公开(公告)号：US11784113B2

公开(公告)日：2023-10-10

申请号：US17233110

申请日：2021-04-16

Applicant: Texas Instruments Incorporated

Inventor： Guangxu Li ,  Yiqi Tang ,  Rajen Manicon Murugan

IPC: H01L23/498 ,  H01L23/00 ,  H01L21/48

CPC classification number: H01L23/49811 ,  H01L21/4857 ,  H01L23/49822 ,  H01L23/49838 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/1357 ,  H01L2224/13147 ,  H01L2224/16227

Abstract: A semiconductor package includes a multilayer package substrate including a top layer including a top dielectric layer and a top metal layer providing a top portion of pins on top filled vias, and a bottom layer including a bottom dielectric layer and a bottom metal layer on bottom filled vias that provide externally accessible bottom side contact pads. The top dielectric layer together with the bottom dielectric layer providing electrical isolation between the pins. And integrated circuit (IC) die that comprises a substrate having a semiconductor surface including circuitry, with nodes connected to bond pads with bonding features on the bond pads. An electrically conductive material interconnect provides a connection between the top side contact pads and the bonding features. At least a first pin includes at least one bump stress reduction structure that includes a local physical dimension change of at least 10% in at least one dimension.

公开(公告)号：US20230055211A1

公开(公告)日：2023-02-23

申请号：US17406150

申请日：2021-08-19

Applicant: Texas Instruments Incorporated

Inventor： Sylvester Ankamah-Kusi ,  Yiqi Tang ,  Rajen Manicon Murugan ,  Sreenivasan K. Koduri

IPC: H01L23/498 ,  H01L21/48

Abstract: An electronic device includes a multilevel package substrate with first and second levels extending in planes of first and second directions and spaced apart from one another along a third direction, the first level having a first side with landing areas spaced apart from one another along the first direction. The multilevel package substrate includes a conductive structure having first and second ends and conductive portions in the first and second levels that provide a conductive path along the first direction from the landing areas toward the second end, where the conductive structure includes indents that extend into the conductive portions in the first level, the indents spaced apart from one another along the first direction and positioned along the first direction between respective pairs of the landing areas.

公开(公告)号：US20210328367A1

公开(公告)日：2021-10-21

申请号：US17232849

申请日：2021-04-16

Applicant: Texas Instruments Incorporated

Inventor： Yiqi Tang ,  Rajen Manicon Murugan

IPC: H01Q23/00 ,  H01L23/66 ,  H01Q1/22

Abstract: An AIP includes a package substrate including a top layer including a top metal layer including a first antenna type and a second antenna type, and a bottom layer including a bottom dielectric and a metal layer including a first and second contact pad and filled vias, and an IC embedded therein. Bond pads of an IC are coupled by a connection including ≥1 filled via for connecting to the top and/or bottom metal layer. A first metal pillar is between the first contact pad and first antenna, and a second metal pillar is between the second contact pad and second antenna. A first filled via is coupled to the first metal pillar providing a transmission line from the first contact pad to the first antenna. A second filled via is coupled to the first metal pillar providing a transmission line from the second contact pad to the second antenna.

公开(公告)号：US20210175326A1

公开(公告)日：2021-06-10

申请号：US17017642

申请日：2020-09-10

Applicant: Texas Instruments Incorporated

Inventor： Matthew David Romig ,  Enis Tuncer ,  Rajen Manicon Murugan ,  Yiqi Tang

IPC: H01L29/06 ,  H01L23/498 ,  H01L23/31 ,  H01L21/56 ,  H01L21/48

Abstract: In described examples of an isolation device, an isolation die that has a set of bond pads is mounted on a first lead frame that has a set of leads. A portion of the bond pads are coupled to respective leads. A first mold material encapsulates the isolation device and the first lead frame forming a first package. The first package is mounted on a second lead frame that has a set of leads. A portion of the first lead frame leads is coupled to respective ones of the second lead frame leads. A second mold material encapsulates the first package and the second lead frame.

公开(公告)号：US10892405B2

公开(公告)日：2021-01-12

申请号：US16404978

申请日：2019-05-07

Applicant: Texas Instruments Incorporated

Inventor： Ming Li ,  Yiqi Tang ,  Jie Chen ,  Enis Tuncer ,  Usman Mahmood Chaudhry ,  Tony Ray Larson ,  Rajen Manicon Murugan ,  John Paul Tellkamp ,  Satyendra Singh Chauhan

IPC: H01L43/04 ,  H01L43/06 ,  H01L43/14 ,  G01R15/20 ,  H01L23/495 ,  G01R33/07 ,  G01R33/00

Abstract: A Hall-effect sensor package includes and an IC die including a Hall-Effect element and a leadframe including leads on a first side providing a first field generating current (FGC) path including ≥1 first FGC input pin coupled by a reduced width first curved head over or under the Hall-effect sensor element to ≥1 first FGC output pin, and second leads on a second side of the package. Some leads on the second side are attached to bond pads on the IC die including the output of the Hall-effect element. A clip is attached at one end to the first FGC input pin and at another end to a location on the first FGC output pin, having a reduced width second curved head in between that is over or under the Hall-effect sensor element opposite the first head.

