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    Transimpedance amplifier-based reduction of hall sensor parasitic impedance
    41.
    发明授权
    Transimpedance amplifier-based reduction of hall sensor parasitic impedance 有权

    公开(公告)号：US10041811B2

    公开(公告)日：2018-08-07

    申请号：US15186394

    申请日：2016-06-17

    Applicant: Texas Instruments Incorporated

    Inventor： Arup Polley ,  Srinath Ramaswamy ,  Baher S. Haroun ,  Rajarshi Mukhopadhyay

    IPC: G01D5/14

    Abstract: A high bandwidth Hall sensor includes, for example, a Hall element for generating a first polarity Hall-signal output current. An amplifier receives, at a first input, the first polarity Hall-signal output current and outputs a feedback current of a second polarity opposite the first polarity in response. The feedback current is coupled to the first input, and the feedback current suppresses an instantaneous voltage generated by the first polarity first Hall element output current at the first input. In an embodiment, the feedback current suppresses the instantaneous voltage generated by first polarity Hall element output current such that the effects of the Hall element source impedance are reduced.

    WAFER SUBSTRATE REMOVAL
    44.
    发明申请
    WAFER SUBSTRATE REMOVAL 有权
    清除基板去除

    公开(公告)号：US20160218175A1

    公开(公告)日：2016-07-28

    申请号：US14701484

    申请日：2015-04-30

    Applicant: Texas Instruments Incorporated

    Inventor： Dan Carothers ,  Rajarshi Mukhopadhyay ,  Paul Brohlin ,  Benjamin Cook

    IPC: H01L29/06 ,  H01L23/528 ,  H01L21/683 ,  H01L21/8234 ,  H01L21/02 ,  H01L21/78 ,  H01L23/522 ,  H01L21/762

    CPC classification number: H01L21/6835 ,  H01L21/02282 ,  H01L21/02288 ,  H01L21/31053 ,  H01L21/76224 ,  H01L21/78 ,  H01L21/823481 ,  H01L23/5223 ,  H01L23/528 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/13 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A semiconductor device is formed on a semiconductor substrate, including a primary portion of the substrate. An active component of the semiconductor device is disposed in the primary portion of the substrate. An interconnect region is formed on a top surface of the substrate. Semiconductor material is removed from the substrate in an isolation region, which is separate from the primary portion of the substrate; the isolation region extends from the top surface of the substrate to a bottom surface of the substrate. A dielectric replacement material is formed in the isolation region. The semiconductor device further includes an isolated component which is not disposed in the primary portion of the substrate. The dielectric replacement material in the isolation region separates the isolated component from the primary portion of the substrate.

    Abstract translation: 半导体器件形成在包括衬底的主要部分的半导体衬底上。 半导体器件的有源部件设置在基板的主要部分中。 在衬底的顶表面上形成互连区。 在与衬底的主要部分分离的隔离区域中从衬底去除半导体材料; 隔离区域从衬底的顶表面延伸到衬底的底表面。 电介质替代材料形成在隔离区域中。 半导体器件还包括未设置在基板的主要部分中的隔离部件。 隔离区域中的电介质替代材料将隔离的部件与基板的主要部分分离。

    System for transmitting information between circuits
    45.
    发明授权
    System for transmitting information between circuits 有权
    电路之间传输信息的系统

    公开(公告)号：US09379774B2

    公开(公告)日：2016-06-28

    申请号：US14479966

    申请日：2014-09-08

    Applicant: Texas Instruments Incorporated

    Inventor： Mark W. Morgan ,  Rajarshi Mukhopadhyay

    IPC: H03B1/00 ,  H03K3/00 ,  H04B3/54

    CPC classification number: H04L25/0272 ,  H04B3/54 ,  H04B3/56 ,  H04B2203/5425 ,  H04B2203/5491

    Abstract: A system for transferring information from a first circuit to a second circuit includes first and second isolation elements coupled between the first circuit and the second circuit. A first transient filter is located on the second circuit and coupled to the first isolation element. A second transient filter is located on the second circuit and coupled to the second isolation element. A first ground is located on the first circuit, and a second ground is located on the second circuit. The first ground electrically floats relative to the second ground.

