公开(公告)号：US07656621B2

公开(公告)日：2010-02-02

申请号：US11581478

申请日：2006-10-17

申请人： Koji Shimazawa ,  Daisuke Miyauchi ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya

发明人： Koji Shimazawa ,  Daisuke Miyauchi ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B2005/3996

摘要： A magneto-resistive element has: a first stacked film assembly having a pinned layer, a spacer layer, and a free layer; a first electrode layer which is arranged such that the first layer is in contact with the first electrode layer on the other side of the first layer, the first electrode layer being made of a ferromagnetic material; and a second electrode layer which is arranged on a side that is opposite to the first electrode layer with regard to the first stacked film assembly. The first and second electrode layers are adapted to apply a sense current to the first stacked film assembly and the first layer in a direction that is perpendicular to layer surfaces. The first layer is made of gold, silver, copper, ruthenium, rhodium, iridium, chromium or platinum, or an alloy thereof.

摘要翻译： 磁阻元件具有：具有钉扎层，间隔层和自由层的第一层叠膜组件; 第一电极层，被布置成使得第一层与第一层的另一侧上的第一电极层接触，第一电极层由铁磁材料制成; 以及相对于第一层叠膜组件布置在与第一电极层相对的一侧的第二电极层。 第一和第二电极层适于在垂直于层表面的方向上向第一堆叠膜组件和第一层施加感测电流。 第一层由金，银，铜，钌，铑，铱，铬或铂或其合金制成。

公开(公告)号：US20080062557A1

公开(公告)日：2008-03-13

申请号：US11698180

申请日：2007-01-26

申请人： Yoshihiro Tsuchiya ,  Kei Hirata ,  Tomohito Mizuno ,  Koji Shimazawa

发明人： Yoshihiro Tsuchiya ,  Kei Hirata ,  Tomohito Mizuno ,  Koji Shimazawa

IPC分类号： G11B5/52 ,  G11B5/127 ,  G11B5/56

CPC分类号： G11B5/59683 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996

摘要： An MR element includes: a free layer having a direction of magnetization that changes in response to a signal magnetic field; a pinned layer having a fixed direction of magnetization; and a spacer layer disposed between these layers. The spacer layer includes a first nonmagnetic metal layer and a second nonmagnetic metal layer each made of a nonmagnetic metal material, and a semiconductor layer that is made of a material containing an oxide semiconductor and that is disposed between the first and second nonmagnetic metal layers. The MR element has a resistance-area product within a range of 0.1 to 0.3Ω·m2, and the spacer layer has a conductivity within a range of 133 to 432 S/cm.

摘要翻译： MR元件包括：具有响应于信号磁场而改变的磁化方向的自由层; 具有固定的磁化方向的钉扎层; 以及设置在这些层之间的间隔层。 间隔层包括由非磁性金属材料制成的第一非磁性金属层和第二非磁性金属层，以及由含有氧化物半导体的材料制成并且设置在第一和第二非磁性金属层之间的半导体层。 MR元件的电阻面积为0.1〜0.3Omeg·m 2的范围，间隔层的导电率为133〜432S / cm。

公开(公告)号：US07961438B2

公开(公告)日：2011-06-14

申请号：US12128352

申请日：2008-05-28

申请人： Tomohito Mizuno ,  Koji Shimazawa ,  Yoshihiro Tsuchiya

发明人： Tomohito Mizuno ,  Koji Shimazawa ,  Yoshihiro Tsuchiya

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3912 ,  G11B2005/3996

摘要： The invention provides a magnetoresistive device of the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first shield layer and a second shield layer which are located and formed such that the magnetoresistive unit is sandwiched between them with a sense current applied in a stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that the nonmagnetic intermediate layer is sandwiched between them. The first shield layer and the second shield layer are each controlled by magnetization direction control means in terms of magnetization direction to create an antiparallel magnetization state where their magnetizations are in opposite directions. The first ferromagnetic layer and the second ferromagnetic layer are exchange coupled to the first shield layer and the second shield layer, respectively, by way of a first exchange coupling function gap layer and a second exchange coupling function gap layer, with an exchange coupled strength of 0.2 to 2.5 erg/cm2.

