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公开(公告)号：US20130076550A1
公开(公告)日：2013-03-28
申请号：US13536085
申请日：2012-06-28
申请人： Takao MARUKAME , Tetsufumi Tanamoto , Atsuhiro Kinoshita , Tomoaki Inokuchi , Masamichi Suzuki , Yoshiaki Saito
发明人： Takao MARUKAME , Tetsufumi Tanamoto , Atsuhiro Kinoshita , Tomoaki Inokuchi , Masamichi Suzuki , Yoshiaki Saito
IPC分类号： H03M1/34
CPC分类号： H03M1/1061 , H01L27/22 , H01L43/08 , H03M1/365
摘要： According to an embodiment, an analog-to-digital converter includes a voltage generating unit, and a plurality of comparators. The voltage generating unit is configured to divide a reference voltage by a plurality of variable resistors to generate a plurality of comparative voltages. Each of the plurality of comparator is configured to compare any one of the plurality of comparative voltages with an analog input voltage and output a digital signal based on a result of a comparison between the comparative voltage and the analog input voltage. Each of the plurality of variable resistors includes a plurality of variable resistive elements that are connected in series, and each of the plurality of variable resistive elements has a resistance value that is variably set according to an external signal.
摘要翻译： 根据实施例，模数转换器包括电压产生单元和多个比较器。 电压产生单元被配置为通过多个可变电阻器分压参考电压以产生多个比较电压。 多个比较器中的每一个被配置为将多个比较电压中的任何一个与模拟输入电压进行比较，并且基于比较电压和模拟输入电压之间的比较结果输出数字信号。 多个可变电阻器中的每一个包括串联连接的多个可变电阻元件，并且多个可变电阻元件中的每一个具有根据外部信号可变地设置的电阻值。
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公开(公告)号：US20130076551A1
公开(公告)日：2013-03-28
申请号：US13535118
申请日：2012-06-27
申请人： Takao MARUKAME , Tetsufumi Tanamoto , Atsuhiro Kinoshita , Tomoaki Inokuchi , Masamichi Suzuki , Yoshiaki Saito
发明人： Takao MARUKAME , Tetsufumi Tanamoto , Atsuhiro Kinoshita , Tomoaki Inokuchi , Masamichi Suzuki , Yoshiaki Saito
IPC分类号： H03M1/36
CPC分类号： H03M1/1061 , H03F3/45183 , H03F2203/45391 , H03F2203/45392 , H03F2203/45674 , H03K5/2481 , H03M1/365
摘要： According to an embodiment, an analog-to-digital converter includes a voltage generating unit to generate comparative voltages; and comparators. Each comparator compares any one of the comparative voltages with an analog input voltage and output a digital signal. Each comparator includes a differential pair circuit to detect a potential difference between two inputs. The differential pair circuit includes first and second circuit portions. The first circuit portion includes a first transistor having a gate to which one input is supplied; and a resistor connected in series with the first transistor. The second circuit portion includes a second transistor having a gate to which the other input is supplied and forms a differential pair with the first transistor; and a variable resistor connected in series with the second transistor. The variable resistor includes variable resistive elements each having a resistance value variably set according to a control signal.
摘要翻译： 根据实施例，模数转换器包括产生比较电压的电压产生单元; 和比较者。 每个比较器将比较电压中的任何一个与模拟输入电压进行比较，并输出数字信号。 每个比较器包括用于检测两个输入之间的电位差的差分对电路。 差分对电路包括第一和第二电路部分。 第一电路部分包括具有一个输入端的栅极的第一晶体管; 以及与第一晶体管串联连接的电阻器。 第二电路部分包括第二晶体管，其具有提供另一输入的栅极，并与第一晶体管形成差分对; 以及与第二晶体管串联连接的可变电阻器。 可变电阻器包括可变电阻元件，每个电阻元件具有根据控制信号可变地设置的电阻值。
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43.发明授权Analog-to-digital converter for dividing reference voltage using plural variable resistors 失效用于使用多个可变电阻器分压参考电压的模数转换器公开(公告)号：US08681034B2
公开(公告)日：2014-03-25
申请号：US13536085
申请日：2012-06-28
申请人： Takao Marukame , Tetsufumi Tanamoto , Atsuhiro Kinoshita , Tomoaki Inokuchi , Masamichi Suzuki , Yoshiaki Saito
发明人： Takao Marukame , Tetsufumi Tanamoto , Atsuhiro Kinoshita , Tomoaki Inokuchi , Masamichi Suzuki , Yoshiaki Saito
IPC分类号： H03M1/34
CPC分类号： H03M1/1061 , H01L27/22 , H01L43/08 , H03M1/365
摘要： According to an embodiment, an analog-to-digital converter includes a voltage generating unit, and a plurality of comparators. The voltage generating unit is configured to divide a reference voltage by a plurality of variable resistors to generate a plurality of comparative voltages. Each of the plurality of comparator is configured to compare any one of the plurality of comparative voltages with an analog input voltage and output a digital signal based on a result of a comparison between the comparative voltage and the analog input voltage. Each of the plurality of variable resistors includes a plurality of variable resistive elements that are connected in series, and each of the plurality of variable resistive elements has a resistance value that is variably set according to an external signal.
