公开(公告)号：US20140103359A1

公开(公告)日：2014-04-17

申请号：US14125878

申请日：2011-07-28

申请人： Hyun Wook Shim ,  Sang Heon Han ,  Jae Woong Han ,  Dong Chul Shin ,  Je Won Kim ,  Dong Ju Lee

发明人： Hyun Wook Shim ,  Sang Heon Han ,  Jae Woong Han ,  Dong Chul Shin ,  Je Won Kim ,  Dong Ju Lee

IPC分类号： H01L33/32 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L33/0075 ,  H01L33/025 ,  H01L33/20 ,  H01L33/24

摘要： A semiconductor light emitting device having enhanced luminous efficiency and a manufacturing method thereof are provided. The semiconductor light emitting device includes: an n-type semiconductor layer having at least one pit formed in an upper surface thereof; an active layer formed on the n-type semiconductor layer, a region of the active layer corresponding to the pit having an upper surface bent along the pit; and a p-type semiconductor layer formed on the active layer, a region of the p-type semiconductor layer corresponding to the pit having an upper surface bent along the bent portion of the active layer.

摘要翻译： 提供了一种具有增强的发光效率的半导体发光器件及其制造方法。 半导体发光器件包括：在其上表面中形成有至少一个凹坑的n型半导体层; 形成在所述n型半导体层上的有源层，与所述凹坑对应的所述有源层的沿着所述凹坑弯曲的上表面的区域; 以及形成在有源层上的p型半导体层，p型半导体层对应于具有沿着有源层的弯曲部分弯曲的上表面的凹坑的区域。

公开(公告)号：US08405103B2

公开(公告)日：2013-03-26

申请号：US12182383

申请日：2008-07-30

申请人： Dong Yul Lee ,  Seong Ju Park ,  Min Ki Kwon ,  Ja Yeon Kim ,  Yong Chun Kim ,  Bang Won Oh ,  Seok Min Hwang ,  Je Won Kim

发明人： Dong Yul Lee ,  Seong Ju Park ,  Min Ki Kwon ,  Ja Yeon Kim ,  Yong Chun Kim ,  Bang Won Oh ,  Seok Min Hwang ,  Je Won Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L2933/0083

摘要： There is provided a photonic crystal light emitting device including: a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween; a transparent electrode layer formed on the second conductivity type semiconductor layer, the transparent electrode layer having a plurality of holes arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the transparent electrode layer includes a photonic crystal structure; and first and second electrode electrically connected to the first conductivity type semiconductor layer and the transparent electrode layer, respectively. The photonic crystal light emitting device has a transparent electrode layer formed of a photonic crystal structure defined by minute holes, thereby improved in light extraction efficiency.

摘要翻译： 提供了一种光子晶体发光器件，包括：发光结构，包括第一和第二导电类型半导体层和插入其间的有源层; 形成在所述第二导电型半导体层上的透明电极层，所述透明电极层具有以预定尺寸和周期排列的多个孔，以形成从所述有源层发射的光的光子带隙，由此所述透明电极层 包括光子晶体结构; 以及分别与第一导电类型半导体层和透明电极层电连接的第一和第二电极。 光子晶体发光器件具有由微孔限定的光子晶体结构形成的透明电极层，从而提高光提取效率。

公开(公告)号：US08110847B2

公开(公告)日：2012-02-07

申请号：US12003276

申请日：2007-12-21

申请人： Kun Yoo Ko ,  Je Won Kim ,  Dong Woo Kim ,  Hyung Jin Park ,  Seok Min Hwang ,  Seung Wan Chae

发明人： Kun Yoo Ko ,  Je Won Kim ,  Dong Woo Kim ,  Hyung Jin Park ,  Seok Min Hwang ,  Seung Wan Chae

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/42

摘要： Provided is a nitride-based semiconductor LED including a substrate; a first conductive-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the first conductive-type nitride semiconductor layer; a second conductive-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the second conductive-type nitride semiconductor layer; a second conductive-type electrode pad formed on the transparent electrode; a plurality of second conductive-type electrodes extending from the second conductive-type electrode pad in one direction so as to be formed in a line; a first conductive-type electrode pad formed on the first conductive-type nitride semiconductor layer, where the active layer is not formed, so as to be positioned on the same side as the second conductive-type electrode pad; and a plurality of first conductive-type electrodes extending from the first conductive-type electrode pad in one direction so as to be formed in a line.