摘要翻译： 本发明提供了CPP（电流垂直于平面）结构的磁阻器件，包括磁阻单元，以及第一屏蔽层和第二屏蔽层，它们被定位和形成，使得磁阻单元以感测电流夹在它们之间 沿堆叠方向施加。 磁阻单元包括非磁性中间层，并且堆叠并形成第一铁磁层和第二铁磁层，使得非磁性中间层夹在它们之间。 第一屏蔽层和第二屏蔽层各自由磁化方向控制装置在磁化方向上控制，以产生它们的磁化处于相反方向的反平行磁化状态。 第一铁磁层和第二铁磁层分别通过第一交换耦合功能间隙层和第二交换耦合功能间隙层交​​换耦合到第一屏蔽层和第二屏蔽层，交换耦合强度 0.2至2.5erg / cm2。

公开(公告)号：US07895731B2

公开(公告)日：2011-03-01

申请号：US11766926

申请日：2007-06-22

申请人： Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Koji Shimazawa ,  Kei Hirata ,  Keita Kawamori

发明人： Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Koji Shimazawa ,  Kei Hirata ,  Keita Kawamori

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  H01F10/1936 ,  H01F10/3272 ,  H01F41/304 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T29/49025 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048

摘要： A method for manufacturing a magnetic field detecting element having a free layer whose magnetization direction is variable depending on an external magnetic field and a pinned layer whose magnetization direction is fixed and these are stacked with an electrically conductive, nonmagnetic spacer layer sandwiched therebetween, wherein sense current flows in a direction perpendicular to film planes of the magnetic field detecting element. The method comprises: forming a spacer adjoining layer adjacent to the spacer layer, Heusler alloy layer, and a metal layer successively in this order; and forming either at least a part of the pinned layer or the free layer by heating the spacer adjoining layer, the Heusler alloy layer, and the metal layer. The spacer adjoining layer has a layer chiefly made of cobalt and iron. The Heusler alloy layer includes metal which is silver, gold, copper, palladium, or platinum, or an alloy thereof. The metal layer is made of the same.

摘要翻译： 一种磁场检测元件的制造方法，该磁场检测元件具有磁化方向根据外部磁场而变化的自由层，其磁化方向固定的被钉扎层与夹在其间的导电非磁性间隔层堆叠， 电流在垂直于磁场检测元件的膜平面的方向上流动。 该方法包括：依次形成与间隔层相邻的间隔物邻接层，Heusler合金层和金属层; 以及通过加热间隔物邻接层，Heusler合金层和金属层来形成被钉扎层或自由层的至少一部分。 间隔物邻接层具有主要由钴和铁制成的层。 Heusler合金层包括银，金，铜，钯或铂的金属或其合金。 金属层由其制成。

公开(公告)号：US07894165B2

公开(公告)日：2011-02-22

申请号：US11762457

申请日：2007-06-13

申请人： Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Koji Shimazawa

发明人： Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Koji Shimazawa

IPC分类号： G11B5/39

CPC分类号： G11B5/3967 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/1936 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/10

摘要： The invention provides a magneto-resistive effect device having a CPP (current perpendicular to plane) structure comprising a nonmagnetic spacer layer, and a fixed magnetized layer and a free layer stacked one upon another with said nonmagnetic spacer layer sandwiched between them, with a sense current applied in a stacking direction, wherein said free layer functions such that its magnetization direction changes depending on an external magnetic field, and is made up of a multilayer structure including a Heusler alloy layer, wherein an Fe layer is formed on one of both planes of said Heusler alloy layer in the stacking direction, wherein said one plane is near to at least a nonmagnetic spacer layer side, and said fixed magnetization layer is made up of a multilayer structure including a Heusler alloy layer, wherein Fe layers are formed on both plane sides of said Heusler alloy layer in the stacking direction with said Heusler alloy layer sandwiched between them. It is thus possible to prevent diffusion of Co atoms contained in the CoFe layer into the Heusler alloy layer, enabling the decrease in the spin polarizability of the Heusler alloy layer to be hold back and achieving a high MR ratio.

