公开(公告)号：US11018232B2

公开(公告)日：2021-05-25

申请号：US16875877

申请日：2020-05-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Cheng-Ming Lin ,  Peng-Soon Lim ,  Zi-Wei Fang

IPC: H01L29/417 ,  H01L21/8234 ,  H01L29/78 ,  H01L21/8238 ,  H01L29/66

Abstract: A semiconductor device includes a semiconductor substrate, a pair of source/drain regions, and a gate stack. The pair of source/drain regions is on the semiconductor substrate. The gate stack is laterally between the source/drain regions and includes a gate dielectric layer over the semiconductor fin, a metal element-containing layer over the gate dielectric layer, and a fill metal layer over the metal element-containing layer. The metal element-containing layer has a dopant, and a concentration of the dopant in an upper portion of the metal element-containing layer is higher than a concentration of the dopant in a bottom portion of the metal element-containing layer.

公开(公告)号：US20210057581A1

公开(公告)日：2021-02-25

申请号：US16549245

申请日：2019-08-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Ming Lin ,  Sai-Hooi Yeong ,  Ziwei Fang ,  Chi On Chui ,  Huang-Lin Chao

IPC: H01L29/78 ,  H01L29/51 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66

Abstract: The present disclosure relates to a semiconductor device including a substrate and first and second spacers on the substrate. The semiconductor device also includes a gate stack between the first and second spacers. The gate stack includes a gate dielectric layer having a first portion formed on the substrate and a second portion formed on the first and second spacers; an internal gate formed on the first and second portions of the gate dielectric layer; a ferroelectric dielectric layer formed on the internal gate and in contact with the gate dielectric layer; and a gate electrode on the ferroelectric dielectric layer.

公开(公告)号：US10707320B2

公开(公告)日：2020-07-07

申请号：US16218151

申请日：2018-12-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Ming Lin ,  Kai Tak Lam ,  Sai-Hooi Yeong ,  Chi On Chui ,  Ziwei Fang

IPC: H01L21/00 ,  H01L29/51 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78 ,  H01L21/28 ,  H01L21/768

Abstract: A method of forming a semiconductor device includes forming a hafnium-containing layer over a semiconductor layer, simultaneously performing a thermal annealing process and applying an electrical field to the hafnium-containing layer to form a ferroelectric hafnium-containing layer, and forming a gate electrode over the ferroelectric hafnium-containing layer.

公开(公告)号：US20190137869A1

公开(公告)日：2019-05-09

申请号：US15832752

申请日：2017-12-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsun-Cheng Tang ,  Cheng-Ming Lin ,  Sheng-Chang Hsu ,  Hao-Ming Chang ,  Waylen Chang

IPC: G03F1/84 ,  G01N21/95 ,  G01B11/02 ,  G01N21/88 ,  G03F1/42 ,  G03F7/20

Abstract: In accordance with some embodiments of the present disclosure, an inspection method of a photomask includes performing a first inspection process, unloading the photomask from the inspection system, and performing a second inspection process. In the first inspection process, a common Z calibration map of an objective lens of an optical module with respect to the photomask is generated and stored, and a first image of the photomask is captured by using an image sensor while focusing the objective lens of the optical module based on the common Z calibration map. The photomask is unloaded from the inspection system. In the second inspection process, the photomask is loaded on the inspection system and a second image of the photomask is captured by using an image sensor while focusing an objective lens of an optical module based on the common Z calibration map generated in the first inspection process.

公开(公告)号：US20180348625A1

公开(公告)日：2018-12-06

申请号：US15687541

申请日：2017-08-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Ming Lin ,  Cheng-Hsuen Chiang ,  Chih-Ming Chen ,  Huai-Chih Cheng ,  Hao-Ming Chang ,  Hsao Shih ,  Hsin-Yi Yin

IPC: G03F1/26

Abstract: A method of manufacturing a photomask includes at least the following steps. First, a phase shift layer and a hard mask layer are formed on a light transmitting substrate. A predetermined mask pattern is split into a first pattern and a second pattern. A series of processes is performed so that the hard mask layer and the phase shift layer have the first pattern and the second pattern. The series of processes includes at least the following steps. First, a first exposure process for transferring the first pattern is performed. Thereafter, a second exposure process for transferring the second pattern is performed. The first exposure process and the second exposure process are executed by different machines.