公开(公告)号：US06563172B2

公开(公告)日：2003-05-13

申请号：US09770388

申请日：2001-01-29

申请人： Yoshiko Yoshida ,  Hideki Naruoka ,  Yasuhiro Kimura ,  Yasuo Yamaguchi ,  Toshiaki Iwamatsu ,  Yuuichi Hirano

发明人： Yoshiko Yoshida ,  Hideki Naruoka ,  Yasuhiro Kimura ,  Yasuo Yamaguchi ,  Toshiaki Iwamatsu ,  Yuuichi Hirano

IPC分类号： H01L2701

CPC分类号： H01L21/7624 ,  H01L21/3105 ,  H01L21/31155

摘要： An object is to provide a semiconductor substrate processing method and a semiconductor substrate that prevent formation of particles from the edge part of the substrate. Silicon ions are implanted into the edge part of an SOI substrate (10) in the direction of radiuses of the SOI substrate (10) to bring a buried oxide film (2) in the edge part of the SOI substrate (10) into a silicon-rich state. Thus an SOI substrate (100) is provided, where the buried oxide film (2) has substantially been eliminated in the edge part.

公开(公告)号：US06461447B1

公开(公告)日：2002-10-08

申请号：US09607626

申请日：2000-06-30

申请人： Hiroshi Shinyashiki ,  Hiroshi Koya ,  Tomonori Yamaoka ,  Kazuhito Matsukawa ,  Yasuhiro Kimura ,  Hidekazu Yamamoto

发明人： Hiroshi Shinyashiki ,  Hiroshi Koya ,  Tomonori Yamaoka ,  Kazuhito Matsukawa ,  Yasuhiro Kimura ,  Hidekazu Yamamoto

IPC分类号： H01L2900

CPC分类号： C30B29/06 ,  C30B15/203

摘要： A substrate having a surface on which silicon is epitaxially grown; wherein the substrate is cut from an oxygen induced stacking fault generation area of a single crystal silicon rod grown by the Czochralski method.

摘要翻译： 具有外延生长硅的表面的衬底; 其特征在于，所述基板由通过切克劳斯基法（Czochralski）法生长的单晶硅棒的氧诱导堆垛层错产生区切割。

公开(公告)号：US5946543A

公开(公告)日：1999-08-31

申请号：US8656

申请日：1998-01-16

申请人： Yasuhiro Kimura ,  Morihiko Kume ,  Tsuneaki Fujise ,  Masanori Gohara

发明人： Yasuhiro Kimura ,  Morihiko Kume ,  Tsuneaki Fujise ,  Masanori Gohara

IPC分类号： G01N33/00 ,  G01N21/95 ,  H01L21/66 ,  H01L23/544

CPC分类号： H01L22/34 ,  G01N21/9501 ,  H01L22/20 ,  H01L22/24 ,  H01L22/12 ,  Y10S148/162

摘要： An object is to obtain a semiconductor wafer evaluation method and a semiconductor device manufacturing method having a reduced turn-around time and requiring no process apparatus and no dielectric breakdown characteristic evaluation device in evaluation of the dielectric breakdown characteristic of the oxide film. A sample wafer (1) is etched by using an SC-1 solution bath (2) to change process defects caused in the fabrication process including mirror polishing into pits. The number of pits is detected with a dust particle inspection system, and the dielectric breakdown characteristic of the sample wafer 1 can be evaluated by using the number of detected pits and previously obtained relations between the number of pits and the dielectric breakdown characteristic.

摘要翻译： 本发明的目的是获得半导体晶片评估方法和半导体器件制造方法，其具有缩短的周转时间，并且在评估氧化膜的电介质击穿特性时不需要处理装置和绝缘击穿特性评估装置。 通过使用SC-1溶液浴（2）蚀刻样品晶片（1），以将包括镜面抛光在内的制造过程中引起的工艺缺陷改变为凹坑。 利用尘埃粒子检查系统检测凹坑的数量，并且可以通过使用检测到的凹坑的数量和先前获得的凹坑数量和介电击穿特性之间的关系来评估样品晶片1的介电击穿特性。

公开(公告)号：US5876819A

公开(公告)日：1999-03-02

申请号：US554509

申请日：1995-11-07

申请人： Yasuhiro Kimura ,  Keiji Yamauchi ,  Hidekazu Yamamoto ,  Shigehisa Yamamoto ,  Masafumi Katsumata ,  Yasukazu Mukogawa ,  Hajime Watanabe