摘要翻译： 本发明提供一种具有包含非磁性间隔层的CPP（电流垂直于平面）结构的磁阻效应器件，以及夹在它们之间的所述非磁性间隔层彼此堆叠的固定磁化层和自由层，具有感觉 电流施加在层叠方向上，其中所述自由层的功能使得其磁化方向根据外部磁场而变化，并且由包括Heusler合金层的多层结构构成，其中在两个平面之一上形成Fe层 的所述Heusler合金层，其中所述一个平面接近至少一个非磁性间隔层侧，并且所述固定磁化层由包括Heusler合金层的多层结构构成，其中在两者上形成Fe层 所述Heusler合金层在层叠方向上的平面侧与所述Heusler合金层夹在它们之间。 因此，可以防止CoFe层中所含的Co原子扩散到Heusler合金层中，能够抑制Heusler合金层的自旋极化率的降低并获得高的MR比。

公开(公告)号：US20090296283A1

公开(公告)日：2009-12-03

申请号：US12128352

申请日：2008-05-28

申请人： Tomohito Mizuno ,  Koji Shimazawa ,  Yoshihiro Tsuchiya

发明人： Tomohito Mizuno ,  Koji Shimazawa ,  Yoshihiro Tsuchiya

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3912 ,  G11B2005/3996

摘要： The invention provides a magnetoresistive device of the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first shield layer and a second shield layer which are located and formed such that the magnetoresistive unit is sandwiched between them with a sense current applied in a stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that the nonmagnetic intermediate layer is sandwiched between them. The first shield layer and the second shield layer are each controlled by magnetization direction control means in terms of magnetization direction to create an antiparallel magnetization state where their magnetizations are in opposite directions. The first ferromagnetic layer and the second ferromagnetic layer are exchange coupled to the first shield layer and the second shield layer, respectively, by way of a first exchange coupling function gap layer and a second exchange coupling function gap layer, with an exchange coupled strength of 0.2 to 2.5 erg/cm2.

摘要翻译： 本发明提供了CPP（电流垂直于平面）结构的磁阻器件，包括磁阻单元，以及第一屏蔽层和第二屏蔽层，它们被定位和形成，使得磁阻单元以感测电流夹在它们之间 沿堆叠方向施加。 磁阻单元包括非磁性中间层，并且堆叠并形成第一铁磁层和第二铁磁层，使得非磁性中间层夹在它们之间。 第一屏蔽层和第二屏蔽层各自由磁化方向控制装置在磁化方向上控制，以产生它们的磁化处于相反方向的反平行磁化状态。 第一铁磁层和第二铁磁层分别通过第一交换耦合功能间隙层和第二交换耦合功能间隙层交​​换耦合到第一屏蔽层和第二屏蔽层，交换耦合强度 0.2至2.5erg / cm2。

公开(公告)号：US07533456B2

公开(公告)日：2009-05-19

申请号：US11757174

申请日：2007-06-01

申请人： Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Koji Shimazawa

发明人： Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Koji Shimazawa

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： H01F41/183 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3906 ,  H01F10/1936 ,  H01F10/3268 ,  H01L43/12 ,  Y10T29/49021 ,  Y10T29/49034 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A free layer functions such that a magnetization direction changes depending on an external magnetic field, and is made up of a multilayer structure including a first Heusler alloy layer, and a fixed magnetization layer takes a form wherein an inner pin layer and an outer pin layer are stacked one upon another with a nonmagnetic intermediated layer sandwiched between them. The inner pin layer is made up of a multilayer structure including a second Heusler alloy layer. The first and second Heusler alloy layers are each formed by a co-sputtering technique using a split target split into at least two sub-targets in such a way as to constitute a Heusler alloy layer composition. When the Heusler alloy layer is formed, therefore, it is possible to bring up a film-deposition rate, improve productivity, and improve the performance of the device.

摘要翻译： 自由层的功能使得磁化方向根据外部磁场而变化，并且由包括第一Heusler合金层的多层结构构成，并且固定磁化层采用其中内部销层和外部销层 彼此叠置，夹在它们之间的非磁性中间层。 内销层由包括第二Heusler合金层的多层结构构成。 第一和第二Heusler合金层各自通过共溅射技术形成，其使用分裂的目标分成至少两个子靶，以构成Heusler合金层组成。 因此，当形成Heusler合金层时，可以提高膜沉积速率，提高生产率并提高器件的性能。

公开(公告)号：US20070274010A1

公开(公告)日：2007-11-29

申请号：US11725476

申请日：2007-03-20

申请人： Kei Hirata ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Koji Shimazawa

发明人： Kei Hirata ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Koji Shimazawa

