公开(公告)号：US08841193B2

公开(公告)日：2014-09-23

申请号：US13928366

申请日：2013-06-26

Applicant: United Microelectronics Corp.

Inventor： Ted Ming-Lang Guo ,  Chin-Cheng Chien ,  Shu-Yen Chan ,  Ling-Chun Chou ,  Tsung-Hung Chang ,  Chun-Yuan Wu

IPC: H01L21/336 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/66477 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/7843 ,  H01L29/7847

Abstract: A semiconductor structure including a substrate and a gate structure disposed on the substrate is disclosed. The gate structure includes a gate dielectric layer disposed on the substrate, a gate material layer disposed on the gate dielectric layer and an outer spacer with a rectangular cross section. The top surface of the outer spacer is lower than the top surface of the gate material layer.

Abstract translation: 公开了一种包括衬底和设置在衬底上的栅极结构的半导体结构。 栅极结构包括设置在基板上的栅极介质层，设置在栅极介电层上的栅极材料层和具有矩形横截面的外部间隔物。 外隔离物的顶表面比栅极材料层的顶表面低。