    Abstract translation: 用于将信息从第一电路传送到第二电路的系统包括耦合在第一电路和第二电路之间的第一和第二隔离元件。 第一瞬态滤波器位于第二电路上并耦合到第一隔离元件。 第二瞬态滤波器位于第二电路上并耦合到第二隔离元件。 第一接地位于第一电路上，第二接地位于第二电路上。 第一个地面相对于第二个地面电浮动。

    Circuits and methods for compensating for miller capacitance
    46.
    发明授权
    Circuits and methods for compensating for miller capacitance 有权
    用于补偿磨机电容的电路和方法

    公开(公告)号：US09166543B2

    公开(公告)日：2015-10-20

    申请号：US13864111

    申请日：2013-04-16

    Applicant: Texas Instruments Incorporated

    Inventor： Matthew David Rowley ,  Rajarshi Mukhopadhyay

    IPC: H03F1/14 ,  H03F3/45

    CPC classification number: H03F3/45188 ,  H03F1/14

    Abstract: Amplifier circuits and methods of cancelling the Miller effects in amplifiers are disclosed herein. An embodiment of an amplifier circuit includes an input and an output. An amplifier is connected between the input and the output of the circuit. A voltage source is connected to the output, wherein the voltage source output is one hundred eighty degrees out of phase with the voltage output by the amplifier, and wherein the voltage source cancels gain due to the Miller effect of a Miller capacitance between the input and output.

    Abstract translation: 本文公开了放大器电路和消除放大器中的米勒效应的方法。 放大器电路的实施例包括输入和输出。 放大器连接在电路的输入和输出端之间。 电压源连接到输出端，其中电压源输出与放大器输出的电压相差一百八十度，并且其中电压源由于米勒对输入和输出之间的米勒电容的影响而抵消了增益。 输出。

    Proximity sensing system
    47.
    发明授权
    Proximity sensing system 有权
    接近感测系统

    公开(公告)号：US08508876B2

    公开(公告)日：2013-08-13

    申请号：US13712363

    申请日：2012-12-12

    Applicant: Texas Instruments Incorporated

    Inventor： Arup Polley ,  Rajarshi Mukhopadhyay ,  Reza Sharifi ,  Mark A. Wolfe

    IPC: G11B20/10

    CPC classification number: G11B21/21 ,  G11B5/6029 ,  G11B5/6076

    Abstract: A data storage system for detecting a location of a head relative to a magnetic media is described. This system comprises arms, a preamplifier circuit coupled to the arms for controlling the arms, a proximity sensing system positioned within the preamplifier circuit, the proximity sensing system comprising: an input stage for transmitting an input sense signal; a programmable gain stage coupled to receive the input sense signal and operative for transmitting a gain signal in response to receiving the input sense signal; a multiplexer coupled to receive the gain signal and at least one control signal, the multiplexer operative for transmitting a multiplexed signal; a detector coupled to receive the multiplexed signal and a second control signal, the detector operative for transmitting an output signal; wherein an amplitude associated with the output signal enables detecting the location of the head.

    Abstract translation: 描述了一种用于检测头相对于磁性介质的位置的数据存储系统。 该系统包括臂，耦合到用于控制臂的臂的前置放大器电路，位于前置放大器电路内的接近感测系统，所述接近感测系统包括：用于传输输入感测信号的输入级; 可编程增益级，其被耦合以接收所述输入检测信号并且用于响应于接收所述输入检测信号而发送增益信号; 多路复用器，其耦合以接收增益信号和至少一个控制信号，多路复用器用于发送多路复用信号; 耦合以接收所述多路复用信号的检测器和第二控制信号，所述检测器用于发送输出信号; 其中与输出信号相关联的振幅使得能够检测头部的位置。

    Isolation of circuit elements using front side deep trench etch
    49.
    发明授权
    Isolation of circuit elements using front side deep trench etch 有权

    公开(公告)号：US11417725B2

    公开(公告)日：2022-08-16

    申请号：US17104478

    申请日：2020-11-25

    Applicant: Texas Instruments Incorporated

    Inventor： Dan Carothers ,  Ricky Jackson ,  Rajarshi Mukhopadhyay ,  Ben Cook

    IPC: H01L29/06 ,  H01L23/522 ,  H01L21/762 ,  H01L49/02 ,  H01L29/417 ,  H01L21/8234

    Abstract: An integrated circuit is formed by forming an isolation trench through at least a portion of an interconnect region, at least 40 microns deep into a substrate of the integrated circuit, leaving at least 200 microns of substrate material under the isolation trench. Dielectric material is formed in the isolation trench at a substrate temperature no greater than 320° C. to form an isolation structure which separates an isolated region of the integrated circuit from at least a portion of the substrate. The isolated region contains an isolated component. The isolated region of the integrated circuit may be a region of the substrate, and/or a region of the interconnect region. The isolated region may be a first portion of the substrate which is laterally separated from a second portion of the substrate. The isolated region may be a portion of the interconnect region above the isolation structure.

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