摘要翻译： 提供一种包含基板的氮化物系半导体LED， 形成在所述基板上的第一导电型氮化物半导体层; 形成在所述第一导电型氮化物半导体层的预定区域上的有源层; 形成在所述有源层上的第二导电型氮化物半导体层; 形成在所述第二导电型氮化物半导体层上的透明电极; 形成在所述透明电极上的第二导电型电极焊盘; 多个第二导电型电极，从第二导电型电极焊盘沿一个方向延伸以形成一条线; 第一导电型电极焊盘，形成在第一导电型氮化物半导体层上，其中没有形成有源层，以便位于与第二导电型电极焊盘相同的一侧; 以及从第一导电型电极焊盘沿一个方向延伸以形成一行的多个第一导电型电极。

公开(公告)号：US07705364B2

公开(公告)日：2010-04-27

申请号：US11584504

申请日：2006-10-23

申请人： Dong Yul Lee ,  Sang Won Kang ,  Keun Man Song ,  Je Won Kim ,  Sang Su Hong

发明人： Dong Yul Lee ,  Sang Won Kang ,  Keun Man Song ,  Je Won Kim ,  Sang Su Hong

IPC分类号： H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32

摘要： A nitride semiconductor light emitting device has high internal quantum efficiency but low operating voltage. The nitride semiconductor light emitting device includes an n-nitride semiconductor layer; an active layer of multi-quantum well structure formed on the n-nitride semiconductor layer, and having a plurality of quantum well layers and a plurality of quantum barrier layers; and a p-nitride semiconductor layer formed on the active layer. One of the quantum well layers adjacent to the n-nitride semiconductor layer has an energy band gap greater than that of another one of the quantum well layers adjacent to the p-nitride semiconductor layer.

摘要翻译： 氮化物半导体发光器件具有高的内部量子效率，但是工作电压低。 氮化物半导体发光器件包括氮化物半导体层; 形成在氮化物半导体层上的具有多个量子阱层和多个量子势垒层的多量子阱结构的有源层; 以及形成在有源层上的p型氮化物半导体层。 与氮化物半导体层相邻的量子阱层中的一个具有大于与p氮化物半导体层相邻的另一个量子阱层的能带隙。

公开(公告)号：US07531841B2

公开(公告)日：2009-05-12

申请号：US11651023

申请日：2007-01-09

申请人： Kun Yoo Ko ,  Bang Won Oh ,  Hun Joo Hahm ,  Je Won Kim ,  Hyung Jin Park ,  Seok Min Hwang ,  Dong Woo Kim

发明人： Kun Yoo Ko ,  Bang Won Oh ,  Hun Joo Hahm ,  Je Won Kim ,  Hyung Jin Park ,  Seok Min Hwang ,  Dong Woo Kim

IPC分类号： H01L27/15

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/32

摘要： A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-type electrode pad formed on the transparent electrode; a pair of p-type connection electrodes formed in a line extending from the p-type electrode pad so as to have an inclination angle of less than 90 degrees with respect to one side of the transparent electrode adjacent to the p-type electrode pad; a pair of p-electrodes extending from both ends of the p-type connection electrodes in the direction of the n-type electrode pad, the p-electrode being formed in parallel to one side of the adjacent transparent electrode; and an n-type electrode pad formed on the n-type nitride semiconductor layer, on which the active layer is not formed, such that the n-type electrode pad faces the p-type electrode pad.

摘要翻译： 氮化物系半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在透明电极上的p型电极焊盘; 一对p型连接电极，形成在从p型电极焊盘延伸的线中，以相对于与p型电极焊盘相邻的透明电极的一侧具有小于90度的倾斜角; 一对p电极，其从p型连接电极的两端沿着n型电极焊盘的方向延伸，p电极与相邻的透明电极的一侧平行地形成; 以及n型电极焊盘，形成在n型氮化物半导体层上，其上没有形成有源层，使得n型电极焊盘面向p型电极焊盘。

公开(公告)号：US07115914B2

公开(公告)日：2006-10-03

申请号：US10944745

申请日：2004-09-21

申请人： Jae Hoon Lee ,  Yong Chun Kim ,  Je Won Kim

发明人： Jae Hoon Lee ,  Yong Chun Kim ,  Je Won Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/06

摘要： A nitride semiconductor light-emitting device includes a first conductive nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer, and having at least one quantum well layer and at least one quantum barrier layer alternatively laminated; and a second conductive nitride semiconductor layer formed on the active layer, wherein at least one of the quantum well layer and quantum barrier layer in the active layer is doped with elemental Al in a concentration of less than 1%.

摘要翻译： 氮化物半导体发光器件包括第一导电氮化物半导体层; 形成在所述第一导电氮化物半导体层上并且具有至少一个量子阱层和至少一个量子势垒层交替叠层的有源层; 以及形成在有源层上的第二导电氮化物半导体层，其中有源层中的量子阱层和量子势垒层中的至少一个掺杂有浓度小于1％的元素Al。