公开(公告)号：US10020167B2

公开(公告)日：2018-07-10

申请号：US15015215

申请日：2016-02-04

Applicant: Tokyo Electron Limited

Inventor： Yohei Yamazawa

IPC: C23C16/00 ,  H01L21/306 ,  H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32715

Abstract: A plasma processing apparatus includes: a processing chamber; a substrate holding unit; a processing gas supply unit; a RF antenna having an inner antenna coil and an outer antenna coil; a high frequency power supply unit; at least one floating coil that is in an electrically floating state and provided outside the processing chamber to be coupled to at least one of the inner antenna coil and the outer antenna coil by an electromagnetic induction; and a capacitor. The inner antenna coil includes a single inner coil segment or more than one inner coil segments connected in series, the outer antenna coil includes a plurality of outer coil segments segmented in a circumferential direction and electrically connected with each other in parallel, and the at least one floating coil is positioned between the inner antenna coil and the outer antenna coil in a radial direction.

公开(公告)号：US09899191B2

公开(公告)日：2018-02-20

申请号：US14250783

申请日：2014-04-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei Yamazawa ,  Chishio Koshimizu ,  Masashi Saito ,  Kazuki Denpoh ,  Jun Yamawaku

IPC: C23C16/00 ,  H01L21/306 ,  H01J37/32 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32146 ,  H01L21/67109 ,  H01L21/6831

Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.

公开(公告)号：US20130340937A1

公开(公告)日：2013-12-26

申请号：US13975674

申请日：2013-08-26

Applicant: Tokyo Electron Limited

Inventor： Yohei Yamazawa ,  Naohiko Okunishi ,  Hironobu Misawa ,  Hidehito Soeta

IPC: H01J37/32

CPC classification number: H01J37/32623 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/3255 ,  H01J37/32697

Abstract: A plasma processing apparatus includes at least one asymmetry member that causes a non-uniformity of plasma density around the high frequency electrode; and a plasma density distribution controller that is arranged depending on arrangement of the at least one asymmetry member to suppress the non-uniformity of plasma density around the high frequency electrode in the azimuthal direction. The plasma density distribution controller includes a first conductor which has first and second surfaces facing opposite directions to each other and is electrically connected with the rear surface of the high frequency electrode with respect to the first high frequency power; and a second conductor which includes a first connecting portion(s) electrically connected with a portion of the second surface of the first conductor and a second connecting portion electrically connected with a conductive grounding member electrically grounded around the high frequency electrode with respect to the first high frequency power.

Abstract translation: 等离子体处理装置包括至少一个不对称构件，其引起高频电极周围的等离子体密度的不均匀性; 以及等离子体密度分布控制器，其根据所述至少一个不对称构件的布置被布置，以抑制所述高频电极围绕所述方位方向的等离子体密度的不均匀性。 等离子体密度分布控制器包括：第一导体，其具有彼此相反的方向的第一和第二表面，并且相对于第一高频功率与高频电极的后表面电连接; 以及第二导体，其包括与所述第一导体的所述第二表面的一部分电连接的第一连接部分和与所述高频电极相对于所述第一导体接地部分电接地的导电接地部件电连接的第二连接部分 高频功率