公开(公告)号：US10153287B1

公开(公告)日：2018-12-11

申请号：US15795247

申请日：2017-10-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shu-Ru Wang ,  Ching-Cheng Lung ,  Yu-Tse Kuo ,  Chien-Hung Chen ,  Chun-Hsien Huang ,  Li-Ping Huang ,  Chun-Yen Tseng ,  Meng-Ping Chuang

IPC: H01L27/11 ,  H01L27/02 ,  H01L29/78 ,  H01L23/528 ,  H01L21/3213 ,  H01L23/522 ,  H01L21/8238 ,  H01L27/092

Abstract: A layout pattern of a static random access memory (SRAM) includes a substrate, a first pull-up transistor (PL1), a first pull-down transistor (PD1), a second (PL2), and a second pull-down transistor (PD2) on the substrate, and a first pass gate transistor (PG1A), a second pass gate transistor (PG1B), a third pass gate transistor (PG2A) and a fourth pass gate transistor (PG2B), wherein the PG1A and the PG1B comprise an identical first fin structure, the PG2A and the PG2B comprise an identical second fin structure, a first local interconnection layer disposed between the PG1A and the PG1B and disposed on the fin structures of the PL1 and the PD1, a second local interconnection layer disposed between the PG2A and the PG2B and disposed between the fin structures of the PL2 and the PD2.

公开(公告)号：US09947673B1

公开(公告)日：2018-04-17

申请号：US15479253

申请日：2017-04-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ting-Chia Chang ,  Shih-Hao Liang ,  Chun-Yen Tseng ,  Yu-Tse Kuo ,  Ching-Cheng Lung ,  Hung-Chan Lin ,  Shao-Hui Wu

IPC: H01L27/02 ,  H01L27/11 ,  G11C11/412 ,  H01L29/24

CPC classification number: H01L27/1104 ,  G11C11/412 ,  G11C14/0054 ,  H01L27/0207 ,  H01L27/1116 ,  H01L29/24

Abstract: The present invention provides a semiconductor memory device, includes at least one static random access memory (SRAM) cell, wherein the SRAM cell includes a first pick-up node, and a dielectric oxide SRAM (DOSRAM), disposed in a first dielectric layer and disposed above the SRAM cell when viewed in a cross section view, wherein the DOSRAM includes an oxide semiconductor filed effect transistor (OSFET) and a capacitor, a source of the OSFET is electrically connected to the first pick-up node of the SRAM cell through a via structure, and at least parts of the first dielectric layer are disposed between the source of the OSFET and the via structure, and the capacitor is disposed above the OSFET and electrically connected to a drain of the OSFET when viewed in the cross section view.

公开(公告)号：US09871048B1

公开(公告)日：2018-01-16

申请号：US15621754

申请日：2017-06-13

Applicant: United Microelectronics Corp.

Inventor： Chun-Hsien Huang ,  Ching-Cheng Lung ,  Yu-Tse Kuo ,  Li-Ping Huang ,  Chun-Yen Tseng

IPC: H01L27/02 ,  H01L27/11 ,  G11C11/412

CPC classification number: H01L27/1104 ,  G11C11/412 ,  H01L27/0207

Abstract: A memory device includes a pickup area extending along a first direction. The pickup area includes at least one N-pickup structure, distributing along an N-pickup line extending at the first direction. At least one P-pickup structure distributes by alternating with the N-pickup structure at the first direction and interleaves with the N-pickup structure at a second direction. The second direction is perpendicular to the first direction. Dummy pickup structure distributes along the first direction, opposite to the P-pickup structure with respect to the N-pickup line. Further, a cell area is beside the pickup area. The SRAM cells in the cell area form cell rows extending along the second direction. Each SRAM cell covers one N-type well region along the second direction and two P-type well regions along the second direction to sandwich the N-type well region. The N-pickup/P-pickup structures respectively provide first/second substrate voltage to the N-type/P-type well regions.