摘要翻译： 根据实施例，模数转换器包括电压产生单元和多个比较器。 电压产生单元被配置为通过多个可变电阻器分压参考电压以产生多个比较电压。 多个比较器中的每一个被配置为将多个比较电压中的任何一个与模拟输入电压进行比较，并且基于比较电压和模拟输入电压之间的比较结果输出数字信号。 多个可变电阻器中的每一个包括串联连接的多个可变电阻元件，并且多个可变电阻元件中的每一个具有根据外部信号可变地设置的电阻值。
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公开(公告)号：US08681033B2
公开(公告)日：2014-03-25
申请号：US13535118
申请日：2012-06-27
申请人： Takao Marukame , Tetsufumi Tanamoto , Atsuhiro Kinoshita , Tomoaki Inokuchi , Masamichi Suzuki , Yoshiaki Saito
发明人： Takao Marukame , Tetsufumi Tanamoto , Atsuhiro Kinoshita , Tomoaki Inokuchi , Masamichi Suzuki , Yoshiaki Saito
IPC分类号： H03M1/34
CPC分类号： H03M1/1061 , H03F3/45183 , H03F2203/45391 , H03F2203/45392 , H03F2203/45674 , H03K5/2481 , H03M1/365
摘要： According to an embodiment, an analog-to-digital converter includes a voltage generating unit to generate comparative voltages; and comparators. Each comparator compares any one of the comparative voltages with an analog input voltage and output a digital signal. Each comparator includes a differential pair circuit to detect a potential difference between two inputs. The differential pair circuit includes first and second circuit portions. The first circuit portion includes a first transistor having a gate to which one input is supplied; and a resistor connected in series with the first transistor. The second circuit portion includes a second transistor having a gate to which the other input is supplied and forms a differential pair with the first transistor; and a variable resistor connected in series with the second transistor. The variable resistor includes variable resistive elements each having a resistance value variably set according to a control signal.
摘要翻译： 根据实施例，模数转换器包括产生比较电压的电压产生单元; 和比较者。 每个比较器将比较电压中的任何一个与模拟输入电压进行比较，并输出数字信号。 每个比较器包括用于检测两个输入之间的电位差的差分对电路。 差分对电路包括第一和第二电路部分。 第一电路部分包括具有一个输入端的栅极的第一晶体管; 以及与第一晶体管串联连接的电阻器。 第二电路部分包括第二晶体管，其具有提供另一输入的栅极，并与第一晶体管形成差分对; 以及与第二晶体管串联连接的可变电阻器。 可变电阻器包括可变电阻元件，每个电阻元件具有根据控制信号可变地设置的电阻值。
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公开(公告)号：US07248497B2
公开(公告)日：2007-07-24
申请号：US11626285
申请日：2007-01-23
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/16 , H01L27/115 , H01L29/66984 , H01L29/7881
摘要： An spin-injection FET includes a first ferromagnetic body whose magnetization direction is fixed, a second ferromagnetic body whose magnetization direction is changed by spin-injection current, a gate electrode which is formed on a channel between the first and second ferromagnetic bodies, a first driver/sinker which controls a direction of the spin-injection current to determine the magnetization direction of the second ferromagnetic body, the spin-injection current being passed through the channel, a wiring through which assist current is passed, the assist current generating a magnetic field in a magnetization easy axis direction of the second ferromagnetic body, and a second driver/sinker which controls the direction of the assist current passed through the conductive line.
摘要翻译： 自旋注入FET包括其磁化方向固定的第一铁磁体，其磁化方向由自旋注入电流改变的第二铁磁体，形成在第一和第二铁磁体之间的通道上的栅极，第一铁磁体， 驱动器/沉降器，其控制自旋喷射电流的方向以确定第二铁磁体的磁化方向，自旋喷射电流通过通道，辅助电流通过的布线，辅助电流产生磁 第二铁磁体的磁化容易轴方向的第二驱动器/沉降片，以及控制通过导线的辅助电流的方向的第二驱动器/沉降片。
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公开(公告)号：US07200037B2
公开(公告)日：2007-04-03
申请号：US11255101
申请日：2005-10-21
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/16 , H01L27/115 , H01L29/66984 , H01L29/7881
摘要： An spin-injection FET includes a first ferromagnetic body whose magnetization direction is fixed, a second ferromagnetic body whose magnetization direction is changed by spin-injection current, a gate electrode which is formed on a channel between the first and second ferromagnetic bodies, a first driver/sinker which controls a direction of the spin-injection current to determine the magnetization direction of the second ferromagnetic body, the spin-injection current being passed through the channel, a wiring through which assist current is passed, the assist current generating a magnetic field in a magnetization easy axis direction of the second ferromagnetic body, and a second driver/sinker which controls the direction of the assist current passed through the conductive line.
