公开(公告)号：US20090263159A1

公开(公告)日：2009-10-22

申请号：US12420091

申请日：2009-04-08

申请人： Kenichi Isomi ,  Tetsushi Ito ,  Hirotsugu Akamatsu ,  Tetsuya Yamaguchi ,  Shuichi Mochizuki

发明人： Kenichi Isomi ,  Tetsushi Ito ,  Hirotsugu Akamatsu ,  Tetsuya Yamaguchi ,  Shuichi Mochizuki

IPC分类号： G03G15/00

CPC分类号： G03G15/0105 ,  G03G15/5008 ,  G03G2215/0132

摘要： An image forming apparatus including: a first and a second photoconductor groups constituted of one or more photoconductors respectively; a first and a second drive control sections for controlling the drive of the first and the second photoconductor groups respectively to rotate the photoconductors thereof, wherein the rotational phases of the first photoconductor group and the second photoconductor group are adjusted to be matched therebetween; and the first and the second drive control sections control so that the first and the second photoconductor groups are driven simultaneously with an equal target speed during a formation of a image, wherein an initial drive speed is lower than a predetermined speed for image-formation, and after the first and the second photoconductor groups reaches the initial drive speed, the target speed is changed from the initial drive speed to the speed for image-formation.

摘要翻译： 一种图像形成装置，包括：分别由一个或多个感光体构成的第一和第二光电导体组; 第一和第二驱动控制部分，用于分别控制第一和第二光电导体组的驱动以旋转其感光体，其中调节第一光电导体组和第二光电导体组的旋转相位以使其匹配; 第一驱动控制部和第二驱动控制部进行控制，使得在形成图像期间以相同的目标速度同时驱动第一和第二光电导体组，其中初始驱动速度低于用于图像形成的预定速度， 并且在第一和第二光电导体组达到初始驱动速度之后，目标速度从初始驱动速度变为图像形成速度。

公开(公告)号：US20080201682A1

公开(公告)日：2008-08-21

申请号：US12081431

申请日：2008-04-16

申请人： Naoyuki Shigyo ,  Tetsuya Yamaguchi

发明人： Naoyuki Shigyo ,  Tetsuya Yamaguchi

IPC分类号： G06F17/50

CPC分类号： H01L23/5222 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of designing a wiring structure of an LSI is capable of reducing a capacitance variation ratio ΔC/C or a resistance-by-capacitance variation ratio Δ(RC)/(RC) of the wiring structure. The method sets a process-originated variation ratio (∈P) for the wiring structure, a tolerance (ξC) for the capacitance variation ratio (ΔC/C), and a tolerance (ξRC) for the resistance-by-capacitance variation ratio (Δ(RC)/(RC)), evaluates a fringe capacitance ratio (F=CF/CP) according to a fringe capacitance CF and parallel-plate capacitance CP of the wiring structure, and determines the wiring structure so that the fringe capacitance ratio (F) may satisfy the following: For    Δ   C C  ≤ ξ C ,  F ≥ δ P ξ C - 1 ( 1 ) For    Δ  ( RC ) RC  ≤ ξ RC ,  F ≤ ( 1 - δ P )  δ P δ P - ξ RC - 1 ( 2 ) The method employs an equivalent-variations condition defined as |ΔC/C|=|Δ(RC)/(RC)| to determine the shape parameters of each wire of the wiring structure.

公开(公告)号：US07224003B2

公开(公告)日：2007-05-29

申请号：US11387819

申请日：2006-03-24

申请人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

发明人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

IPC分类号： H01L31/0328

CPC分类号： H01L27/14621 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L31/035236 ,  Y10S257/927

摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.

摘要翻译： 本发明提供一种固态摄像装置，其能够容易地放大信号存储部中的信号电荷，并且不会降低元件的动态范围，处于黑暗状态的热噪声，图像滞后和 所以即使MOS固态摄像装置的像素尺寸减小，读门电压降低，也增加了阱中的浓度。 根据本发明的固态图像拾取装置包括具有用于构成光电转换区域的用于扩散层的表面的p型硅衬底和读取MOS场效应的漏极 形成晶体管。 由p型扩散层的下方形成由n型扩散层形成的信号累积部。 MOS场效应晶体管的栅电极在衬底的表面上形成在扩散层和漏极之间。 与MOS晶体管的栅电极相邻的信号累积部分的端部的位置在p0 +扩散层的读取栅电极的末端延伸到栅电极下方的位置。

公开(公告)号：US07042061B2

公开(公告)日：2006-05-09

申请号：US10727515

申请日：2003-12-05

申请人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

发明人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

IPC分类号： H01L31/06 ,  H01L27/148

CPC分类号： H01L27/14621 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L31/035236 ,  Y10S257/927

摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.