发明人： Yasuhiro Kimura ,  Keiji Yamauchi ,  Hidekazu Yamamoto ,  Shigehisa Yamamoto ,  Masafumi Katsumata ,  Yasukazu Mukogawa ,  Hajime Watanabe

IPC分类号： C30B33/00 ,  G03F9/00 ,  H01L23/544 ,  B32B3/02

CPC分类号： C30B29/06 ,  C30B33/00 ,  G03F9/7003 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54493 ,  H01L2924/0002 ,  Y10S438/975 ,  Y10T428/21 ,  Y10T428/216 ,  Y10T428/219

摘要： A semiconductor substrate with no reduction in the effective usage area and mechanical strength, and non-uniformity of the resist film thickness, and method of manufacturing and using the same are obtained. A detection mark for detecting the crystal orientation of a silicon wafer having an outer perimeter entirely of a circular contour is formed at a predetermined region of the silicon wafer. The crystal orientation of the semiconductor wafer can easily be detected with the outer perimeter still taking a circular contour. Therefore, various problems encountered in a conventional semiconductor substrate having an orientation flat or notch such as reduction in mechanical strength and effective usage area, and non-uniformity of the resist film can be circumvented.

摘要翻译： 获得了不降低有效使用面积和机械强度以及抗蚀剂膜厚度的不均匀性的半导体衬底及其制造和使用方法。 在硅晶片的预定区域处形成用于检测具有整个圆形轮廓的外周的硅晶片的晶体取向的检测标记。 半导体晶片的晶体取向可以容易地被检测到外周仍然采取圆形轮廓。 因此，可以避免在具有取向平面或缺口的常规半导体衬底中遇到的各种问题，例如机械强度降低和有效使用面积，以及抗蚀剂膜的不均匀性。

公开(公告)号：US4595479A

公开(公告)日：1986-06-17

申请号：US543295

申请日：1983-10-19

申请人： Yasuhiro Kimura ,  Katsumi Niki

发明人： Yasuhiro Kimura ,  Katsumi Niki

IPC分类号： C12Q1/00 ,  G01N27/333 ,  G01N33/487 ,  G01N33/72 ,  C25B11/12

CPC分类号： C12Q1/008 ,  B82Y30/00 ,  G01N33/72 ,  G01N2333/795

摘要： A chemically modified electrode comprising a pyrolytic graphite surface, wherein the basal plane of graphite is exposed on said surface and a redox/adsorption electron mediator is irreversibly absorped directly onto the basal plane of graphite on said surface, is disclosed along with methods of using this electrode.

摘要翻译： 一种包括热解石墨表面的化学改性电极，其中所述石墨的基面平面暴露在所述表面上，并且氧化还原/吸附电子介体直接不可逆地吸收在所述表面上的石墨的基面上，以及使用该方法 电极。

公开(公告)号：US4594694A

公开(公告)日：1986-06-10

申请号：US528962

申请日：1983-09-02

申请人： Katsuyuki Tanaka ,  Yasuhiro Kimura ,  Masanori Kato ,  Satosi Kuwakado

发明人： Katsuyuki Tanaka ,  Yasuhiro Kimura ,  Masanori Kato ,  Satosi Kuwakado

IPC分类号： G01S3/80 ,  G01S3/809 ,  G01S5/20

CPC分类号： G01S5/20

摘要： A sound source searching device for searching an objective sound source out of a plurality of sound sources, is disclosed. The device comprises an intensity probe provided with one pair of microphones, pulse motors for rotating the probe on the horizontal and vertical planes, a computer for calculating acoustic intensity corresponding to the frequency of the objective sound source from the sound pressure signal generated by the intensity probe, an interface device provided with pulse motor driving circuits for driving the pulse motors in accordance with the instructions of the computer by predetermined angles and an indicator for indicating the direction in which the acoustic intensity is the minimum on the horizontal and the vertical planes, as the direction of the objective sound source.

摘要翻译： 公开了一种用于从多个声源搜索目标声源的声源搜索装置。 该装置包括设置有一对麦克风的强度探针，用于在水平和垂直平面上旋转探针的脉冲电机，用于根据由强度产生的声压信号计算与目标声源的频率相对应的声强的计算机 探针，具有根据计算机的指令以预定角度驱动脉冲电机的脉冲电机驱动电路的接口装置和用于指示声强度在水平和垂直平面上最小的方向的指示器， 作为客观声源的方向。