IPC分类号： G11B5/33

CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G11B5/3929 ,  G11B2005/3996

摘要： An MR element incorporates a nonmagnetic conductive layer, and a pinned layer and a free layer that are disposed to sandwich the nonmagnetic conductive layer. Each of the pinned layer and the free layer includes a Heusler alloy layer. The Heusler alloy layer contains a Heusler alloy in which atoms of a magnetic metallic element are placed at body-centered positions of unit cells, and an additive element that is a nonmagnetic metallic element that does not constitute the Heusler alloy. At least one of the pinned layer and the free layer includes a region in which the concentration of the additive element increases as the distance from the nonmagnetic conductive layer decreases, the region being adjacent to the nonmagnetic conductive layer.

摘要翻译： MR元件包括非磁性导电层，以及设置成夹持非磁性导电层的被钉扎层和自由层。 每个被钉扎层和自由层包括Heusler合金层。 Heusler合金层包含Heusler合金，其中磁性金属元素的原子被放置在单元电池的体中心位置，而添加元素是不构成Heusler合金的非磁性金属元素。 被钉扎层和自由层中的至少一个包括随着距离非磁性导电层的距离减小的添加元素的浓度增加的区域，该区域与非磁性导电层相邻。

公开(公告)号：US20070183098A1

公开(公告)日：2007-08-09

申请号：US11671248

申请日：2007-02-05

申请人： Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Daisuke Miyauchi ,  Koji Shimazawa

发明人： Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Daisuke Miyauchi ,  Koji Shimazawa

IPC分类号： G11B5/127

CPC分类号： G11B5/3906 ,  B82Y25/00 ,  G01R33/093 ,  H01F10/1936 ,  H01F10/3259 ,  H01F10/3272 ,  H01L43/10 ,  Y10T428/1121

摘要： An MR element has a pinned layer, a spacer layer, and a free layer successively stacked in the order named. The free layer includes a Heusler alloy layer in at least a region thereof adjacent to the spacer layer. An oxide is distributed as sea-islands in the interface between the Heusler alloy layer and the spacer layer. The Heusler alloy layer virtually has a stoichiometric composition. The oxide has an RA in the range from 0.10 Ωμm2 to 0.36 Ωμm2.

摘要翻译： MR元件具有钉扎层，间隔层和自由层，依次按顺序堆叠。 自由层在与间隔层相邻的至少一个区域中包括Heusler合金层。 在Heusler合金层和间隔层之间的界面中，氧化物作为海岛分布。 Heusler合金层实际上具有化学计量组成。 氧化物的RA范围为0.10欧姆2至0.36欧姆2。

公开(公告)号：US07885042B2

公开(公告)日：2011-02-08

申请号：US11870097

申请日：2007-10-10

申请人： Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Kei Hirata

发明人： Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Kei Hirata

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B2005/3996 ,  H01F10/3272 ,  H01F41/305 ,  Y10T29/49044 ,  Y10T29/49048

摘要： A giant magneto-resistive effect device having a CPP structure comprising a spacer layer, and a fixed magnetization layer and a free layer stacked one upon another with the spacer layer interposed between them, with a sense current applied in a stacking direction. The spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each made of a nonmagnetic metal material, and a semiconductor layer formed between the first and the second nonmagnetic metal layer. The semiconductor layer is an n-type oxide semiconductor. When the first and second nonmagnetic metal layers are formed in order, the first nonmagnetic metal layer is formed prior to the second nonmagnetic metal layer, and an anti-oxidizing layer is formed between the first nonmagnetic metal layer and the semiconductor layer. The anti-oxidizing layer is formed of a material incapable of producing a Schottky barrier upon joining to the semiconductor layer.

摘要翻译： 具有包括间隔层的CPP结构的巨磁阻效应器件，以及间隔层插入在它们之间的固定磁化层和自由层，并以层叠方向施加感测电流。 间隔层包括由非磁性金属材料制成的第一非磁性金属层和第二非磁性金属层，以及形成在第一和第二非磁性金属层之间的半导体层。 半导体层是n型氧化物半导体。 当依次形成第一和第二非磁性金属层时，在第二非磁性金属层之前形成第一非磁性金属层，并且在第一非磁性金属层和半导体层之间形成抗氧化层。 抗氧化层由与半导体层接合时不能产生肖特基势垒的材料形成。