摘要翻译： 本发明提供一种固态摄像装置，其能够容易地放大信号存储部中的信号电荷，并且不会降低元件的动态范围，处于黑暗状态的热噪声，图像滞后和 所以即使MOS固态摄像装置的像素尺寸减小，读门电压降低，也增加了阱中的浓度。 根据本发明的固态图像拾取装置包括具有用于构成光电转换区域的用于扩散层的表面的p型硅衬底和读取MOS场效应的漏极 形成晶体管。 由p型扩散层的下方形成由n型扩散层形成的信号累积部。 MOS场效应晶体管的栅电极在衬底的表面上形成在扩散层和漏极之间。 与MOS晶体管的栅电极相邻的信号累积部分的端部的位置在p0 +扩散层的读取栅电极的末端延伸到栅电极下方的位置。

公开(公告)号：US06978434B1

公开(公告)日：2005-12-20

申请号：US09602253

申请日：2000-06-23

申请人： Naoyuki Shigyo ,  Tetsuya Yamaguchi

发明人： Naoyuki Shigyo ,  Tetsuya Yamaguchi

IPC分类号： H01L21/3205 ,  G06F17/50 ,  H01L21/82 ,  H01L23/522 ,  H01L29/06 ,  H03K19/003

CPC分类号： H01L23/5222 ,  H01L2924/0002 ,  H01L2924/00

摘要： A wiring structure of a semiconductor device, includes a wiring layer formed on an insulating film, a width (W) of each wire in the wiring layer and a thickness (H) of the insulating film satisfying “W/H

摘要翻译： 半导体器件的布线结构包括形成在绝缘膜上的布线层，布线层中的布线的宽度（W）和绝缘膜的厚度（H）满足“W / H <1”的长度 布线层中的各布线的长度（L）等于或大于1mm。

公开(公告)号：US06728937B2

公开(公告)日：2004-04-27

申请号：US09750727

申请日：2000-12-28

申请人： Naoki Wakita ,  Tetsuya Yamaguchi

发明人： Naoki Wakita ,  Tetsuya Yamaguchi

IPC分类号： G06F1750

CPC分类号： H01L22/20

摘要： In the disclosed invention, the influence of the dispersions of the gate lengths and the gate widths is prevented from adversely affecting circuit parameters except for the specific circuit parameter. According to this invention, the circuit parameters can be correctly extracted, and circuit characteristics can be accurately predicted.

摘要翻译： 在所公开的发明中，防止栅极长度和栅极宽度的分散的影响不利于电路参数的不利影响，特定电路参数除外。 根据本发明，可以正确地提取电路参数，并且可以准确地预测电路特性。

公开(公告)号：US06690423B1

公开(公告)日：2004-02-10

申请号：US09272337

申请日：1999-03-19

申请人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

发明人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

IPC分类号： H04N314

CPC分类号： H01L27/14621 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L31/035236 ,  Y10S257/927

摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.

摘要翻译： 本发明提供一种固态摄像装置，其能够容易地放大信号存储部中的信号电荷，并且不会降低元件的动态范围，处于黑暗状态的热噪声，图像滞后和 所以即使MOS固态摄像装置的像素尺寸减小，读门电压降低，也增加了阱中的浓度。 根据本发明的固态摄像装置包括具有表面的p型硅衬底，在其上形成用于构成光电转换区域的p +扩散层和读取MOS场效应晶体管的漏极。 由p +扩散层的下方形成由n型扩散层形成的信号累积部。 MOS场效应晶体管的栅电极在衬底的表面上形成在p +扩散层和漏极之间。 与MOS晶体管的栅电极相邻的信号累积部分的端部的位置在p +扩散层的读取栅电极的末端延伸到栅电极下方的位置。

公开(公告)号：US06674470B1

公开(公告)日：2004-01-06

申请号：US08933975

申请日：1997-09-19

申请人： Nagataka Tanaka ,  Eiji Oba ,  Keiji Mabuchi ,  Michio Sasaki ,  Ryohei Miyagawa ,  Hirofumi Yamashita ,  Yoshinori Iida ,  Hisanori Ihara ,  Tetsuya Yamaguchi

发明人： Nagataka Tanaka ,  Eiji Oba ,  Keiji Mabuchi ,  Michio Sasaki ,  Ryohei Miyagawa ,  Hirofumi Yamashita ,  Yoshinori Iida ,  Hisanori Ihara ,  Tetsuya Yamaguchi

IPC分类号： H04N314

CPC分类号： H04N5/3765 ,  H04N5/3575 ,  H04N5/37457

摘要： A solid state imaging device comprises a plurality of unit cells formed in a surface region of a semiconductor substrate. Each of the unit cells comprises a photoelectric converter, an MOS-type read-out transistor for reading a signal from the photoelectric converter, an MOS-type amplifying transistor having a gate connected to a drain of the read-out transistor and for amplifying the signal read by the read-out transistor, a reset transistor having a source connected to the drain of the read-out transistor and for resetting a potential of a gate of the amplifying transistor, and an addressing element connected in series to the amplifying transistor and for selecting the unit cell. The read-out transistor is formed in a first device region in the semiconductor substrate. The reset transistor is formed in a second device region in the semiconductor substrate. The drain of the read-out transistor is connected to the source of the reset transistor through a wiring layer formed on the surface of the semiconductor substrate.

