稳定灵敏度, 类似。 制造电容式机电换能器的方法包括:在第一硅衬底上形成绝缘层并形成至少一个凹槽; 将第二硅衬底熔合到所述绝缘层上; 并使第二硅衬底变薄并形成硅膜。 该方法还包括在将第二硅衬底接合到绝缘层之前,在至少一个凹部的周边处在绝缘层中形成凹槽。

    ELECTROMECHANICAL TRANSDUCER AND METHOD OF MANUFACTURING THE SAME
    44.
    发明申请
    ELECTROMECHANICAL TRANSDUCER AND METHOD OF MANUFACTURING THE SAME 有权
    机电传感器及其制造方法

    公开(公告)号:US20120266682A1

    公开(公告)日:2012-10-25

    申请号:US13425346

    申请日:2012-03-20

    CPC分类号: B06B1/0292

    摘要: Disclosed is an electromechanical transducer, including: a cell including a substrate, a vibration film, and a supporting portion of the vibration film configured to support the vibration film so that a gap is formed between the substrate and the vibration film; and a lead wire that is placed on the substrate with an insulator interposed therebetween and extends to the cell, wherein the insulator has a thickness greater than the thickness of the supporting portion. The electromechanical transducer can reduce parasitic capacitance to prevent an increase in noise, a reduction in bandwidth, and a reduction in sensitivity.

    摘要翻译: 公开了一种机电换能器,包括:包括基板,振动膜和振动膜的支撑部分的电池,其构造成支撑振动膜,使得在基板和振动膜之间形成间隙; 以及引线,其被放置在基板上,绝缘体插入其间并延伸到电池,其中绝缘体的厚度大于支撑部分的厚度。 机电换能器可以减小寄生电容,以防止噪声的增加,带宽的减少和灵敏度的降低。

    METHOD OF MANUFACTURING A STRUCTURE BASED ON ANISOTROPIC ETCHING, AND SILICON SUBSTRATE WITH ETCHING MASK
    45.
    发明申请
    METHOD OF MANUFACTURING A STRUCTURE BASED ON ANISOTROPIC ETCHING, AND SILICON SUBSTRATE WITH ETCHING MASK 审中-公开
    基于异相蚀刻的结构的制造方法和具有蚀刻掩模的硅基板

    公开(公告)号:US20090161189A1

    公开(公告)日:2009-06-25

    申请号:US12333910

    申请日:2008-12-12

    IPC分类号: G02B26/08 G03F7/20 G03F1/00

    CPC分类号: B81C1/00404

    摘要: A method of manufacturing a structure that includes a mask forming step for forming, on a monocrystal silicon substrate, a base etching mask corresponding to a target shape and a correction etching mask having a joint connecting to the base etching mask, and a target shape forming step for forming the target shape by anisotropically etching the silicon substrate, wherein, in the mask forming step, a lowered-strength portion where a mechanical strength is locally decreased is formed at least in a portion of the joint of the correction etching mask.

    摘要翻译: 一种制造结构的方法,该结构包括掩模形成步骤,用于在单晶硅衬底上形成对应于目标形状的基底蚀刻掩模和具有连接到基底蚀刻掩模的接合部的校正蚀刻掩模,以及目标形状形成 通过各向异性蚀刻硅衬底来形成目标形状的步骤,其中在掩模形成步骤中,至少在校正蚀刻掩模的接合部分中形成机械强度局部减小的低强度部分。

    OSCILLATING SYSTEM AND OPTICAL DEFLECTOR
    46.
    发明申请
    OSCILLATING SYSTEM AND OPTICAL DEFLECTOR 有权
    振荡系统和光学偏移器

    公开(公告)号:US20070144867A1

    公开(公告)日:2007-06-28

    申请号:US11608343

    申请日:2006-12-08

    IPC分类号: G02B26/10 G03G15/04 B65G37/00

    摘要: Disclosed is an oscillating system arranged so that a gravity center of a movable member and a torsional axis of a resilient support are easily registered with each other to prevent deformation of the movable member due to its dead weight or deviation of deformation from symmetrical deformation, wherein the oscillating system includes a substrate 301, a movable member 302 with hard magnetic members 310 and 311, resilient supports 304 and 305 for supporting the movable member for torsional vibration about a torsional axis 312 with respect to the substrate, and a magnetic field producing device for driving the movable member relative to the substrate, wherein the movable member 302 has recesses 306 and 307, and wherein the hard magnetic members are fixed while their end portions are aligned with end faces 308 and 309 corresponding to the recesses.

    摘要翻译: 公开了一种摆动系统,其布置成使得活动构件的重心和弹性支撑件的扭转轴彼此容易地对准,以防止可变构件由于其自重或对称变形的偏差而变形,其中 振荡系统包括基板301,具有硬磁性构件310和311的可移动构件302,用于支撑可动构件以相对于基板绕扭转轴312扭转振动的弹性支撑件304和305以及磁场产生装置 用于相对于基板驱动可移动部件,其中可移动部件302具有凹部306和307,并且其中硬磁部件的端部与对应于凹部的端面308和309对准而固定。

    METHOD OF MANUFACTURING AN ELECTROMECHANICAL TRANSDUCER
    47.
    发明申请
    METHOD OF MANUFACTURING AN ELECTROMECHANICAL TRANSDUCER 有权
    制造机电传感器的方法

    公开(公告)号:US20130071964A1

    公开(公告)日:2013-03-21

    申请号:US13610219

    申请日:2012-09-11

    IPC分类号: H01L21/02

    摘要: Provided is a method of manufacturing an electromechanical transducer having a reduced variation in a breakdown strength caused by a variation in flatness of an insulating layer. In the method of manufacturing the electromechanical transducer, a first insulating layer is formed on a first substrate, a barrier wall is formed by removing a part of the first insulating layer, and a second insulating layer is formed on a region of the first substrate after the part of the first insulating layer has been removed. Next, a gap is formed by bonding a second substrate on the barrier wall, and a vibration film that is opposed to the second insulating layer via the gap is formed from the second substrate. In the forming of the barrier wall, a height on a gap side in a direction vertical to the first substrate becomes lower than a height of a center portion.

    摘要翻译: 提供一种制造机电换能器的方法,其具有由绝缘层的平坦度的变化引起的击穿强度的变化减小。 在制造机电换能器的方法中,在第一基板上形成第一绝缘层,通过去除第一绝缘层的一部分形成阻挡壁,在第一基板的区域上形成第二绝缘层, 第一绝缘层的部分已被去除。 接下来,通过在阻挡壁上接合第二基板形成间隙,并且通过间隙形成与第二绝缘层相对的振动膜。 在形成阻挡壁时,与第一基板垂直的方向上的间隙侧的高度比中心部的高度低。