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公开(公告)号：US20070007609A1
公开(公告)日：2007-01-11
申请号：US11368383
申请日：2006-03-07
CPC分类号： G11C11/15 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3272 , H01L43/08
摘要： It is made possible to provide a highly reliable magnetoresistive effect element and a magnetic memory that operate with low power consumption and current writing and without element destruction. The magnetoresistive effect element includes a first magnetization pinned layer comprising at least one magnetic layer and in which a magnetization direction is pinned, a magnetization free layer in which a magnetization direction is changeable, a tunnel barrier layer provided between the first magnetization pinned layer and the magnetization free layer, a non-magnetic metal layer provided on a first region in an opposite surface of the magnetization free layer from the tunnel barrier layer, a dielectric layer provided on a second region other than the first region in the opposite surface of the magnetization free layer from the tunnel barrier layer; and a second magnetization pinned layer provided to cover opposite surfaces of the non-magnetic metal layer and the dielectric layer from the magnetization free layer.
摘要翻译： 可以提供高可靠性的磁阻效应元件和磁存储器，其以低功耗和电流写入操作，并且不会损坏元件。 磁阻效应元件包括包含至少一个磁性层并且其中磁化方向被钉扎的第一磁化固定层，其中磁化方向可变的磁化自由层，设置在第一磁化固定层和第二磁化层之间的隧道势垒层 磁化自由层，非磁性金属层，设置在磁化自由层的与隧道势垒层相反的表面的第一区域上，介电层设置在第二区域之外，该第二区域与磁化相反的表面中的第一区域 自由层从隧道势垒层; 以及第二磁化固定层，其设置成覆盖非磁性金属层和电介质层与磁化自由层的相对表面。
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公开(公告)号：US08779496B2
公开(公告)日：2014-07-15
申请号：US12029117
申请日：2008-02-11
IPC分类号： H01L29/76
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11C11/16 , H01L27/228 , H01L29/66984 , H01L29/7881 , H01L43/08
摘要： A spin FET includes a first ferromagnetic film disposed on a first source/drain area, a direction of magnetization thereof being fixed in an upward direction or a downward direction perpendicular to a film surface, a second ferromagnetic film disposed on a second source/drain area, a direction of magnetization thereof being changed in the upward direction or the downward direction, an anti-ferromagnetic ferroelectric film disposed on the second ferromagnetic film, and a tunnel barrier film disposed at least between the first source/drain area and the first ferromagnetic film or between the second source/drain and the second ferromagnetic film. Resistance of the anti-ferromagnetic ferroelectric film is larger than ON resistance when the first and second source/drain areas conduct electricity through the channel area.
摘要翻译： 自旋FET包括设置在第一源/漏区上的第一铁磁膜，其磁化方向沿垂直于膜表面的向上方向或向下方向固定，第二铁磁膜设置在第二源/漏区 其磁化方向在向上方向或向下方向上变化，设置在第二铁磁性膜上的反铁磁性铁电体膜和至少设置在第一源极/漏极区域与第一铁磁性膜之间的隧道势垒膜 或者在第二源极/漏极和第二铁磁膜之间。 当第一和第二源极/漏极区域通过沟道区域导电时，反铁磁铁电体膜的电阻大于导通电阻。
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公开(公告)号：US07750390B2
公开(公告)日：2010-07-06
申请号：US11610100
申请日：2006-12-13
CPC分类号： H01L29/66984 , G11C11/16 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A spin FET according to an example of the present invention includes a magnetic pinned layer whose magnetization direction is fixed, a magnetic free layer whose magnetization direction is changed, a channel between the magnetic pinned layer and the magnetic free layer, a gate electrode provided on the channel via a gate insulation layer, and a multiferroric layer which is provided on the magnetic free layer, and whose magnetization direction is changed by an electric field.
摘要翻译： 根据本发明的示例的自旋FET包括其磁化方向固定的磁性钉扎层，其磁化方向改变的磁性自由层，磁性被钉扎层和磁性自由层之间的通道，设置在 通过栅极绝缘层的沟道，以及设置在磁性自由层上的磁化方向由电场改变的多层。
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公开(公告)号：US07394684B2
公开(公告)日：2008-07-01
申请号：US11373303
申请日：2006-03-13
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A spin-injection magnetic random access memory of an aspect of the present invention includes a magnetoresistive element, a unit which writes data into the magnetoresistive element by use of spin-polarized electrons generated by a spin-injection current and which applies, to the magnetoresistive element, a magnetic field of a direction of a hard magnetization of the magnetoresistive element during the writing.
摘要翻译： 本发明的一个自旋注入磁随机存取存储器包括一个磁阻元件，一个通过使用由自旋注入电流产生的自旋极化电子将数据写入磁阻元件的单元，该单元适用于磁阻 元件，写入期间磁阻元件的硬磁化方向的磁场。
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