摘要翻译： 固态成像装置包括形成在半导体衬底的表面区域中的多个单元电池。 每个单电池包括光电转换器，用于读取来自光电转换器的信号的MOS型读出晶体管，MOS型放大晶体管，其栅极连接到读出晶体管的漏极，并用于放大 由读出晶体管读取的信号，复位晶体管，其源极连接到读出晶体管的漏极，并用于复位放大晶体管的栅极的电位;以及寻址元件，串联连接到放大晶体管， 用于选择单元格。 读出晶体管形成在半导体衬底中的第一器件区域中。 复位晶体管形成在半导体衬底中的第二器件区域中。 读出晶体管的漏极通过形成在半导体衬底的表面上的布线层连接到复位晶体管的源极。

公开(公告)号：US5807089A

公开(公告)日：1998-09-15

申请号：US659985

申请日：1996-06-07

申请人： Yuichi Tsumagari ,  Shigeki Iwanami ,  Shigeru Hisanaga ,  Yasuhiro Oki ,  Shinya Yamamoto ,  Tetsuya Yamaguchi ,  Shinsuke Aso ,  Tetsuo Yoshida ,  Masao Iguchi ,  Yasushi Watanabe ,  Izuru Shimizu

发明人： Yuichi Tsumagari ,  Shigeki Iwanami ,  Shigeru Hisanaga ,  Yasuhiro Oki ,  Shinya Yamamoto ,  Tetsuya Yamaguchi ,  Shinsuke Aso ,  Tetsuo Yoshida ,  Masao Iguchi ,  Yasushi Watanabe ,  Izuru Shimizu

IPC分类号： F01C17/06 ,  F04C18/04

CPC分类号： F01C17/06

摘要： A scroll type compressor having a housing unit in which a movable scroll element and a stationary scroll element are received in such a relationship that the movable scroll element orbits about the center of the stationary scroll element. The scroll type compressor further having a mechanical reinforced rotation preventing unit for preventing rotation of the movable scroll element about its own axis, and the rotation preventing unit having first stationary pin fixed to an inner end face of the housing unit and second movable pin fixed to an end face of a base plate of the movable scroll element, and a ring engaged with the first and second rings. A thickness T1 between the outer circumference of the first pin and the inner edge of the inner end face of the housing unit is set to be equal to or larger than 2.4 mm. A thickness T2 between the outer circumference of the second pin and the outer circumference of the base plate of the movable scroll element is set to be equal to or larger than 2.7 mm. A radial wall thickness T3 of the ring between the outer and inner cylindrical surfaces thereof is set to be equal to or larger than 1.7 mm.

摘要翻译： 一种涡旋式压缩机，其具有容纳单元，其中以与所述可动涡旋元件围绕所述静止涡旋元件的中心轨道运动的关系来容纳可动涡旋元件和固定涡旋元件。 所述涡旋式压缩机还具有用于防止所述可动涡旋件绕其自身轴线旋转的机械加强旋转防止单元，并且所述旋转防止单元具有固定到所述壳体单元的内端面的第一固定销和固定到所述壳体单元的第二可动销 可动涡旋元件的基板的端面和与第一和第二环接合的环。 第一销的外周与外壳单元的内端面的内缘之间的厚度T1设定为2.4mm以上。 将第二销的外周与动涡旋件的基板的外周之间的厚度T2设定为2.7mm以上。 其外圆筒形表面和内圆柱形表面之间的环的径向壁厚度T3被设定为等于或大于1.7mm。

公开(公告)号：US5547353A

公开(公告)日：1996-08-20

申请号：US510600

申请日：1995-08-03

申请人： Tetsuya Yamaguchi ,  Yasushi Watanabe ,  Tetsuhiko Fukanuma ,  Yasuhiro Oki ,  Yuuji Yamamoto

发明人： Tetsuya Yamaguchi ,  Yasushi Watanabe ,  Tetsuhiko Fukanuma ,  Yasuhiro Oki ,  Yuuji Yamamoto

IPC分类号： F04C18/02 ,  F01C1/04

CPC分类号： F04C18/0215 ,  F04C18/0246 ,  F04C2250/20 ,  F04C2250/30

摘要： A scroll type compressor includes a front housing, a fixed scroll, a movable scroll and a rear housing, and its lateral cross section has a substantially oval shape. The spiral element of the movable scroll is located in the space defined by the front housing and the fixed scroll in such a way as to engage with the spiral element of the fixed scroll. The space defined by the fixed scroll and the rear housing serves as a discharge chamber where compressed refrigerant gas is discharged. Since this compressor has the same compression displacement as that of a compressor having a circular cross section, this compressor can be placed in narrow space whose width is less than the width of the circular compressor, without any reduction in the cooling performance.

摘要翻译： 涡旋式压缩机包括前壳体，固定涡旋件，动涡旋件和后壳体，其横截面具有大致椭圆形。 动涡旋盘的螺旋元件位于由前壳体和固定涡旋件限定的空间中，以与固定涡旋件的螺旋元件相接合。 由固定涡旋件和后壳体限定的空间用作排出压缩的制冷剂气体的排出室。 由于该压缩机具有与具有圆形截面的压缩机相同的压缩位移，所以该压缩机可以放置在宽度小于圆形压缩机的宽度的狭窄空间中，而不会降低冷却性能。