公开(公告)号：US10804076B2

公开(公告)日：2020-10-13

申请号：US15079381

申请日：2016-03-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei Yamazawa ,  Chishio Koshimizu ,  Kazuki Denpoh ,  Jun Yamawaku ,  Masashi Saito

IPC: C23C16/00 ,  H01L21/326 ,  H01J37/32 ,  C23C16/50 ,  C23C16/455 ,  H05H1/46

Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil shaped RF antenna provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be processed; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a desired plasma process on the target substrate; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber. The apparatus further includes a floating coil electrically floated and arranged at a position outside the processing chamber where the floating coil is to be coupled with the RF antenna by an electromagnetic induction; and a capacitor provided in a loop of the floating coil.

公开(公告)号：US09899191B2

公开(公告)日：2018-02-20

申请号：US14250783

申请日：2014-04-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei Yamazawa ,  Chishio Koshimizu ,  Masashi Saito ,  Kazuki Denpoh ,  Jun Yamawaku

IPC: C23C16/00 ,  H01L21/306 ,  H01J37/32 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32146 ,  H01L21/67109 ,  H01L21/6831

Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.

公开(公告)号：US09997332B2

公开(公告)日：2018-06-12

申请号：US15008064

申请日：2016-01-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei Yamazawa ,  Masashi Saito ,  Kazuki Denpoh ,  Chishio Koshimizu ,  Jun Yamawaku

IPC: C23C16/00 ,  H01L21/306 ,  H01J37/32 ,  H05H1/46 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6831 ,  H05H1/46

Abstract: A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit; and a secondary coil provided such that the coils are coupled with each other by an electromagnetic induction therebetween while being arranged closer to a bottom surface of the dielectric window than the primary coil.

公开(公告)号：US09941097B2

公开(公告)日：2018-04-10

申请号：US14250514

申请日：2014-04-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei Yamazawa ,  Chishio Koshimizu ,  Masashi Saito ,  Kazuki Denpoh ,  Jun Yamawaku

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32146 ,  H01L21/67109 ,  H01L21/6831

Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.

公开(公告)号：US09455133B2

公开(公告)日：2016-09-27

申请号：US13854910

申请日：2013-04-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuki Denpoh ,  Peter L G Ventzek ,  Lin Xu ,  Lee Chen

IPC: H01L21/02 ,  H01J31/00 ,  H01J37/32 ,  C23C16/455 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509

CPC classification number: H01L21/02 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  H01J31/00 ,  H01J37/3244 ,  H01J37/32596

Abstract: A chamber component configured to be coupled to a processing chamber is described. The chamber component comprises one or more adjustable gas passages through which a process gas is introduced to the process chamber. The adjustable gas passage may be configured to form a hollow cathode that creates a hollow cathode plasma in a hollow cathode region having one or more plasma surfaces in contact with the hollow cathode plasma. Therein, at least one of the one or more plasma surfaces is movable in order to vary the size of the hollow cathode region and adjust the properties of the hollow cathode plasma. Furthermore, one or more adjustable hollow cathodes may be utilized to adjust a plasma process for treating a substrate.