公开(公告)号：US10262957B2

公开(公告)日：2019-04-16

申请号：US15949746

申请日：2018-04-10

Applicant: Texas Instruments Incorporated

Inventor： Rajen Manicon Murugan ,  Minhong Mi ,  Gary Paul Morrison ,  Jie Chen ,  Kenneth Robert Rhyner ,  Stanley Craig Beddingfield ,  Chittranjan Mohan Gupta ,  Django Earl Trombley

IPC: H01Q1/00 ,  H01L23/66 ,  H01L23/498 ,  H01L23/00 ,  H01Q1/22 ,  H01Q23/00 ,  H05K1/02 ,  H01Q1/32 ,  H05K1/18

Abstract: An integrated circuit (IC) package includes an IC die and a wave channel that electrically couples the IC die to a solder ball array. The wave channel is configured to resonate at an operating frequency band of the IC die.

公开(公告)号：US12218036B2

公开(公告)日：2025-02-04

申请号：US18177273

申请日：2023-03-02

Applicant: Texas Instruments Incorporated

Inventor： Rajen Manicon Murugan ,  Yiqi Tang

IPC: H01L23/495 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31

Abstract: A semiconductor package includes a multilayer package substrate with a top layer including top filled vias through a top dielectric layer and top metal layer providing a top surface for leads and traces connected to the leads, and a bottom layer including bottom filled vias including contact pads through a bottom dielectric and metal layer. The top filled vias are for connecting the bottom and top metal layer. The bottom metal filled vias are for connecting the bottom metal layer to the contact pads. An integrated circuit (IC) die has nodes in its circuitry connected to the bond pads. The IC die is flipchip mounted onto the leads. A passive device(s) is surface mounted by an electrically conductive material on the top metal layer electrically connected between at least one adjacent pair of the leads. A mold compound is for encapsulating at least the IC die and passive device.

公开(公告)号：US12211800B2

公开(公告)日：2025-01-28

申请号：US17500086

申请日：2021-10-13

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Yiqi Tang ,  Rajen Manicon Murugan ,  Liang Wan ,  Makarand Ramkrishna Kulkarni ,  Jie Chen ,  Steven Alfred Kummerl

IPC: H01L21/48 ,  H01L23/00 ,  H01L23/538

Abstract: A semiconductor package includes a first layer including a semiconductor die and a shunt embedded within a first dielectric substrate layer, and metal pillars extending therethrough. The semiconductor package further includes a second layer stacked on the first layer, the second layer including a metal trace patterned on the first dielectric substrate layer, and a second dielectric substrate layer over the metal trace. The metal trace electrically connects a first portion of the shunt to a first metal pillar of the metal pillars and electrically connects a second portion of the shunt to a second metal pillar of the metal pillars. The semiconductor package further includes a base layer opposite the second layer relative the first layer, the base layer forming exposed electrical contact pads for the semiconductor package, the electrical contact pads providing electrical connections to the shunt, the metal pillars, and the semiconductor die.

公开(公告)号：US12113293B2

公开(公告)日：2024-10-08

申请号：US18169682

申请日：2023-02-15

Applicant: Texas Instruments Incorporated

Inventor： Yiqi Tang ,  Rajen Manicon Murugan

IPC: H01Q23/00 ,  H01L23/66 ,  H01Q1/22

CPC classification number: H01Q23/00 ,  H01L23/66 ,  H01Q1/2283

Abstract: An AIP includes a package substrate including a top layer including a top metal layer including a first antenna type and a second antenna type, and a bottom layer including a bottom dielectric and a metal layer including a first and second contact pad and filled vias, and an IC embedded therein. Bond pads of an IC are coupled by a connection including≥1 filled via for connecting to the top and/or bottom metal layer. A first metal pillar is between the first contact pad and first antenna, and a second metal pillar is between the second contact pad and second antenna. A first filled via is coupled to the first metal pillar providing a transmission line from the first contact pad to the first antenna. A second filled via is coupled to the first metal pillar providing a transmission line from the second contact pad to the second antenna.

公开(公告)号：US20240297109A1

公开(公告)日：2024-09-05

申请号：US18657689

申请日：2024-05-07

Applicant: Texas Instruments Incorporated

Inventor： Sylvester Ankamah-Kusi ,  Yiqi Tang ,  Rajen Manicon Murugan ,  Sreenivasan K. Koduri

IPC: H01L23/498 ,  H01L21/48 ,  H01L21/683 ,  H01L23/00

CPC classification number: H01L23/49838 ,  H01L21/4857 ,  H01L23/49822 ,  H01L21/6835 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L2221/68345 ,  H01L2224/1416 ,  H01L2224/16225 ,  H01L2224/17106 ,  H01L2224/81385 ,  H01L2224/81815

Abstract: An electronic device includes a multilevel package substrate with first and second levels extending in planes of first and second directions and spaced apart from one another along a third direction, the first level having a first side with landing areas spaced apart from one another along the first direction. The multilevel package substrate includes a conductive structure having first and second ends and conductive portions in the first and second levels that provide a conductive path along the first direction from the landing areas toward the second end, where the conductive structure includes indents that extend into the conductive portions in the first level, the indents spaced apart from one another along the first direction and positioned along the first direction between respective pairs of the landing areas.